SSM6P54TU [TOSHIBA]
High-Speed Switching Applications; 高速开关应用
| 型号： | SSM6P54TU |
| 厂家： | 
TOSHIBA |
| 描述： | High-Speed Switching Applications |
| 文件： | 总6页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6P54TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P54TU
○High-Speed Switching Applications
Unit : mm
○Power Management Switch Applications
2.1±0.1
1.7±0.1
•
•
1.5 V drive
Suitable for high-density mounting due to compact package
•
Low on-resistance : R = 228 mΩ (max) (@ V
= -2.5 V)
= -1.8 V)
= -1.5 V)
on
GS
: R = 350 mΩ (max) (@ V
on
GS
1
2
6
5
: R = 555 mΩ (max) (@ V
on
GS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Symbol
Rating
-20
Unit
V
4
3
V
DS
Gate-Source voltage
V
± 8
V
GSS
DC
I
-1.2
D
Drain current
A
Pulse
I
-2.4
DP
Drain power dissipation
Channel temperature
P (Note 1)
500
mW
°C
D
1.Sorce1
2.Gate1
3.Drain2
4.Source 2
5.Gate2
6.Drain1
T
ch
150
Storage temperature range
T
stg
−55 ~ 150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
UF6
JEDEC
JEITA
―
―
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
TOSHIBA
2-2T1B
Weight: 7.0 mg (typ.)
Note 1: Mounted on an FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
−20
−12
⎯
Typ.
⎯
Max
⎯
Unit
V
V
V
I
I
= −1 mA, V
= −1 mA, V
= 0
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-Source breakdown voltage
= +8 V
⎯
⎯
Drain cut-off current
I
V
V
V
V
= −20 V, V
= 0
⎯
−10
± 1
−1.0
⎯
μA
μA
V
DSS
DS
GS
DS
DS
GS
DS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ± 8 V, V
= 0
⎯
⎯
GSS
V
= −3 V, I = −1 mA
−0.3
1.7
⎯
⎯
th
D
|Y |
fs
= -3 V, I = -0.6 A
(Note 2)
(Note 2)
(Note 2)
(Note 2)
3.4
162
212
249
331
48
S
D
I
I
I
= -0.6 A, V
= -0.6 A, V
= -0.1 A, V
= -2.5 V
= -1.8 V
= -1.5 V
228
350
555
⎯
D
D
D
GS
GS
GS
Drain-Source on-resistance
R
mΩ
⎯
DS (ON)
⎯
Input capacitance
C
⎯
iss
V
= −10 V, V
= 0
GS
DS
pF
ns
Output capacitance
C
⎯
⎯
oss
f = 1 MHz
Reverse transfer capacitance
C
⎯
39
⎯
rss
on
Turn-on time
Switching time
t
t
⎯
19
18
⎯
V
V
= −10 V, I = −0.6 A
D
DD
GS
= 0 ~ −2.5 V, R = 4.7 Ω
G
Turn-off time
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
off
Total gate charge
Q
g
7.7
4.9
2.8
V
V
= −16 V, I
= − 4 V
= -1.2 A,
DS
DS
GS
nC
V
Gate-Source charge
Gate-Drain charge
Q
Q
gs
gd
Drain-Source forward voltage
V
I
= 1.2 A, V = 0
GS
(Note 2)
0.8
1.2
⎯
DSF
D
Note 2:
Pulse test
1
2007-11-01
SSM6P54TU
Switching Time Test Circuit
(a) Test Circuit
(b) V
IN
0 V
10%
OUT
0
IN
90%
−2.5 V
−2.5V
R
L
V
DS (ON)
90%
10%
10 μs
V
(c) V
DD
OUT
V
= -10 V
DD
V
DD
R
G
= 4.7 Ω
t
t
f
r
<
D.U. 1%
V
: t , t < 5 ns
IN
r
f
t
t
off
on
Common Source
Ta = 25 °C
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
Q1
PJ
Q2
1
2
3
1
2
3
Precaution
V
th
can be expressed as the voltage between the gate and source when the low operating current value is I = -1mA
D
for this product. For normal switching operation, V
requires a higher voltage than V and V
requires a
GS (on)
th
GS (off)
lower voltage than V . (The relationship can be established as follows: V
th
< V < V
)
GS (off)
th
GS (on).
