SSM6L14FE(TE85L,F) [TOSHIBA]

TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,800MA I(D),TSOP;


型号：	SSM6L14FE(TE85L,F)
厂家：	TOSHIBA
描述：	TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,800MA I(D),TSOP
文件：	总9页 (文件大小：233K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSM6L14FE

TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type

SSM6L14FE

○Power Management Switch Applications

○High-Speed Switching Applications

Unit: mm

1.6±0.05

•

N-ch: 1.5-V drive

P-ch: 1.5-V drive

1.2±0.05

•

N-ch, P-ch, 2-in-1

Low ON-resistance Q1 N-ch:R

= 330 mΩ (max) (@V

= 2.5 V)

DS(ON)

= 240 mΩ (max) (@V = 4.5 V)

= 440 mΩ (max) (@V = -2.5 V)

DS(ON)

Q2 P-ch:R

= 300 mΩ (max) (@V = -4.5 V)

DS(ON)

Q1 Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

±10

0.8

1.6

DSS

Gate-source voltage

GSS

1.Source1

2.Gate1

4.Source2

5.Gate2

Drain current

Pulse

3.Drain2

6.Drain1

Q2 Absolute Maximum Ratings (Ta = 25°C)

ES6

JEDEC

JEITA

―

Characteristics

Drain-source voltage

Symbol

Rating

Unit

―

−20

±8

DSS

TOSHIBA

2-2N1D

Gate-source voltage

GSS

−0.72

−1.44

Weight: 3.0 mg (typ.)

Drain current

Pulse

Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common)

Characteristics

Power dissipation

Symbol

P (Note 1)

Rating

Unit

150

°C

Channel temperature

Storage temperature range

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

Note1: Mounted on an FR4 board. (total dissipation)

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm²× 6 )

Marking

Equivalent Circuit (top view)

LL5

2010-03-25

SSM6L14FE

Q1 Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Conditions

Min

Typ.

Max

Unit

= 1 mA, V

= 0 V

⎯

(BR) DSS

(BR) DSX

Drain-source breakdown voltage

= - 10 V

Drain cutoff current

= 20 V, V = 0 V

⎯

μA

DSS

GSS

Gate leakage current

Gate threshold voltage

Forward transfer admittance

= ±8 V, V = 0 V

⎯

±1

1.0

⎯

= 3 V, I = 1 mA

0.35

1.05

⎯

|Y |

= 3 V, I = 500 mA

(Note 2)

= 4.5 V (Note 2)

= 2.5 V (Note 2)

= 1.8 V (Note 2)

= 1.5 V (Note 2)

2.1

185

245

310

370

= 500 mA, V

= 400 mA, V

= 250 mA, V

= 150 mA, V

240

330

450

600

⎯

Drain-source ON-resistance

mΩ

DS (ON)

⎯

Input capacitance

⎯

iss

= 10 V, V

= 0 V, f = 1 MHz

Output capacitance

Reverse transfer capacitance

Total gate charge

⎯

oss

⎯

rss

⎯

2.00

1.02

0.98

⎯

= 10 V, I = 0.8 A

Gate-source charge

Gate-drain charge

⎯

= 4.5 V

⎯

Turn-on time

Switching time

= 10 V, I = 200 mA

⎯

off

= 0 to 2.5 V, R = 4.7 Ω

Turn-off time

⎯

Drain-source forward voltage

= -0.8 A, V = 0 V

(Note 2)

⎯

-0.84

-1.2

DSF

Q2 Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Conditions

Min

Typ.

Max

Unit

= -1 mA, V

= 0 V

= 8 V

-20

-12

⎯

(BR) DSS

(BR) DSX

Drain-source breakdown voltage

Drain cutoff current

= -20 V, V = 0 V

-10

μA

DSS

GSS

Gate leakage current

Gate threshold voltage

Forward transfer admittance

= ±8 V, V = 0 V

⎯

-0.3

850

⎯

±1

-1.0

⎯

= -3 V, I = -1 mA

|Y |

= -3 V, I = -400 mA

(Note2)

⎯

= -400 mA, V

= -4.5 V (Note2)

= -2.5 V (Note2)

= -1.8 V (Note2)

