TA8272H [TOSHIBA]
Max Power 43 W BTL x 4 ch Audio Power IC; 最大功率43 W¯¯ BTL ×4通道音频功率IC
| 型号： | TA8272H |
| 厂家： | 
TOSHIBA |
| 描述： | Max Power 43 W BTL x 4 ch Audio Power IC |
| 文件： | 总13页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TA8272H
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA8272H
Max Power 43 W BTL × 4 ch Audio Power IC
The TA8272H is 4 ch BTL audio power amplifier for car audio
application.
This IC can generate more high power: P
MAX = 43 W as it
OUT
is included the pure complementary PNP and NPN transistor
output stage.
It is designed low distortion ratio for 4 ch BTL audio power
amplifier, built-in stand-by function, muting function, and
diagnosis circuit which can detect output to V /GND short,
CC
output offset voltage and over voltage input mode.
Additionally, the AUX amplifier and various kind of protector
for car audio use is built-in.
Weight: 7.7 g (typ.)
Features
·
High power: P
MAX (1) = 43 W (typ.)
OUT
CC
(V
= 14.4 V, f = 1 kHz, JEITA max, R = 4 Ω)
L
: P
: P
: P
MAX (2) = 40 W (typ.)
= 13.7 V, f = 1 kHz, JEITA max, R = 4 Ω)
(1) = 28 W (typ.)
= 14.4 V, f = 1 kHz, THD = 10%, R = 4 Ω)
(2) = 24 W (typ.)
= 13.2 V, f = 1 kHz, THD = 10%, R = 4 Ω)
OUT
(V
CC
L
OUT
(V
CC
L
OUT
(V
CC
L
·
·
Built-in diagnosis circuit (pin 25)
Low distortion ratio: THD = 0.02% (typ.)
(V
CC
= 13.2 V, f = 1 kHz, P = 5 W, R = 4 Ω)
OUT L
·
Low noise: V
NO
= 0.10 mVrms (typ.)
= 13.2 V, R = 0 Ω, G = 26dB, BW = 20 Hz~20 kHz)
Built-in stand-by switch function (pin 4)
(V
CC
g
V
·
·
·
·
Built-in muting function (pin 22)
Built-in AUX amplifier from single input to 4 channels output (pin 16)
Built-in various protection circuit
:
Thermal shut down, over voltage, out to GND, out to V , out to out short
CC
·
Operating supply voltage: V
= 9~18 V
CC (opr)
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2002-06-20
TA8272H
Block Diagram
1
20
6
TAB
V
V
CC2
CC1
OUT1 (+)
9
8
7
IN1
IN2
11
12
PW-GND1
R
R
L
C
C
1
OUT1 (-)
OUT2 (+)
5
2
3
PW-GND2
L
1
OUT2 (-)
AUX IN
16
15
C
C
6
OUT3 (+)
17
18
19
IN3
IN4
PW-GND3
R
R
L
1
OUT3 (-)
OUT4 (+)
21
24
23
14
13
PW-GND4
L
C
1
OUT4 (-)
PRE-GND
DIAGNOSIS
OUT
RIP
10
STBY
MUTE
22
4
25
: PRE-GND
: PW-GND
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2002-06-20
TA8272H
Caution and Application Method
(Description is made only on the single channel.)
1. Voltage Gain Adjustment
This IC has no NF (negative feedback) terminals. Therefore, the voltage gain can’t adjusted, but it makes
the device a space and total costs saver.
Amp. 2A
Amp. 1
Input
Amp. 2B
Figure 1 Block Diagram
The voltage gain of Amp.1:
G
G
= 0 dB
V1
V2
The voltage gain of Amp.2A, B:
= 20 dB
The voltage gain of BLT Connection: G
= 6 dB
V (BTL)
Therefore, the total voltage gain is decided by expression below.
= G + G + G = 0 + 20 + 6 = 26 dB
G
V
V1 V2 V (BTL)
2. Stand-by SW Function (pin 4)
By means of controlling pin 4 (stand-by terminal)
to high and low, the power supply can be set to ON
and OFF. The threshold voltage of pin 4 is set at
V
CC
ON
Power
10 kW
4
about 3V
BE
(typ.), and the power supply current is
OFF
» 2V
BE
about 2 mA (typ.) at the stand-by state.
to BIAS
CUTTING CIRCUIT
Control Voltage of pin 4: V
SB
Stand-by
Power
V
(V)
SB
ON
OFF
ON
0~1.5
OFF
3~V
CC
Figure 2 With pin 4 set to High,
Power is turned ON
Adjustage of Stand-by SW
(1) Since V
CC
can directly be controlled to ON or OFF by the microcomputer, the switching relay can be
omitted.
