TC74HC4066AP_07 [TOSHIBA]

CMOS Digital Integrated Circuit Silicon Monolithic Quad Bilateral Switch; CMOS数字集成电路硅单片四路双向开关
TC74HC4066AP_07
型号: TC74HC4066AP_07
厂家: TOSHIBA    TOSHIBA
描述:

CMOS Digital Integrated Circuit Silicon Monolithic Quad Bilateral Switch
CMOS数字集成电路硅单片四路双向开关

开关
文件: 总13页 (文件大小:284K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TC74HC4066AP/AF/AFN/AFT  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC74HC4066AP,TC74HC4066AF,TC74HC4066AFN,TC74HC4066AFT  
Quad Bilateral Switch  
Note: xxxFN (JEDEC SOP) is not available in  
Japan.  
The TC74HC4066A is a high speed CMOS QUAD BILATERAL  
SWITCH fabricated with silicon gate C2MOS technology.  
TC74HC4066AP  
It consists of four independent high speed switches capable of  
controlling either digital or analog signals while maintaining the  
CMOS low power dissipation.  
Control input (C) is provided to control the switch. The switch  
turns ON while the C input is high, and the switch turns OFF  
while low.  
All inputs are equipped with protection circuits against static  
discharge or transient excess voltage.  
TC74HC4066AF  
Features  
High speed: t = 7 ns (typ.) at V  
= 5 V  
pd  
CC  
Low power dissipation: I  
= 1 μA (max) at Ta = 25°C  
CC  
High noise immunity: V  
= V  
= 28% V  
(min)  
NIH  
NIL  
CC  
Low on resistance: R  
= 50 Ω (typ.) at V  
= 9 V  
ON  
CC  
High degree of linearity: THD = 0.05% (typ.) at V  
= 5 V  
CC  
Pin and function compatible with 4066B  
TC74HC4066AFN  
TC74HC4066AFT  
Weight  
DIP14-P-300-2.54  
SOP14-P-300-1.27A  
SOL14-P-150-1.27  
TSSOP14-P-0044-0.65A  
: 0.96 g (typ.)  
: 0.18 g (typ.)  
: 0.12 g (typ.)  
: 0.06 g (typ.)  
1
2007-10-01  
TC74HC4066AP/AF/AFN/AFT  
Pin Assignment  
IEC Logic Symbol  
(13)  
(1)  
1C  
×1  
1
1I/O  
1O/I  
2O/I  
2I/O  
2C  
1
2
3
4
5
6
7
14  
V
CC  
(2)  
(3)  
1I/O  
1
1O/I  
2O/I  
3O/I  
4O/I  
13 1C  
12 4C  
11 4I/O  
10 4O/I  
(5)  
(4)  
2C  
2I/O  
(6)  
(8)  
3C  
(9)  
3I/O  
3C  
9
8
3O/I  
3I/O  
(12)  
(11)  
4C  
(10)  
4I/O  
GND  
(V  
)
SS  
(top view)  
Truth Table  
Control  
Switch Function  
H
L
On  
Off  
2
2007-10-01  
TC74HC4066AP/AF/AFN/AFT  
Absolute Maximum Ratings (Note 1)  
Characteristics  
Supply voltage range  
Symbol  
Rating  
0.5 to 13  
Unit  
V
V
V
CC  
Control input voltage  
Switch I/O voltage  
V
0.5 to V  
+ 0.5  
IN  
I/O  
IK  
CC  
CC  
V
I
0.5 to V  
+ 0.5  
V
Control input diode current  
I/O diode current  
±20  
mA  
mA  
mA  
mA  
mW  
°C  
I
±20  
±25  
±50  
OK  
Switch through Current  
I
OUT  
DC V /ground current  
CC  
I
CC  
Power dissipation  
P
500 (DIP) (Note 2)/180 (SOP/TSSOP)  
D
Storage temperature  
T
stg  
65 to 150  
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or  
even destruction.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 2: 500 mW in the range of Ta = 40 to 65°C. From Ta = 65 to 85°C a derating factor of 10 mW/°C should be  
applied up to 300 mW.  
