TC74HCT4053AF [TOSHIBA]
Triple 2-Channel Analog Multiplexer/Demultiplexer; 三重2通道模拟多路复用器/多路解复用器
| 型号： | TC74HCT4053AF |
| 厂家： | 
TOSHIBA |
| 描述： | Triple 2-Channel Analog Multiplexer/Demultiplexer |
| 文件： | 总12页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC74HCT4053AF/AFN/AFT
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74HCT4053AF,TC74HCT4053AFN,TC74HCT4053AFT
Triple 2-Channel Analog Multiplexer/Demultiplexer
Note: xxxFN (JEDEC SOP) is not available in
Japan.
The TC74HCT4053A are high speed CMOS ANALOG
TC74HCT4053AF
MULTIPLEXER/DEMULTIPLEXER fabricated with silicon gate
C2MOS technology. They achieve the high speed operation similar
to equivalent LSTTL while maintaining the CMOS low power
dissipation.
This device may be used as a level converter for interfacing TTL
or NMOS to High Speed CMOS. This inputs are compatible with
TTL, NMOS and CMOS output voltage levels.
The TC74HCT4053A has a 2 channel × 3 configuration.
The digital signal to the control terminal turns “ON” the
corresponding switch of each channel a large amplitude signal
TC74HCT4053AFN
(V
CC
(V
CC
− V ) can then be switched by the small logical amplitude
− GND) control signal.
EE
For example, in the case of V
= 5 V, GND = 0 V, V
= −5 V,
CC
EE
signals between −5 V and +5 V can be switched from the logical
circuit with a single power supply of 5 V. As the ON-resistance of
each switch is low, they can be connected to circuits with low
input impedance.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
TC74HCT4053AFT
Features
•
High speed: tpd = 30 ns (typ.) at V
= 5 V
= 0 V
CC
V
EE
•
•
Low power dissipation: I
= 4 μA (max) at Ta = 25°C
CC
Compatible with TTL output: V = 2.0 V (min)
IH
V
IL
= 0.8 V (max)
•
•
•
•
Wide interfacing ability: LSTTL, NMOS, CMOS
Low ON resistance: R = 50 Ω (typ.) at V − V = 9 V
EE
ON
CC
Weight
SOP16-P-300-1.27A
SOL16-P-150-1.27
TSSOP16-P-0044-0.65A
: 0.18 g (typ.)
: 0.13 g (typ.)
: 0.06 g (typ.)
High noise immunity: THD = 0.02% (typ.) at V
− V
= 9 V
EE
CC
Pin and function compatible with 4053B
Pin Assignment
1Y
0Y
1
2
3
4
5
6
7
8
16
V
CC
15 Y-COM
14 X-COM
13 1X
1Z
Z-COM
0Z
12 0X
INH
11
10
9
A
B
C
V
EE
GND
(top view)
1
2007-10-01
TC74HCT4053AF/AFN/AFT
Truth Table
Control Inputs
“ON” Channel
HCT4053A
0X, 0Y, 0Z
1X, 0Y, 0Z
0X, 1Y, 0Z
1X, 1Y, 0Z
0X, 0Y, 1Z
1X, 0Y, 1Z
0X, 1Y, 1Z
1X, 1Y, 1Z
NONE
Inhibit
C
L
B
L
A
L
L
L
L
L
L
L
L
L
H
L
L
H
L
L
H
H
L
L
H
L
H
H
H
H
X
L
H
L
H
H
X
H
X
X: Don’t care
System Diagram
Y-COM
X-COM
A
B
OUTC
IN
0X
1X
0Y
C
1Y
0Z
OUTC
IN
1Z
INH
Z-COM
IEC Logic Symbol
MUXDMUX
(6)
INH
A
G2
(11)
(12)
2 × 0
2 × 1
0, 1
0
1
0X
(14)
(10)
(13)
(2)
1X
0Y
X-COM
B
(15)
(9)
(1)
(5)
Y-COM
C
1Y
0Z
(4)
(3)
Z-COM
1Z
2
2007-10-01
TC74HCT4053AF/AFN/AFT
Absolute Maximum Ratings (Note)
Characteristics
Supply voltage range
Symbol
Rating
Unit
V
−0.5 to 13
−0.5 to 13
V
V
CC
Supply voltage range
Control input voltage
Switch I/O voltage
V
− V
CC
EE
V
−0.5 to V
+ 0.5
CC
V
IN
I/O
V
V
− 0.5 to V
±20
+ 0.5
CC
V
EE
Control input diode current
I/O diode current
I
mA
mA
mA
mA
mW
°C
ICK
IOK
I
±20
Switch through current
I
±25
T
DC V
or ground current
I
±50
CC
CC
Power dissipation
P
180
D
Storage temperature
T
stg
−65 to 150
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Operating Ranges (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage range
Supply voltage range
Supply voltage range
Control input voltage
Switch I/O voltage
V
4.5 to 12
−7.5 to 0
4.5 to 12
V
V
CC
V
EE
V
− V
V
CC
EE
V
0 to V
V
IN
I/O
opr
CC
V
V
to V
V
EE
CC
Operating temperature
Control input rise and fall time
T
−40 to 85
°C
ns
t , t
r
0 to 500
f
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused control inputs must be tied to either VCC or GND.
