TC58NYG0S3HBAI4 [TOSHIBA]
NAND Flash Memory(SLC Middle Capacity); NAND闪存（ SLC中容量）
| 型号： | TC58NYG0S3HBAI4 |
| 厂家： | 
TOSHIBA |
| 描述： | NAND Flash Memory(SLC Middle Capacity) |
| 文件： | 总3页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NAND Flash Memory(SLC Middle Capacity)
Product list of NAND Flash Memory SLC Middle Capacity
Program
/Erase Time
typ.
Access Time
Tech.
Node
nm
Page
Size
bit
Block
Size
bit
Power
Supply
V
Operating
Temperature
°C
Capacity
bit
I/O
Package
Part Number
Serial
1st
Program
Erase
Time
cycle
access
Time
min
ns
typ
µs
μs
ms
0
to
70
TC58NVM9S3ETA00 25
25
300
2.5
TSOP I 48-P-1220-
0.50
2.7
TC58NVM9S3ETAI0 25
TC58NVM9S3EBAI4 25
25
25
300
300
2.5
2.5
to
P-TFBGA63-0911-
0.80CZ
3.6
2048
128K
+4K
512M
43
+64
× 8
x8
-40
to
P-VFBGA67-0608-
0.80-001
× 8
TC58NVM9S3EBAI6 25
TC58NYM9S3EBAI4 25
TC58NYM9S3EBAI6 25
25
25
25
300
300
300
2.5
2.5
2.5
85
P-TFBGA63-0911-
0.80CZ
1.70 to
1.95
P-VFBGA67-0608-
0.80-001
0
to
70
TC58DVG02D5TA00 25
25
300
2.5
TSOP I 48-P-1220-
0.50
2.7
to
TC58DVG02D5TAI0 25
TC58DVG02D5BAI4 25
25
25
300
300
2.5
2.5
P-TFBGA63-0911-
0.80CZ
3.6
2048
128K
+4K
43
+64
× 8
x8
-40
to
P-VFBGA67-0608-
0.80-001
× 8
TC58DVG02D5BAI6 25
TC58DYG02D5BAI4 25
TC58DYG02D5BAI6 25
25
25
25
300
300
300
2.5
2.5
2.5
85
P-TFBGA63-0911-
0.80CZ
1.70 to
1.95
P-VFBGA67-0608-
0.80-001
1G
0
to
70
TC58NVG0S3HTA00 25
25
300
3.5
TSOP I 48-P-1220-
0.50
2.7
to
TC58NVG0S3HTAI0 25
TC58NVG0S3HBAI4 25
25
25
300
300
3.5
3.5
P-TFBGA63-0911-
0.80CZ
3.6
2048
+128
× 8
128K
+8K
× 8
24
x8
-40
to
P-VFBGA67-0608-
0.80-001
TC58NVG0S3HBAI6 25
TC58NYG0S3HBAI4 25
TC58NYG0S3HBAI6 25
25
25
25
300
300
300
3.5
3.5
3.5
85
P-TFBGA63-0911-
0.80CZ
1.70
to
P-VFBGA67-0608-
0.80-001
1.95
0
to
70
TC58NVG1S3ETA00 25
25
300
2.5
TSOP I 48-P-1220-
0.50
2.7
to
2048
128K
3.6
TC58NVG1S3ETAI0 25
TC58NVG1S3EBAI4 25
25
25
300
300
2.5
2.5
43
24
43
+64
× 8
+4K
× 8
x8
x8
x8
-40
to
P-TFBGA63-0911-
0.80CZ
1.70
to
85
TC58NYG1S3EBAI4 25
TC58NVG1S3HTA00 25
25
25
300
300
2.5
3.5
1.95
2G
0
to
70
TSOP I 48-P-1220-
0.50
2.7
to
2048
128K
3.6
TC58NVG1S3HTAI0 25
TC58NVG1S3HBAI6 25
25
25
300
300
3.5
3.5
+128
× 8
+8K
× 8
-40
to
P-VFBGA67-0608-
0.80-001
1.70
to
85
TC58NYG1S3HBAI6 25
TC58NVG2S3ETA00 25
25
30
300
300
3.5
2.5
1.95
0
to
70
TSOP I 48-P-1220-
0.50
2.7
to
2048
128K
3.6
TC58NVG2S3ETAI0 25
TC58NVG2S3EBAI5 25
30
30
300
300
2.5
2.5
+64
× 8
+4K
× 8
-40
to
P-TFBGA63-1013-
0.80AZ
1.70
to
85
TC58NYG2S3EBAI5 25
TC58NVG2S0FTA00 25
30
30
300
300
2.5
3
1.95
4G
0
to
70
TSOP I 48-P-1220-
0.50
2.7
to
4096
+224
x 8
256K
3.6
TC58NVG2S0FTAI0 25
TC58NVG2S0FBAI4 25
30
30
300
300
3
3
32
+14K
x8
-40
to
x 8
P-TFBGA63-0911-
0.80CZ
1.70
to
85
TC58NYG2S0FBAI4 25
30
300
3
1.95
Top of this page
TOSHIBA Top Page
Privacy Policy
Terms and Conditions
Copyright © 1995-2012 TOSHIBA CORPORATION, All Rights Reserved.
[8/16/2012 10:12:53 AM]
相关型号：
TC58NYG1S3EBAI5
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M Ã 8 BIT) CMOS NAND E2PROM
TOSHIBA
©2020 ICPDF网 联系我们和版权申明