TA2153FN [TOSHIBA]

RF Amplifier for Digital Servo CD System; 射频放大器为数字伺服CD系统
TA2153FN
型号: TA2153FN
厂家: TOSHIBA    TOSHIBA
描述:

RF Amplifier for Digital Servo CD System
射频放大器为数字伺服CD系统

射频放大器 CD
文件: 总9页 (文件大小:124K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TA2153FN  
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic  
TA2153FN  
RF Amplifier for Digital Servo CD System  
TA2153FN is a 3-beam type PUH compatible RF amplifier for  
digital servo to be used in the CD system.  
In combination with a CMOS single chip processor  
TC9462F/TC9495F, a CD system can be composed very simply.  
Features  
·
·
·
·
·
·
·
·
·
·
·
·
Built-in amplifier for reference (VRO, 2VRO) supply.  
Built-in auto laser power control circuit.  
Built-in RF amplifier.  
Built-in AGC amplifier.  
Built-in focus error amp and tracking error amp.  
Built-in sub-beam adder signal amplifier.  
Built-in gain change circuit for CD-RW.  
Capable of tracking balance control with TC9462F/TC9495F.  
Capable of RF gain adjustment circuit with TC9462F/TC9495F.  
Built-in signal amplifier for track counter.  
Capable of 4 times speed operation.  
Weight: 0.17 g (typ.)  
30 pin mini flat package.  
1
2003-01-18  
TA2153FN  
Block Diagram  
36 pF  
10 k9 50 k9  
FEO  
FEN  
15 k9  
15 k9  
SBAD  
TEO  
TEN  
2VRO  
TEB  
SEL  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
15  
14  
13  
12  
11  
10  
9
3 pF  
30 k9  
10 k9  
20 k9  
60 k9  
10 k9  
10 pF  
SEB  
VRO  
20 k9  
20 k9 20 k9  
11 k9  
12 k9  
12 k9  
3 STATE  
DET.  
RFRP  
BTC  
48 k9  
83 k9  
20 k9  
100 9  
SW1  
2.9 k9  
1 k9  
SW2  
RFCT  
PKC  
LDO  
MDI  
SW3  
1.4 k9  
238 k9  
15 pF  
8
11 k9  
13 k9  
2.26 k9  
I (1/4)  
BOTTOM  
PEAK  
I-I  
RFRPIN  
RFGO  
GVSW  
AGCIN  
RFO  
TNI  
7
238 k9  
I (3/4)  
I (1/4)  
15 pF  
TPI  
6
I-I  
I (3/4)  
150 k9  
90 k9  
60 k9  
20 k9  
60 k9  
40 pF  
FPI  
5
1 k9  
1 k9  
AGC Amp.  
FNI  
4
GMAD  
RFGC  
3
GND  
2
RFN2  
V
1
CC  
LDC  
SW2  
GVSW  
GND  
HiZ  
Mode  
SEB  
GND  
HiZ  
Bottom Detect  
Peak Detect  
RFRP Detect  
Frequency  
SEL  
CD-RW  
ON  
ON  
ON  
ON  
ON  
SW1  
ON  
SW3  
OFF  
ON  
GND  
HiZ  
OFF  
ON  
Low  
Low  
High  
Normal  
OFF  
OFF  
V
V
OFF  
CC  
CC  
V
ON  
ON  
CC  
2
2003-01-18  
TA2153FN  
Pin Function  
Pin No.  
1
Symbol  
I/O  
Function Description  
Power supply input terminal.  
Remarks  
V
¾
¾
CC  
RF amplitude adjustment control signal input terminal.  
Controlled by 3-PWM signals.  
(PWM carrier = 88.2 kHz)  
3 signals input.  
(2VRO, VRO, GND)  
2
3
4
RFGC  
GMAD  
FNI  
I
I
I
Open loop gain adjustment terminal for AGC amp.  
Main beam I-V amp input terminal.  
