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TIM1011-2L [TOSHIBA]

MICROWAVE POWER GaAs FET; 微波功率GaAs FET
TIM1011-2L
型号： TIM1011-2L
厂家： TOSHIBA    TOSHIBA
描述：

MICROWAVE POWER GaAs FET
微波功率GaAs FET

晶体 晶体管 微波 CD 局域网
文件： 总5页 (文件大小：147K)
中文：  中文翻译
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TOSHIBA  
MICROWAVE SEMICONDUCTOR  
MICROWAVE POWER GaAs FET  
TIM1011-2L  
TECHNICAL DATA  
FEATURES  
HIGH POWER  
P1dB=33.5dBm at 10.7GHz to 11.7GHz  
HIGH GAIN  
BROAD BAND INTERNALLY MATCHED  
HERMETICALLY SEALED PACKAGE  
„
„
„
„
G1dB=7.5dB at 10.7GHz to 11.7GHz  
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )  
°
CHARACTERISTICS  
Output Power at 1dB  
Compression Point  
Power Gain at 1dB  
Compression Point  
Drain Current  
SYMBOL  
P1dB  
CONDITION  
MIN. TYP. MAX. UNIT  
32.5 33.5  
dBm  
VDS= 9V  
G1dB  
6.5  
-42  
7.5  
dB  
f =10.7-11.7GHz  
IDS1  
ηadd  
IM3  
0.85  
24  
1.1  
A
%
Power Added Efficiency  
3rd Order Intermodulation  
Distortion  
Two Tone Test  
P=22dBm  
-45  
dBc  
(Single Carrier Level)  
Drain Current  
IDS2  
0.85  
1.1  
80  
A
Channel Temperature Rise  
∆Tch  
VDS X IDS X Rth(c-c)  
°C  
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )  
°
CHARACTERISTICS  
Transconductance  
SYMBOL  
gm  
CONDITION  
VDS= 3V  
IDS=1.0A  
MIN. TYP. MAX. UNIT  
600  
mS  
Pinch-off Voltage  
VGSoff VDS= 3V  
IDS= 30mA  
-2.0 -3.5 -5.0  
V
Saturated Drain Current  
IDSS  
VDS= 3V  
VGS= 0V  
IGS= -30µA  
2.0  
5.0  
2.6  
A
Gate-Source Breakdown  
Voltage  
VGSO  
-5  
V
Thermal Resistance  
Rth(c-c) Channel to Case  
6.0  
°C/W  
♦ The information contained herein is presented only as a guide for the applications of our products. No responsibility is  
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No  
license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.  
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA  
before proceeding with design of equipment incorporating this product.  
TOSHIBA CORPORATION  
Apr. 2000  
TIM1011-2L  
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )  
°
CHARACTERISTICS  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
SYMBOL  
VDS  
VGS  
IDS  
RATING  
UNIT  
V
15  
-5  
V
2.6  
A
Total Power Dissipation (Tc= 25 °C)  
Channel Temperature  
Storage  
PT  
15  
W
Tch  
175  
°C  
°C  
Tstg  
-65 +175  
PACKAGE OUTLINE (2-9D1B)  
Unit : mm  
4-R2.4  
c
d
d
cGate  
dSource  
eDrain  
e
0.5±0.15  
13.0±0.3  
17.0 MAX.  
8.5 MAX.  
HANDLING PRECAUTIONS FOR PACKAGED TYPE  
Soldering iron should be grounded and the operating time should not exceed 10 seconds  
at 260°C.  
2
TIM1011-2L  
Output Power vs. Frequency  
37  
36  
35  
34  
33  
32  
31  
VDS = 9 V  
IDS 0.85A  
Pin = 26 dBm  
9.7  
10.2  
10.7  
11.2  
11.7  
12.2  
12.7  
Frequency (GHz)  
Output Power vs. Input Power  
36  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
f = 11.7 GHz  
35  
34  
33  
32  
31  
30  
29  
28  
27  
VDS = 9V  
IDS 0.85 A  
20  
22  
24  
26  
28  
30  
Pin (dBm)  
3
TIM1011-2L  
POWER DISSIPATION VS. CASE TEMPERATURE  
25  
20  
15  
10  
5
0
0
40  
80  
120  
160  
200  
Tc (℃ )  
IM3 vs. OUTPUT POWER CHARACTERISTICS  
-10  
-20  
-30  
-40  
-50  
-60  
f = 11.7 GHz  
VDS = 9 V  
IDS 1.0 A  
∆f= 5MHz  
17  
19  
21  
23  
25  
27  
29  
Po(dBm), Single Carrier  
4
TIM1011-2L  
TIM11011-2L S-PARAMETERS  
(MAGN. and ANGLES)  
VDS=9V, IDS=1.0A  
f=10.4 – 13.2GHz  
FREQUENCY  
(GHz)  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
10.4  
10.8  
11.2  
11.6  
12.0  
12.4  
12.8  
13.2  
0.76  
0.54  
0.25  
0.16  
0.26  
0.30  
0.34  
0.49  
148  
110  
50  
2.49  
2.98  
3.12  
2.84  
2.55  
2.37  
2.30  
2.05  
-85  
-131  
180  
132  
89  
0.066  
0.110  
0.145  
0.153  
0.155  
0.158  
0.164  
0.154  
-139  
176  
129  
84  
0.55  
0.46  
0.38  
0.36  
0.37  
0.34  
0.22  
0.18  
121  
62  
-9  
-63  
-67  
-103  
-130  
-146  
-48  
-123  
-164  
142  
58  
43  
46  
3
-1  
-42  
-100  
-61  
5

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