SSM6P25TU,LF(T [TOSHIBA]

Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET;
SSM6P25TU,LF(T
型号: SSM6P25TU,LF(T
厂家: TOSHIBA    TOSHIBA
描述:

Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET

开关 光电二极管 晶体管
文件: 总6页 (文件大小:186K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SSM6P25TU  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)  
SSM6P25TU  
High Speed Switching Applications  
Unit: mm  
Optimum for high-density mounting in small packages  
Low on-resistance:  
R
= 260m(max) (@V  
= 430m(max) (@V  
= -4 V)  
on  
on  
GS  
GS  
2.1±0.1  
1.7±0.1  
R
= -2.5 V)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 Common)  
1
2
6
5
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
4
3
V
-20  
± 12  
-0.5  
-1.5  
V
V
DS  
Gate-Source voltage  
V
GSS  
DC  
I
D
Drain current  
A
Pulse  
I
DP  
P
D
Drain power dissipation  
Channel temperature  
500  
mW  
1.Source1 4.Source2  
(Note 1)  
2.Gate1  
3.Drain2  
5.Gate2  
6.Drain1  
T
ch  
150  
°C  
°C  
Storage temperature range  
T
stg  
55 to 150  
UF6  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TOSHIBA  
2-2T1B  
Weight: 7.0 mg (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Note 1: Mounted on FR4 board. (total dissipation)  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )  
Marking  
Equivalent Circuit (top view)  
6
5
4
6
5
4
Q1  
PH  
Q2  
1
2
3
1
2
3
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is  
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects  
that come into direct contact with devices should be made of anti-static materials.  
Start of commercial production  
2004-03  
1
2014-03-01  
SSM6P25TU  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
= ± 12V, V  
= 0  
-20  
-8  
±1  
μA  
GSS  
GS  
DS  
V
V
I
I
= -1 mA, V  
= -1 mA, V  
= 0  
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain-Source breakdown voltage  
V
= +12 V  
= 0  
Drain cut-off current  
I
V
V
V
= -20 V, V  
-1  
μA  
V
DSS  
DS  
DS  
DS  
GS  
Gate threshold voltage  
Forward transfer admittance  
V
= -3 V, I = -0.1 mA  
-0.5  
0.65  
-1.1  
th  
D
Y ⏐  
= -3 V, I = -0.25 A  
(Note2)  
(Note2)  
(Note2)  
1.3  
210  
310  
218  
42  
S
fs  
D
I
I
= -0.25 A, V  
= -4 V  
260  
430  
D
D
GS  
GS  
Drain-Source on-resistance  
R
mΩ  
DS (ON)  
= -0.25 A, V  
= -2.5 V  
Input capacitance  
C
V
V
V
V
V
= -10 V, V  
= -10 V, V  
= -10 V, V  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
pF  
pF  
pF  
iss  
rss  
oss  
on  
DS  
DS  
DS  
DD  
GS  
GS  
GS  
GS  
Reverse transfer capacitance  
Output capacitance  
C
C
t
52  
Turn-on time  
Switching time  
= -10 V, I = -0.25 A,  
16  
D
ns  
= 0 to -2.5 V, R = 4.7 Ω  
Turn-off time  
t
15  
G
off  
Note2: Pulse test  
Switching Time Test Circuit  
(a) Test circuit  
(b) V  
IN  
0 V  
OUT  
10%  
0
IN  
90%  
2.5V  
10 μs  
R
2.5 V  
L
V
DD  
(c) V  
V
OUT  
DS (ON)  
90%  
V
= -10 V  
= 4.7 Ω  
DD  
R
G
10%  
Duty 1%  
: t , t < 5 ns  
V
DD  
t
t
f
r
V
IN  
r f  
Common Source  
t
t
off  
on  
Ta = 25°C  
Precaution  
V
th  
can be expressed as the voltage between gate and source when the low operating current value is I =-100 μA for  
D
this product. For normal switching operation, V  
requires a higher voltage than V and V requires a lower  
GS (off)  
GS (on)  
th  
voltage than V  
th.  
(The relationship can be established as follows: V  
< V < V  
)
GS (off)  
th  
GS (on)  
Please take this into consideration when using the device.  
2
2014-03-01  
SSM6P25TU  
ID - VDS  
-3.0  
ID - VGS  
-10000  
-1600  
-1400  
-1200  
-1000  
-800  
-600  
-400  
-200  
0
-5.0  
1000  
-
-2.0  
100  
-
-4.0  
10  
-
Ta=100°C  
-1.8  
-
1
25°  
-25°C  
VGS=-1.6  
-
0.1  
Common Source  
VDS=-3V  
Common Source  
Ta=25°C  
-
-
0.01  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
0
-1  
-2  
-3  
Drain-Source voltage VDS (V)  
Gate-Source voltage VGS (V)  
RDS(ON) - VGS  
RDS(ON) - ID  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
Common Source  
ID=-250mA  
-2.5V  
Ta=100°C  
VGS=-4V  
25°C  
-25°C  
Common Source  
Ta=25°C  
0
0
-200 -400 -600 -800 -1000 -1200 -1400 -1600  
Drain current ID (mA)  
0
-1 -2 -3 -4 -5 -6 -7 -8 -9 -10  
Gate-Source voltage VGS (V)  
RDS(ON) - Ta  
Vth - Ta  
500  
400  
300  
200  
100  
0
-1  
Common Source  
ID=-250mA  
-0.8  
-0.6  
-0.4  
-0.2  
0
-2.5V  
VGS=-4V  
Common Source  
ID=-0.1mA  
VDS=-3V  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
Ambient temperature Ta (°C)  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
Ambient temperature Ta (°C)  
3
2014-03-01  
SSM6P25TU  
|Yfs| - ID  
IDR - VDS  
Common Source  
VGS=0V  
Ta=25°C  
10  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
25°C  
-25°C  
1
Ta=100°C  
Common Source  
VDS=-3V  
Ta=25°C  
0
-10  
-100  
-1000  
-10000  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
Drain-Source voltage VDS (V)  
Drain current ID (mA)  
C - VDS  
t - ID  
1000  
100  
10  
1000  
100  
10  
Common Source  
VDD=-10V  
VGS=0~-2.5V  
Ta=25°C  
toff  
tf  
Ciss  
ton  
tr  
Coss  
Crss  
Common Source  
VGS=0V  
f=1MHz  
Ta=25°C  
1
-0  
-1  
-10  
-100  
-10  
-100  
-1000  
-10000  
Drain current ID (mA)  
Drain-Source voltage VDS (V)  
PD* - Ta  
1000  
800  
600  
400  
200  
0
mounted FR4 board  
t=10s  
DC  
(25.4mm*25.4mm*1.6t  
2
Cu Pad :645mm )  
0
20  
40  
60  
80 100 120 140 160  
Ambient temperature Ta(  
)
*:Total Rating  
4
2014-03-01  
SSM6P25TU  
r
th  
– t  
w
1000  
100  
10  
Single pulse  
Mounted on FR4 board  
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )  
1
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse width  
t
(s)  
w
5
2014-03-01  
SSM6P25TU  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively "Product") without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the  
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of  
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes  
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the  
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their  
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such  
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,  
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating  
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR  
APPLICATIONS.  
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE  
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH  
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT  
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without  
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for  
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,  
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE  
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your  
TOSHIBA sales representative.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without  
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile  
technology products (mass destruction weapons). Product and related software and technology may be controlled under the  
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the  
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited  
except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES  
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.  
6
2014-03-01  

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