TC7SH08FU9(T5LJFT [TOSHIBA]

AND Gate;


型号：	TC7SH08FU9(T5LJFT
厂家：	TOSHIBA
描述：	AND Gate 栅逻辑集成电路
文件：	总7页 (文件大小：103K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TC7SH08FU

CMOS Digital Integrated Circuits Silicon Monolithic

TC7SH08FU

1. Functional Description

•

2-Input AND Gate

2. Features

(1) AEC-Q100 (Rev. H) (Note 1)

(2) Wide operating temperature range: Topr = -40 to 125  (Note 2)

(3) High speed operation: tpd = 4.3 ns (typ.) (VCC = 5.0 V, CL = 15 pF)

(4) Low power dissipation: ICC = 2.0 µA (max) (Ta = 25 )

(5) High noise immunity: VNIH = VNIL = 28 % VCC (min)

(6) 5.5 V tolerant inputs

(7) Wide operating voltage range: VCC = 2.0 to 5.5 V

Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales

representative.

Note 2: For devices with the ordering part number ending in J(CT. Topr = -40 to 85  for the other devices.

3. Packaging

USV

Start of commercial production

1993-09

2018-12-14

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

TC7SH08FU

4. Marking and Pin Assignment

Marking

Pin Assignment (Top view)

5. IEC Logic Symbol

6. Truth Table

7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Symbol

Note

Rating

Unit

Supply voltage

Input voltage

VCC

VIN

-0.5 to 7.0

-0.5 to VCC + 0.5

-20

DC output voltage

VOUT

IIK

Input diode current

Output diode current

DC output current

VCC/ground current

Power dissipation

Storage temperature

IOK

(Note 1)

±20

IOUT

ICC

±25

±50

200

Tstg

-65 to 150



Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even

destruction.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“HandlingPrecautions”/“DeratingConceptandMethods”)andindividualreliabilitydata(i.e. reliabilitytestreport

and estimated failure rate, etc).

Note 1: VOUT < GND, VOUT > VCC

Toshiba Electronic Devices & Storage Corporation

2018-12-14

Rev.4.0

TC7SH08FU

8. Operating Ranges (Note)

Characteristics

Symbol

Note

Test Condition

Rating

Unit

Supply voltage

Input voltage

VCC

VIN



2.0 to 5.5

0 to 5.5

Output voltage

VOUT

Topr

0 to VCC

-40 to 125

-40 to 85

0 to 100

0 to 20

Operating temperature

(Note 1)

(Note 2)



Input rise and fall time

dt/dv

VCC = 3.3 ± 0.3 V

VCC = 5.0 ± 0.5 V

ns/V

Note: The operating ranges must be maintained to ensure the normal operation of the device.

Unused inputs must be tied to either VCC or GND.

Note 1: For devices with the ordering part number ending in J(CT.

Note 2: For devices except those with the ordering part number ending in J(CT.

9. Electrical Characteristics

9.1. DC Characteristics (Unless otherwise specified, Ta = 25 )

Characteristics

Symbol

VIH

Test Condition

VCC (V)

2.0

Min

1.5

Typ.

Max

Unit

High-level input voltage



3.0 to 5.5 VCC × 0.7

Low-level input voltage

High-level output voltage

VIL



2.0

3.0 to 5.5

2.0



0.5



VCC × 0.3



VOH

VIN = VIH

IOH = -50 µA

1.9

2.9

4.4

2.58

3.94



2.0

3.0

4.5



3.0



4.5



IOH = -4 mA

IOH = -8 mA

IOL = 50 µA

3.0



4.5



Low-level output voltage

VOL

VIN = VIH or VIL

2.0

0.0



0.1

3.0



0.1

4.5



0.1

IOL = 4 mA

IOL = 8 mA

3.0



0.36

±0.1

2.0

4.5



Input leakage current

IIN

VIN = 5.5 V or GND

VIN = VCC or GND

0 to 5.5

5.5



µA

Quiescent supply current

ICC



Toshiba Electronic Devices & Storage Corporation

2018-12-14

Rev.4.0

TC7SH08FU

9.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 )

