TA8225LQ [TOSHIBA]

45W BTL Audio Amplifier; 45W BTL音频放大器
TA8225LQ
型号: TA8225LQ
厂家: TOSHIBA    TOSHIBA
描述:

45W BTL Audio Amplifier
45W BTL音频放大器

消费电路 商用集成电路 音频放大器 视频放大器 局域网
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中文:  中文翻译
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TA8225HQ/LQ  
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic  
TA8225HQ,TA8225LQ  
45W BTL Audio Amplifier  
TA8225HQ  
TA8225LQ  
Weight  
The TA8225HQ, TA8225LQ is BTL audio power amplifier for  
consumer application.  
It is designed for high power, low distortion and low noise.  
It contains various kind of protectors and the function of  
standby SW.  
In addition, the functions of output short or over voltage  
detection and junction temperature are involved.  
Features  
High power  
: P  
(V  
CC  
= 45W (typ.)  
OUT (1)  
= 14.4V, f = 1kHz, THD = 10%, R = 2)  
L
: P  
(V  
CC  
= 40W (typ.)  
= 13.2V, f = 1kHz, THD = 10%, R = 2)  
OUT (2)  
L
: P  
(V  
CC  
= 24W (typ.)  
= 13.2V, f = 1kHz, THD = 10%, R = 4)  
OUT (3)  
L
Low thermal resistance  
: θ = 1.5°C / W (infinite heat sink)  
jc  
HZIP17P2.00: 9.8g (typ.)  
HSIP17P2.00: 9.8g (typ.)  
Excellent output power band width  
: P  
(V  
CC  
= 18W (typ.)  
= 13.2V, f = 50Hz~20kHz, THD = 1%, R = 4)  
OUT (4)  
L
Low distortion ratio  
: THD = 0.015% (typ.)  
(V  
CC  
= 13.2V, f = 1kHz, P = 4W, R = 4)  
OUT L  
Builtin standby function (with pin(1) set at high, power is turned on)  
Builtin output short or over voltage detection circuit, output to V  
and output to GND short.  
CC  
(Pin(8): Open collector)  
Builtin junction temperature detection circuit. (Pin(2): Open collector)  
Builtin various protection circuits  
Thermal shut down, Over voltage  
Output to GND short  
Output to V  
short  
CC  
Output to Output short  
Operating supply voltage: V  
= 9~18V  
CC (opr)  
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Block Diagram  
TA8225HQ/LQ (G = 40dB)  
V
Caution For Use And Method Of Application  
1. Voltage gain adjustment  
Voltage gain G of this IC is decided by the external feedback resistors R and R .  
f1 f2  
V
Gain fluctuation by temperature can be made smaller than they are housed in IC.  
Voltage gain G is decided by the following expression:  
V
R
+ R  
f2  
f1  
If R = 20kR > R  
f1  
G 20og  
V
+ 6 (dB)  
0
f2  
R
f2  
(R // R ) + R  
0
f1  
f2  
f2  
If R = 20k> R > R  
f1 f2  
G 20og  
V
+ 6 (dB)  
0
R
If R and R are made small, the following problems may be caused:  
f1 f2  
(1) When output short is released, output DC voltage is not restored.  
(2) Fluctuation of output DC voltage by current I in (Fig.1).  
If voltage gain is made small excessively, oscillation may be taken place and therefore, this IC shall be used at  
= 34dB or above.  
G
V
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2. Preventive measure against oscillation  
For preventing the oscillation, it is advisable to use C , the condenser of polyester film having small  
4
characteristic fluctuation of the temperature and the frequency.  
The condenser (C ) between input and GND is effective for preventing oscillacion which is generated with  
6
feedback signal from an output stage.  
The resistance R to be series applied to C is effective for phase correction of high frequency, and improves the  
4
oscillation allowance.  
Since the oscillation allowance is varied according to the causes described below, perform the temperature test  
to check the oscillation allowance.  
(1) Voltage gain to be used (G setting)  
V
(3) Kind of condenser  
(2) Capacity value of condenser  
(4) Layout of printed board  
In case of its use with the voltage gain G reduced or with the feedback amount increased, care must be taken  
V
because the phaseinversion is caused by the high frequency resulting in making the oscillation liable  
generated.  
3. Pop noise  
A pop noise generated when the power source is turned on  
depends on rise times of the inphase side output ((11)pin) and  
the negativephase side output ((16)pin), that is, output offset  
voltage.  
