TLN115A_07 [TOSHIBA]
Infrared LED GaAs Infrared Emitter; 红外LED砷化镓红外发射器
| 型号： | TLN115A_07 |
| 厂家： | 
TOSHIBA |
| 描述： | Infrared LED GaAs Infrared Emitter |
| 文件： | 总6页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLN115A(F)
TOSHIBA Infrared LED GaAs Infrared Emitter
TLN115A(F)
Lead(Pb)-Free
Unit: mm
Remote−control Systems
•
•
•
High radiant intensity: I = 26mW / sr (typ.)
E
Wide half−angle value: θ1/2 = ±21° (typ.)
Excellent radiant−intensity linearity. Modulation by pulse operation
and high frequency is possible.
•
TPS703(F) pin photodiode with resin to screen out visible light
available as detector for remote control
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Forward current
Symbol
Rating
100
Unit
mA
I
F
Forward current derating
(Ta > 25°C)
ΔI / °C
F
−1.33
mA / °C
Pulse forward current
Reverse voltage
(Note 1)
I
1
A
V
FP
V
P
5
R
D
Power dissipation
150
mW
°C
°C
Operating temperature range
Storage temperature range
T
−20~75
−30~85
opr
TOSHIBA
4−6B6
T
stg
Weight: 0.3 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Pin Connection
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
1. Anode
2. Cathode
1
2
Note 1: Pulse width ≦ 100 μs, repetitive frequency = 100 Hz
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
= 100 mA
F
Min
Typ.
Max
Unit
V
I
—
—
15
19
—
—
—
—
1.35
—
1.5
10
—
—
—
—
—
—
V
F
Reverse current
Radiant intensity
I
V
= 5 V
R
μA
R
TLN115A (F)
26
I
I
= 50 mA
mW / sr
E
F
TLN115A (B,F)
—
Radiant power
P
I
= 50 mA
13
mW
pF
O
F
Capacitance
C
V
= 0, f = 1 MHz
R
20
T
P
Peak emission wavelength
Spectral line half width
λ
I
I
= 50 mA
= 50 mA
950
50
nm
nm
F
F
Δλ
1
θ
Half value angle
I
= 50 mA
—
±21
—
°
F
2
1
2007-10-01
TLN115A(F)
Precautions
Please be careful of the followings.
1. Soldering must be performed under the stopper.
2. Soldering temperature : 260°C max
Soldering time : 5 s max
3. When forming the leads, bend each lead under the 2 mm from the body of the device.
Soldering must be performed after the leads have been formed.
4. Radiant intensity falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in radiant power over time.
The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1.
I (t)
P (t)
O
E
=
I (0) P (0)
E
O
2
2007-10-01
TLN115A(F)
I
– V
(typ.)
F
F
I
F
– Ta
100
120
100
80
60
40
20
0
Ta = 25°C
50
30
10
5
3
1
0.8
0
60
80
100
120
140
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
20
40
Ambient temperature Ta (°C)
Forward voltage
V
F
(V)
I
– V
FP
(typ.)
FP
∆V / ∆Ta – I
F
F
1000
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
500
300
100
50
30
5
50
100
3
10
30
1
10
Forward current
I
F
(mA)
5
3
Pulse width ≦100μs
Repetitive
frequency = 100Hz
Ta = 25°C
I
– P
W
FP
1
3000
1000
1.0
1.6
1.8
2.0
2.2
2.4
2.6
1.2
1.4
Ta = 25°C
Pulse forward voltage
V
(V)
FP
500
300
f = 100Hz
100
10k
5k
2k 1k 500 200
50
30
100μ 300μ
1m
3m
3μ
10μ
30μ
10m
Pulse width
P
W
(s)
3
2007-10-01
TLN115A(F)
I
– I
EP FP
(typ.)
Relative
I
– Ta
(typ.)
E
1000
1.4
1.2
1.0
Pulse width ≦100μs
Repeitive
freqency = 100Hz
Ta = 25°C
I
= 50mA
F
500
300
100
50
30
0.8
0.6
0.4
0.2
0
10
5
3
1
60
80
100
100
10
20
40
-40
-20
0
0.5
0.3
Ambient temperature Ta (°C)
0.1
1
Distance Characteristics
30
100
300
1000
3
10
1000
Pulse forward current
I
(mA)
FP
I
= 200mW / sr at I ~300mA,
FP
EP
f = 100Hz, P = 100μs
W
100
10
1
1
0.1
0.01
0.1
0.001
0.01
I
= 20mW / sr at I ~50mA
F
E
0.0001
0.001
0.01
1
10
0.1
Distance
d
(m)
4
2007-10-01
TLN115A(F)
Wavelength Characteristic (typ.)
Radiation Pattern
(typ.)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
= 50mA
F
Ta = 25°C
(Ta = 25°C)
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
60°
70°
80°
90°
50°
60°
70°
80°
90°
0.4
0.6
0.8
1.0
0
0.2
860
880
900
920
940
960
980
1000
Relative intensity
Wavelength
λ
(nm)
5
2007-10-01
TLN115A(F)
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-10-01
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