(Note1)  
Connected to pin diode  
output B + D  
(through resistor).  
Connected to pin diode  
output A + C  
5
FPI  
I
Main beam I-V amp input terminal.  
(through resistor).  
Connected to pin diode  
output F.  
6
7
8
9
TPI  
TNI  
I
I
Sub beam I-V amp input terminal.  
Sub beam I-V amp input terminal.  
Monitor photo diode amp input terminal.  
Laser diode amp input terminal.  
Connected to pin diode  
output E.  
Connected to monitor photo  
diode.  
MDI  
LDO  
I
Connected to laser diode  
control circuit.  
O
Laser diode control signal input terminal and APC circuit  
ON/OFF control signal terminal.  
SEL  
Level  
APC  
Circuit  
Detect  
Frequency  
LDO  
3 signals input.  
(V , HiZ, GND)  
CC  
Connected to V  
10  
11  
SEL  
I
CC  
GND  
HiZ  
OFF  
Low  
through resister (1 kW)  
Control signal output  
Control signal output  
ON  
ON  
Low  
V
High  
CC  
Tracking error balance adjustment signal input terminal.  
Controlled by 3-PWM signal.  
(PWM carrier = 88.2 kHz)  
3 signals input.  
(2VRO, VRO, GND)  
TEB  
I
Reference voltage (2VRO) output terminal.  
12  
13  
2VRO  
TEN  
O
I
¾
2VRO = 4.2 V when V  
= 5 V  
CC  
Connected to TEO through  
feedback resistor.  
TE amp negative input terminal.  
14  
15  
16  
TEO  
SBAD  
FEO  
O
O
O
TE error signal output terminal.  
¾
¾
¾
Sub beam adder signal output terminal.  
Focus error signal output terminal.  
Connected to FEO through  
feedback resistor.  
17  
FEN  
I
FE amp negative input terminal.  
RFRP output circuit switching terminal.  
Bottom  
Detection Detection  
Peak  
SEB Level  
18  
SEB  
I
Low (GND) is for normal use.  
GND  
ON  
ON  
ON  
V
OFF  
CC  
Reference signal (VRO) output terminal.  
VRO = 2.1 V when V = 5 V  
19  
VRO  
O
¾
CC  
20  
21  
RFRP  
BTC  
O
I
Track count signal output terminal.  
¾
Time constant adjustment terminal for bottom detection.  
Adjusted by capacitance.  
3
2003-01-18  
                                                        
                                                        
TA2153FN  
Pin No.  
Symbol  
I/O  
Function Description  
Remarks  
22  
23  
24  
25  
RFCT  
PKC  
O
I
RFRP signal center level output terminal.  
¾
Time constant adjustment terminal for peak detection.  
Input terminal for track count signal output amp.  
Output terminal for RF signal amplitude adjustment amp.  
Amp (AGC, FE, TE) gain switching terminal.  
Adjusted by capacitance.  
RFRPIN  
RFGO  
I
¾
¾
O
GVSW  
Mode  
Low (GND) is for 5 times  
gain.  
26  
27  
GVSW  
AGCIN  
I
I
GND  
HiZ  
CD-RW  
Normal  
Normal  
V
CC  
Connected to RFO through  
capacitance.  
Input terminal for RF signal amplitude adjustment amp.  
28  
29  
RFO  
GND  
O
Output terminal for RF signal amp.  
Ground terminal.  
¾
¾
¾
Connected to pin-diode  
output A + B + C + D  
(through resistor).  
30  
RFN2  
I
Input terminal for RF signal amp.  
Note 1: Pin3 (GMAD) is gm adjustment terminal for AGC amp by applying a voltage (between 1.5 V and 4.2 V).  
If pin3 (GMAD) is open, voltage of this terminal is fixed VR by IC interior.  
Characteristic of frequency (open-loop characteristic) and voltage is as below.  
