TK80A08K3 [TOSHIBA]
TRANSISTOR 80 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power;
| 型号： | TK80A08K3 |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 80 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power 局域网 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TK80A08K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TK80A08K3
Switching Regulator Applications
Unit: mm
•
•
•
•
Low drain-source ON-resistance: R
= 3.6 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 200 S
fs
Low leakage current: I
= 10 μA (max) (V
= 75 V)
DSS
DS
Enhancement mode: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
75
75
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
± 20
80
GSS
DC
(Note 1)
I
D
Drain current
A
Pulse (Note 1)
I
320
40
DP
Drain power dissipation (Tc = 25°C)
P
W
D
AS
AR
1: Gate
2: Drain
3: Source
Single pulse avalanche energy
E
443
mJ
(Note 2)
Avalanche current
I
80
4
A
JEDEC
JEITA
-
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
SC-67
2-10U1B
T
150
ch
TOSHIBA
Weight: 1.7 g (typ.)
Storage temperature range
T
−55 to 150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Internal Connection
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
3.125
62.5
°C/W
°C/W
th (ch-c)
R
th (ch-a)
1
Note 1: Ensure that the channel and lead temperatures do not exceed 150°C.
Note 2: = 25 V, T = 25°C, L = 100 μH, I = 80 A, R = 1 Ω
V
DD
ch
AR
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
1
2008-03-28
TK80A08K3
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±20 V, V = 0 V
Min
Typ.
Max
Unit
I
V
V
⎯
⎯
⎯
⎯
±1
10
⎯
μA
μA
GSS
GS
DS
DS
Drain cut-OFF current
I
= 75 V, V
= 0 V
= 0 V
DSS
GS
GS
GS
V
V
I
I
= 10 mA, V
= 10 mA, V
75
55
2.0
⎯
⎯
(BR) DSS
(BR) DSX
D
D
Drain-source breakdown voltage
V
= -20 V
⎯
⎯
Gate threshold voltage
V
V
V
V
= 10 V, I = 1 mA
⎯
4.0
4.5
⎯
V
mΩ
S
th
DS
GS
DS
D
Drain-source ON-resistance (Note 4)
Forward transfer admittance
Input capacitance
R
= 10 V, I = 40A
3.6
200
8200
770
1140
DS (ON)
⎪Y ⎪
D
= 10 V, I = 40 A
100
⎯
fs
D
C
C
⎯
iss
V
= 10V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
⎯
oss
Rise time
t
r
⎯
⎯
⎯
⎯
⎯
30
55
⎯
⎯
⎯
⎯
⎯
10 V
I = 40 A
D
V
GS
0 V
V
OUT
Turn-ON time
Switching time
t
on
R
L
= 0.75 Ω
ns
Fall time
t
f
33
∼
V
30 V
DD
Duty ≤ 1%, t = 10 μs
w
Turn-OFF time
t
150
175
off
Total gate charge
Qg
(gate-source plus gate-drain)
∼
V
60 V, V
= 10 V, I = 80A
nC
Gate-source charge 1
Q
⎯
⎯
⎯
40
65
80
⎯
⎯
⎯
DD
GS
D
gs1
Gate-drain (“miller”) charge
Gate switch charge
Q
gd
QSW
Note 4: Measured at lead standoff.
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
80
320
−1.2
⎯
A
A
DR
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
I
DRP
V
I
I
= 80 A, V
= 80 A, V
= 0 V
−0.9
60
V
DSF
DR
DR
GS
GS
t
= 0 V,
ns
nC
rr
dI /dt = 50 A/μs
Q
60
⎯
DR
rr
Marking
K80A08K
3
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead (Pb)-Free Finish
2
2008-03-28
TK80A08K3
I
– V
I
– V
DS
D
DS
D
300
250
200
150
100
50
50
40
Common source
Tc = 25°C
Pulse Test
5
Common source
Tc = 25°C
Pulse Test
10
6
5.5
4.8
5.2
10
8
5.2
5
8
5.5
4.6
6
30
20
4.8
4.4
4.2
4.6
4.4
10
0
4.2
V
= 4 V
GS
V
= 4 V
GS
0
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
V
– V
DS GS
GS
200
160
1
Common source
Tc = 25°C
Pulse Test
Common source
= 10 V
V
DS
Pulse Test
0.8
120
80
0.6
0.4
I
= 80 A
D
25
100
40
0
0.2
0
40
20
Tc = −55°C
0
2
4
6
8
10
0
4
8
12
16
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
|Y | – I
fs
R
– I
DS (ON) D
D
1000
100
10
100
10
1
Common source
= 10 V
Common source
Tc = 25°C
25
V
DS
Pulse Test
Pulse Test
Tc = −55°C
100
V
= 10 V
GS
1
0.1
1
10
100
1000
1
10
100
1000
Drain current
I
(A)
Drain current
I
(A)
D
D
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2008-03-28
TK80A08K3
R
− Tc
I
− V
DS
DS (ON)
DR
10
8
1000
Common source
Tc = 25°C
Pulse Test
Common source
= 10 V
Pulse Test
V
GS
300
100
10
40
5
I
= 80 A
D
20
6
4
3
30
10
1
V
= 0
GS
2
0
3
1
−80
−40
0
40
80
120
160
100
160
0
0.4
0.8
1.2
1.6
2.0
Case temperature Tc (°C)
Drain-source voltage
V
(V)
DS
Capacitance – V
V
− Tc
th
DS
100000
10000
5
4
3
2
1
Common source
= 10 V
V
DS
= 1mA
I
D
Pulse Test
C
iss
1000
100
C
oss
Common source
V
= 0 V
GS
C
rss
f =1MHz
Tc = 25°C
0
−80
0.1
1
10
−40
0
40
80
120
160
Drain-source voltage
V
DS
(V)
Case temperature Tc (°C)
Dynamic input / output
characteristics
P
− Tc
D
50
40
30
100
20
Common source
= 80 A
Ta = 25°C
I
D
Pulse Test
80
16
12
8
V
15
DS
60
40
30
V
= 60V
DD
20
10
V
GS
20
0
4
0
0
0
40
80
120
0
60
120
180
240
Case temperature Tc (°C)
Total gate charge
Q
(nC)
g
4
2008-03-28
TK80A08K3
r
th
– t
w
10
1
Duty=0.5
0.2
0.1
0.1
0.05
P
DM
SINGLE PULSE
0.02
t
0.01
0.001
T
0.01
Duty = t/T
R
= 3.125°C/W
th (ch-c)
10μ
100μ
1m
10m
100m
1
10
Pulse width
t
(s)
w
SAFE OPERATING AREA
E
– T
AS
ch
1000
100
10
500
400
300
200
I
max (pulse) *
D
100 μs *
I
max (continuous)
D
1 ms *
DC OPEATION
Tc = 25°C
1
100
0
※ Single pulse Ta = 25℃
0.1
0.01
Curves must be derated
linearly with increase in
temperature.
25
50
75
100
125
150
V
max
DSS
Channel temperature (initial)
T
(°C)
0.1
10
100
1000
1
ch
Drain-source voltage
V
DS
(V)
B
VDSS
20 V
I
AR
0 V
V
V
DD
DS
B
Test circuit
Waveform
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
2
R
V
= 1 Ω
VDSS
G
=
⋅L⋅I ⋅
E
AS
−
V
DD
= 25 V, L = 100 μH
B
VDSS
DD
5
2008-03-28
TK80A08K3
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2008-03-28
相关型号：
TK80X04K3
TRANSISTOR 80 A, 40 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-9F1C, SC-97, 4 PIN, FET General Purpose Power
TOSHIBA
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