TA2131FNG [TOSHIBA]
Low Current Consumption Headphone Amplifier for Portable MD Player (With Bass Boost Function); 低电流消耗耳机放大器的便携式MD播放器（带低音增强功能）
| 型号： | TA2131FNG |
| 厂家： | 
TOSHIBA |
| 描述： | Low Current Consumption Headphone Amplifier for Portable MD Player (With Bass Boost Function) |
| 文件： | 总19页 (文件大小：412K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TA2131FNG
TOSHIBA Bipolar Linear IC Silicon Monolithic
TA2131FNG
Low Current Consumption Headphone Amplifier for Portable MD Player (With Bass Boost
Function)
The TA2131FNG is a low current consumption headphone
amplifier developed for portable digital audio. It is particularly
well suited to portable MD players that are driven by a single dry
cell. It also features a built-in bass boost function with AGC, and
is capable of bass amplification of DAC output and analog signals
such as tuner.
Features
•
Low current consumption: I
(V
) = 0.55 mA (typ.)
) = 0.20 mA (typ.)
CCQ CC1
Weight: 0.14 g (typ.)
I
(V
CCQ CC2
•
Output power: P = 8 mW (typ.)
o
(V
CC1
= 2.8 V, V
= 1.2 V, f = 1 kHz, THD = 10%, R = 16 Ω)
CC2 L
•
•
•
•
•
•
•
Low noise: V = −102dBV (typ.)
no
Built-in low-pass boost (with AGC)
I/O pin for beep sound
Outstanding ripple rejection ratio
Built-in power mute
Built-in power ON/OFF switch
Operating supply voltage range (Ta = 25°C): V
V
= 1.8~4.5 V
= 0.9~4.5 V
CC1
CC2
1
2006-04-19
TA2131FNG
Block Diagram
DAC OUT
V
CC1
BEEP
V
CC1
V
ref
V
ref
(2.8 V)
OFF
ON
OFF
OFF
ON
ON
BST
BST
SW
V
IN
BEEP
IN
MT
SW
PW
SW
V
ref
MT
TC
ref
V
ref
GND
20
V
IN
B
LPF
NF
1
CC1
1
24
23
22
21
19
18
17
16
15
14
13
BOOST MUTE
SW SW
PW
SW
V
ref
BEEP
BST
1
BST
PW
PW
A
2
B
BST
AGC
1
2
3
4
5
6
7
8
9
10
BEEP BEEP
11
12
LPF
BST
BST
OUT
AGC
IN
DET
OUT
PWR
GND
OUT
V
CC2
IN
A
2
B
A
NF
2
OUT OUT
V
A
B
ref
R
L
R
L
DAC OUT
V
ref
V
ref
+B (1.2 V)
2
2006-04-19
TA2131FNG
Terminal Explanation (Terminal voltage: Typical terminal voltage at no signal with test
circuit, V
= 2.8 V, V
= 1.2 V, Ta = 25°C)
CC1
CC2
Terminal
Voltage
(V)
Terminal
Explanation
Terminal No.
Internal Circuit
BST amplifier 1
output
(filter terminal)
AGC
ADD
PW
A
1
LPF
2
0.61
BST
1
12
23
BST
AMP
2
20 kΩ
20 kΩ
12 kΩ
10 kΩ
ADD amplifier output
(filter terminal)
13
23 LPF
0.61
0.61
1
PW
B
30 kΩ
24
1
24 BST NF
BST amplifier 1 NF
1
V
ref
V
ref
BST amplifier 2 NF
terminal
(low-pass
compensation
condenser
2
3
6
8
BST NF
2
PW
A
connection terminal)
12
0.61
0.61
0.61
8
ADD
BST amplifier 2
output terminal
BST OUT
10 kΩ
15 kΩ
BST1
OUT
OUT
OUT
B
BST
3
2
Power amplifier
output
10 kΩ
A
10 kΩ
15 kΩ
12 IN
A
6
Power amplifier
input
13
PW
B
13 IN
B
2
3
2006-04-19
TA2131FNG
Terminal
Voltage
(V)
Terminal
Terminal No.