GMAD Terminal Voltage  
V
CC  
1.5 V  
4.2 V  
Gain  
GMAD 3  
(Note2)  
VR  
VR  
Frequency  
By changing a voltage (pin3) between 1.5 V and 4.2 V,  
frequency band width is changed.  
Note 2: Current is changed by pin3 (GMAD) voltage.  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Power supply voltage  
Symbol  
Rating  
Unit  
V
8
V
CC  
Power dissipation  
P
500  
mW  
D
Operating temperature  
Storage temperature  
T
-40~85  
°C  
°C  
opr  
T
-55~150  
stg  
4
2003-01-18  
                                                                                                                    
                                                                                                                    
                                                                                                                                   
                                                                                                                                   
TA2153FN  
Electrical Characteristics (unless otherwise specified, V = 5 V, Ta = 25°C)  
CC  
Test  
Circuit  
Characteristics  
Symbol  
Test Condition  
Min  
4.5  
Typ.  
5.0  
Max  
5.5  
Unit  
V
Assured power supply  
voltage  
V
¾
¾
CC  
Power  
supply  
Power supply current  
Reference voltage  
Output current  
I
¾
¾
¾
¾
¾
¾
¾
¾
SEL = HiZ  
26  
4.0  
2.0  
0.1  
2.0  
-3.0  
5.0  
5.0  
35  
4.2  
¾
¾
2.1  
0
44  
4.4  
¾
mA  
V
CC  
2VR  
¾
Reference  
voltage  
(2VRO)  
I
DV = -0.2 V  
DV = +0.1 V  
OH2  
mA  
Input current  
I
¾
OL2  
Reference voltage  
Reference voltage limit  
Output current  
VR  
¾
2.2  
3.0  
¾
V
Reference  
voltage  
(VRO)  
DVR  
2 ´ VR/2VR - 1  
DV = -0.2 V  
%
I
¾
¾
OH1  
mA  
Input current  
I
DV = +0.1 V  
¾
OL1  
fc  
-3dB point, R = 6 kW  
Between RFO - RFN2: 33 kW  
IN  
Frequency band width  
Output slew rate  
¾
¾
¾
¾
8
¾
¾
MHz  
C
RFO  
= 20 pF, R = 6 kW  
IN  
SR  
22  
V/ms  
Between RFO - RFN2: 33 kW  
VR Reference  
Output offset voltage  
V
¾
Between RFO - RFN2: 33 kW  
Input: VR short  
¾
-100  
¾
mV  
OS  
RF1  
Upper limit output voltage  
Lower limit output voltage  
V
¾
¾
GND Reference  
GND Reference  
3.8  
¾
¾
¾
OH  
V
V
¾
0.9  
OL  
LM  
Permissive load  
resistance  
R
¾
¾
¾
¾
¾
¾
¾
10  
0.6  
1.3  
2.7  
5.8  
¾
¾
0.7  
1.5  
3.2  
6.8  
12  
¾
0.8  
1.7  
3.6  
7.7  
¾
kW  
Lower limit voltage gain 1  
(normal mode)  
f = 1 MHz, RFGC = 0.6 V,  
Gv1L  
Gv1H  
Gv2L  
Gv2H  
fc1  
GVSW = V , GMAD = VR  
CC  
Upper limit voltage gain 1  
(normal mode)  
f = 1 MHz, RFGC = 3.6 V,  
GVSW = V , GMAD = VR  
CC  
V/V  
