TC74HC4066AP_07 [TOSHIBA]
CMOS Digital Integrated Circuit Silicon Monolithic Quad Bilateral Switch; CMOS数字集成电路硅单片四路双向开关型号: | TC74HC4066AP_07 |
厂家: | TOSHIBA |
描述: | CMOS Digital Integrated Circuit Silicon Monolithic Quad Bilateral Switch |
文件: | 总13页 (文件大小:284K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TC74HC4066AP/AF/AFN/AFT
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74HC4066AP,TC74HC4066AF,TC74HC4066AFN,TC74HC4066AFT
Quad Bilateral Switch
Note: xxxFN (JEDEC SOP) is not available in
Japan.
The TC74HC4066A is a high speed CMOS QUAD BILATERAL
SWITCH fabricated with silicon gate C2MOS technology.
TC74HC4066AP
It consists of four independent high speed switches capable of
controlling either digital or analog signals while maintaining the
CMOS low power dissipation.
Control input (C) is provided to control the switch. The switch
turns ON while the C input is high, and the switch turns OFF
while low.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
TC74HC4066AF
Features
•
•
•
•
•
•
High speed: t = 7 ns (typ.) at V
= 5 V
pd
CC
Low power dissipation: I
= 1 μA (max) at Ta = 25°C
CC
High noise immunity: V
= V
= 28% V
(min)
NIH
NIL
CC
Low on resistance: R
= 50 Ω (typ.) at V
= 9 V
ON
CC
High degree of linearity: THD = 0.05% (typ.) at V
= 5 V
CC
Pin and function compatible with 4066B
TC74HC4066AFN
TC74HC4066AFT
Weight
DIP14-P-300-2.54
SOP14-P-300-1.27A
SOL14-P-150-1.27
TSSOP14-P-0044-0.65A
: 0.96 g (typ.)
: 0.18 g (typ.)
: 0.12 g (typ.)
: 0.06 g (typ.)
1
2007-10-01
TC74HC4066AP/AF/AFN/AFT
Pin Assignment
IEC Logic Symbol
(13)
(1)
1C
×1
1
1I/O
1O/I
2O/I
2I/O
2C
1
2
3
4
5
6
7
14
V
CC
(2)
(3)
1I/O
1
1O/I
2O/I
3O/I
4O/I
13 1C
12 4C
11 4I/O
10 4O/I
(5)
(4)
2C
2I/O
(6)
(8)
3C
(9)
3I/O
3C
9
8
3O/I
3I/O
(12)
(11)
4C
(10)
4I/O
GND
(V
)
SS
(top view)
Truth Table
Control
Switch Function
H
L
On
Off
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2007-10-01
TC74HC4066AP/AF/AFN/AFT
Absolute Maximum Ratings (Note 1)
Characteristics
Supply voltage range
Symbol
Rating
−0.5 to 13
Unit
V
V
V
CC
Control input voltage
Switch I/O voltage
V
−0.5 to V
+ 0.5
IN
I/O
IK
CC
CC
V
I
−0.5 to V
+ 0.5
V
Control input diode current
I/O diode current
±20
mA
mA
mA
mA
mW
°C
I
±20
±25
±50
OK
Switch through Current
I
OUT
DC V /ground current
CC
I
CC
Power dissipation
P
500 (DIP) (Note 2)/180 (SOP/TSSOP)
D
Storage temperature
T
stg
−65 to 150
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be
applied up to 300 mW.
Operating Ranges (Note)
Characteristics
Supply voltage
Symbol
Rating
2 to 12
Unit
V
V
V
CC
Control input voltage
Switch I/O voltage
V
0 to V
0 to V
IN
I/O
opr
CC
CC
V
V
Operating temperature
T
−40 to 85
°C
0 to 1000 (V
= 2.0 V)
CC
CC
CC
0 to 500 (V
0 to 400 (V
= 4.5 V)
= 6.0 V)
Input rise and fall time
t
t
ns
r, f
0 to 250 (V
= 10.0 V)
CC
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused control inputs must be tied to either VCC or GND.
