TLP1032(F) [TOSHIBA]

Slotted Switch - Logic Output, 5 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH LOGIC OUTPUT, LEAD FREE, 11-14G1, 5 PIN;
TLP1032(F)
型号: TLP1032(F)
厂家: TOSHIBA    TOSHIBA
描述:

Slotted Switch - Logic Output, 5 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH LOGIC OUTPUT, LEAD FREE, 11-14G1, 5 PIN

输出元件 光电
文件: 总9页 (文件大小:166K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TLP1032(F), TLP1033A(F)  
TOSHIBA Photointerrupter Infrared LED + Photo IC  
TLP1032(F), TLP1033A(F)  
Lead-free products  
Domestic electrical appliances such as VTRs and  
CD players  
Office equipment such as photocopiers, printers  
and fax machines  
Vending machines  
Position detectors  
The TLP1032(F)/TLP1033A(F) is a high-withstanding-voltage  
photo-interrupter for digital output. The device combines a  
high-optical-output GaAs infrared LED with a high-sensitivity,  
high-gain Si photo-IC. The photo-IC, which supports a wide range of  
systems (3.3 V to 12 V), enables the device to consume less power  
than conventional devices. The device also features a narrow slit  
width and high resolution.  
The short lead package allows automatic mounting.  
Designed for direct mounting on printed circuit boards  
(positioning pins included)  
TOSHIBA  
11-14G1  
The short lead package allows automatic mounting:  
Lead length of 3.4 ± 0.3 mm  
Weight: 0.6 g (typ.)  
Permissible board thickness: 1.6 mm or less  
Gap: 5 mm  
Resolution: Slit width of 0.5 mm  
Digital output (open-collector)  
TLP1032(F) : Low-level output at shielding  
TLP1033A(F): High-level output at shielding  
Direct connection to logic IC  
Power supply voltage: V  
High-speed response  
= 2.7 V~15 V  
CC  
Detector impermeable to visible light  
Package material: Polybutylene-terephthalate (UL94V-0, black)  
1
2005-01-18  
TLP1032(F), TLP1033A(F)  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Forward current  
I
50  
0.33  
2  
mA  
F
(Ta > 25°C)  
(Ta > 85°C)  
Forward current derating  
I /°C  
F
mA/°C  
Reverse voltage  
V
5
V
V
R
Supply voltage  
V
15  
CC  
Output voltage  
V
15  
V
O
Low-level output current (Ta = T  
)
opr  
I
16  
mA  
°C  
°C  
°C  
OL  
Operating temperature  
T
30~95  
40~100  
260  
opr  
Storage temperature  
T
stg  
Soldering temperature (5 s)  
(Note 1)  
T
sol  
Note 1: Soldering is performed 1.5 mm from the bottom of the package.  
Recommended Operating Conditions  
Characteristic  
LED forward current  
Symbol  
Min  
Typ.  
Max  
Unit  
8
I
F
20  
mA  
(Note 2)  
Supply voltage  
V
2.7  
3.3  
13.2  
13.2  
16  
V
V
CC  
Output voltage  
V
O
Low-level output current  
Operating temperature  
I
mA  
°C  
OL  
T
opr  
25  
95  
Note 2: The value 8 mA allows for a 50% optical fluctuation in the LED. The initial value of the threshold input  
current is 4 mA or less.  
2
2005-01-18  
TLP1032(F), TLP1033A(F)  
Electrical and Optical Characteristics  
(unless otherwise specified: Ta = −30~95°C, V = 2.7~15 V)  
CC  
Characteristic  
Forward voltage  
Symbol  
Test Conditions  
Min  
Typ.  