Characteristics

Symbol

VIH

Test Condition

VCC (V)

2.0

Min

1.5

Max

Unit

High-level input voltage



3.0 to 5.5 VCC × 0.7

Low-level input voltage

High-level output voltage

VIL



2.0

3.0 to 5.5

2.0



0.5

VCC × 0.3



VOH

VIN = VIH

IOH = -50 µA

1.9

2.9

4.4

2.48

3.80



3.0



4.5



IOH = -4 mA

IOH = -8 mA

IOL = 50 µA

3.0



4.5



Low-level output voltage

VOL

VIN = VIH or VIL

2.0

0.1

3.0



0.1

4.5



0.1

IOL = 4 mA

IOL = 8 mA

3.0



0.44

±1.0

20.0

4.5



Input leakage current

IIN

VIN = 5.5 V or GND

VIN = VCC or GND

0 to 5.5

5.5



µA

Quiescent supply current

ICC



9.3. DC Characteristics (Note) (Unless otherwise specified, Ta = -40 to 125 )

Characteristics

Symbol

VIH

Test Condition

VCC (V)

2.0

Min

1.5

Max

Unit

High-level input voltage



3.0 to 5.5 VCC × 0.7

Low-level input voltage

High-level output voltage

VIL



2.0

3.0 to 5.5

2.0



0.5

VCC × 0.3



VOH

VIN = VIH

IOH = -50 µA

1.9

2.9

4.4

2.40

3.70



3.0



4.5



IOH = -4 mA

IOH = -8 mA

IOL = 50 µA

3.0



4.5



Low-level output voltage

VOL

VIN = VIH or VIL

2.0

0.1

3.0



0.1

4.5



0.1

IOL = 4 mA

IOL = 8 mA

3.0



0.55

±2.0

40.0

4.5



Input leakage current

IIN

VIN = 5.5 V or GND

VIN = VCC or GND

0 to 5.5

5.5



µA

Quiescent supply current

ICC



Note: For devices with the ordering part number ending in J(CT.

Toshiba Electronic Devices & Storage Corporation

2018-12-14

Rev.4.0

TC7SH08FU

9.4. AC Characteristics (Unless otherwise specified, Ta = 25 , Input: tr = tf = 3 ns)

Test

Condition

Characteristics

Symbol

Note

VCC (V)

CL (pF)

Min

Typ.

Max

Unit

Propagation delay time

tPLH,tPHL



3.3 ± 0.3



6.2

8.7

4.3

5.8

8.8

12.3

5.9

7.9

5.0 ± 0.5

Input capacitance

CIN



Power dissipation

capacitance

CPD

(Note 1)



Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current

consumption without load. Average operating current can be obtained by the equation.

ICC(opr) = CPDVCCfIN + ICC

9.5. AC Characteristics

(Unless otherwise specified, Ta = -40 to 85 , Input: tr = tf = 3 ns)

Characteristics

Propagation delay time

Symbol

Test Condition

VCC (V) CL (pF)

Min

Max

Unit

tPLH,tPHL



3.3 ± 0.3

1.0



10.5

14.0

7.0

5.0 ± 0.5

9.0

Input capacitance

CIN



9.6. AC Characteristics (Note)

(Unless otherwise specified, Ta = -40 to 125 , Input: tr = tf = 3 ns)

Characteristics

Propagation delay time

Symbol

Test Condition

VCC (V) CL (pF)

Min

Max

Unit

tPLH,tPHL



3.3 ± 0.3

1.0



12.0

15.5

8.0

5.0 ± 0.5

10.0

Input capacitance

CIN



Note: For devices with the ordering part number ending in J(CT.

Toshiba Electronic Devices & Storage Corporation

2018-12-14

Rev.4.0

TC7SH08FU

Package Dimensions

Unit: mm

Weight: 0.006 g (typ.)

Package Name(s)

Nickname: USV

Toshiba Electronic Devices & Storage Corporation

2018-12-14

Rev.4.0

TC7SH08FU

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https://toshiba.semicon-storage.com/

2018-12-14

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

TC7SH08FU9(T5LJFT [TOSHIBA]

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