3
2007-10-01
TC74HC4066AP/AF/AFN/AFT
Electrical Characteristics
DC Characteristics
Ta =
Ta = 25°C
−40 to 85°C
Unit
Characteristics
Symbol
Test Condition
V
(V)
CC
Min
Typ.
Max
Min
Max
2.0
1.50
3.15
6.30
―
―
―
―
―
―
―
―
96
55
45
160
70
50
45
10
5
―
―
1.50
3.15
6.30
8.40
―
―
―
4.5
9.0
High-level control
input voltage
V
―
V
V
IHC
―
―
12.0 8.40
―
―
2.0
4.5
―
―
―
―
―
―
―
―
―
―
―
―
―
―
0.50
1.35
2.70
3.60
170
85
0.50
1.35
2.70
3.60
200
100
90
―
Low-level control
input voltage
V
―
ILC
9.0
―
12.0
4.5
―
V
V
= V
= V
―
IN
IHC
to GND
or GND
9.0
―
I/O
CC
I
≤ 1 mA
12.0
2.0
80
―
I/O
On resistance
R
Ω
―
―
―
ON
V
V
= V
IN
IHC
4.5
100
75
―
130
95
= V
I/O
CC
9.0
―
I
≤ 1 mA
I/O
12.0
4.5
70
―
90
V
V
= V
―
―
―
IN
IHC
Difference of on
resistance between
switches
ΔR
ON
= V
to GND
or GND
9.0
―
―
―
Ω
I/O
CC
I
≤ 1 mA
12.0
5
―
―
―
I/O
V
V
V
= V
CC
OS
Input/output leakage
current
I
= GND or V
12.0
12.0
―
―
―
―
±100
±100
―
―
±1000
±1000
nA
OFF
IS
IN
CC
(switch off)
= V
ILC
Switch input leakage
current
V
V
=V
OS CC
or GND
I
nA
IZ
(switch on, output
open)
= V
IN
IHC
Control input current
I
V
V
= V
or GND
or GND
12.0
6.0
―
―
―
―
―
―
―
―
±100
1.0
―
―
―
―
±1000
10.0
nA
IN
IN
CC
CC
Quiescent supply
current
I
= V
9.0
4.0
40.0
μA
CC
IN
12.0
8.0
80.0
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2007-10-01
TC74HC4066AP/AF/AFN/AFT
AC Characteristics (C = 50 pF, input: t = t = 6 ns)
L
r
f
Ta =
−40 to 85°C
Ta = 25°C
Characteristics
Symbol
Test Condition
Unit
VCC (V)
Min
Typ.
10
4
Max
50
10
8
Min
Max
65
13
10
9
2.0
4.5
―
―
―
―
―
―
―
―
Phase difference
between input and
output
φ
―
pF
pF
I-O
9.0
3
12.0
3
7
18
8
100
20
12
12
115
23
20
18
125
25
22
18
145
29
25
22
2.0
4.5
―
―
―
―
―
―
―
―
t
t
pZL
Output enable time
Output disable time
R = 1 kΩ
L
9.0
6
pZH
12.0
6
20
10
8
2.0
4.5
―
―
―
―
―
―
―
―
t
pLZ
R = 1 kΩ
L
pF
9.0
t
pHZ
12.0
8
30
30
30
30
2.0
4.5
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
R = 1 kΩ
L
Maximum control
input frequency
C = 15 pF
L
MHz
9.0
V
= 1/2 V
CC
OUT
12.0
Control input
capacitance
C
―
―
―
―
―
―
―
5
6
10
―
―
―
―
―
―
―
10
―
―
―
pF
pF
pF
pF
IN
Switch terminal
capacitance
C
I/O
Feed through
capacitance
C
IOS
0.5
15
Power dissipation
capacitance
C
PD
(Note)
Note:
C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
= C ·V ·f + I /4 (per channel)
PD CC IN CC
CC (opr)
5
2007-10-01
TC74HC4066AP/AF/AFN/AFT
Analog Switch Characteristics (GND = 0 V, Ta = 25°C) (Note)
Characteristics
Symbol
Test Condition
Typ.