Max  
Unit  
V
I
= 10 mA, Ta = 25°C  
F
1.00  
1.15  
1.30  
10  
V
µA  
nm  
V
F
Reverse current  
I
R
V = 5 V, Ta = 25°C  
R
Peak emission wavelength  
Operating supply voltage  
λ
I
= 15 mA, Ta = 25°C  
940  
P
F
V
= *1, Ta = 25°C  
= *1  
2.7  
15  
CC  
I
I
I
I
I
1.6  
2.0  
1.1  
1.2  
F
Low-level supply current  
High-level supply current  
I
mA  
mA  
CCL  
F
= *2, Ta = 25°C  
= *2  
F
I
CCH  
F
= 16 mA, I = *1  
OL  
F
0.05  
0.3  
Ta = 25°C  
Low-level output voltage  
V
V
OL  
I
I
= 16 mA, I = *1  
0.4  
6.3  
3
OL  
F
High-level output current  
I
= *2, V = 15 V  
µA  
OH  
F
O
Peak sensitivity wavelength  
λ
Ta = 25°C  
Ta = 25°C  
900  
nm  
P
L H threshold input current  
H L threshold input current  
Hysteresis  
I
I
TLP1032(F)  
mA  
mA  
FLH  
4
Ta = 25°C  
3
TLP1033A(F)  
FHL  
4
TLP1032(F)  
TLP1033A(F)  
TLP1032(F)  
TLP1033A(F)  
TLP1032(F)  
TLP1033A(F)  
TLP1032(F)  
TLP1033A(F)  
TLP1032(F)  
TLP1033A(F)  
0.67  
1.5  
9
I
/I  
FHL FLH  
Propagation delay time (L H)  
Propagation delay time (H L)  
Rise time  
t
t
pLH  
pHL  
15  
15  
9
V
I
R
= 3.3 V  
CC  
= 15 mA  
F
L
µs  
= 10 kΩ  
0.02  
0.8  
0.8  
0.02  
0.5  
3
Ta = 25°C  
t
r
t
f
3
Fall time  
0.5  
*1  
*2  
0 mA for the TLP1032(F); 15 mA for the TLP1033A(F).  
15 mA for the TLP1032(F); 0 mA for the TLP1033A(F).  
3
2005-01-18  
TLP1032(F), TLP1033A(F)  
Note 3: The switching time measurement circuit and waveform are as follows:  
TLP1032(F)  
50%  
Constant-voltage  
circuit  
V
V
= 3.3 V  
I
F
CC  
t
t
pHL  
pLH  
R
L
I
F
V
OH  
90%  
OUT  
V
Amp  
OUT  
1.5 V  
10%  
V
OL  
t
t
f
r
TLP1033A(F)  
50%  
Constant-voltage  
circuit  
V
V
= 3.3 V  
I
F
CC  
t
t
pLH  
pHL  
R
L
I
F
V
OH  
90%  
10%  
OUT  
V
OUT  
Amp  
1.5 V  
V
OL  
t
t
r
f
Markings  
Monthly lot number  
Month of manufacture (January to December denoted by the letters A to L respectively)  
Year of manufacture (the last digit of the year of manufacture)  
Precautions  
When removing flux with chemicals after soldering, clean only the soldered part of the leads. Do not immerse the  
entire package in the cleaning solvent. Chemical residue on the LED emitter or the photodetector inside the photo-IC  
case may adversely affect the optical characteristics of the device and may drastically reduce the threshold input  
current.  
The case is made of polybutylene-terephthalate. Oil or chemicals may cause the package to melt or crack. Care  
should be taken regarding the environment in which the device is to be installed.  
Mount the device on a level surface.  
Output fluctuates for 100 µs after power-on while the internal circuit stabilizes.  
To stabilize the power line, insert a bypass capacitor of up to 0.01 µF between V  
and GND, close to the device.  
CC  
The threshold input current increases over time due to current flowing in the infrared LED. The design of circuits that  
are to incorporate the device must take into account the change in threshold input current over time. The change in  
threshold input current is equal to the reciprocal of the change in LED infrared optical output.  
1  
P
(t)  
I
I
(t)  
(0)  
FHL  
FHL  
O
=
P
O
(0)  
Choose a high-quality shutter material that is impermeable to light. If the material is of inferior quality, light from the  
LED may pass through the shutter, causing the device to malfunction.  
4
2005-01-18  
TLP1032(F), TLP1033A(F)  
Package Dimensions: TOSHIBA 11-14G1  
Unit: mm  
Abbreviation  
Type  
P1032  
1033A  
TLP1032(F)  
TLP1033A(F)  
( ): reference value  
Weight: 0.6 g (typ.)  
Pin Connections  
TLP1032(F)  
TLP1033A(F)  
Constant-voltage  
3
Constant-voltage  
circuit  
3
circuit  
4
4
5
1
2
1
2
Amp  
Amp  
5
1: Anode  
2: Cathode  
3: V  
CC  
4: OUT  
5: GND  
5
2005-01-18  
TLP1032(F), TLP1033A(F)  
I
Ta  
I
– V  
F
(typ.)  
(typ.)  
(typ.)  