Internal Circuit
Explanation
14
4
Signal input level to
BST amplifier is
varied according to
the input level to the
boost AGC input
terminal. Input
V
ref
4
AGC IN
0.61
10 kΩ
impedance: 15 kΩ
(typ.)
14
Smoothing of boost
AGC level detection
5
DET
⎯
5
GND of power
amplifier output
stage
7
9
PWR GND
⎯
⎯
0
V
CC
(+B) at power
V
CC2
amplifier output
stage
1.2
10 BEEP OUT
A
B
14
19
Beep sound output
terminal
⎯
11 BEEP OUT
10 kΩ
10
11
Beep sound input
terminal
19 BEEP IN
Receives beep
sound signals from
microcomputer.
0
14
V
Main V
⎯
2.8
CC1
CC
14
Mute smoothing
Power mute switch
Reduces the shock
noise during
15 MT TC
1.2
15
switching
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2006-04-19
TA2131FNG
Terminal
Voltage
(V)
Terminal
Terminal No.
Internal Circuit
Explanation
V
CC1
14
Power ON/OFF
switch
“H” level:
47 kΩ
16
16 PW SW
IC operation
⎯
“L” level: IC OFF
Refer to function
explanation 5
V
CC1
14
17
Mute switch
“L” level: mute reset
“H” level: mute ON
Refer to function
explanation 5
17 MT SW
⎯
47 kΩ
14
18
Bass boost ON/OFF
switch
“H” level/OPEN:
BST ON
“L” level: BST OFF
Refer to function
explanation 5
20 kΩ
18 BST SW
⎯
GND of input stage
in power amplifier
20 GND
⎯
0
14
Reference voltage
circuit filter terminal
21
V
IN
0.61
ref
10 kΩ
21
22
Reference voltage
circuit
22
V
0.61
ref
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2006-04-19
TA2131FNG
Function Explanation
1. Bass Boost Function
1-1 Description of Operation
TA2131FNG has a bass boost function for bass sound reproduction built-in to the power amplifier.
With the bass boost function, at medium levels and lower, channel A and channel B are added for the
low frequency component, and output to BST amplifier 2 (BST ) in negative phase. That signal is
2
inverted and added before being subjected to bass boost. If the signal of the low-frequency component
reaches a high level, the boost gain is controlled to main a low distortion (see Fig.1).
20 kΩ
V (OUT)
V (R )
L
IN
A
OUT
A
22
220 µF
PW
ADD
10 kΩ
2
A
10 kΩ
16 Ω
20 kΩ
10 µF
10 µF
12 kΩ
R
L
V
ref
DAC
OUT
BST
1
BST
NF
10 kΩ 15 kΩ
10 kΩ 15 kΩ
BST
2
2
1 µF
8
V
ref
10 kΩ
20 kΩ
30 kΩ
IN
21
B
V (NF )
2
220 µF
5 kΩ
BST
AGC
10 kΩ
PW
4
B
16 Ω
OUT
B
R
L
AGC
IN
DET
5
BST NF
10
BST OUT
1
LPF
LPF
2
1
11
6
9
7
V (LPF )
2
V (LPF )
V (NF )
1
1
V (BST OUT)
V
V
ref
ref
V
ref
Figure 1 System Diagram of Bass Boost
1-2 AGC Circuit
The AGC circuit of the bass boost function detects with “AGC DET” the voltage component created
by “BST ,” and as the input level increases, the variable impedance circuit is changed, and the bass
2
boost signal is controlled so that it is not assigned to BST amplifier 1. In this way, the bass signal to
“BST ” input is shut-off, and that boost gain is controlled.
2
1-3 Bass Boost System
As shown in Fig.1, the flow of the bass boost signal is that the signal received from power amplifier
input goes through LPF , ADD amplifier, ATT (variable impedance circuit), BPF (BST amplifier 1)
1
1
and LPF , and the negative phase signal to the power amplifier input signal is output from BST
2
amplifier 2. The reason why it becomes the negative phase of the BST amplifier 2 signal is that the
phase is inverted by 180° in the audible bandwidth by the secondary characteristics of LPF and
1
LPF in Fig.1.