Lower limit voltage gain 2  
(CD-RW mode)  
f = 1 MHz, RFGC = 0.6 V,  
GVSW = GND, GMAD = VR  
Upper limit voltage gain 2  
(CD-RW mode)  
f = 1 MHz, RFGC = 3.6 V,  
GVSW = GND, GMAD = VR  
Frequency band width  
(normal mode)  
-0.5dB point, RFGC = 2.1 V,  
GVSW = V , GMAD = VR  
CC  
MHz  
V/ms  
mV  
RF2  
(AGC)  
Frequency band width  
(CD-RW mode)  
-0.5dB point, RFGC = 2.1 V,  
GVSW = GND, GMAD = VR  
fc2  
SR  
¾
¾
¾
¾
¾
¾
12  
40  
¾
¾
¾
Output slew rate  
C
RFGO  
= 20 pF  
Output offset voltage 1  
(normal mode)  
V
V
GVSW = V  
-100  
OS1  
OS2  
CC  
VR Reference  
GMAD = VR  
Input: Open  
Output offset voltage 2  
(CD-RW mode)  
¾
GVSW = GND  
¾
0
¾
Upper limit output voltage  
Lower limit output voltage  
V
¾
¾
GND Reference  
GND Reference  
3.7  
¾
¾
¾
OH  
V
V
¾
0.9  
OL  
LM  
Permissive load  
resistance  
R
¾
¾
10  
¾
¾
kW  
Voltage gain  
Gv  
¾
¾
¾
¾
f = 1 kHz  
= 3.5 V  
DC  
¾
200  
178  
¾
¾
192  
¾
V/V  
mV  
V
Operation ref. Voltage  
LD off voltage  
V
V
170  
MDI  
LDO  
APC  
V
SEL = GND, V  
MDI = 178 mV  
Reference  
CC  
-0.7  
-200  
LDOP  
Input bias current  
I
¾
200  
nA  
I
5
2003-01-18  
TA2153FN  
Test  
Circuit  
Characteristics  
Symbol  
Gv1  
Test Condition  
GVSW = V  
Min  
4.3  
Typ.  
4.8  
Max  
5.3  
Unit  
Voltage gain 1  
(normal mode)  
¾
¾
¾
CC  
f = 1 kHz  
R
R
= 91 kW  
V/V  
NF  
FI  
Voltage gain 2  
(CD-RW mode)  
= 47 kW  
Gv2  
GVSW = GND 19.3  
GVSW = V -1.0  
21.6  
¾
23.9  
1.0  
Gain balance 1  
(normal mode)  
GB1  
CC  
f = 1 kHz  
R
R
= 91 kW  
dB  
kHz  
mV  
NF  
FI  
Gain balance 2  
(CD-RW mode)  
= 47 kW  
GB2  
fc  
¾
¾
¾
GVSW = GND -1.0  
¾
26.5  
¾
1.0  
¾
Frequency band width  
-3dB point  
¾
FE  
Output offset voltage 1  
(normal mode)  
R
R
= 91 kW  
= 47 kW  
V
V
NF  
FI  
GVSW = V  
-20  
20  
OS1  
OS2  
CC  
VR Reference  
Input: VR short  
Output offset voltage 2  
(CD-RW mode)  
¾
GVSW = GND -50  
¾
50  
Upper limit output voltage  
Lower limit output voltage  
V
¾
¾
GND Reference  
GND Reference  
3.8  
¾
¾
¾
OH  
V
V
¾
0.5  
OL  
LM  
Permissive load  
resistance  
R
¾
¾
¾
¾
10  
¾
12.3  
56  
¾
13.5  
60  
kW  
Voltage gain 1  
(normal mode)  
Gv1  
Gv2  
GVSW = V  
10.9  
50  
CC  
f = 1 kHz  
R
R
= 100 KW  
= 47 kW  
V/V  
%
FN  
TI  
Voltage gain 2  
(CD-RW mode)  
GVSW = GND  
TEB = GND  
TEB = 2VR  
max voltage  
Voltage  
ratio  
40  
45  
50  
T
input  
NI  
gain  
DGv  
¾
TEB = VR  
Reference  
adjustable  
min voltage  
range  
-50  
-45  
¾
-40  
1.0  
1.0  
¾
ratio  
Gain balance 1  
(normal mode)  
f = 1 kHz  
GB1  
GB2  
fc  
¾
¾
¾
¾
¾
GVSW = V  
-1.0  
CC  
R
R
