TH58BYG2S3HBAI6 [TOSHIBA]

SLC NAND & BENAND Reliability and Performance;


型号：	TH58BYG2S3HBAI6
厂家：	TOSHIBA
描述：	SLC NAND & BENAND Reliability and Performance
文件：	总2页 (文件大小：868K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NAND FLASH MEMORY

SLC NAND & BENAND

Reliability and Performance

Toshiba’s SLC NAND advanced flash memory

products provide cutting-edge endurance and data

retention for sensitive or frequently used system data.

For long-lasting products or systems working with

extremely high data throughput between the host and

the memory, Toshiba's SLC is a suitable solution.

Toshiba’s new BENAND™ removes the burden of

error correction code (ECC) from the host processor

by embedding ECC directly in the hardware while

maintaining the same specifications, reliability and

performance as raw SLC NAND.

APPLICATIONS

• Industrial

INVEꢀTOR OF

• Consumer Electronics

• Multimedia

• Smart Metering & Intelligent Lighting

FLASH

ꢁ

ꢂ

FEATURES

ADVANTAGES

BENEFITS

• Broad lineup to meet customer

demand for different densities

• 24nm technology for cost optimization

• Long data retention, extreme write/

erase performance

• Small package available to reduce

board space

• No ECC operation is required on the

host side (BENAND)

• A suitable solution for long-lasting

storage of significant or frequently

changed data

• Reduced BOM cost due to latest

24nm production technology

• Supports smaller board size (e.g.

for mobile devices)

• Using Toshiba BENAND, it is

possible to utilize the latest 24nm

SLC NAND flash technology even

if the existing platform cannot

support higher bit ECC. No

hardware change necessary.

• SLC NAND 24nm

• 1Gb – 128Gb

• Extended temperature range

• TSOP and BGA package

• BENAND 24nm

Built-in ECC SLC NAND

• 1Gb – 8Gb

• On-chip H/W ECC

• Same reliability and performance

as raw SLC

• Produced in Toshiba's cutting-edge

technology flash factory

• Same hardware interface and

package as raw SLC

SPECIFICATIONS

Product / Features

Density

SLC NAND

BENAND™ (SLC+ECC)

1Gb – 8Gb

1Gb – 128Gb

Technology

24nm

ECC (Error Correction Code)

Required on Host Side

Embedded on Memory Chip

-40°C to 85°C

0°C to 70°C

Temperature

Package

TSOP and BGA

BENAND – SLC WITH EMBEDDED ECC FOR BOM REDUCTION AND SYSTEM FLEXIBILITY

HOST SYSTEM

BENAND

Data read from the SLC is

already error corrected

8bit

ECC

Main CPU

Raw SLC NAND 24nm

Memory Controller

Data read from the SLC is

1bit ECC

Raw SLC NAND 43nm

not error corrected

www.toshiba.semicon-storage.com

SLC NAND – PRODUCT LIST

Density

Part Number

Techn.

