TLN201(F) [TOSHIBA]
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| 型号： | TLN201(F) |
| 厂家： | 
TOSHIBA |
| 描述： | 暂无描述 红外LED 光电 |
| 文件： | 总5页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLN201(F)
TOSHIBA Infrared LED GaAℓAs Infrared Emitter
TLN201(F)
Lead(Pb)-Free
Opto−Electronic Switches
Unit: mm
Tape And Card Readers
Equipment Using Infrared Transmission
•
•
•
•
To−18 metal package.
High radiant power: P = 5mW(typ.)
o
High radiant intensity: I = 35mW / sr(typ.)
E
Excellent radiant−intensity linearity. Modulation by pulse operation
and high frequency is possible.
•
•
Highly reliable due to hermetic seal
Same external shape as TPS708(F) photodiode
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Forward current
Symbol
Rating
100
Unit
mA
I
F
Forward current derating
(Ta > 25°C)
ΔI / °C
F
−1
mA / °C
TOSHIBA
4−5Q2
Pulse forward current
Reverse voltage
(Note 1)
I
1
A
V
FP
Weight: 0.33 g (typ.)
V
5
R
Operating temperature range
Storage temperature range
T
−40~125
−55~150
°C
°C
opr
T
stg
Pin Connection
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
1
2
1. Cathode
2. Anode (case)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Pulse width ≦ 100μs,repetitive frequency = 100Hz
Markings
Product No.(TL omitted)
Monthly lot number
N201
Month of manufacture
(January to December denoted by letters A to L respectively)
Year of manufacture
Letter color:red
(last digit of year of manufacture)
1
2007-10-01
TLN201(F)
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
V
I
I
= 50mA
―
―
―
20
―
―
―
―
1.5
5.0
―
1.9
―
10
―
―
―
―
―
V
V
F
F
Pulse forward voltage
Reverse current
V
= 1A
= 5V
FP
FP
I
V
μA
R
R
Radiant intensity
I
I
I
= 50mA
= 50mA
35
5
mW / sr
mW
pF
E
F
F
Radiant power
P
O
Capacitance
C
V
= 0, f = 1MHz
R
17
880
80
T
P
Peak emission wavelength
Spectral line half width
λ
I
I
= 50mA
= 50mA
nm
F
F
Δλ
nm
1
θ
Half value angle
I
= 50mA
―
±7
―
°
F
2
Precautions
Please be careful of the followings.
1. Soldering temperature : 260°C max
Soldering time : 5s max
(Soldering must be performed 1.5m from the bottom of the package.)
2. When forming the leads, bend each lead under the 2mm from the body of the device.
Soldering must be performed after the leads have been formed.
3. Radiant intensity falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in radiant power over time.
The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1.
IE (t) PO (t)
=
IE (0) PO (0)
2
2007-10-01
TLN201(F)
I
– Ta
I
– V
FP
(typ.)
F
FP
1000
120
100
80
60
40
20
0
500
300
100
50
30
0
60
80
100
120
140
20
40
10
Ambient temperature Ta (°C)
5
3
Pulse width ≦100μs
Repetitive
Frequency = 100Hz
Ta = 25°C
I
– V
(typ.)
F
F
1
0
100
3
4
5
6
7
1
2
Pulse forward voltage V (V)
FP
50
30
Ta = 100°C
75
50
25
0
-25
10
5
3
I
E
– I
(typ.)
F
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
3000
1000
Pulse width ≦100μs
Repetitive
Frequency = 100Hz
Ta = 25°C
Forward voltage
V
F
(V)
500
300
Pulse
Wavelength Characteristic
(typ.)
1.0
0.8
0.6
0.4
0.2
0
I
= 50mA
100
F
Ta = 25°C
50
30
10
5
3
DC
1
1
960
1000
880
920
30
100
300
1000
760
800
840
3
10
Wavelength
λ (nm)
Forward current I (mA)
F
3
2007-10-01
TLN201(F)
Radiation Pattern
(typ.)
Relative I – Ta
(typ.)
E
10
5
3
(Ta = 25°C)
0°
10°
10°
20°
20°
30°
30°
40°
40°
1
50°
50°
60°
0.5
0.3
60°
70°
80°
90°
70°
80°
90°
1.0
0.1
-40
0.4
0.6
0.8
-20
0
20
40
60
80
100 120 140
0
0.2
Relative intensity
Ambient temperature Ta (°C)
Coupling Characteristic With
TPS601(F)
100
Ta = 25°C
I
– P
FP
W
50
30
3000
1000
I
= 25.5mW / sr
E
Ta = 25°C
10
500
300
5
3
f = 100Hz
TPS601A(F) using sample
= 226μA
I
L
at V
= 3V
CE
E = 0.1mW / cm2
100
1
10kHz
2kHz
500Hz
200Hz
5kHz
1kHz
50
30
0.5
0.3
d
10
3μ
0.1
1
100μ 300μ
1m
(s)
3m
10μ
30μ
10m
30 50 100
300 500 1000
3
5
10
Pulse width
P
W
Distance d (mm)
4
2007-10-01
TLN201(F)
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2007-10-01
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