2
Ultimately the main signal and the bass boost signal formed before BST are added.
2
Fig.2 shows the frequency characteristics to each terminal.
6
2006-04-19
TA2131FNG
40
20
V (OUT)
V (R
)
L
V (NF
)
2
V (BST OUT)
0
−20
−40
V (LPF
)
2
V (NF
)
1
V (LPF
)
1
−60
1
10
100
1 k
10 k
100 k
f
(Hz)
Figure 2 During Bass Boost (Frequency Characteristics to Each Terminal)
2.
Low-Pass Compensation
2-1. Function
In C-couple type power amplifiers, it is necessary to give the output condenser C a large capacity to
flatten out the frequency characteristics to the low frequency band (this is because the loss in the low
frequency bandwidth becomes larger due to the effect of the high-pass filter comprising C and R ).
L
Particularly when the headphone load is approximately 16 Ω and an attempt is being made to achieve
frequency characteristics of ±3 dB at 20 Hz, a large capacity condenser of C = 470 µF is required.
Bearing this situation in mind, a low-pass compensation function was built in to the TA2131FNG,
and while reducing the capacity of the output coupling condenser, almost flat (±3 dB) frequency
characteristics in all audible bandwidths (20 Hz to 20 kHz) have been achieved.
Fig.3 shows the low-pass system diagram, and Fig.4 shows the frequency characteristics at each point.
In Fig.4, (a) represents the status lost by the low-pass as a result of the high-pass filter comprising
the headphone load (R = 16 Ω) and the output coupling condenser (220 µF) in the C-coupling system.
L
20 kΩ
10 kΩ
V (OUT)
IN
V (R )
L
A
OUT
A
12
220 µF
PW
8
A
16 Ω
10 µF
10 µF
ADD
R
L
V
ref
DAC
OUT
BST
NF
10 kΩ 15 kΩ
10 kΩ 15 kΩ
BST
2
2
1 µF
2
V
ref
10 kΩ
20 kΩ
13
IN
220 µF
B
10 kΩ
20 kΩ
PW
6
B
16 Ω
OUT
B
R
L
Figure 3 Low-Pass Compensation System Diagram
7
2006-04-19
TA2131FNG
20
10
(b)
(c)
0
(a)
−10
−20
1 k
1
10
100
10 k
100 k
f
(Hz)
Figure 4 Power Amplifier Frequency Characteristics
<Principle of Low-Pass Compensation>
The low-pass component alone is extracted from the composite signal of PW /PW output, and that
A
B
frequency signal is fed back to PW /PW once more via the inversion amplifier, thereby making it
A
B
possible to increase the gain only of the low-pass component. The frequency characteristics of the
power amplifier output V (OUT) in this state are shown in Fig.4 (b). In practice they are the
frequency characteristics (c) viewed from load terminal V (R ), and the low-pass is compensated
L
relative to the state in (a).
2-2. Low-Pass Compensation Condenser and Crosstalk
In this low-pass compensation condenser circuit, processing is carried out using the composite
signal of power amplifier output, so this affects crosstalk, according to the amount of compensation.
f characteristics and crosstalk generated by the capacity of the condenser for compensation (2-pin) are
shown below.
10
V
V
= 2.8 V
= 1.2 V
CC1
CC2
R
R
= 620 Ω
g
L
= 16 Ω
Filter: LPF 80 kHz
C = 0.47 µF
Output C = 220 µF
0
V
ref short
C = 1 µF
C = 2.2 µF
−10
10
30
100
300
1 k
3 k
10 k
30 k
f
(Hz)
Figure 5 Condenser and f Characteristics for Low-Pass Compensation
8
2006-04-19
TA2131FNG
CT – f
V
= 2.8 V
= 1.2 V
CC1
V
CC2
0
R
R
V
= 620 Ω
= 16 Ω
= −22dBV
g
L
o
WIDE BAND
Output C = 220 µF
C = 0.47 µF
−20
C = 1 µF
C = 2.2 µF
−40
−60
V
ref short
10
30
100
300
1 k
3 k
10 k 30 k 100 k
f
(Hz)
Figure 6 Low-Pass Compensation Condenser and Crosstalk
3.