Operating Ranges (Note)  
Characteristics  
Supply voltage  
Symbol  
Rating  
2 to 12  
Unit  
V
V
V
CC  
Control input voltage  
Switch I/O voltage  
V
0 to V  
0 to V  
IN  
I/O  
opr  
CC  
CC  
V
V
Operating temperature  
T
40 to 85  
°C  
0 to 1000 (V  
= 2.0 V)  
CC  
CC  
CC  
0 to 500 (V  
0 to 400 (V  
= 4.5 V)  
= 6.0 V)  
Input rise and fall time  
t
t
ns  
r, f  
0 to 250 (V  
= 10.0 V)  
CC  
Note:  
The operating ranges must be maintained to ensure the normal operation of the device.  
Unused control inputs must be tied to either VCC or GND.  
3
2007-10-01  
TC74HC4066AP/AF/AFN/AFT  
Electrical Characteristics  
DC Characteristics  
Ta =  
Ta = 25°C  
40 to 85°C  
Unit  
Characteristics  
Symbol  
Test Condition  
V
(V)  
CC  
Min  
Typ.  
Max  
Min  
Max  
2.0  
1.50  
3.15  
6.30  
96  
55  
45  
160  
70  
50  
45  
10  
5
1.50  
3.15  
6.30  
8.40  
4.5  
9.0  
High-level control  
input voltage  
V
V
V
IHC  
12.0 8.40  
2.0  
4.5  
0.50  
1.35  
2.70  
3.60  
170  
85  
0.50  
1.35  
2.70  
3.60  
200  
100  
90  
Low-level control  
input voltage  
V
ILC  
9.0  
12.0  
4.5  
V
V
= V  
= V  
IN  
IHC  
to GND  
or GND  
9.0  
I/O  
CC  
I
1 mA  
12.0  
2.0  
80  
I/O  
On resistance  
R
ON  
V
V
= V  
IN  
IHC  
4.5  
100  
75  
130  
95  
= V  
I/O  
CC  
9.0  
I
1 mA  
I/O  
12.0  
4.5  
70  
90  
V
V
= V  
IN  
IHC  
Difference of on  
resistance between  
switches  
ΔR  
ON  
= V  
to GND  
or GND  
9.0  
I/O  
CC  
I
1 mA  
12.0  
5
I/O  
V
V
V
= V  
CC  
OS  
Input/output leakage  
current  
I
= GND or V  
12.0  
12.0  
±100  
±100  
±1000  
±1000  
nA  
OFF  
IS  
IN  
CC  
(switch off)  
= V  
ILC  
Switch input leakage  
current  
V
V
=V  
OS CC  
or GND  
I
nA  
IZ  
(switch on, output  
open)  
= V  
IN  
IHC  
Control input current  
I
V
V
= V  
or GND  
or GND  
12.0  
6.0  
±100  
1.0  
±1000  
10.0  
nA  
IN  
IN  
CC  
CC  
Quiescent supply  
current  
I
= V  
9.0  
4.0  
40.0  
μA  
CC  
IN  
12.0  
8.0  
80.0  
4
2007-10-01  
TC74HC4066AP/AF/AFN/AFT  
AC Characteristics (C = 50 pF, input: t = t = 6 ns)  
L
r
f
Ta =  
40 to 85°C  
Ta = 25°C  
Characteristics  
Symbol  
Test Condition  
Unit  
VCC (V)  
Min  
Typ.  
10  
4
Max  
50  
10  
8
Min  
Max  
65  
13  
10  
9
2.0  
4.5  
Phase difference  
between input and  
output  
φ
pF  
pF  
I-O  
9.0  
3
12.0  
3
7
18  
8
100  
20  
12  
12  
115  
23  
20  
18  
125  
25  
22  
18  
145  
29  
25  
22  
2.0  
4.5  
t
t
pZL  
Output enable time  
Output disable time  
R = 1 kΩ  
L
9.0  
6
pZH  
12.0  
6
20  
10  
8
2.0  
4.5  
t
pLZ  
R = 1 kΩ  
L
pF  
9.0  
t
pHZ  
12.0  
8
30  
30  
30  
30  
2.0  
4.5  
R = 1 kΩ  
L
Maximum control  
input frequency  
C = 15 pF  
L
MHz  
9.0  
V
= 1/2 V  
CC  
OUT  
12.0  
Control input  
capacitance  
C
5
6
10  
10  
pF  
pF  
pF  
pF  
IN  
Switch terminal  
capacitance  
C
I/O  
Feed through  
capacitance  
C
IOS  
0.5  
15  
Power dissipation  
capacitance  
C
PD  
(Note)  
Note:  
C
PD  
is defined as the value of the internal equivalent capacitance which is calculated from the operating  
current consumption without load.  
