TIM6472-45SL [TOSHIBA]

MICROWAVE POWER GaAs FET; 微波功率GaAs FET

TIM6472-45SL


型号：	TIM6472-45SL
厂家：	TOSHIBA SEMICONDUCTOR
描述：	MICROWAVE POWER GaAs FET 微波功率GaAs FET 晶体射频场效应晶体管微波 CD 放大器局域网
文件：	总4页 (文件大小：472K)
下载：	下载PDF数据表文档文件

TIM6472-4L

TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET RF Power

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0 TOSHIBA

TIM6472-4SL

MICROWAVE POWER GaAs FET

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14 TOSHIBA

TIM6472-4UL

MICROWAVE POWER GaAs FET

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27 TOSHIBA

TIM6472-4UL_09

HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz

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18 TOSHIBA

TIM6472-60SL

TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power

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0 TOSHIBA

TIM6472-6UL

HIGH POWER P1dB=38.5dBm at 6.4GHz to 7.2GHz

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24 TOSHIBA

TIM6472-8SL

TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET RF Power

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0 TOSHIBA

TIM6472-8UL

MICROWAVE POWER GaAs FET

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28 TOSHIBA

TIM6472-8UL_09

HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz

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13 TOSHIBA

TIM7179-12UL

HIGH POWER P1dB=41.5dBm at 7.1GHz to 7.9GHz

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28 TOSHIBA

TIM7179-16

TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power

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0 TOSHIBA

TIM7179-16EL

暂无描述

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0 TOSHIBA

TIM7179-16L

TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power

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0 TOSHIBA

TIM7179-16UL

HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz

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56 TOSHIBA

TIM7179-25UL

HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz

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25 TOSHIBA

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