3
2007-10-01
TC74HCT4053AF/AFN/AFT
Electrical Characteristics
DC Characteristics
Ta =
−40 to 85°C
Test Condition
(V)
Ta = 25°C
Characteristics
Symbol
Unit
V
V
(V)
CC
Min
Typ.
Max
Min
Max
EE
4.5 to 5.5
9.0
2.0
2.5
⎯
⎯
⎯
⎯
2.0
2.5
⎯
⎯
High-level control
input voltage
V
V
V
IHC
4.5 to 5.5
9.0
⎯
⎯
⎯
⎯
0.8
0.8
⎯
⎯
0.8
0.8
Low-level control
input voltage
V
ILC
GND
−4.5
−5.5
GND
4.5
4.5
5.5
9.0
⎯
⎯
⎯
⎯
85
55
50
55
180
120
110
120
⎯
⎯
⎯
⎯
225
150
140
150
V
V
= V
or V
IHC
IN
ILC
= V
to V
I/O
CC
EE
I
≤ 2 mA
I/O
ON resistance
R
ON
Ω
GND
−4.5
−5.5
GND
4.5
4.5
5.5
9.0
⎯
⎯
⎯
⎯
70
50
45
50
150
100
90
⎯
⎯
⎯
⎯
190
125
115
125
V
V
= V
or V
IHC
IN
ILC
= V
or V
I/O
CC
EE
I
≤ 2 mA
I/O
100
GND
−4.5
−5.5
V
V
= V
or V
4.5
4.5
5.5
⎯
⎯
⎯
10
5
30
12
11
⎯
⎯
⎯
35
15
14
IN
ILC
= V
IHC
Difference of ON
resistance between
switches
ΔR
to V
EE
Ω
ON
I/O
CC
I
≤ 2 mA
5
I/O
V
V
V
= V
or GND
OS
CC
GND
5.5
5.5
⎯
⎯
⎯
⎯
±60
⎯
⎯
±600
Input/output leakage
current (switch OFF)
I
= GND or V
nA
OFF
IS
IN
CC
±100
±1000
−5.5
= V
or V
IHC
ILC
V
V
= V
or GND
5.5
5.5
⎯
⎯
⎯
⎯
±60
⎯
⎯
±600
GND
Switch input leakage
current (switch ON)
OS
CC
I
I
nA
μA
μA
IZ
= V
or V
IHC
±100
±1000
−5.5
IN
ILC
Control input current
V
V
= V
= V
or GND
or GND
5.5
⎯
⎯
±0.1
⎯
±1.0
GND
IN
IN
CC
CC
5.5
5.5
⎯
⎯
⎯
⎯
4.0
8.0
⎯
⎯
40.0
80.0
GND
I
CC
IN
−5.5
Quiescent supply
current
Per input:
= 0.5 V or 2.4 V
V
IN
Other input:
or GND
I
5.5
⎯
⎯
2.0
⎯
2.9
mA
GND
C
V
CC
4
2007-10-01
TC74HCT4053AF/AFN/AFT
AC Characteristics (C = 50 pF, Input t = t = 6 ns, GND = 0 V)
L
r
f
Ta =
−40 to 85°C
Test Condition
Ta = 25°C
Characteristics
Symbol
Unit
V
(V) V
(V)
Min
Typ.
Max
Min
Max
EE
CC
GND
GND
GND
4.5
⎯
⎯
⎯
6
5
4
12
11
⎯
⎯
⎯
⎯
15
14
⎯
Phase difference
between input and
output
φI/O
5.5
9.0
ns
ns
ns
GND
GND
GND
4.5
5.5
9.0
⎯
⎯
⎯
33
26
17
50
45
⎯
⎯
⎯
⎯
63
57
⎯
t
pZL
Output enable time
Output disable time
(Note 1)
(Note 1)
t
pZH
GND
GND
GND
4.5
5.5
9.0
⎯
⎯
⎯
45
37
26
65
59
⎯
⎯
⎯
⎯
81
73
⎯
t
pLZ
t
pHZ
Control input
capacitance
C
C
⎯
⎯
⎯
⎯
⎯
⎯
5
11
10
20
15
2
⎯
⎯
⎯
⎯
⎯
10
20
15
2
pF
pF
pF
pF
pF
⎯
in
COMMON terminal
capacitance
5.0
5.0
5.0
5.0
−5.0
−5.0
−5.0
GND
IS
SWITCH terminal
capacitance
C
C
7
OS
Feedthrough
capacitance
0.75
67
IOS
Power dissipation
capacitance
C
PD
(Note 2)
⎯
⎯
Note 1 R = 1 kΩ
L
Note 2:
C
PD
is defined as the value of the internal equivalent capacitance of IC which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
(opr) = C
· V · f + I
CC IN CC
CC
PD
5
2007-10-01
TC74HCT4053AF/AFN/AFT
Analog Switch Characteristics (GND = 0 V, Ta = 25°C) (Note 1)
Test Condition
Characteristics
Symbol
Typ.