0.25

0.34

0.44

0.55

110

0.30

0.44

0.67

1.04

⎯

= -200 mA, V

= -100 mA, V

⎯

Drain-source ON-resistance

DS (ON)

⎯

= -50 mA, V

= -1.5 V

(Note2)

⎯

Input capacitance

Output capacitance

⎯

iss

= -10 V, V

= 0 V, f = 1 MHz

⎯

oss

Reverse transfer capacitance

Total gate charge

rss

⎯

1.76

1.22

0.54

⎯

= -10 V, I = -720 mA

Gate−source charge

Gate−drain charge

⎯

= -4.5 V

⎯

Turn-on time

Switching time

⎯

off

= -10 V, I = -100 mA

= 0 to -2.5 V, R = 50 Ω

Turn-off time

⎯

Drain-source forward voltage

Note 2: Pulse test

= 720 mA, V = 0 V

(Note2)

0.85

1.2

DSF

2010-03-25

SSM6L14FE

Q1 Switching Time Test Circuit

(a) Test Circuit

(b) V

2.5 V

0 V

90%

OUT

2.5 V

10%

OUT

10 μs

= 10 V

90%

10%

DS (ON)

= 4.7 Ω

Duty ≤ 1%

: t , t < 5 ns

off

r f

Common Source

Ta = 25°C

Q2 Switching Time Test Circuit

(a) Test Circuit

(b) V

0 V

90%

OUT

10%

−2.5 V

−2.5V

DS (ON)

90%

10%

OUT

10 μs

=− 10 V

= 50 Ω

Duty ≤ 1%

: t , t < 5 ns

Common Source

r f

off

Ta = 25°C

Q1 Usage Considerations

Let V be the voltage applied between gate and source that causes the drain current (I ) to below (1 mA for the Q1 of

the SSM6L14FE). Then, for normal switching operation, V

must be higher than V and V

must be lower

GS(off)

GS(on)

th,

than V This relationship can be expressed as: V

< V < V

th GS(on).

th.

GS(off)

Take this into consideration when using the device.

Q2 Usage Considerations

Let V be the voltage applied between gate and source that causes the drain current (I ) to below (−1 mA for the Q2

of the SSM6L14FE). Then, for normal switching operation, V

must be higher than V and V

th,

must be lower

GS(off)

GS(on)

than V This relationship can be expressed as: V

< V < V

th GS(on).

th.

GS(off)

Take this into consideration when using the device.

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is

protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that

come into direct contact with devices should be made of antistatic materials.

Thermal resistance R

and power dissipation P vary depending on board material, board area, board thickness

th (ch-a)

and pad area. When using this device, please take heat dissipation into consideration

2010-03-25

SSM6L14FE

Q1 (N-ch MOSFET)

– V

I – V

D GS

10000

1000

100

2000

Common Source

Ta = 25°C

Common Source

= 3 V

Pulse Test

10 V 4 V 2.5 V 1.8 V

1.5 V

1000

Ta = 100°C

−25°C

= 1.2 V

25°C

0.1

0.2

0.4

0.6

0.8

1.0

Drain–source voltage

(V)

Gate–source voltage

(V)

– V

DS (ON)

1000

500

1000

500

Common Source

= 0.15 A

Common Source

= 0.5 A

Pulse Test

25°C

Ta = 100°C

−25°C

Gate–source voltage

(V)

Gate–source voltage

(V)

– I

– Ta

DS (ON)

1000

500

1000

500

Common Source

Ta = 25°C

Common Source

Pulse Test

1.8 V, 0.25 A

= 1.5 V

= 1.5 V, I = 0.15 A

1.8 V

2.5 V

4.5 V

4.5 V, 0.5 A

2.5 V, 0.4 A

1000

2000

−50

100

150

Drain current

(mA)

Ambient temperature Ta (°C)

2010-03-25

SSM6L14FE

Q1 (N-ch MOSFET)

⎪Y ⎪ – I

– Ta

1.0

Common Source

= 1 mA

= 3 V

0.5

0.3

0.5

0.1

0.05

0.03

Common Source

= 3 V

Ta = 25°C

Pulse Test

0.01

−50

100

1000

10000

100

150

Drain current

(mA)

Ambient temperature Ta (°C)

