TIM7785-35SL_06 [TOSHIBA]

MICROWAVE POWER GaAs FET; 微波功率GaAs FET

TIM7785-35SL_06


型号：	TIM7785-35SL_06
厂家：	TOSHIBA SEMICONDUCTOR
描述：	MICROWAVE POWER GaAs FET 微波功率GaAs FET 微波
文件：	总4页 (文件大小：517K)
下载：	下载PDF数据表文档文件

TIM7785-45SL

MICROWAVE POWER GaAs FET

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39 TOSHIBA

TIM7785-4SL

TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 2 PIN, FET RF Power

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0 TOSHIBA

TIM7785-4UL

MICROWAVE POWER GaAs FET

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44 TOSHIBA

TIM7785-4UL_09

HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz

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15 TOSHIBA

TIM7785-60SL

MICROWAVE POWER GaAs FET

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69 TOSHIBA

TIM7785-60SL_08

IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level

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27 TOSHIBA

TIM7785-60UL

TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA05A, 2 PIN, FET RF Power

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1 TOSHIBA

TIM7785-6UL

MICROWAVE POWER GaAs FET

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27 TOSHIBA

TIM7785-6UL_09

HIGH POWER P1dB=38.5dBm at 7.7GHz to 8.5GHz

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16 TOSHIBA

TIM7785-8L

TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-11D1B, 2 PIN, FET RF Power

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1 TOSHIBA

TIM7785-8SL

MICROWAVE POWER GaAs FET

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20 TOSHIBA

TIM7785-8UL

MICROWAVE POWER GaAs FET

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34 TOSHIBA

TIM7785-8UL_06

HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz

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9 TOSHIBA

TIM7984-14L

TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power

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0 TOSHIBA

TIM7984-30L

TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power

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0 TOSHIBA

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