= 100 kW  
= 47 kW  
NF  
FI  
dB  
kHz  
mV  
Gain balance 2  
(CD-RW mode)  
GVSW = GND -1.0  
¾
TEB = VR  
TE  
Frequency characteristic  
cut-off frequency  
RNF = 100 kW  
-3dB point  
¾
44  
¾
Output offset voltage  
(normal mode)  
R
R
= 100 kW  
= 47 kW  
V
NF  
FI  
GVSW = V  
-80  
80  
OS1  
OS2  
CC  
VR Reference  
Input: VR short  
Output offset voltage  
(CD-RW mode)  
V
GVSW = GND -300  
¾
300  
Upper limit output voltage  
Lower limit output voltage  
V
¾
¾
GND Reference  
GND Reference  
3.8  
¾
¾
¾
OH  
V
V
¾
0.5  
OL  
LM  
Permissive load  
resistance  
R
¾
¾
¾
10  
¾
¾
kW  
Voltage gain 1  
(normal mode)  
Gv1  
GVSW = V  
2.0  
2.7  
3.4  
CC  
f = 1 kHz  
= 47 kW  
R
TI  
V/V  
kHz  
V
Voltage Gain 2  
(CD-RW mode)  
TEB = VR  
Gv2  
fc  
¾
¾
¾
GVSW = GND  
9.0  
12.2  
44  
15.3  
Frequency Band Width  
-3dB point  
VR Reference  
¾
¾
Operation reference  
voltage 1 (normal mode)  
V
GVSW = V  
-1.15 -1.05 -0.95  
OPR1  
OPR2  
CC  
SBAD  
R
TI  
= 47 kW  
Operation reference  
voltage 2 (CD-RW mode)  
Input: VR short  
V
¾
GVSW = GND -1.0  
-0.9  
-0.8  
Upper limit output voltage  
Lower limit output voltage  
V
¾
¾
GND Reference  
GND Reference  
3.8  
¾
¾
¾
OH  
V
V
¾
1.3  
OL  
LM  
Permissive load  
resistance  
R
¾
¾
10  
¾
¾
kW  
6
2003-01-18  
TA2153FN  
Test  
Circuit  
Characteristics  
Voltage gain  
Symbol  
Gv  
Test Condition  
Min  
¾
Typ.  
1.7  
Max  
¾
Unit  
V/V  
¾
¾
Detection frequency  
characteristic 1  
fc1  
¾
SEL = HiZ  
SEL = V  
¾
100  
¾
kHz  
Detection frequency  
characteristic 2  
fc2  
¾
¾
¾
¾
¾
¾
-1.1  
0.7  
10  
200  
-1.0  
0.8  
¾
¾
-0.9  
0.9  
¾
CC  
RFRP  
Operation reference  
voltage 1  
VR Reference  
No Input  
V
V
OPR1  
OPR2  
V
Operation reference  
voltage 2  
VR Reference  
700 kHz, 1.2 Vp-p  
Permissive load  
resistance  
R
LM  
¾
kW  
Detection frequency  
characteristic 1  
fc1  
fc2  
C
C
= 0.22 mF  
= 0.22 mF  
¾
70  
¾
RFCT  
BTC  
Hz  
Detection frequency  
characteristic 2  
RFRP ®  
¾
¾
¾
70  
¾
PKC  
RFCT  
Output offset voltage  
V
RFRP Reference, RFCT  
-50  
¾
50  
mV  
OS  
Note:  
If the IC is used abnormally (ex. wrongly mounted), it may be damaged or destroyed.  
7
2003-01-18  
TA2153FN  
Package Dimensions  
Weight: 0.17 g (typ.)  
8
2003-01-18  
TA2153FN  
RESTRICTIONS ON PRODUCT USE  
000707EBA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The products described in this document are subject to the foreign exchange and foreign trade laws.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
9
2003-01-18  

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