SSM6N36FE,LM(B [TOSHIBA]
Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;型号: | SSM6N36FE,LM(B |
厂家: | TOSHIBA |
描述: | Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 晶体 小信号场效应晶体管 开关 光电二极管 |
文件: | 总5页 (文件大小:197K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SSM6N36FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N36FE
○High-Speed Switching Applications
Unit: mm
1.6±0.05
•
•
1.5-V drive
Low ON-resistance: R = 1.52 Ω (max) (@V
= 1.5 V)
= 1.8 V)
= 2.5 V)
= 4.5 V)
= 5.0 V)
on
GS
1.2±0.05
: R = 1.14 Ω (max) (@V
on
GS
GS
GS
GS
: R = 0.85 Ω (max) (@V
on
: R = 0.66 Ω (max) (@V
on
1
2
3
6
: R = 0.63 Ω (max) (@V
on
5
4
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Drain–source voltage
Symbol
Rating
Unit
V
V
20
± 10
V
V
DSS
Gate–source voltage
GSS
DC
I
500
D
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
Drain current
mA
Pulse
I
1000
150
DP
6.Drain1
Drain power dissipation
Channel temperature
Storage temperature
P
(Note 1)
mW
°C
ES6
D
T
150
ch
JEDEC
JEITA
―
T
stg
−55 to 150
°C
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
TOSHIBA
2-2N1A
Weight: 3.0 mg (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
Q1
NX
Q2
1
2
3
1
2
3
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SSM6N36FE
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
V
V
I
I
= 1 mA, V
= 1 mA, V
= 0
20
12
⎯
⎯
⎯
⎯
⎯
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-source breakdown voltage
= - 10 V
Drain cutoff current
I
V
V
V
V
=20 V, V
= 0
⎯
1
μA
μA
V
DSS
DS
GS
DS
DS
GS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ±10 V, V
= 0
⎯
⎯
±1
GSS
DS
V
= 3 V, I = 1 mA
0.35
420
⎯
⎯
1.0
⎯
th
D
|Y |
fs
= 3 V, I = 200 mA
(Note2)
= 5.0 V (Note2)
= 4.5 V (Note2)
= 2.5 V (Note2)
= 1.8 V (Note2)
840
0.46
0.51
0.66
0.81
0.95
46
mS
D
I
I
I
I
I
= 200 mA, V
= 200 mA, V
= 200 mA, V
= 100 mA, V
0.63
0.66
0.85
1.14
1.52
⎯
D
D
D
D
D
GS
GS
GS
GS
⎯
Drain-source ON-resistance
R
Ω
⎯
DS (ON)
⎯
= 50 mA, V
= 1.5 V
(Note2)
⎯
GS
Input capacitance
C
C
⎯
iss
V
= 10 V, V
= 0, f = 1 MHz
GS
pF
nC
Output capacitance
Reverse transfer capacitance
Total Gate Charge
⎯
10.8
7.3
⎯
DS
oss
C
⎯
⎯
rss
Qg
⎯
1.23
0.60
0.63
30
⎯
V
V
= 10V, I = 0.5 A
D
DS
GS
Qgs
Qgd
Gate−Source Charge
Gate−Drain Charge
⎯
⎯
= 4.0 V
⎯
⎯
Turn-on time
Switching time
t
t
V
V
= 10 V, I = 200 mA
⎯
⎯
on
DD
GS
D
ns
V
= 0 to 2.5 V, R = 50 Ω
Turn-off time
⎯
75
⎯
G
off
Drain-source forward voltage
Note2: Pulse test
V
I
= -0.5 A, V = 0 V
GS
(Note2)
⎯
-0.88
-1.2
DSF
D
Switching Time Test Circuit (Q1, Q2 Common)
(a) Test Circuit
(b) V
(c) V
IN
2.5 V
0 V
90%
V
= 10 V
= 50 Ω
DD
2.5 V
0
OUT
R
G
10%
IN
D.U. ≤ 1%
: t , t < 5 ns
V
IN
r f
V
DD
Common Source
90%
10%
OUT
10 μs
Ta = 25°C
V
DD
V
DS (ON)
t
t
f
r
t
t
off
on
Usage Considerations
Let V be the voltage applied between gate and source that causes the drain current (I ) to below (1 mA for the
th
D
SSM6N36FE). Then, for normal switching operation, V
must be higher than V and V
must be lower than
GS(off)
GS(on)
th,
V
This relationship can be expressed as: V < V < V
GS(off) th GS(on).
th.
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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SSM6N36FE
I
– V
I – V
D GS
D
DS
1000
800
1000
100
10 V
2.5 V
1.8 V
1.5 V
4.5 V
Ta = 100 °C
600
400
10
1
− 25 °C
VGS = 1.2 V
25 °C
200
0
0.1
Common Source
Common Source
Ta = 25 °C
V
= 3 V
DS
0.01
0
0.2
0.4
0.6
0.8
1.0
0
1.0
2.0
3.0
Drain-source voltage
V
(V)
DS
Gate-source voltage
V
(V)
GS
R
– V
GS
DS (ON)
R
– I
D
DS (ON)
3
2
3
2
I
=200 mA
Common Source
D
Common Source
Ta = 25°C
1.8 V
1.5 V
25 °C
1
0
1
Ta = 100 °C
− 25 °C
VGS = 4.5V
200
2.5V
400
0
0
2
4
6
8
10
600
0
800
1000
Gate-source voltage
V
(V)
GS
Drain current
I
(mA)
D
R
– Ta
V
– Ta
th
DS (ON)
1.5
1.0
0.5
0
Common Source
= 3 V
I
= 50 m A / V = 1.5 V
GS
Common Source
D
V
DS
100 m A / 1.8 V
200 m A / 2.5 V
I
= 1 mA
D
1.0
0.5
0
200 m A / 4.5 V
200 m A / 5.0 V
−50
0
50
100
150
−50
0
50
100
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
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SSM6N36FE
|Y | – I
fs
I
– V
DS
D
DR
10000
1000
100
Common Source
= 3 V
V
DS
3000
1000
Ta = 25°C
25 °C
300
100
10
Common Source
Ta =100 °C
V
= 0 V
GS
D
1
I
G
DR
30
10
−25 °C
S
0.1
100
10
1000
1
0
–0.5
–1.0
–1.5
Drain current
I
(mA)
D
Drain-source voltage
V
(V)
DS
C – V
DS
t – I
D
1000
100
10
100
Common Source
t
f
off
V
V
= 10 V
DD
GS
50
30
= 0 to 2.5 V
C
iss
t
Ta = 25 °C
R
G
= 4.7 Ω
10
C
oss
C
rss
5
3
Common Source
Ta = 25°C
t
on
f = 1 MHz
t
r
V
= 0 V
GS
1
0.1
1
10
100
1
10
100
1000
Drain-source voltage
V
(V)
DS
Drain current
I
(mA)
D
P * – Ta
D
Dynamic Input Characteristic
250
Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm , Cu Pad: 0.135 mm2 × 6)
10
Common Source
= 0.5 A
I
D
200
150
100
Ta = 25°C
8
6
V
= 10 V
V
= 16 V
DD
DD
4
2
0
150
0
0
1
2
3
-40 -20
0
20
40
60 80 100 120 140 160
*: Total Rating
Ambient temperature Ta (°C)
Total Gate Charge Qg (nC)
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SSM6N36FE
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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2008-02-26
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