TC7MBL3245CFT(EL) [TOSHIBA]
IC,BUS SWITCH,CMOS,TSSOP,20PIN,PLASTIC;
| 型号： | TC7MBL3245CFT(EL) |
| 厂家： | 
TOSHIBA |
| 描述： | IC,BUS SWITCH,CMOS,TSSOP,20PIN,PLASTIC 驱动 光电二极管 逻辑集成电路 |
| 文件： | 总9页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC7MBL3245CFT
CMOS Digital Integrated Circuits Silicon Monolithic
TC7MBL3245CFT
1. Functional Description
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Low-Voltage, Low-Capacitance Octal Bus Switch
2. General
The TC7MBL3245CFT is a Low Voltage/Low Capacitance CMOS 8bit Bus Switch. The low on-resistance of the
switch allows connections to be made with minimal propagation delay time.
The TC7MBL3245CFT requires the output enable (OE) input to be set high to place the output into the high
impedance.
All inputs are equipped with protection circuits against static discharge.
3. Features
(1) Operating voltage: VCC = 1.65 to 3.6 V
(2) ON capacitance: CI/O = 7.5 pF Switch On (typ.) @VCC = 3.0 V
(3) ON resistance: RON = 6.5 Ω (typ.) @VCC = 3.0 V, VIS = 0 V
(4) ESD performance: Machine model ≥ ±200 V
Human body model ≥ ±2000 V
(5) Power-down protection for inputs (OE and I/O)
(6) Package: TSSOP20
(7) Pin compatible with the TC7MBL3245A, B, S
4. Packaging
TSSOP20
Start of commercial production
2008-06
©2017
Toshiba Electronic Devices & Storage Corporation
2017-10-03
Rev.3.0
1
TC7MBL3245CFT
5. Pin Assignment
6. Marking
7. Block Diagram
8. Truth Table
Inputs OE
Function
L
A port = B port
Disconnect
H
©2017
2017-10-03
Rev.3.0
2
Toshiba Electronic Devices & Storage Corporation
TC7MBL3245CFT
9. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Symbol
Test Condition
Rating
Unit
VCC
VIN
VS
-0.5 to 4.6
-0.5 to 4.6
-0.5 to 4.6
-0.5 to VCC +0.5
-50
V
V
V
Input voltage (OE)
Switch I/O voltage
VCC = 0 V or Switch = Off
Switch = On
Clamp diode current
Switch I/O current
Power dissipation
VCC/ground current
Storage temperature
IIK
IS
mA
mA
mW
mA
50
PD
180
ICC/IGND
Tstg
±100
-65 to 150
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“HandlingPrecautions”/“DeratingConceptandMethods”)andindividualreliabilitydata(i.e. reliabilitytestreport
and estimated failure rate, etc).
10. Operating Ranges (Note)
Characteristics
Supply voltage
Symbol
Test Condition
Rating
Unit
VCC
VIN
VS
1.65 to 3.6
0 to 3.6
V
V
V
Input voltage (OE)
Switch I/O voltage
VCC = 0 V or Switch = Off
Switch = On
0 to 3.6
0 to VCC
-40 to 85
0 to 10
Operating temperature
Input rise time
Topr
dt/dv
ns/V
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused control inputs must be tied to either VCC or GND.
©2017
Toshiba Electronic Devices & Storage Corporation
2017-10-03
Rev.3.0
3
TC7MBL3245CFT
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 )
Characteristics
Symbol Note
VIH
Test Condition
VCC (V)
Min
Typ.
Max
Unit
V
High-level input voltage
(OE)
1.65 to 3.6 0.7 × VCC
Low-level input voltage
(OE)
VIL
IIN
1.65 to 3.6
1.65 to 3.6
0.3 × VCC
±1.0
V
Input leakage current
(OE)
VIN = 0 to 3.6 V
OE, A, B = 0 to 3.6 V
µA
Power-OFF leakage current
IOFF
ISZ
0
10
µA
µA
Switch OFF-state leakage
current
A, B = 0 V to VCC,
OE = VCC
1.65 to 3.6
±1.0
ON-resistance
RON (Note 1), VIS = 0 V,
(Note 2) IIS = 30 mA
3.0
3.0
6.5
11
12
7
11
16
18
11
20
21
14
26
10
Ω
VIS = 3.0 V,
IIS = 30 mA
VIS = 2.4 V,
IIS = 15 mA
3.0
VIS = 0 V,
IIS = 24 mA
2.3
VIS = 2.3 V,
IIS = 24 mA
2.3
13
15
8
VIS = 2.0 V,
IIS = 15 mA
2.3
VIS = 0 V,
IIS = 4 mA
1.65
1.65
3.6
VIS = 1.65 V,
IIS = 4 mA
17
Quiescent supply current
ICC
VIN = VCC or GND,
IOUT = 0 A
µA
Note 1: All typical values are at Ta = 25 .
