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ECE
ISO6720FB-Q1
ISO672x-Q1 General Purpose Reinforced and Basic Dual-Channel Automotive Digital Isolators with Robust EMC
TI
MSYSTEM
MSYSTEM
NUVOTON
STC21K18Q38
Ceramic SMT 6 Pad Clipped Sinewave (VC)TCXO
SUNTSU
SUNTSU
TPS259535DSGT
采用小型 WSON 封装、具有过压保护功能的 2.7V 至 18V、34mΩ、0.5A 至 4A 电子保险丝 | DSG | 8 | -40 to 125
TI
STC21K18F27
Ceramic SMT 6 Pad Clipped Sinewave (VC)TCXO
SUNTSU
TE
SUNTSU
MSYSTEM
KBS-0A-B
Plug-in Signal Conditioners K-UNIT
MSYSTEM
FQP9N50C
功率 MOSFET，N 沟道，QFET®，500 V，9 A，800 mΩ，TO-220
ONSEMI
NANYA
WALSIN
MSYSTEM
FTS-6C-L
Space-saving Plug-in Signal Conditioners F-UNIT
MSYSTEM
FDS8433A
单 P 沟道，2.5V 指定，MOSFET，-20V，-5A，47mΩ
ONSEMI
NUVOTON
SMA5950A
Surface Mount Silicon Zener Diodes
LEIDITECH
WALSIN
NUVOTON
SUNTSU
FDMS7694
N 沟道，PowerTrench® MOSFET，30V，9.5mΩ
ONSEMI
RSJ400N10
电界効果晶体管的MOSFET。提供通过采用细微流程的「针对通信产品的超低阻值的设备」而产生的节能的功率MOSFET，并且结合用途，以多样的小型高功率复合型的产品线对应多种市场需求。
ROHM
PULSE
STC21K18F48
Ceramic SMT 6 Pad Clipped Sinewave (VC)TCXO
SUNTSU
MURATA
PBSS301PD
20 V, 4 A PNP low VCEsat (BISS) transistorProduction
NEXPERIA
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KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
EPCOS
AGILENT
GRAYHILL
ADI
Carling Technologies
RICOH