(2) Since the control current is microscopic, the switching relay of small current capacity is satisfactory
for switching
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TA8272H
RELAY
Large current capacity switch
BATTERY
BATTERY
FROM
MICROCOMPUTER
V
V
CC
CC
– Conventional Method –
DIRECTLY FROM
MICROCOMPUTER
Small current capacity switch
BATTERY
BATTERY
Stand-By
V
Stand-By V
CC
CC
– Stand-by Switch Method –
Figure 3
3. Muting Function (pin 22)
The muting time constant is decided by R and C and these parts is related the pop noise at power
1
4
ON/OFF.
The series resistance; R must be set up less than 10 kW.
1
The muting function have to be controlled by a transistor, FET and m-COM port which has I
mA ability.
> 250
MUTE
Terminal 22 must not be pulled up and it shall be controlled by OPEN/LOW.
ATT – V
MUTE
20
0
10 kW
5 kW
-20
-40
-60
-80
-100
I (100 mA)
A
R
1
I
24
MUTE (OFF)
I
MUTE
V
P
= 13.2 V
CC
V
MUTE
= 10 W
o
R
= 4 W
L
f = 1 kHz
BW = 400 Hz~30 kHz
0
0.4
0.8
1
1.2
1.6
2
2.4
(V)
2.8 3
Point A voltage: V
MUTE
Figure 4 Muting Function
Figure 5 Mute Attenuation - V
(V)
MUTE
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TA8272H
4. AUX Input (pin 16)
20dB AMP.
The pin 16 is for input terminal of AUX
amplifier.
The total gain is 0dB by using of AUX amplifier.
Therefore, the m-COM can directly drive the
AUX amplifier.
IN
OUT (+)
OUT (-)
BEEP sound or voice synthesizer signal can be
input to pin 16 directly.
AUX AMP
When AUX function is not used, this pin must be
connected to PRE-GND (pin 13) via a capacitor.
AUX-IN
16
m-COM
-20dB
Figure 6 AUX Input
5. Diagnosis Output (pin 25)
This diagnosis output terminal of pin 25 has open collector output structure on chip as shown in Figure 7.
In case diagnosis circuit that detect unusual case is operated, NPN transistor (Q1) or (Q2) is turned on.
It is possible to protect all the system of apparatus as well as power IC protection.
In case of being unused this function, use this IC as open-connection on pin 25.
5 V
25
OUTPUT OFFSET
VOLTAGE
Q2
5 V
DETECTOR
OUTPUT SHORT
PROTECTOR
Q1
GND
t
OVER VOLTAGE
PROTECTOR
Q1 is turned on
Q2 is turned on
pin 25: Open collector output (active low)
Figure 7 Self Diagnosis Output
5.1 In Case of Shorting Output to V /GND or Over Voltage Power Supplied
CC
NPN transistor (Q1) is turned on.
Threshold of over voltage protection: V
= 22 V (typ.)
CC
5 V
LED/LCD (Flashing)
m-COM
25
ALARM (Announcement from a speaker.)
(Relay → OFF)
REGULATOR → OFF
MEMORY
(Count and record)
Figure 8 Application 1
5.2 In Case of Shorting Output to Output
NPN transistor (Q1) is turned on and off in response to the input signal voltage.
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2002-06-20
TA8272H
5.3 In Case of Appearing Output Offset Voltage by Generating a Large Leakage Current on
the Input Capacitor etc.
NPN transistor (Q2) is turned on while the inverted output voltage level become less than the
threshold level of output offset voltage detector.
V
DC voltage of (+) Amp (at leak)
(normal DC voltage)
V
CC/2
Leak or short
V
ref
DC voltage of (-) Amp (at leak)
t
Offset voltage (at leak)
Elec. Vol.
5 V
V
V
bias
ref/2
L.P.F.
