TLP121(GR) [TOSHIBA]

Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, DIP-4;
TLP121(GR)
型号: TLP121(GR)
厂家: TOSHIBA    TOSHIBA
描述:

Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, DIP-4

输出元件 光电
文件: 总9页 (文件大小:184K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TLP121  
TOSHIBA Photocoupler GaAs Ired & PhotoTransistor  
TLP121  
Office Machine  
Unit in mm  
Programmable Controllers  
AC / DCInput Module  
Telecommunication  
The TOSHIBA mini flat coupler TLP121 is a small outline coupler,  
suitable for surface mount assembly.  
TLP121 consists of a photo transistor, optically coupled to a gallium  
arsenide infrared emitting diode.  
l Collectoremitter voltage: 80V (min.)  
l Current transfer ratio: 50% (min.)  
Rank GB: 100% (min.)  
l Isolation voltage: 3750Vrms (min.)  
l UL recognized: UL1577, file no. E67349  
Pin Configurations (top view)  
TOSHIBA  
114C1  
Weight: 0.09g  
1
3
6
4
1: Anode  
3: Cathode  
4: Emitter  
6: Collector  
1
2002-09-25  
TLP121  
Current Transfer Ratio  
Current Transfer  
Ratio (%)  
(I / I )  
C
F
Classification  
Type  
*1  
Marking Of Classification  
I
= 5mA, V = 5V, Ta = 25°C  
CE  
F
Min.  
Max.  
(None)  
Rank Y  
50  
50  
600  
150  
300  
600  
600  
BLANK, Y, Y , G, G , B, B , GB  
Y, Y  
TLP121  
Rank GR  
100  
200  
100  
G, G  
B, B  
Rank GB  
G, G , B, B , GB  
*1: Ex, rank GB: TLP121 (GB)  
Note: Application type name for certification test, please use standard product type name, i, e.  
TLP121 (GB): TLP121  
2
2002-09-25  
TLP121  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Forward current  
I
50  
mA  
mA / °C  
A
F
Forward current derating  
Pulse forward current  
Reverse voltage  
I / °C  
F
-0.7 (Ta 53°C)  
I
1 (100µs pulse, 100pps)  
FP  
V
5
125  
80  
7
V
R
Junction temperature  
Collector-emitter voltage  
Emitter-collector voltage  
Collector current  
T
°C  
j
V
V
CEO  
ECO  
V
V
I
50  
150  
mA  
mW  
C
Collector power dissipation  
P
C
Collector power dissipation  
P / °C  
-1.5  
mW / °C  
C
derating (Ta 25°C)  
Junction temperature  
Storage temperature range  
Operating temperature range  
Lead soldering temperature  
Total package power dissipation  
T
125  
°C  
°C  
j
T
-55~125  
-55~100  
260 (10s)  
200  
stg  
opr  
T
°C  
T
°C  
sol  
P
mW  
T
Total package power dissipation  
P / °C  
-2.0  
mW / °C  
Vrms  
T
derating (Ta 25°C)  
Isolation voltage  
(Note 1)  
BV  
3750 (AC, 1min., R.H. 60%)  
S
(Note 1) Device considered a two terminal device: Pins1, 3 shorted together and pins 4, 6 shorted together  
Recommended Operating Conditions  
Characteristic  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Supply voltage  
Forward current  
Collector current  
V
5
16  
1
48  
20  
10  
85  
V
CC  
I
mA  
mA  
°C  
F
I
C
Operating temperature  
T
-25  
opr  
3
2002-09-25  
TLP121  
Individual Electrical Characteristics (Ta = 25°C)  
Characteristic  
Forward voltage  
Symbol  
Test Condition  
= 10 mA  
F
Min.  
Typ.  
Max.  
Unit  
V
I
1.0  
1.15  
1.3  
10  
V
F
Reverse current  
Capacitance  
I
V
= 5 V  
R
µA  
pF  
R
C
T
V = 0, f = 1 MHz  
30  
Collector-emitter  
V
V
I
I
= 0.5 mA  
= 0.1 mA  
80  
7
V
V
(BR) CEO  
(BR) ECO  
C
E
breakdown voltage  
Emitter-collector  
breakdown voltage  
V
V
= 48 V  
10  
2
100  
50  
nA  
µA  
CE  
CE  
Collector dark current  
I
CEO  
= 48 V, Ta = 85°C  
Capacitance  
C
CE  
V = 0, f = 1 MHz  
10  
pF  
(collector to emitter)  
Coupled Electrical Characteristics (Ta = 25°C)  
Characteristic  
Current transfer ratio  
Symbol  
/ I  
Test Condition  
MIn.  
Typ.  
Max.  
Unit  
%
50  
100  
60  
0.2  
1
600  
600  
I
I
= 5 mA, V = 5 V  
F
F
CE  
I
C
F
Rank GB  
= 1 mA, V = 0.4 V  
CE  
Saturated CTR  
I
/ I  
%
C
V
F (sat)  
Rank GB  
30  
I
I
= 2.4 mA, I = 8 mA  
F
0.4  
C
C
Collector-emitter  
V
CE (sat)  
= 0.2 mA, I = 1 mA  
F
saturation voltage  
Rank GB  
0.4  
10  
Off-state collector current  
I
V
= 0.7V, V = 48 V  
CE  
µA  
C (off)  
F
Isolation Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min.  