The following two points may be pointed out as causes for  
generation the output offset voltage:  
(1) Inphase and negativephase NF capacitor charging times  
(2) Input offset voltage  
Especially, the factor (2) relates to the pop noise level.  
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(1) Inphase and negative phase NF capacitor charging time  
In (Fig.2), when the power source is turned on, Q and Q are turned on, and NF capacitors are charged in  
1
2
the route of V Q RbootC outR C . For instance, if the capacity of an inphase capacitor  
CC BS NF  
2
0
is not properly paired with that a negativephase capacitor, output offset voltage = pop noise is produced  
because a charging time of NF capacitor differs between the inphase and negativephase outputs.  
Therefore, to suppress the pop noise it is necessary to properly pair the inphase and negativephase NF  
capacitors. Output and NF DC voltage waveforms by the pairing of NF capacitors: C  
and (Fig.4).  
are shown in (Fig.3)  
NF  
Further, voltage waveforms are shown when the power source was turned on, under the following conditions:  
V
= 13.2V, R = 4, Ta = 25°C, and input shotcircuit.  
CC  
L
Output DC voltage V  
: (2V / div, 200ms / div)  
OUT  
NF DC voltage V : (1V / div, 200ms / div)  
NF  
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(2) Input offset voltage  
Input offset voltage is increased by as many times as a gain and appears as output offset voltage.  
Input offset voltage is affected by an external resistor in addition to properness of pair of capacitor in IC.  
An example of a general application circuit is shown in (Fig.5). In this case, input to the differential amplifier  
composing the buffer amplifier is decided to be 30k+ 1.1k= 31.1kat the in (+) side and 1.1k at the in ()  
side. Therefore a rising difference of about 30 times between the in (+) side and the in () side.  
So, to fit input offset voltages, it is possible to suppress the input offset voltage by adjusting it to 31.1kboth  
at the in (+) and in () sides according to the application example shown in (Fig.6). As input coupling  
capacitors are used in actual set, the circuit shown in (Fig.7) is considered. In this case, it is necessary to  
take the utmost care of proper pair of C (+) and C ().  
IN IN  
Pop noise level affected by input offset voltage shall be checked on an actually mounted set.  
4. Junction temperature detecting pin(2)  
Using temperature characteristic of a band gap circuit and in proportion to junction temperature, pin(2) DC  
voltage: V rises at about ±10mV / °C temperature characteristic. So, the relation between V at T = 25°C and  
2
2
j
V χ at T =χ°C is decided by the following expression:  
2
j
V χ − V (25°C)  
10mV / °C  
2
2
T (χ°C) =  
+ 25(°C)  
j
In deciding a heat sink suze, a junction temperature can be  
easily made clear by measuring voltage at this pin while a  
backside temperature of IC was so far measured using a  
thermocouple type thermometer.  
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5. OutputV  
short, outputGND short and over voltage detecting pin(8)  
CC  
In case of such abnormalities as outputV  
short, outputGND short, overvoltage (Fig.9), it is possible to  
CC  
inform the abnormal state to the outside by turning a NPN transistor is turned on.  
It is possible to improve the reliability of not only power IC but also an entire equipment by (1) display by LED  
and LCD and (2) by turning the power supply relay off.  
6. Standby SW function  
By means of controlling pin(1) (standby terminal) to high and low, the power supply can be set to on and off.  
The threshold voltage of pin(1) is set at about 3V 2.1V (typ.), and the power supply current is about 1µA  
BE  
(typ.) at the standby state.  
Control voltage of (1)pin: V  
(SB)  
StandBy  
Power  
V
(V)  
(SB)  
On  
Off  
Off  
On  
0~2  
3~V  
CC  
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<Caution>  
Must be set the control voltage value less than V  
when the standby terminal (pin(1)) is applied. In this  
CC  
case, we recommended the series connecting resistance for current limit: R  
STBY  
(100k~1kto pin(1).)  