Unit
%
V
(V) V
(V)
EE
CC
R
C
= 10 kΩ
= 50 pF
= 1 kHz
L
V
V
= 8.0 V
−4.5
−5.5
4.5
0.020
0.019
Sine wave distortion
(T.H.D)
IN
IN
p-p
= 11.0 V
L
5.5
4.5
p-p
f
IN
(Note 2)
(Note 3)
(Note 2)
(Note 3)
190
150
200
180
Adjust f voltage to obtain 0dBm at V
IN
OS
−4.5
−5.5
Increase f frequency until dB meter
IN
Frequency response
(switch ON)
reads −3dB
f
MHz
dB
MAX
R
L
= 50 Ω, C = 10 pF
L
5.5
f
= 1 MHz, Sine wave
IN
Vin is centered at (V
CC
Adjust input for 0dBm
− V )/2
EE
Feed through
attenuation
(switch OFF)
−4.5
−5.5
4.5
5.5
−50
−50
R
L
= 600 Ω, C = 50 pF
L
f
IN
= 1 MHz, Sine wave
R
f
= 600 Ω, C = 50 pF
4.5
5.5
140
180
−4.5
−5.5
Crosstalk (control
input to signal output)
L
L
mV
dB
dB
= 1 MHz, Square wave (t = t = 6 ns)
IN
r
f
Adjust V to obtain 0dBm at input
IN
−4.5
−5.5
4.5
5.5
−50
−50
R
L
= 600 Ω, C = 50 pF
L
Crosstalk (between
any switches)
f
IN
= 1 MHz, Sine wave
R
L
= 50 Ω, C = 15 pF
L
4.5
−90
−4.5
f
= 100 kHz, V
= 1 V
SWITCH RMS
IN
Note 1: These characteristics are determined by design of devices.
Note 2: Input COMMON terminal, and measured at SWITCH terminal.
Note 3: Input SWITCH terminal, and measured at COMMON terminal.
6
2007-10-01
TC74HCT4053AF/AFN/AFT
Switching Characteristics Test Circuits
1. t
, t
, t
, t
pLZ pHZ pZL pZH
6 ns
6 ns
V
CC
3 V
90%
10%
V
1.3 V
C
GND
V
CC
from
P.G
C
V
OH
90%
V
O/I
1 kΩ
1.3 V
I/O
O/I
S
(S = V , S = GND)
2
1
CC
2
V
V
OL
S
1
t
t
t
pHZ
pZH
pZL
V
GND
EE
OH
V
O/I
1.3 V
(S = GND, S = V
)
CC
10%
1
2
V
OL
t
pLZ
2. Cross Talk (control input − switch output)
= 1 MHz duty = 50% t = t = 6 ns
f
IN
r
f
V
CC
−V
CC
GND
V
CC
from
P.G
C
I/O
O/I
V
EE
GND
3. Feedthrough Attenuation
V
V
CC
CC
C
0.1 μF
O/I
I/O
V
IN
V
GND
EE
4. C , C , C
OS
IOS
IS
C
IOS
V
CC
V
CC
C
(SWITCH)
(COMMON)
O/I
I/O
V
GND
EE
7
2007-10-01
TC74HCT4053AF/AFN/AFT
5. Cross Talk (between any two switches)
V
V
CC
CC
C
V
IN
I/O
O/I
O/I
0.1 μF 600 Ω
C
I/O
V
GND
EE
V
V
CC
CC
1 V
RMS
C
V
IN
I/O
COM
C
I/O
V
GND
EE
6. Frequency Response (switch ON)
V
V
CC
CC
C
V
IN
O/I
I/O
V
0.1 μF
GND
EE
8
2007-10-01
TC74HCT4053AF/AFN/AFT
Package Dimensions
Weight: 0.18 g (typ.)
9
2007-10-01
TC74HCT4053AF/AFN/AFT
Package Dimensions (Note)
Note: This package is not available in Japan.
Weight: 0.13 g (typ.)
10
2007-10-01
TC74HCT4053AF/AFN/AFT
Package Dimensions
Weight: 0.06 g (typ.)
11
2007-10-01
TC74HCT4053AF/AFN/AFT
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety
in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from
its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third
parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
12
2007-10-01
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