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TLP181FT [TOSHIBA]

Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, MINIFLAT, 11-4C1, SOP-6/4;
TLP181FT
型号： TLP181FT
厂家： TOSHIBA    TOSHIBA
描述：

Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, MINIFLAT, 11-4C1, SOP-6/4

晶体 光电 二极管 晶体管 光电晶体管 输出元件
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TLP181  
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor  
TLP181  
Office Machine  
Unit in mm  
Programmable Controllers  
AC / DC−Input Module  
Telecommunication  
The TOSHIBA mini flat coupler TLP181 is a small outline coupler,  
suitable for surface mount assembly.  
TLP181 consist of a photo transistor optically coupled to a gallium  
arsenide infrared emitting diode.  
·
·
Collector−emitter voltage: 80V (min.)  
Current transfer ratio: 50% (min.)  
Rank GB: 100% (min.)  
·
·
Isolation voltage: 3750Vrms (min.)  
UL recognized: UL1577,  
file no. E67349  
Option (V4) type  
·
VDE approved: VDE0884 satisfied  
Maximum operating insulation voltage: 565VPK  
Highest permissible over voltage: 6000VPK  
TOSHIBA  
11−4C1  
Weight: 0.09 g  
Pin Configuration (top view)  
1
3
6
4
1: Anode  
3: Cathode  
4: Emitter  
6: Collector  
1
2002-09-25  
TLP181  
Current Transfer Ratio  
Current Transfer Ratio (%)  
(I / I )  
C
F
Classification  
I
= 5mA, V = 5V, Ta = 25°C  
CE  
Type  
*1  
F
Marking Of Classification  
Min.  
Max.  
■
■
■
(None)  
Rank Y  
50  
50  
600  
150  
300  
600  
600  
BLANK, Y, Y , G, G , B, B , GB  
■
Y, Y  
■
TLP181  
Rank GR  
Rank BL  
Rank GB  
100  
200  
100  
G, G  
■
B, B  
■
■
G, G , B, B , GB  
*1: EX, Rank GB: TLP181 (GB)  
(Note) Application, type name for certification test, please use standard product type name, i, e.  
TLP181 (GB): TLP181  
2
2002-09-25  
TLP181  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Forward current  
I
50  
mA  
F
Forward current detating  
∆I / °C  
F
-0.7 (Ta ≥ 53°C)  
mA / °C  
Pulse forward current  
(100µs pulse, 100pps)  
I
1
A
FP  
Reverse voltage  
V
5
125  
80  
7
V
°C  
V
R
Junction temperature  
Collector-emitter voltage  
Emitter-collector valtage  
Collector current  
T
j
V
CEO  
ECO  
V
V
I
50  
mA  
C
Collector power dissipation  
(1 Circuit)  
P
150  
mW  
C
Collector power dissipation  
∆P / °C  
-1.5  
mW / °C  
C
derating (1 Circuit Ta ≥ 25°C)  
Junction temperature  
Storage temperature range  
Operating temperature range  
Lead soldering temperature  
Total package power dissipation  
T
125  
°C  
°C  
j
T
-55~125  
-55~100  
260 (10s)  
200  
stg  
opr  
T
°C  
T
°C  
sol  
P
mW  
T
Total package power dissipation  
∆P / °C  
-2.0  
mW / °C  
T
derating (Ta ≥ 25°C)  
Isolation voltage  
BV  
S
3750  
V
rms  
(AC, 1min., R.H. ≤ 60%)  
(Note 1)  
(Note 1) Device considered a two-terminal device: Pin1, 3 shorted together and pins 4, 6 shorted together  
Recommended Operating Conditions  