Beep
Beep sound signals from microcomputer can be received by the beep input terminal (19-pin).
The PW and PW of the power amplifier during power mute are turned OFF, and the beep signal input
A
B
from BEEP-IN (19-pin) is output from the BEEP-OUT terminal (10/11-pin) as fixed current, after passing
through the converter and current amplification stage. Connecting this terminal to the headphone load
outputs the beep sound.
If the beep sound is not input, fix the BEEP-IN (19-pin) terminal to GND level.
V
CC
PW SW
(18-pin)
ON
OFF
OFF
OFF
MT SW
(17-pin)
ON
OFF
BEEP IN
(15-pin)
200 ms
100 ms
100 ms
20
15
I
BEEP
23
24
I
BEEP
I
D
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2006-04-19
TA2131FNG
4.
5.
Power Switch
As long as the power switch is not connected to “H” level, the IC does not operate. If it malfunctions due
to external noise, however, it is recommended to connect a pull-down resistor externally (the power switch
is set to be highly sensitive).
Threshold Voltages of Switches
(1) PW SW
(2) MT SW, BST SW
5
5
4.5 V
4.5 V
4
4
H
3
2
3
2
1
H
1.6 V
0.6 V
1
0.8 V
L
0.3 V
L
0
1
2
3
4
5
0
1
2
3
4
5
Power supply voltage
V
(V)
Power supply voltage
V
(V)
CC
CC
PW SW (V
)
MT SW (V
)
16
17
“H” level
“L” level
IC operation
IC OFF
“H” level
“L” level
Mute ON
Mute reset
BST SW (V
BST ON
)
18
“H” level/OPEN
“L” level
BST OFF
6.
These capacitors which prevent oscillation of the power amplifier, and are between
the V and V -GND must have a small temperature coefficient and outstanding
ref
CC
frequency characteristics.
10
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TA2131FNG
Absolute Maximum Ratings
Characteristic
Symbol
Rating
Unit
Supply voltage
V
4.5
100
V
CC
Output current
I
mA
mW
°C
o (peak)
Power dissipation
Operating temperature
Storage temperature
P
(Note)
500
D
T
opr
−25~75
−55~150
T
°C
stg
Note: Derated above Ta = 25°C in the proportion of 4 mW/°C.
Electrical Characteristics (Unless specified otherwise, V
= 2.8 V, V
= 1.2 V,
CC2
CC1
R = 600 Ω, R = 16 Ω, f = 1 kHz, Ta = 25°C)
g
L
Characteristic
Symbol
Test condition
Min
Typ.
0.1
Max
Unit
I
I
I
I
I
I
I
I
IC OFF (V
IC OFF (V
), SW1: b, SW2: b
), SW1: b, SW2: b
⎯
⎯
5
5
CC1
CC2
CC3
CC4
CC5
CC6
CC7
CC8
CC1
CC2
µA
0.1
0.35
5
MUTE ON (V
MUTE ON (V
), SW1: a, SW2: b
), SW1: a, SW2: b
⎯
0.50
10
mA
CC1
CC2
Quiescent supply current
⎯
µA
No signal (V
No signal (V
), SW1: a, SW2: a
), SW1: a, SW2: a
⎯
0.55
0.20
0.6
5.3
12
0.75
0.40
⎯
CC1
CC2
⎯
mA
P
o
P
o
V
o
V
o
= 0.5 mW + 0.5 mW output (V
= 0.5 mW + 0.5 mW output (V
= −22dBV
)
)
⎯
CC1
CC2
Power supply current during
drive
⎯
⎯
Gain
G
10
−1.5
5
14
V
dB
Channel balance
Output power