Page Size

Vcc

ECC

Temperature

Package

TC58NVG0S3HTA00

TC58NYG0S3HBAI4

TC58NVG0S3HTAI0

TC58NVG0S3HBAI4

TC58NYG0S3HBAI6

TC58NVG0S3HBAI6

TC58NVG1S3HTA00

TC58NYG1S3HBAI4

TC58NVG1S3HTAI0

TC58NVG1S3HBAI4

TC58NYG1S3HBAI6

TC58NVG1S3HBAI6

TH58NVG2S3HTA00

TC58NVG2S0HTA00

TC58NVG2S0HTAI0

TH58NVG2S3HTAI0

TH58NVG2S3HBAI4

TH58NYG2S3HBAI4

TC58NVG2S0HBAI4

TC58NYG2S0HBAI4

TC58NVG2S0HBAI6

TC58NYG2S0HBAI6

TH58NVG3S0HTA00

TH58NVG3S0HBAI4

TH58NYG3S0HBAI4

TH58NVG3S0HTAI0

TH58NVG3S0HBAI6

TH58NYG3S0HBAI6

TH58NVG4S0FTA20

TH58NVG4S0FTAK0

TH58NVG4S0FBAID

TH58NVG4S0HTA20

TH58NVG4S0HTAK0

24nm

32nm

(2048+128)x8 bit

(4096+256)x8 bit

(2048+128)x8 bit

(4096+256)x8 bit

3.3V

1.8V

3.3V

1.8V

3.3V

1.8V

3.3V

1.8V

3.3V

1.8V

3.3V

1.8V

3.3V

1.8V

3.3V

1.8V

3.3V

1.8V

3.3V

8bit/512B

4bit/512B

0°C to 70°C

-40°C to 85°C

0°C to 70°C

-40°C to 85°C

0°C to 70°C

48TSOP 12x20

63BGA 9x11

48TSOP 12x20

63BGA 9x11

67BGA 6.5x8

48TSOP 12x20

63BGA 9x11

48TSOP 12x20

63BGA 9x11

67BGA 6.5x8

48TSOP 12x20

63BGA 9x11

67BGA 6.5x8

48TSOP 12x20

63BGA 9x11

48TSOP 12x20

67BGA 6.5x8

48TSOP 12x20

63BGA 10x11

1Gb

2Gb

0°C to 70°C

-40°C to 85°C

0°C to 70°C

-40°C to 85°C

0°C to 70°C

4Gb

8Gb

16Gb

-40°C to 85°C

24nm

(4096+256)x8 bit

3.3V

8bit/512B

0°C to 70°C

48TSOP 12x20

24nm

(4096+256)x8 bit

(8192+1024)x8 bit

3.3V

8bit/512B

24bit/1024B

-40°C to 85°C

0°C to 70°C

-40°C to 85°C

0°C to 70°C

48TSOP 12x20

TC58NVG5H2HTA00

TC58NVG5H2HTAI0

TH58NVG6H2HTAK0

TH58NVG7H2HTA20

32Gb

64Gb

128Gb

BENAND™ – PRODUCT LIST

Density

1Gb

Part Number

Techn.

Page Size

Vcc

ECC

Temperature

Package

TC58BVG0S3HTA00

TC58BYG0S3HBAI4

TC58BVG0S3HTAI0

TC58BVG0S3HBAI4

TC58BYG0S3HBAI6

TC58BVG0S3HBAI6

TC58BVG1S3HTA00

TC58BYG1S3HBAI4

TC58BVG1S3HTAI0

TC58BVG1S3HBAI4

TC58BYG1S3HBAI6

TC58BVG1S3HBAI6

TH58BVG2S3HTA00

TC58BVG2S0HTA00

TC58BVG2S0HTAI0

TH58BVG2S3HTAI0

TH58BVG2S3HBAI4

TH58BYG2S3HBAI4

TC58BVG2S0HBAI4

TC58BYG2S0HBAI4

TC58BVG2S0HBAI6

TC58BYG2S0HBAI6

TH58BYG2S3HBAI6

TH58BVG3S0HTA00

TH58BYG3S0HBAI4

TH58BVG3S0HTAI0

TH58BVG3S0HBAI4

TH58BVG3S0HBAI6

TH58BYG3S0HBAI6

24nm

(2048+64)x8 bit

(4096+128)x8 bit

(2048+64)x8 bit

(4096+128)x8 bit

(2048+64)x8 bit

(4096+128)x8 bit

3.3V

1.8V

3.3V

1.8V

3.3V

1.8V

3.3V

1.8V

3.3V

1.8V

3.3V

1.8V

3.3V

1.8V

3.3V

1.8V

3.3V

1.8V

internal ECC

0°C to 70°C

-40°C to 85°C

0°C to 70°C

-40°C to 85°C

0°C to 70°C

48TSOP 12x20

63BGA 9x11

48TSOP 12x20

63BGA 9x11

67BGA 6.5x8

48TSOP 12x20

63BGA 9x11

48TSOP 12x20

63BGA 9x11

67BGA 6.5x8

48TSOP 12x20

63BGA 9x11

67BGA 6.5x8

48TSOP 12x20

63BGA 9x11

48TSOP 12x20

63BGA 9x11

67BGA 6.5x8

2Gb

4Gb

8Gb

0°C to 70°C

-40°C to 85°C

0°C to 70°C

-40°C to 85°C

BENAND™ is the trademark of Toshiba Corporation.

Product density is identified based on the maximum density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user

Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application.

Maximum read and write speed may vary depending on the host device, read and write conditions, and file size.

www.toshiba.semicon-storage.com

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