TLP131(GB-L) [TOSHIBA]
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SO-5;
| 型号： | TLP131(GB-L) |
| 厂家： | 
TOSHIBA |
| 描述： | Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SO-5 晶体 光电 晶体管 光电晶体管 输出元件 |
| 文件： | 总9页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP131
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP131
Unit in mm
Office Machine
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP131 is a small outline coupler,
suitable for surface mount assembly.
TLP131 consists of a photo transistor, optically coupled to a gallium
arsenide infrared emitting diode.
•
•
Collector−emitter voltage: 80V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
•
•
Isolation voltage: 3750Vrms (min.)
UL recognized: UL1577, file No. E67349
TLP131 base terminal is for the improvement of speed, reduction of dark
current, and enable operation.
TOSHIBA
11−4C2
Weight: 0.09 g
Pin Configurations (top view)
1
3
6
5
4
1 : Anode
3 : Cathode
4 : Emitter
5 : Collector
6 : Base
1
2007-10-01
TLP131
Current Transfer Ratio
Current Transfer
Ratio (%)
(I / I )
C
F
Type
Classification
Marking Of Classification
I
= 5mA, V = 5V, Ta = 25°C
CE
F
Min.
Max.
600
150
300
600
(None)
Rank Y
50
BLANK, Y, Y■, G, G■, B, B■, GB
50
Y, Y■
TLP131
Rank GR
Rank GB
100
100
G, G■
G, G■, B, B■, GB
Note: Application type name for certiffication test,please use standard product type name,i.e.
TLP131(GB): TLP131
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
50
−0.7
1
mA
mA / °C
A
F
Forward current derating (Ta≥53°C)
Peak forward current (100μs pulse,100pps)
Reverse voltage
ΔI / °C
F
I
FP
V
5
V
R
Junction temperature
T
125
80
°C
j
Collector−emitter voltage
V
V
CEO
CBO
ECO
EBO
Collector−base voltage
V
V
V
80
V
Emitter−collector voltage
7
V
Emitter−base voltage
7
V
Collector current
I
50
mA
mA
mW
mW / °C
°C
C
Peak collector current (10ms pulse,100pps)
Power dissipation
I
100
150
−1.5
125
−55~125
−55~100
260
200
−2.0
3750
CP
P
C
Power dissipation derationg (Ta ≥ 25°C)
Junction temperature
ΔP / °C
C
T
j
Storage temperature range
Operating temperature range
Lead soldering temperature (10s)
Total package power dissipation
Total package power dissipation derating (Ta ≥ 25°C)
T
°C
stg
opr
T
°C
T
°C
sol
P
mW
mW / °C
Vrms
T
ΔP / °C
T
Isolation voltage (AC, 1min., RH≤ 60%)
(Note 1)
BV
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted
together.
2
2007-10-01
TLP131
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Forward current
Collector current
V
―
―
5
16
1
48
25
10
85
V
CC
I
mA
mA
°C
F
I
―
C
Operating temperature
T
opr
−25
―
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
= 10 mA
F
Min.
Typ.
Max.
Unit
V
I
1.0
―
1.15
―
1.3
10
―
V
F
Reverse current
Capacitance
I
V
= 5 V
R
μA
pF
R
C
V = 0, f = 1 MHz
―
30
T
Collector−emitter
V
V
I
I
= 0.5mA
= 0.1mA
80
7
―
―
―
―
V
V
(BR)CEO
(BR)ECO
C
E
breakdown voltage
Emitter−collector
breakdown voltage
Collector−base breakdown voltage
Emitter−base breakdown voltage
V
V
I
I
= 0.1mA
= 0.1mA
80
7
―
―
10
2
―
―
V
V
(BR)CBO
C
E
(BR)EBO
V
V
= 48V
―
―
100
50
nA
μA
CE
CE
collector dark current
Collector dark current
I
CEO
= 48V,Ta = 85°C
V
R
= 48V,Ta = 85°C
CE
I
―
0.5
10
μA
CER
= 1MΩ
BE
Collector dark current
I
V
V
= 10V
―
―
―
0.1
400
10
―
―
―
nA
―
CBO
CB
CE
DC forward current gain
Capacitance (collector to emitter)
h
= 5V,I = 0.5mA
C
FE
CE
C
V = 0, f = 1MHz
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
%
50
100
―
―
―
60
―
10
―
0.2
―
1
600
600
―
I
I
= 5 mA, V = 5 V
CE
F
F
Current transfer ratio
I / I
C F
Rank GB
= 1 mA, V = 0.4 V
CE
Saturated CTR
I
/ I
%
C
V
F (sat)
Rank GB
30
―
―
Base photo−current
I
I
I
= 5mA,V = 5V
CB
―
μA
PB
F
= 2.4 mA, I = 8 mA
F
―
0.4
―
C
Collector−emitter
saturation voltage
V
―
CE (sat)
I
I
= 0.2 mA, I = 1 mA
F
C
F
Rank GB
―
0.4
10
Off−state collector current
I
= 0.7mA, V
= 48 V
CE
―
μA
C (off)
3
2007-10-01
TLP131
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= 0, f = 1 MHz
Min.
Typ.
Max.
