TLOE263AP(Q) [TOSHIBA]

Visible LED, T-1 3/4 SINGLE COLOR LED, HIGH INTENSITY ORANGE, 5 mm, PLASTIC, 4-5U1, 2 PIN;
TLOE263AP(Q)
型号: TLOE263AP(Q)
厂家: TOSHIBA    TOSHIBA
描述:

Visible LED, T-1 3/4 SINGLE COLOR LED, HIGH INTENSITY ORANGE, 5 mm, PLASTIC, 4-5U1, 2 PIN

文件: 总4页 (文件大小:111K)
中文:  中文翻译
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TLOE263AP  
TOSHIBA LED Lamp InGaAP Orange Light Emission  
TLOE263AP  
Panel Circuit Indicator  
Unit in mm  
·
·
·
·
·
5.0mm diameter  
InGaAP orange LED  
All plastic mold type.  
Colorless clear lens  
Low drive current, high intensity orange light emission  
Recommended forward current: I =15~20mA(DC)  
F
·
·
·
·
·
·
All plastic molded lens,provides an excellent onoff contrast ratio.  
Fast response time,capable of pulse operation.  
High power luminous intensity  
Without standoffs  
Wide radiation pattern.  
Applications: Suitable for backlighting.  
JEDEC  
EIAJ  
TOSHIBA  
Weight: 0.25 g  
45U1  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Forward current(DC)  
Reverse voltage  
I
50  
4
mA  
V
F
V
P
R
D
Power dissipation  
125  
mW  
°C  
Operating temperature range  
Storage temperature range  
T
-30~85  
-40~120  
opr  
T
°C  
stg  
1
2002-09-25  
TLOE263AP  
Electrical And Optical Characteristics (Ta = 25°C)  
Characteristic  
Forward voltage  
Reverse current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I =20mA  
1.95  
2.4  
50  
V
F
F
I
V =4V  
R
µA  
R
TLOE263AP  
TLOE263AP(PQ)  
47.6  
153  
260  
Luminous  
intensity  
I
I =20mA  
F
(Note)  
mcd  
V
736  
Peak emission wavelength  
Spectral line half width  
Dominant wavelength  
λ
I =20mA  
F
612  
15  
nm  
nm  
nm  
P
∆λ  
I =20mA  
F
λ
I =20mA  
F
605  
d
(Note): Lamps are classified into the following ranks according to their luminous intensity.  
Measurement tolerance for each limit is ±15%.  
M: 56-112mcd, N: 100-200mcd, P: 180-360mcd, Q: 320-640mcd.  
Precaution  
Please be careful of the followings  
Soldering temperature: 260°C max  
·
·
·
Soldering time: 3 s max  
(Soldering portion of lead: Up to 2mm from the body of the device)  
If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to  
the resin. Soldering should be performed after lead forming.  
This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure  
that it will not be affected by this IR light.  
2
2002-09-25  
TLOE263AP  
I
– V  
I – I  
V F  
F
F
1000  
50  
30  
Ta = 25°C  
Ta = 25°C  
500  
300  
10  
100  
50  
30  
5
3
10  
5
3
1
1
3
5
10  
30 50  
100  
(mA)  
300 500  
1.6  
1.7  
1.8  
1.9  
2.0  
2.1  
(V)  
2.2  
Forward voltage  
V
Forward current  
I
F
F
Relative luminous intensity –  
wavelength  
I
Tc  
V
3
1
1.0  
0.8  
0.6  
I
= 20mA  
F
Ta = 25°C  
0.5  
0.3  
0.4  
0.2  
0
0.1  
60  
80  
640  
660  
20  
0
20  
40  
600  
620  
(nm)  
540  
560  
580  
Case temperature Tc (°C)  
Wavelength  
λ
Radiation pattern  
I
Ta  
F
80  
60  
Ta = 25°C  
0°  
10°  
10°  
20°  
20°  
30°  
30°  
40°  
40°  
40  
20  
0
50°  
60°  
70°  
80°  
50°  
60°  
70°  
80°  
90°  
90°  
0
0.2  
0.4 0.6  
0.8  
0
20  
40  
60  
80  
100  
Ambient temperature Ta (°C)  
3
2002-09-25  
TLOE263AP  
RESTRICTIONS ON PRODUCT USE  
000707EAC  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes  
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the  
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with  
domestic garbage.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
4
2002-09-25  

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