TIM1213-8L [TOSHIBA]

TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power;


型号：	TIM1213-8L
厂家：	TOSHIBA
描述：	TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power 局域网 CD 晶体管
文件：	总4页 (文件大小：130K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TOSHIBA

MICROWAVE POWER GaAs FET

TIM1213-8L

Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)

Features

• Low intermodulation distortion

- IM = -45 dBc at Po = 28 dBm,

- Single carrier level

• High power

- P

= 39.5 dBm at 12.7 GHz to 13.2 GHz

1dB

• High gain

- G = 5.0 dB at 12.7 GHz to 13.2 GHz

1dB

• Broad band internally matched

• Hermetically sealed package

RF Performance Speciﬁcations (Ta = 25° C)

Characteristics

Output Power at 1dB

Symbol

Condition

Unit

Min.

Typ.

Max

dBm

38.5

39.5

–

1dB

Compression Point

Power Gain at 1dB

Compression Point

4.0

5.0

1dB

= 9V

f = 12.7 ~ 13.2 GHz

Drain Current

–

3.4

–

4.4

±0.8

–

DS1

Gain Flatness

∆G

Power Added Efﬁciency

3rd Order Intermodulation Distortion

Drain Current

–

-45

3.4

–

add

dBc

-42

–

Note 1

xI xR

4.4

DS2

Channel-Temperature Rise

∆T

°C

–

DS DS

th(c-c)

Note 1: 2 Tone Test (Pout = 28 dBm Single Carrier Level).

Electrical Characteristics (Ta = 25° C)

Characteristic

Trans-conductance

Symbol

Condition

= 3V

Unit

Min.

Typ.

Max

–

2400

-3.5

–

= 4.0A

= 3V

Pinch-off Voltage

-2

-5

GSoff

DSS

= 120mA

= 3V

= 0V

Saturated Drain Current

Gate-Source Breakdown Voltage

Thermal Resistance

–

-5

–

8.0

–

10.4

–

= -120µA

GSO

Channel

to case

°C/W

1.6

2.5

th (c-c)

The information contained here is subject to change without notice.

The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties

which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic

equipments (ofﬁce equipment, communication equipment, measuring equipment, domestic electriﬁcation, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip-

ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, trafﬁc signal, combustion control, all types

of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.

TOSHIBA CORPORATION

MW50250196

1/4

TIM1213-8L

Absolute Maximum Ratings (Ta = 25° C)

Characteristic

Drain-Source Voltage

Symbol

Unit

Rating

-5

Gate-Source Voltage

Drain Current

10.4

Total Power Dissipation (T = 25°C)

˚C

Channel Temperature

Storage Temperature

175

stg

-65~175

Package Outline (2-11C1A)

Handling Precautions for Packaged Type

Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.

2/4

MW50250196

TOSHIBA CORPORATION

TIM1213-8L

RF Performances

TOSHIBA CORPORATION

MW50250196

3/4

TIM1213-8L

Power Dissipation vs. Case Temperature

IM vs. Output Power Characteristics

4/4

MW50250196

TOSHIBA CORPORATION

相关型号：

TIM1213-8ULA

TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power