Typ.  
0.8  
Max.  
Unit  
Capacitance (input to output)  
Isolation resistance  
C
R
V
V
= 0, f = 1 MHz  
pF  
S
S
S
10  
14  
= 500 V, R.H. 60%  
5×10  
3750  
10  
S
AC, 1 minute  
Vrms  
Vdc  
Isolation voltage  
BV  
S
AC, 1 second, in oil  
DC, 1 minute, in oil  
10000  
10000  
4
2002-09-25  
TLP121  
Switching Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
µs  
Rise time  
t
2
3
r
Fall time  
t
f
V
= 10 V, I = 2 mA  
C
CC  
R = 100Ω  
L
Turn-on time  
Turn-off time  
Turn-on time  
Storage time  
Turn-off time  
t
t
3
on  
off  
3
t
2
ON  
R = 1.9 kΩ  
(Fig.1)  
L
CC  
µs  
t
25  
40  
s
V
= 5 V, I = 16 mA  
F
t
OFF  
Fig. 1  
IF  
Switching time test circuit  
IF  
VCC  
VCE  
ts  
RL  
VCC  
4.5V  
0.5V  
VCE  
tON  
tOFF  
5
2002-09-25  
TLP121  
I
Ta  
P – Ta  
C
F
100  
80  
200  
160  
120  
60  
40  
20  
0
80  
40  
0
100  
120  
-20  
100  
120  
40  
60  
80  
40  
60  
80  
0
20  
0
20  
-20  
Ambient temperature Ta (°C)  
Ambient temperature Ta (°C)  
I
– D  
I
– V  
F
FP  
R
F
100  
3000  
1000  
Ta = 25°C  
Pulse width 100ms  
50  
30  
Ta = 25°C  
500  
300  
10  
5
3
100  
50  
30  
1
0.5  
0.3  
10  
3
100  
3
2
1
-
-
-
10  
3
10  
3
10  
3
Duty cycle ratio  
D
R
0.1  
1.6  
1.8  
0.6  
1.2  
1.4  
F
0.8  
1.0  
Forward voltage  
V
(V)  
DV / DTa – I  
I
– V  
FP  
F
F
FP  
-3.2  
-2.8  
1000  
500  
300  
-2.4  
-2.0  
-1.6  
100  
50  
30  
10  
-1.2  
Pulse width 10ms  
Repetitive  
Frequency = 100Hz  
Ta = 25°C  
5
3
-0.8  
-0.4  
1
0.1  
0.3 0.5  
1
3
5
10  
30 50  
0.6  
2.2  
2.6  
3.0  
1.8  
1.0  
1.4  
Forward current  
I
(mA)  
Pulse forward voltage  
V
(V)  
F
FP  
6
2002-09-25  
TLP121  
I
– V  
I – V  
C CE  
C
CE  
50  
40  
30  
20  
Ta = 25°C  
Ta = 25°C  
I
= 50mA  
F
50mA  
30mA  
40mA  
30mA  
20mA  
15mA  
20mA  
10mA  
30  
20  
10  
10mA  
P
C(MAX)  
10  
0
5mA  
2mA  
I
= 5mA  
F
0
0
0.6  
0.8  
1.0  
6
8
10  
2
4
0.2  
0.4  
0
Collector–emitter voltage  
V
(V)  
CE  
Collector–emitter voltage  
V
(V)  
CE  
I
– I  
I
Ta  
CEO  
C
F
101  
100  
100  
50  
Ta = 25°C  
30  
10  
SAMPLE A  
5
3
V
CE  
= 48V  
SAMPLE B  
1
-
1
10  
24V  
10V  
V
V
V
= 10V  
= 5V  
= 0.4V  
CE  
CE  
CE  
0.5  
0.3  
5V  
0.1  
0.3 0.5  
2
-
10  
10  
1
3
5
10  
30 50  
100  
Forward current  
I
(mA)  
F
3
-
I
/ I – I  
F
C
F
4
-
1000  
10  
Ta = 25°C  
V
V
V
= 10V  
= 5V  
= 0.4V  
CE  
CE  
CE  
100  
120  
0
20  
40  
60  
80  
Ambient temperature Ta (°C)  
500  
300  
SAMPLE A  
100  
SAMPLE B  
50  
30  
0.3 0.5  
1
3
5
10  
30 50  
100  
Forward current  
I
(mA)  
F
7
2002-09-25  
TLP121  
V
Ta  
I
Ta  
C
CE(sat)  
0.24  
0.20  
0.16  
0.12  
0.08  
100  
I
I
= 5mA  
= 1mA  
V
CE  
= 5V  
F
c
50  
30  
I
F = 25mA  
10mA  
5mA  
10  
5
3
0.04  
0
80  
100  
20  
40  
60  
-20  
0
-40  
Ambient temperature Ta ()  
1mA  
1
0.5  
0.3  
0.5mA  
Switching Time – RL  
1000  
500  
Ta = 25°C  
I
V
= 16mA  
= 5V  
F
0.1  
100  
40  
60  
80  
0
20  
-20  
CC  
t
OFF  
300  
100  
Ambient temperature Ta ()  
50  
30  
t
s
10  
5
3
t
ON  
1
50  
100  
10  
30  
1
3
5
Load resistance  
R
L
(kW)  
8
2002-09-25  
TLP121  
RESTRICTIONS ON PRODUCT USE  
000707EBC  
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety  
in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such  
TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
·
Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes  
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the  
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with  
domestic garbage.  
·
·
The products described in this document are subject to the foreign exchange and foreign trade laws.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights  
of the third parties which may result from its use. No license is granted by implication or otherwise under any  
intellectual property or other rights of TOSHIBA CORPORATION or others.  
·
The information contained herein is subject to change without notice.  
9
2002-09-25  

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