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TIM5964-16SL-422 [TOSHIBA]

IM3=-45 dBc at Pout= 31.5dBm G1dB=8.0dB(min) at 5.85GHz to 6.75GHz; IM3 = -45 dBc的在噘= 31.5dBm G1dB = 8.0分贝（分钟） ，在5.85GHz到6.75GHz
TIM5964-16SL-422
元器件型号： TIM5964-16SL-422
生产厂家： TOSHIBA SEMICONDUCTOR    TOSHIBA SEMICONDUCTOR
描述和应用：

IM3=-45 dBc at Pout= 31.5dBm G1dB=8.0dB(min) at 5.85GHz to 6.75GHz
IM3 = -45 dBc的在噘= 31.5dBm G1dB = 8.0分贝（分钟） ，在5.85GHz到6.75GHz

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PDF文件： 总4页 (文件大小：162K)
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型号参数：TIM5964-16SL-422参数
 查看货源

TIM5964-16UL

 MICROWAVE POWER GaAs FET

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30 TOSHIBA

TIM5964-16UL

 HIGH POWER P1dB=42.5dBm at 5.9GHz to 6.4GHz

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27 TOSHIBA

TIM5964-16UL_09

 HIGH POWER P1dB=42.5dBm at 5.9GHz to 6.4GHz

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13 TOSHIBA

TIM5964-25UL

 HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz

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31 TOSHIBA

TIM5964-25UL

 MICROWAVE POWER GaAs FET

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22 TOSHIBA

TIM5964-25UL_09

 HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz

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11 TOSHIBA

TIM5964-30SL

 MICROWAVE POWER GaAs FET

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26 TOSHIBA

TIM5964-30UL

 TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power

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0 TOSHIBA

TIM5964-35SL

 TRANSISTOR RF POWER, FET, 2-16G1B, 3 PIN, FET RF Power

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0 TOSHIBA

TIM5964-35SLA

 MICROWAVE POWER GaAs FET

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40 TOSHIBA

TIM5964-35SLA-251

 MICROWAVE POWER GaAs FET TIM5964-35SLA-251

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43 TOSHIBA

TIM5964-35SLA-422

 TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power

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0 TOSHIBA

TIM5964-45SL

 MICROWAVE POWER GaAs FET

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24 TOSHIBA

TIM5964-45SL

 MICROWAVE POWR GaAs FET

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59 TOSHIBA

TIM5964-45SL_06

 MICROWAVE POWER GaAs FET

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24 TOSHIBA
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