SSM6N04FU [TOSHIBA]
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type; 东芝场效应晶体管硅N沟道MOS型
| 型号： | SSM6N04FU |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 文件： | 总5页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6N04FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N04FU
High Speed Switch Applications
Unit: mm
·
·
·
·
With built-in gate-source resistor: R
2.5 V gate drive
Low gate threshold voltage: V = 0.7~1.3 V
th
= 1 MΩ (typ.)
GS
Small package
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
20
10
V
V
DS
Gate-source voltage
DC drain current
V
GSS
I
100
mA
D
P
D
Drain power dissipation
200
mW
(Note)
Channel temperature
T
150
°C
°C
ch
Storage temperature range
T
-55~150
stg
JEDEC
JEITA
―
―
Note: Total rating
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
Marking
Pin Assignment (top view)
(Q1, Q2 common)
Equivalent Circuit
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SSM6N04FU
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Gate leakage current
Symbol
Test Condition
= 10 V, V = 0
Min
Typ.
Max
Unit
I
V
¾
20
¾
0.7
25
¾
¾
¾
¾
¾
¾
0.7
¾
¾
15
¾
1
mA
V
GSS
GS
DS
Drain-source breakdown voltage
Drain cut-off current
V
I
= 100 mA, V
= 0
= 0
(BR) DSS
D
GS
GS
I
V
V
V
= 20 V, V
¾
mA
V
DSS
DS
DS
DS
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
V
= 3 V, I = 0.1 mA
¾
1.3
¾
12
¾
¾
¾
¾
¾
1.3
th
D
ïY ï
fs
= 3 V, I = 10 mA
50
mS
W
D
R
I
= 10 mA, V = 2.5 V
GS
4
DS (ON)
D
C
V
V
V
V
V
V
= 3 V, V
= 3 V, V
= 3 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
11.0
3.3
9.3
0.16
0.19
1.0
pF
pF
pF
iss
rss
oss
on
DS
DS
DS
DD
DD
GS
GS
GS
GS
Reverse transfer capacitance
Output capacitance
C
C
t
Turn-on time
Switching time
= 3 V, I = 10 mA, V
= 0~2.5 V
= 0~2.5 V
D
GS
GS
ms
Turn-off time
t
= 3 V, I = 10 mA, V
off
D
Gate-source resistor
R
GS
= 0~10 V
MW
Switching Time Test Circuit
(a) Test circuit
(b)
(c)
V
V
IN
GS
V
OUT
V
DS
2
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SSM6N04FU
(Q1, Q2 common)
3
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SSM6N04FU
(Q1, Q2 common)
*: Total rating
4
2003-03-28
SSM6N04FU
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2003-03-28
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