Be sure to take this into consideration when using the device.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
2
2007-11-01
SSM6P54TU
I
– V
DS
D
I
– V
GS
D
-2.5
-10000
-1000
-100
-10
-4 V
Common Source
= -3 V
-1.8 V
-2.5 V
V
DS
-2
-1.5
-1
-1.5 V
Ta = 85 °C
25 °C
-1
VGS = -1.2 V
-0.5
−25 °C
-0.1
Common Source
Ta = 25 °C
0
-0.01
0
-0.5
-1
-1.5
-2
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2 -1.4
-1.6
Drain - Source voltage
V
(V)
DS
Gate - Source voltage
V
(V)
GS
R
– V
GS
R
– V
GS
DS (ON)
DS (ON)
450
450
I
= -0.1 A
I
= -0.6 A
D
D
400
350
400
350
Common Source
Common Source
300
250
200
150
300
250
200
150
100
50
25 °C
25 °C
Ta = 85 °C
Ta = 85 °C
100
−25 °C
−25 °C
50
0
0
0
-2
-4
-6
-8
0
-2
-4
-6
-8
Gate - Source voltage
V
(V)
Gate - Source voltage
V
(V)
GS
GS
R
– I
D
DS (ON)
R
– Ta
DS (ON)
450
400
350
500
400
300
Common Source
Common Source
-0.6 A / -1.8 V
I
= -0.1 A / V = -1.5 V
GS
Ta = 25 °C
D
300
250
VGS = -1.5 V
200
-1.8 V
-2.5 V
200
100
150
100
50
-0.6 A / -2.5 V
0
0
−50
0
-0.5
-1
-1.5
-2
-2.5
0
50
100
150
Drain current
I
(A)
D
Ambient temperature Ta (°C)
3
2007-11-01
SSM6P54TU
V
– Ta
|Y | – I
fs
th
D
-0.8
-0.7
30
10
Common Source
Common Source
= -3 V
V
I
= -3 V
DS
V
DS
= -1 mA
Ta = 25 °C
D
-0.6
-0.5
-0.4
-0.3
-0.2
3
1
0.3
0.1
-0.1
0
0.03
0.01
-10
-100
−25
0
25
50
75
100
125
150
1
-1000
-10000
Drain current
I
(mA)
D
Ambient temperature Ta (°C)
C – V
Dynamic Input Characteristic
DS
5000
3000
-10
-8
-6
1000
500
300
V
= -16 V
DD
C
iss
-4
-2
100
50
30
Common Source
Ta = 25 °C
C
oss
Common Source
= -1.2 A
Ta = 25 °C
C
rss
f = 1 MHz
I
D
V
= 0 V
GS
10
-0.1
0
-1
-10
-100
0
5
10
15
20
Total gate charge
Q
g
(nC)
Drain – Source voltage
V
(V)
DS
t – I
D
1000
I
– V
DS
DR
Common Source
-2
V
V
= -10 V
DD
GS
Common Source
= 0 V
= 0 ∼ -2.5 V
V
GS
Ta = 25 °C
= 4.7 Ω
D
t
off
Ta = 25 °C
R
G
-1.5
100
I
DR
G
t
f
S
-1
-0.5
0
t
on
t
r
10
1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0.1
1
10
Drain-Source voltage
V
(V)
Drain current
I
(A)
DS
D
4
2007-11-01
SSM6P54TU
r
th
– t
w
1000
100
10
Single Pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
P
– Ta
D
1.2
1
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm )
t = 10s
* Total Rating
0.8
0.6
DC
0.4
0.2
0
0
50
100
150
Ambient temperature Ta (°C)
5
2007-11-01
SSM6P54TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01
相关型号：
SSM6P54TU(TE85L,F)
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TOSHIBA
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