F
F
60  
50  
40  
30  
20  
10  
0
100  
50  
30  
10  
5
3
Ta = 75°C 50 25  
0
25  
1
0.8  
20  
0
20  
40  
60  
80  
100  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
Ambient temperature Ta (°C)  
Forward voltage  
V
(V)  
F
V
OL  
– I  
OL  
(typ.)  
t
, t  
– I  
pLH pHL F  
0.1  
10  
8
Ta = 25°C  
Ta = 25°C  
V
= 3.3 V  
V
= 3.3 V  
R = 10 kΩ  
L
CC  
CC  
0.05  
0.03  
I
= 15 mA (TLP1033A(F))  
F
I
= 0  
(TLP1032(F))  
t (TLP1032(F))  
pHL  
F
t
pLH (TLP1033A(F))  
6
0.01  
4
0.005  
2
t
t
pLH (TLP1032(F))  
pHL (TLP1033A(F))  
0.003  
0.002  
0.3 0.5  
1
3
5
10  
(mA)  
30  
0
0
10  
20  
30  
40  
(mA)  
50  
60  
Low-level output current  
I
OL  
Forward current  
I
F
t , t – R  
r
(typ.)  
t
, t  
– R  
f
L
pLH pHL L  
20  
9
8
7
6
5
4
3
2
1
Ta = 25°C  
Ta = 25°C  
t
pLH  
10  
V
CC  
= 3.3 V  
V
CC  
= 3.3 V  
t
pHL  
5
3
I
F
= 15 mA  
I
F
= 15 mA  
t
t
(TLP1032(F))  
f
1
r (TLP1033A(F))  
0.5  
0.3  
(TLP1032(F))  
(TLP1033A(F))  
0.1  
t
t
(TLP1032(F))  
r
0.05  
0.03  
(TLP1032(F))  
f (TLP1033A(F))  
(TLP1033A(F))  
0.01  
0.1  
0
0.1  
0.3 0.5  
1
3
5
10  
30 50 100  
300 500  
0.3 0.5  
1
3
5
10  
(k)  
30 50 100  
Load resistance  
R
(k)  
Load resistance R  
L
L
6
2005-01-18  
TLP1032(F), TLP1033A(F)  
TLP1032(F) Detection position  
characteristic (1)  
TLP1032(F) Detection position  
characteristic (2)  
(typ.)  
(typ.)  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
Ta = 25°C  
= 3.3 V  
V
CC  
= 10 kΩ  
Ta = 25°C  
R
L
V
R
= 3.3 V  
= 10 kΩ  
CC  
L
I
F
= 20 mA  
Shutter  
I
F
= 20 mA  
0
+
d
d
Shutter  
Detection position  
+1.25  
mm  
1.35  
Detection position  
d = 0 ± 0.3 mm  
d
7.95  
=
0.4  
0.2  
0
0.2  
0.4  
0.6  
0.8  
7.0  
7.2  
7.4  
7.6  
7.8  
(mm)  
8.0  
8.2  
Distance  
d
(mm)  
Distance  
d
TLP1033A(F) Detection position  
characteristic (1)  
TLP1033A(F) Detection position  
characteristic (2)  
(typ.)  
(typ.)  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
Ta = 25°C  
= 3.3 V  
V
CC  
= 10 kΩ  
Ta = 25°C  
R
L
V
R
= 3.3 V  
CC  
= 10 kΩ  
I
F
= 20 mA  
L
Shutter  
I
F
= 20 mA  
0
+
d
d
Shutter  
Detection position  
+1.25  
mm  
1.35  
Detection position  
d = 0 ± 0.3 mm  
d
7.95  
=
0.4  
0.2  
0
0.2  
0.4  
0.6  
0.8  
7.0  
7.2  
7.4  
7.6  
7.8  
(mm)  
8.0  
8.2  
Distance  
d
(mm)  
Distance  
d
7
2005-01-18  
TLP1032(F), TLP1033A(F)  
Relative Positioning of Shutter and Device  
For normal operation, position the shutter and the device as shown in the figure below. Take into account the detection  
direction characteristic and switching time of the device in determining the shutter slit width and pitch.  
Shutter  
A
A’  
Unit: mm  
Center of sensor  
Cross section between A and A’  
8
2005-01-18  
TLP1032(F), TLP1033A(F)  
RESTRICTIONS ON PRODUCT USE  
030619EAC  
The information contained herein is subject to change without notice.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,  
cut, crush or dissolve chemically.  
9
2005-01-18  

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