Absolute Maximum Ratings  
(Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Peak supply voltage (0.2s)  
DC supply voltage  
V
50  
25  
V
V
CC (surge)  
V
CC (DC)  
CC (opr)  
O (peak)  
Operating supply voltage  
Output current (peak)  
Power dissipation  
V
18  
V
I
9
A
P
50  
W
°C  
°C  
D
Operating temperature  
Storage temperature  
T
opr  
30~85  
55~150  
T
stg  
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Electrical Characteristics  
(unless otherwise specified, V = 13.2V, R = 4, R = 600, f = 1kHz, Ta = 25°C)  
CC  
L
g
Test  
Cir−  
cuit  
Characteristic  
Quiescent current  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
I
V
V
= 0  
150  
45  
250  
mA  
W
CCQ  
IN  
= 14.4V, THD = 10%,  
CC  
= 2  
P
OUT (1)  
R
L
P
P
THD = 10%, R = 2Ω  
33  
20  
40  
24  
W
W
OUT (2)  
OUT (3)  
L
Output power  
THD = 10%  
THD = 1%,  
f = 50Hz~20kHz  
P
18  
W
OUT (4)  
THD  
Total harmonic distortion  
Voltage gain  
P
V
= 4W  
0.015  
40  
0.07  
41.5  
%
OUT  
G
= 10mV  
rms  
38.5  
dB  
V
IN  
R
= 0, DIN45405  
g
V
50  
0.26  
0.23  
60  
0.5  
mV  
NO (1)  
NO (2)  
rms  
rms  
Noise filter  
Output noise voltage  
V
R
g
= 0, BW = 20Hz~20kHz  
mV  
f = 100Hz,  
Ripple rejection ratio  
R.R.  
dB  
V
= 0.775V  
(0dBm)  
ripple  
rms  
Output offset voltage  
V
V = 0  
IN  
100  
0
1
100  
30  
mV  
µA  
offset  
Current at standby state  
I
SB  
Test Circuit  
TA8225HQ/LQ (G = 40dB)  
V
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11  
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Package Dimensions  
Weight: 9.8g (typ.)  
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Package Dimensions  
Weight: 9.8g (typ.)  
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Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over  
current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute  
maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or  
load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the  
effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time  
and insertion circuit location, are required.  
If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to  
prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or  
the negative current resulting from the back electromotive force at power OFF. For details on how to connect a  
protection circuit such as a current limiting resistor or back electromotive force adsorption diode, refer to individual  
IC datasheets or the IC databook. IC breakdown may cause injury, smoke or ignition.  
Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection  
function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition.  
Carefully select external components (such as inputs and negative feedback capacitors) and load components  
(such as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as  
input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to  
a speaker with low input withstand voltage, overcurrent or IC failure can cause smoke or ignition. (The over  
current can cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied  
Load (BTL) connection type IC that inputs output DC voltage to a speaker directly.  
Over current Protection Circuit  
Over current protection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all  
circumstances. If the Over current protection circuits operate against the over current, clear the over current status  
immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum  
ratings can cause the over current protection circuit to not operate properly or IC breakdown before operation. In  
addition, depending on the method of use and usage conditions, if over current continues to flow for a long time  
after operation, the IC may generate heat resulting in breakdown.  
Thermal Shutdown Circuit  
Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the Thermal shutdown circuits  
operate against the over temperature, clear the heat generation status immediately. Depending on the method of  
use and usage conditions, such as exceeding absolute maximum ratings can cause the thermal shutdown circuit  
to not operate properly or IC breakdown before operation.  
Heat Radiation Design  
When using an IC with large current flow such as power amp, regulator or driver, please design the device so that  
heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at any time and condition.  
These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in  
IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into  
considerate the effect of IC heat radiation with peripheral components.  
Installation to Heat Sink  
Please install the power IC to the heat sink not to apply excessive mechanical stress to the IC. Excessive  
mechanical stress can lead to package cracks, resulting in a reduction in reliability or breakdown of internal IC  
chip. In addition, depending on the IC, the use of silicon rubber may be prohibited. Check whether the use of  
silicon rubber is prohibited for the IC you intend to use, or not. For details of power IC heat radiation design and  
heat sink installation, refer to individual technical datasheets or IC databooks.  
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RESTRICTIONS ON PRODUCT USE  
060116EBF  
The information contained herein is subject to change without notice. 021023_D  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc. 021023_A  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk. 021023_B  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others. 021023_C  
The products described in this document are subject to the foreign exchange and foreign trade laws. 021023_E  
This product generates heat during normal operation. However, substandard performance or malfunction may  
cause the product and its peripherals to reach abnormally high temperatures.  
The product is often the final stage (the external output stage) of a circuit. Substandard performance or  
malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the  
product. 030619_R  
About solderability, following conditions were confirmed  
Solderability  
(1) Use of Sn-37Pb solder Bath  
· solder bath temperature = 230°C  
· dipping time = 5 seconds  
· the number of times = once  
· use of R-type flux  
(2) Use of Sn-3.0Ag-0.5Cu solder Bath  
· solder bath temperature = 245°C  
· dipping time = 5 seconds  
· the number of times = once  
· use of R-type flux  
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