Average operating current can be obtained by the equation:  
I
= C ·V ·f + I /4 (per channel)  
PD CC IN CC  
CC (opr)  
5
2007-10-01  
TC74HC4066AP/AF/AFN/AFT  
Analog Switch Characteristics (GND = 0 V, Ta = 25°C) (Note)  
Characteristics  
Symbol  
Test Condition  
Typ.  
Unit  
%
V
(V)  
CC  
f
= 1 kHz, V = 4 V , @V  
IN p-p  
= 4.5 V  
= 9.0 V  
CC  
IN  
CC  
Sine wave distortion  
4.5  
9.0  
0.05  
0.04  
R = 10 k, V = 8 V , @V  
IN p-p  
L
(T.H.D)  
C = 50 pF  
L
Adjust f voltage to obtain 0dBm at V  
IN  
OS  
Frequency response  
(switch on)  
Increase f frequency until dB meter reads 3dB  
IN  
4.5  
9.0  
200  
200  
f
MHz  
dB  
max  
R = 50 , C = 10 pF  
L
L
f
= 1 MHz, sine wave  
IN  
Vin is centered at V /2  
CC  
Feedthrough attenuation  
(switch off)  
Adjust input for 0dBm  
4.5  
9.0  
60  
60  
R = 600 , C = 50 pF  
L
L
f
IN  
= 1 MHz, sine wave  
Crosstalk  
R = 600 , C = 50 pF  
4.5  
9.0  
60  
L
L
mV  
dB  
(control input to signal output)  
f
IN  
= 1 MHz, square wave (t = t = 6 ns)  
100  
r
f
Adjust V to obtain 0dBm at input  
IN  
Crosstalk  
4.5  
9.0  
60  
60  
R = 600 , C = 50 pF  
L
L
(between any switches)  
f
IN  
= 1 MHz, sine wave  
Note:  
These characteristics are determined by design of devices.  
6
2007-10-01  
TC74HC4066AP/AF/AFN/AFT  
Switching Characteristics Test Circuits  
1. t  
, t  
, t  
, t  
pLZ pHZ pZL pZH  
6 ns  
6 ns  
V
CC  
V
CC  
V
C
50%  
10%  
GND  
C
V
CC  
O/I  
from  
P.G  
V
OH  
90%  
V
O/I  
I/O  
1 kΩ  
50%  
S
(S = V , S = GND)  
2
1
CC  
2
V
V
OL  
S
1
t
t
t
pHZ  
pZH  
pZL  
GND  
OH  
V
O/I  
50%  
(S = GND, S = V )  
CC  
10%  
1
2
V
OL  
t
pLZ  
2. Cross Talk (control input-switch output)  
fIN = 1 MHz duty = 50% tr = tf = 6 ns  
V
CC  
V
CC  
GND  
C
V
CC  
O/I  
V
/2  
CC  
from  
P.G  
I/O  
V
/2  
CC  
600 Ω  
GND  
3. Feedthrough Attenuation  
V
CC  
C
V
CC  
O/I  
0.1 μF  
I/O  
GND  
7
2007-10-01  
TC74HC4066AP/AF/AFN/AFT  
4. C , C  
IOS  
I/O  
C
IOS  
V
CC  
C
V
CC  
O/I  
I/O  
GND  
5. Crosstalk (between any two switches)  
V
IN  
V
CC  
C
V
CC  
O/I  
I/O  
0.1 μF 600 Ω  
C
I/O  
O/I  
GND  
6. Frequency Response (switch on)  
C
V
CC  
O/I  
0.1 μF  
I/O  
GND  
8
2007-10-01  
TC74HC4066AP/AF/AFN/AFT  
Package Dimensions  
Weight: 0.96 g (typ.)  
9
2007-10-01  
TC74HC4066AP/AF/AFN/AFT  
Package Dimensions  
Weight: 0.18 g (typ.)  
10  
2007-10-01  
TC74HC4066AP/AF/AFN/AFT  
Package Dimensions (Note)  
Note: This package is not available in Japan.  
Weight: 0.12 g (typ.)  
11  
2007-10-01  
TC74HC4066AP/AF/AFN/AFT  
Package Dimensions  
Weight: 0.06 g (typ.)  
12  
2007-10-01  
TC74HC4066AP/AF/AFN/AFT  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
13  
2007-10-01  

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