CB
= −22dBV
0
1.5
⎯
P
omax
THD = 10%
= 1 mW
8
mW
%
Total harmonic distortion
Output noise voltage
Crosstalk
THD
P
o
⎯
0.1
−102
−48
0.3
−96
⎯
V
R
= 600 Ω, Filter: IHF-A, SW4: b
= −22dBV
⎯
dBV
no
g
o
CT
V
−42
f = 100 Hz, V = −20dBV
r
r
RR1
−71
−77
⎯
inflow to V
CC2
Ripple rejection ratio
dB
f = 100 Hz, V = −20dBV
r
r
RR2
ATT
−54
−90
−53
−64
−100
−48
⎯
⎯
inflow to V
CC1
Mute attenuation
V
o
= −12dBV, SW2: a → b
Beep sound output
voltage
VBEEP
V Beep IN = 2 V , SW2: b
−43
dBV
dB
p-o
V
= −20dBV, f = 100 Hz,
o
BST1
BST2
BST3
1
4
7
SW3: ON → OPEN
V
= −30dBV, f = 100 Hz,
o
Boost gain
10
13
16
SW3: ON → OPEN
V
= −50dBV, f = 100 Hz,
o
13.5
16.5
19.5
SW3: ON → OPEN
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2006-04-19
TA2131FNG
Test Circuit
V
ref
R
g
= 600 Ω
V
CC1
V
CC1
V
ref
V
ref
(2.8 V)
(b)
(a)
(b)
(a)
(a)
SW4B
(b)
SW2
SW1
OFF
ON
SW3
24
23
LPF
22
21
20
19
18
17
16
15
14
13
IN
BST
V
ref
GND
V
CC1
V
ref
BEEP BST MT SW PW SW MT TC
IN
1
B
NF
1
IN
SW
TA2131FNG
PWR
GND
BST
BST
OUT
AGC
IN
BEEP BEEP
LPF
DET
5
OUT
6
OUT
8
V
IN
A
NF
2
OUT
OUT
2
B
A
CC2
A
B
1
2
3
4
7
9
10
11
12
22 kΩ
0.1 µF
(*)
(*)
SW4A
(a)
(b)
V
ref
V
ref
+B (1.2 V)
V
ref
(*) 0.22 µF + 10 Ω
Monolithic ceramic capacitor
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2006-04-19
TA2131FNG
Application Circuit 1
DAC OUT
V
ref
V
ref
V
CC1
BEEP
V
CC1
(2.8 V)
OFF
OFF
ON
ON
0.1 µF
V
ref
24
23
LPF
22
21
20
19
18
17
16
15
14
13
IN
BST
V
ref
GND
V
V
BEEP BST MT SW PW SW MT TC
IN
1
CC1
B
ref
NF
1
IN
SW
TA2131FNG
PWR
GND
BST
BST
OUT
AGC
IN
BEEP BEEP
LPF
1
DET
5
OUT
6
OUT
8
V
IN
A
2
NF
2
B
A
CC2
OUT
OUT
A
B
2
3
4
7
9
10
11
12
V
ref
22 kΩ
0.1 µF
(*)
(*)
R
L
R
L
DAC OUT
V
ref
V
ref
+B (1.2 V)
(*) 0.22 µF + 10 Ω
Monolithic ceramic capacitor
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TA2131FNG
Application Circuit 2 (Low-Pass Compensation/Bass Boost Function/Beep Not Used)
DAC OUT
V
CC1
V
CC1
V
ref
(2.8 V)
OFF
OFF
ON
ON
V
ref
24
23
LPF
22
21
20
19
18
17
16
15
14
13
IN
BST
V
ref
GND
V
V
BEEP BST MT SW PW SW MT TC
IN
1
CC1
B
ref
NF
1
IN
SW
TA2131FNG
PWR
GND
BST
BST
OUT
AGC
IN
BEEP BEEP
LPF
DET
5
OUT
6
OUT
8
V
IN
A
NF
2
OUT
OUT
2
B
A
CC2
A
B
1
2
3
4
7
9
10
11
12
V
ref
(*)
(*)
R
L
R
L
DAC OUT
V
ref
V
ref
V
ref
+B (1.2 V)
(*) 0.22 µF + 10 Ω
Monolithic ceramic capacitor
14
2006-04-19
TA2131FNG
Characteristics
(Unless otherwise specified V
= 2.8 V, V
= 1.2 V, R = 600 Ω, f = 1 kHz, Ta = 25°C)
CC2 g
CC1
I
– V
V
DC
– V
(V , OUT)
ref
CC
CC2
CC2
1.0
0.8
0.6
1.0
0.8
0.6
I
CC5
0.4
0.2
0
0.4
0.2
0
I
CC6
0.6
0.8
1.0 1.2 1.4
Supply voltage
1.6
1.8
CC2
2.0 2.2
(V)
2.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.4
V
Supply voltage