Note 2: Measured by the voltage drop between A and B pins at the indicated current through the switch. On-resistance
is determined by the lower of the voltages on the two (A or B) pins.
11.2. AC Characteristics (Unless otherwise specified, Ta = -40 to 85 )
Characteristics
Output enable time
Symbol
Test Condition
VCC (V)
Min
Max
Unit
ns
tPZL,tPZH See Fig. 11.2.1, 11.2.2,
Table 11.2.1
3.3 ± 0.3
2.5 ± 0.2
1.8 ± 0.15
3.3 ± 0.3
2.5 ± 0.2
1.8 ± 0.15
6
7
11
6
Output disable time
tPLZ,tPHZ See Fig. 11.2.1, 11.2.2,
Table 11.2.1
ns
7
11
11.3. Capacitive Characteristics (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Input capacitance
Symbol
Test Condition
VCC (V)
Typ.
Unit
CIN
CI/O
CI/O
VIN = 0 V
3.0
3.0
3.0
4
pF
pF
pF
Switch terminal OFF-capacitance
Switch terminal ON-capacitance
OE = VCC, VIS = 0 V
OE = GND, VIS = 0 V
3.5
7.5
Note: Parameter guaranteed by design.
©2017
Toshiba Electronic Devices & Storage Corporation
2017-10-03
Rev.3.0
4
TC7MBL3245CFT
Fig. 11.2.1 AC Test Circuit
Table 11.2.1 Parameter for AC Test Circuit
Parameter
Switch
tPLZ, tPZL
tPHZ, tPZH
2 × VCC
GND
Fig. 11.2.2 AC Waveform tPLZ, tPHZ, tPZL, tPZH
©2017
Toshiba Electronic Devices & Storage Corporation
2017-10-03
Rev.3.0
5
TC7MBL3245CFT
12. Rise and Fall Time (tr/tf)
The tr(out) and tf(out) values of the output signals are affected by the CR time constant of the input, which consists
of the switch terminal capacitance (CI/O) and the on-resistance (RON) of the input.
In practice, the tr(out) and tf(out) values are also affected by the circuit's capacitance and resistance components
other than those of the TC7MBL3245CFT.
The tr(out)/tf(out) values can be approximated as follows. (Figure 12.1, Table 12.1 shows the test circuit.)
tr(out)/tf(out) (approx) = - (CI/O + CL) (RDRIVE + RON) ln (((VOH - VOL) - VM) / (VOH - VOL))
Where, RDRIVE is the output impedance of the previous-stage circuit.
Calculation example:
tr(out) (approx) = - (7.5 + 15) E - 12 (120 + 6.5) ln (((3.0 - 0) - 1.5) / (3.0 - 0)) ≈ 2.0 ns
Calculation conditions:
VCC = 3.0 V, CL = 15 pF, RDRIVE = 120 Ω (output impedance of the previous IC), VM = 1.5 V (VCC/2)
Output of the previous IC = digital (i.e., high-level voltage = VCC, low-level voltage = GND)
Fig. 12.1 Calculation Circuit
Table 12.1 Calculation Circuit
Characteristics
VM
VCC = 3.3 ± 0.3 V
VCC = 2.5 ± 0.2 V
VCC = 1.8 ± 0.15 V
VCC/2
VCC/2
VCC/2
©2017
Toshiba Electronic Devices & Storage Corporation
2017-10-03
Rev.3.0
6
TC7MBL3245CFT
13. Characteristics Curves (Note)
Fig. 13.1 RON - VIS (Ta = 25 )
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2017
Toshiba Electronic Devices & Storage Corporation
2017-10-03
Rev.3.0
7
TC7MBL3245CFT
Package Dimensions
Unit: mm
Weight: 0.08 g (typ.)
Package Name(s)
Nickname: TSSOP20
©2017
Toshiba Electronic Devices & Storage Corporation
2017-10-03
Rev.3.0
8
TC7MBL3245CFT
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©2017
Toshiba Electronic Devices & Storage Corporation
2017-10-03
Rev.3.0
9
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