Unit
%
V
(V)
CC
f
= 1 kHz, V = 4 V , @V
IN p-p
= 4.5 V
= 9.0 V
CC
IN
CC
Sine wave distortion
4.5
9.0
0.05
0.04
R = 10 kΩ, V = 8 V , @V
IN p-p
L
(T.H.D)
C = 50 pF
L
Adjust f voltage to obtain 0dBm at V
IN
OS
Frequency response
(switch on)
Increase f frequency until dB meter reads −3dB
IN
4.5
9.0
200
200
f
MHz
dB
max
R = 50 Ω, C = 10 pF
L
L
f
= 1 MHz, sine wave
IN
Vin is centered at V /2
CC
Feedthrough attenuation
(switch off)
Adjust input for 0dBm
4.5
9.0
−60
−60
R = 600 Ω, C = 50 pF
L
L
f
IN
= 1 MHz, sine wave
Crosstalk
R = 600 Ω, C = 50 pF
4.5
9.0
60
L
L
mV
dB
(control input to signal output)
f
IN
= 1 MHz, square wave (t = t = 6 ns)
100
r
f
Adjust V to obtain 0dBm at input
IN
Crosstalk
4.5
9.0
−60
−60
R = 600 Ω, C = 50 pF
L
L
(between any switches)
f
IN
= 1 MHz, sine wave
Note:
These characteristics are determined by design of devices.
6
2007-10-01
TC74HC4066AP/AF/AFN/AFT
Switching Characteristics Test Circuits
1. t
, t
, t
, t
pLZ pHZ pZL pZH
6 ns
6 ns
V
CC
V
CC
V
C
50%
10%
GND
C
V
CC
O/I
from
P.G
V
OH
90%
V
O/I
I/O
1 kΩ
50%
S
(S = V , S = GND)
2
1
CC
2
V
V
OL
S
1
t
t
t
pHZ
pZH
pZL
GND
OH
V
O/I
50%
(S = GND, S = V )
CC
10%
1
2
V
OL
t
pLZ
2. Cross Talk (control input-switch output)
fIN = 1 MHz duty = 50% tr = tf = 6 ns
V
CC
V
CC
GND
C
V
CC
O/I
V
/2
CC
from
P.G
I/O
V
/2
CC
600 Ω
GND
3. Feedthrough Attenuation
V
CC
C
V
CC
O/I
0.1 μF
I/O
GND
7
2007-10-01
TC74HC4066AP/AF/AFN/AFT
4. C , C
IOS
I/O
C
IOS
V
CC
C
V
CC
O/I
I/O
GND
5. Crosstalk (between any two switches)
V
IN
V
CC
C
V
CC
O/I
I/O
0.1 μF 600 Ω
C
I/O
O/I
GND
6. Frequency Response (switch on)
C
V
CC
O/I
0.1 μF
I/O
GND
8
2007-10-01
TC74HC4066AP/AF/AFN/AFT
Package Dimensions
Weight: 0.96 g (typ.)
9
2007-10-01
TC74HC4066AP/AF/AFN/AFT
Package Dimensions
Weight: 0.18 g (typ.)
10
2007-10-01
TC74HC4066AP/AF/AFN/AFT
Package Dimensions (Note)
Note: This package is not available in Japan.
Weight: 0.12 g (typ.)
11
2007-10-01
TC74HC4066AP/AF/AFN/AFT
Package Dimensions
Weight: 0.06 g (typ.)
12
2007-10-01
TC74HC4066AP/AF/AFN/AFT
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
13
2007-10-01
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