Unit
Capacitance (input to output)
Isolation resistance
C
R
V
V
―
5×1010
3750
―
0.8
1014
―
―
―
―
―
pF
S
S
S
S
= 500 V
Ω
AC, 1 minute
―
Vrms
Vdc
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
10000
10000
―
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Rise time
t
―
―
―
―
―
―
―
―
―
―
2
3
―
―
―
―
―
―
―
―
―
―
r
Fall time
t
f
V
= 10 V, I = 2 mA
C
CC
R = 100Ω
μs
L
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
Turn−on time
Storage time
Turn−off time
t
t
3
on
off
3
t
2
ON
R = 1.9 kΩ%)
R
V
(Fig.1)
(Fig.1)
L
BE
CC
= OPEN
μs
μs
t
25
40
2
s
= 5 V, I = 16 mA
F
t
OFF
t
ON
R = 1.9 kΩ%)
R
V
L
BE
CC
= 220 kΩ
t
20
30
s
= 5 V, I = 16 mA
F
t
OFF
Fig. 1 Switching time test circuit
IF
VCC
VCE
IF
t
S
RL
VCC
VCE
4.5V
0.5V
RBE
tON
tOFF
4
2007-10-01
TLP131
I
– Ta
P – Ta
C
F
100
80
200
160
120
60
40
20
0
80
40
0
100
120
−20
100
120
40
60
80
40
60
80
0
20
0
20
−20
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
– D
I
– V
F
FP
R
F
100
3000
1000
Ta = 25°C
Pulse width ≦ 100μs
50
30
Ta = 25°C
500
300
10
5
3
100
50
30
1
0.5
0.3
10
3
3
2
1
10−
3
10−
3
10−
3
100
0.1
0.6
Duty cycle ratio
D
R
1.6
1.8
1.2
1.4
F
0.8
1.0
Forward voltage
V
(V)
ΔV / ΔTa – I
I
– V
FP
F
F
FP
−3.2
−2.8
1000
500
300
−2.4
−2.0
−1.6
100
50
30
10
−1.2
−0.8
−0.4
Pulse width ≦ 10μs
Repetitive
5
3
Frequency = 100Hz
Ta = 25°C
1
0.1
0.3 0.5
1
3
5
10
30 50
2.2
FP
2.6
3.0
1.8
1.0
1.4
Forward current
I
(mA)
F
Pulse forward voltage
V
(V)
5
2007-10-01
TLP131
I
– V
I – V
C CE
C
CE
50
40
30
30
20
Ta = 25°C
Ta = 25°C
I
= 50mA
F
50mA
30mA
20mA
15mA
40mA
30mA
20mA
10mA
10mA
P
C(MAX.)
20
10
I
= 5mA
10
0
5mA
2mA
F
0
0
6
8
10
2
4
0
0.6
0.8
1.0
0.2
0.4
Collector–emitter voltage
V
(V)
Collector–emitter voltage
V
(V)
CE
CE
I
– I
F
I
/ I – I
F
C
C
F
1000
100
50
V
V
V
= 10V
= 5V
Ta = 25°C
Ta = 25°C
CE
CE
CE
30
= 0.4V
500
300
10
SAMPLE A
SAMPLE A
5
3
SAMPLE B
100
50
1
V
= 10V
= 5V
CE
CE
CE
SAMPLE B
0.5
0.3
V
V
= 0.4V
0.1
0.3 0.5
0.3 0.5
1
3
5
10
30 50
100
1
3
5
10
30 50
100
Forward current
I
F
(mA)
Forward current
I
(mA)
F
I
– I at R
F BE
I
– I
PB F
C
100
300
100
Ta = 25°C
Ta = 25°C
50
30
V
= 5V
CE
I
V
CB
F
30
10
V
V
= 0V
= 5V
CB
CB
A
5
3
10
3
V
CC
I
F
A
1
1
0.5
0.3
50kΩ
= ∞ 500kΩ 100kΩ
R
BE
0.3
0.1
0.1
0.1
0.3 0.5
1
3
5
30 50 100
0.1
0.3 0.5
1
3
5
10
30 50 100
10
Forward current
I
(mA)
Forward current
I
(mA)
F
F
6
2007-10-01
TLP131
I
– Ta
CEO
V
– Ta
CE(sat)
101
0.24
0.20
0.16
I
I
= 5mA
= 1mA
F
c
100
0.12
0.08
V
= 48V
24V
CE
10V
5V
1
10−
0.04
0
2
3
4
10−
10−
10−
80
100
20
40
60
−20
0
−40
Ambient temperature Ta (℃)
100
120
60
80
0
20
40
Ambient temperature Ta (℃)
I
– Ta
Switching Time – RL
C
100
Ta = 25℃
V
= 5V
CE
300
100
I
= 16mA
F
V
= 5V
CC
50
30
I
= 25mA
10mA
F
R
BE
= 220kΩ
5mA
10
50
30
t
OFF
5
3
t
s
10
1mA
1
5
3
0.5
0.3
0.5mA
t
ON
0.1
1
1
100
3
5
10
30
50
100
40
60
80
0
20
-20
Load resistance
R
L
(kΩ)
Ambient temperature Ta (℃)
7
2007-10-01
TLP131
Switching Time – R
Switching Time – R
L
BE
1000
1000
500
Ta = 25℃
= 16mA
Ta = 25°C
= 16mA
I
F
I
F
V
= 5V
CC
500
300
V
= 5V
CC
R
L
= 1.9kΩ
t
OFF
300
100
100
t
OFF
t
s
50
30
50
30
t
s
10
10
5
3
5
3
t
ON
t
ON
1
100k
1
1
∞
50
100
1M
3M
10
30
300k
3
5
Base-emitter resistance
R
BE
(Ω)
Load resistance
R
L
(Ω)
8
2007-10-01
TLP131
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
9
2007-10-01
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