To CPU
25
A
B
*: It is possible to detect the abnormal output offset which is appeared by the large leakage of the input capacitor at
> V (about 1.4 V)
V
ref/2
bias
Figure 9 Application and Detection Mechanism
(-) Amp output
V
CC/2
Threshold level
GND
t
Voltage of point (A)
GND
t
Voltage of point (B)
GND
t
Figure 10 Wave Form
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TA8272H
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Peak supply voltage (0.2 s)
DC supply voltage
V
50
25
V
V
CC (surge)
V
CC (DC)
CC (opr)
O (peak)
Operation supply voltage
Output current (peak)
Power dissipation
V
18
V
I
9
A
P
(Note1)
opr
125
W
°C
°C
D
Operation temperature
Storage temperature
T
-40~85
-55~150
T
stg
Note1: Package thermal resistance q = 1°C/W (typ.)
j-T
(Ta = 25°C, with infinite heat sink)
Electrical Characteristics
(unless otherwise specified V = 13.2 V, f = 1 kHz, R = 4
W, Ta = 25°C)
CC
L
Test
Circuit
Characteristics
Quiescent current
Symbol
Test Condition
Min
Typ.
Max
Unit
mA
I
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
V
V
V
V
= 0
¾
¾
200
43
400
¾
CCQ
IN
P
P
MAX (1)
MAX (2)
= 14.4 V, max Power
= 13.7 V, max Power
= 14.4 V, THD = 10%
OUT
OUT
CC
CC
CC
¾
40
¾
Output power
W
P
P
(1)
(2)
¾
28
¾
OUT
OUT
THD = 10%
22
¾
24
¾
Total harmonic distortion
Voltage gain
THD
P
V
V
= 5 W
0.02
26
0.2
28
%
OUT
OUT
OUT
G
= 0.775 Vrms (0dBm)
= 0.775 Vrms (0dBm)
24
-1.0
¾
V
dB
Voltage gain ratio
DG
0
1.0
¾
V
V
(1)
Rg = 0 W, DIN45405
0.12
0.10
NO
NO
Output noise voltage
mVrms
V
(2)
Rg = 0 W, BW = 20 Hz~20 kHz
¾
0.35
f
V
= 100 Hz, Rg = 620 W
rip
Ripple rejection ratio
Cross talk
R.R.
C.T.
¾
¾
40
50
65
¾
¾
dB
dB
= 0.775 Vrms (0dBm)
rip
Rg = 620 W
V
¾
= 0.775 Vrms (0dBm)
OUT
Output offset voltage
Input resistance
V
¾
¾
¾
¾
¾
¾
¾
¾
¾
-150
¾
0
90
150
¾
mV
kW
mA
OFFSET
R
IN
Stand-by current
I
Stand-by condition
Power: ON
¾
2
10
SB
V
H
L
3.0
0
¾
V
CC
SB
Stand-by control voltage
Mute control voltage
V
V
Power: OFF
Mute: OFF
¾
1.5
SB
V
H
Open
¾
¾
M
(Note2)
V
L
Mute: ON, R = 10 kW
0
0.5
V
M
1
Mute: ON,
Mute attenuation
ATT M
¾
V
= 7.75 Vrms (20dBm) at
80
90
¾
dB
OUT
Mute: OFF.
Note2: Muting function have to be controlled by open and low logic, which logic is a transistor, FET and m-COM port
of IMUTE > 250 mA ability.
This means than the mute control terminal : pin 22 must not be pulled-up.