Capacitance – V

– V

1000

500

10000

1000

100

Common Source

= 0 V

Pulse Test

I_DR

100

iss

25°C

Ta = 100°C

oss

−25°C

rss

Common Source

= 0 V

f = 1 MHz

Ta = 25°C

−0.5

−1

−1.5

0.1

0.5

50 100

Drain–source voltage

(V)

Drain–source voltage

(V)

Dynamic Input Characteristic

t – I

10000

5000

Common Source

= 0.8 A

Ta = 25°C

Common Source

= 10 V

= 0 to 2.5 V

Ta = 25°C

1000

500

off

100

= 10 V

= 16 V

100

1000

10000

Drain current

(mA)

Total Gate Charge Qg (nC)

2010-03-25

SSM6L14FE

Q2 (P-ch MOSFET)

– V

I – V

D GS

-1.6

-10

-1

Common Source

Ta = 25 °C

-2.5 V

-4.5 V

Common Source

= -3 V

-8 V

-1.4

-1.2

Pulse Test

-1.8 V

-1

-0.8

-0.6

-0.4

-0.2

-0.1

-1.5 V

Ta = 100 °C

25 °C

-0.01

-0.001

− 25 °C

=-1.2 V

-0.0001

-0.2

-0.4

-0.6

-0.8

(V)

-1.0

-2.0

Drain-source voltage

Gate-source voltage

(V)

– V

– I

DS (ON)

1.4

1.2

1.0

= -100 mA

Common Source

Ta = 25°C

Common Source

Pulse Test

1.2

1.0

0.8

0.6

0.4

Pulse Test

0.8

0.6

-1.5 V

-1.8 V

-2.5 V

25 °C

0.4

0.2

Ta = 100 °C

− 25 °C

VGS = -4.5 V

0.2

-500

-1000

(mA)

-1500

-2

-4

-6

-8

Gate-source voltage

(V)

Drain current I

– Ta

DS (ON)

-1.0

-0.5

Common Source

Pulse Test

Common Source

= -3 V

= -1 mA

-50 mA / -1.5 V

0.8

0.6

0.4

-100 mA / -1.8 V

-200 mA / -2.5 V

= -400 mA / V

= -4.5 V

0.2

−50

100

150

−50

100

150

Ambient temperature Ta (°C)

2010-03-25

SSM6L14FE

Q2 (P-ch MOSFET)

|Y | – I

– V

10000

Common Source

= 0 V

Pulse Test

Common Source

= -3 V

Ta = 25°C

1000

100

Pulse Test

1000

100

Ta =100 °C

25 °C

−25 °C

0.1

-1

-10

-100

-1000

-10000

-100

0.2

0.4

0.6

0.8

1.0

1.2

Drain current

(mA)

Drain-source voltage

(V)

t – I

Capacitance – V

10000

1000

Common Source

= -10 V

500

300

= 0 to -2.5 V

Ta = 25 °C

= 50Ω

off

iss

100

Common Source

Ta = 25°C

oss

f = 1 MHz

rss

= 0 V

-0.1

-1

-10

-100

-1000

(mA)

-10000

-1

Drain-Source voltage

(V)

Drain current

Dynamic Input Characteristic

-8

-6

-4

-2

Common Source

= -0.72 A

Ta = 25°C

= - 10 V

= - 16 V

Total Gate Charge Qg (nC)

2010-03-25

SSM6L14FE

Q1, Q2 Common

P * – T

250

Mounted on FR4 board.

(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.135 mm²× 6)

200

150

100

150

-40 -20

60 80 100 120 140 160

*:Total Rating

Ambient temperature Ta (°C)

2010-03-25

SSM6L14FE

RESTRICTIONS ON PRODUCT USE

•

Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the

Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of

all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such

design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,

diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating

parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR

APPLICATIONS.

•

Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring

equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.

Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or

reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious

public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used

in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling

equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric

power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this

document.

•

Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.

Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any

applicable laws or regulations.

•

The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any

infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to

any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.

ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE

FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY

WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR

LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND

LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO

SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS

FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

•

Do not use or otherwise make available Product or related software or technology for any military purposes, including without

limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile

technology products (mass destruction weapons). Product and related software and technology may be controlled under the

Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product

or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of

noncompliance with applicable laws and regulations.

2010-03-25

SSM6L14FE(TE85L,F) [TOSHIBA]

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