V
(V)
CC2
I
– V
MUTE ON
P – V
o CC2
CC
CC2
1.0
0.8
0.6
100
30
10
3
1
0.4
0.2
0
I
CC3
0.3
0.1
THD = 10 %
I
A/Bch IN
CC4
0.6
0.8
1.0 1.2 1.4
Supply voltage
1.6
1.8
CC2
2.0 2.2
(V)
2.4
0.6
0.8
1.0 1.2 1.4
Supply voltage
1.6
1.8
CC2
2.0
(V)
2.2
V
V
I
– P
V
– V
no CC2
CC
o
−80
−85
100
IHF-A
A/Bch IN
30
10
−90
I
CC8
−95
−100
−105
−110
−115
−120
3
1
I
CC7
0.3
0.1
0.01
0.03
0.1
0.3
1
3
10
30
0.6
0.8
1.0
1.2 1.4
1.6
1.8
CC2
2.0
(V)
2.2
Output voltage
P
(mW)
Supply voltage
V
o
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2006-04-19
TA2131FNG
THD – P
R.R. – V
inflow to V
CC1
o
CC2
10
0
f
r
= 100 Hz
V
r
= −20dBV
3
1
20
40
60
0.3
0.1
10 kHz
100 Hz/1 kHz
0.03
0.01
80
0.1
0.3
1
3
10
30
100
300
100
0.4
0.8
1.2
1.6
2.0
2.4
2.4
10
Output voltage
P
(mW)
Supply voltage
V
(V)
o
CC2
THD – V
R.R. – V
inflow to V
CC2
CC2
CC
30
10
0
R
= 16 Ω
L
f
= 100 Hz
r
P
o
= 1 mW
V
= −20dBV
r
A/Bch IN
−20
3
1
−40
−60
0.3
0.1
10 kHz
100 Hz
−80
1 kHz
0.8
0.03
0.6
−100
0.4
1.0 1.2
1.4
1.6
1.8
2.0
(V)
2.2
2.4
0.8
1.2
1.6
2.0
Supply voltage
V
Supply voltage
V
(V)
CC2
CC2
V
– f
BEEP
o
0
−10
−20
−30
−40
−30
−40
−50
−60
−70
−80
−50
−60
−70
−90
f
= 400 Hz
BEEP
−100
Rectangle wave
−110
0.1
10
30
100
300
1 k
3 k 10 k
30 k
0.3 0.5
Beep input voltage
1
3
5
Frequency
f
(Hz)
V
(Vp-o
)
(V)
BEEP
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TA2131FNG
CT – f
I
– Ta
CC
0
10
20
30
40
1.0
0.8
0.6
0.4
0.2
0
V
= −22 dBV
o
Application circuit 1
I
CC5
(No use Low-Pass
Compensation)
50
60
70
I
CC6
Application circuit 2
10
30
100
300
1 k
3 k 10 k
30 k
−50
−25
0
25
50
75
100
Frequency
f
(Hz)
Ambient temperature Ta (°C)
V
– Ta
DC
1.0
0.8
0.6
0.4
0.2
0
−50
−25
0
25
50
75
100
Ambient temperature Ta (°C)
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TA2131FNG
Package Dimensions
Weight: 0.14 g (typ.)
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2006-04-19
TA2131FNG
RESTRICTIONS ON PRODUCT USE
060116EBA
• The information contained herein is subject to change without notice. 021023_D
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc. 021023_A
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk. 021023_B
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others. 021023_C
• The products described in this document are subject to the foreign exchange and foreign trade laws. 021023_E
About solderability, following conditions were confirmed
• Solderability
(1) Use of Sn-37Pb solder Bath
· solder bath temperature = 230°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
· solder bath temperature = 245°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
19
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