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2002-06-20
TA8272H
Test Circuit
1
20
6
TAB
V
V
CC2
CC1
OUT1 (+)
9
8
7
0.22 mF
IN1
IN2
11
12
PW-GND1
R
R
L
C
1
OUT1 (-)
OUT2 (+)
5
2
3
0.22 mF
PW-GND2
L
C
1
OUT2 (-)
0.22 mF
AUX IN
16
15
C
6
OUT3 (+)
17
18
19
0.22 mF
IN3
IN4
PW-GND3
R
R
L
C
1
OUT3 (-)
OUT4 (+)
21
24
23
0.22 mF
14
13
PW-GND4
L
C
1
OUT4 (-)
PRE-GND
DIAGNOSIS
OUT
RIP
10
STBY
MUTE
22
4
25
: PRE-GND
: PW-GND
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2002-06-20
TA8272H
T.H.D – P
T.H.D – P
OUT
OUT
100
100
V
= 13.2 V
f = 1 kHz
R = 4 W
L
CC
50
30
50
30
R
= 4 W
L
1 ch drive
1 ch drive
13.2 V
10
10
5
3
5
3
V
CC
= 9.0 V
f = 10 kHz
1
0.5
0.3
0.5
0.3
16.0 V
0.1
0.1
1 kHz
0.05
0.03
0.05
0.03
100 Hz
0.01
0.1
0.01
0.1
0.3 0.5
1
3
5
10
30 50 100
0.3 0.5
1
3
5
10
30 50 100
Output power
P
(W)
Output power
P
(W)
OUT
OUT
I
– V
T.H.D – f
CCQ
CC
400
300
200
100
0
10
V = 13.2 V
CC
R
L
= ¥
R
L
= 4 W
P
OUT
= 5 W
1
0.1
0.01
0
10
Power supply voltage
20
30
10
100
1 k
10 k
100 k
V
(V)
Frequency
f
(Hz)
CC
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2002-06-20
TA8272H
V
– R
R.R. – f
NO
g
300
250
200
150
100
50
0
-10
-20
-30
-40
-50
-60
-70
V
= 13.2 V
CC
= 4 W
V
V
= 13.2 V
CC
R
L
= 0.775 Vrms (0dBm)
= 620 W
rip
BW = ~20 k
R
R
g
= 4 W
L
0
0
0
0
100
1 k
10 k
g
100 k
0
0
0
100
1 k
Frequency
10 k
100 k
Singnal source resistance
R
(9)
f
(Hz)
C.T. – f (OUT1)
C.T. – f (OUT2)
0
-10
-20
-30
-40
-50
-60
-70
0
-10
-20
-30
-40
-50
-60
-70
V
V
= 13.2 V
V
= 13.2 V
CC
CC
= 0.775 Vrms (0dBm)
V
OUT
= 0.775 Vrms (0dBm)
OUT
R
= 620 W
R
= 620 W
g
L
g
L
R
= 4 W
R
= 4 W
OUT1 ® OUT3, 4
OUT1 ® OUT2
OUT2 ® OUT3, 4
OUT1 ® OUT4
OUT1 ® OUT2, 3
OUT2 ® OUT3, 4
OUT2 ® OUT1
100
1 k
Frequency
10 k
100 k
100
1 k
10 k
100 k
f
(Hz)
Frequency
f
(Hz)
C.T. – f (OUT3)
C.T. – f (OUT4)
0
-10
-20
-30
-40
-50
-60
-70
0
-10
-20
-30
-40
-50
-60
-70
V
V
= 13.2 V
V = 13.2 V
CC
CC
= 0.775 Vrms (0dBm)
V
OUT
= 0.775 Vrms (0dBm)
OUT
R
= 620 W
R
= 620 W
g
L
g
L
R
= 4 W
R
= 4 W
OUT4 ® OUT1, 2
OUT3 ® OUT1, 2
OUT3 ® OUT1, 2
OUT3 ® OUT4
OUT3 ® OUT4
OUT4 ® OUT3
100
1 k
10 k
100 k
100
1 k
10 k
100 k
Frequency
f
(Hz)
Frequency
f
(Hz)
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2002-06-20
TA8272H
G
V
– f
P
– P
D OUT
40
35
30
25
20
15
10
5
70
60
16 V
50
40
30
20
10
0
13.2 V
V
= 13.2 V
CC
f = 1 kHz
9 V
R
= 4 W
L
R
L
= 4 W
V
OUT
= 0.775 Vrms (0dBm)
0
0
5
10
15
20
25
0
100
1 k
10 k
100 k
Frequency
f
(Hz)
Output power
P
/ch (C)
OUT
P
MAX – Ta
D
120
100
80
60
40
20
0
① INFINITE HEAT SINK
Rq HS = 1°C/W
② HEAT SINK (RqHS = 3.5°C/W)
Rq HS + RqHC = 4.5°C/W
③ NO HEAT SINK
RqJA = 39°C/W
①
②
③
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
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2002-06-20
TA8272H
Package Dimensions
Weight: 7.7 g (typ.)
12
2002-06-20
TA8272H
RESTRICTIONS ON PRODUCT USE
000707EBF
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· This product generates heat during normal operation. However, substandard performance or malfunction may
cause the product and its peripherals to reach abnormally high temperatures.
The product is often the final stage (the external output stage) of a circuit. Substandard performance or
malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the
product.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
13
2002-06-20
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