Characteristic  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Supply voltage  
Forward current  
Collector current  
V
―
―
5
16  
1
48  
20  
10  
85  
V
CC  
I
mA  
mA  
°C  
F
I
―
C
Operating temperature  
T
-25  
―
opr  
3
2002-09-25  
TLP181  
Individual Electrical Characteristics (Ta = 25°C)  
Characteristic  
Forward voltage  
Symbol  
Test Condition  
I = 10 mA  
Min.  
Typ.  
Max.  
Unit  
V
1.0  
—
1.15  
—
1.3  
10  
—
V
F
F
Reverse current  
Capacitance  
I
V
= 5 V  
R
µA  
pF  
R
C
T
V = 0, f = 1 MHz  
—
30  
Collector-emitter  
V
V
I
I
= 0.5 mA  
= 0.1 mA  
80  
7
—
—
—
—
V
V
(BR) CEO  
(BR) ECO  
C
E
breakdown voltage  
Emitter-collector  
breakdown voltage  
V
= 48 V, ( Ambient light  
0.01  
(2)  
0.1  
CE  
—
µA  
below 1000 lx)  
(10)  
Collector dark current  
I
CEO  
V
= 48 V, Ta = 85°C, ( Ambient  
2
50  
CE  
—
—
µA  
pF  
light below 1000 lx)  
V = 0, f = 1 MHz  
(4)  
(50)  
Capacitance  
C
CE  
10  
—
(collector to emitter)  
Coupled Electrical Characteristics (Ta = 25°C)  
Characteristic  
Current transfer ratio  
Symbol  
/ I  
Test Condition  
MIn.  
Typ.  
Max.  
Unit  
%
50  
100  
—
—
—
60  
—
—
0.2  
—
1
600  
600  
—
I
= 5 mA, V = 5 V  
F
CE  
I
C
F
Rank GB  
IF = 1 mA, V = 0.4 V  
CE  
Saturated CTR  
I
/ I  
%
C
V
F (sat)  
Rank GB  
30  
—
—
I
I
= 2.4 mA, I = 8 mA  
0.4  
—
C
C
F
Collector-emitter  
V
—
CE (sat)  
= 0.2 mA, I = 1 mA  
F
saturation voltage  
Rank GB  
—
0.4  
10  
Off-state collector current  
I
V
= 0.7V, V = 48 V  
CE  
—
µA  
C (off)  
F
Isolation Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min.  
—
Typ.  
0.8  
Max.  
—
Unit  
Capacitance  
C
R
V
V
= 0V, f = 1 MHz  
pF  
S
S
S
(input to output)  
Isolation resistance  
= 500 V, R.H. ≤ 60%  
1×1012  
3750  
—
1014  
—
—
—
—
—
Ω
S
AC, 1 minute  
V
rms  
Isolation voltage  
BV  
S
AC, 1 second, in oil  
DC, 1 minute, in oil  
10000  
10000  
—
V
dc  
4
2002-09-25  
TLP181  
Swiching Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
µs  
Rise time  
t
—
—
—
—
—
—
—
2
3
—
—
—
—
—
—
—
r
Fall time  
t
f
V
= 10 V, I = 2 mA  
C
CC  
R = 100Ω  
L
Turn-on time  
Turn-off time  
Turn-on time  
Storage time  
Turn-off time  
t
t
3
on  
off  
3
t
2
ON  
R = 1.9 kΩ  
(Fig.1)  
L
CC  
µs  
t
25  
40  
s
V
= 5 V, I = 16 mA  
F
t
OFF  
Fig. 1 Switching time test circuit  
I
F
V
V
I
CC  
F
R
L
t
S
CE  
4.5V  
0.5V  
V
CE  
t
t
ON  
OFF  
5
2002-09-25  
TLP181  
I
– Ta  
P
– Ta  
C
F
100  
200  
80  
60  
40  
160  
120  
80  
20  
0
40  
0
-20  
0
20  
40  
60  
80  
100  
120  
-20  
0
20  
40  
60  
80  
100  
120  
Ambient temperature Ta (°C)  
Ambient temperature Ta (°C)  
I
– D  
I – V  
F F  
FP  
R
3000  
1000  
100  
Pulse width ≤ 100µs  
Ta = 25°C  
10  
1
500  
300  
100  
0.1  
0.01  
50  
30  
10  
3
10  
3
10  
3
10  
3
100  
3
2
1
-
-
-
25  
°C  
85°C  
0.4  
-25°C  
Duty cycle ratio  
D
R
0.001  
0
0.8  
1.2  
1.6  
2
Forward voltage  
V
(V)  
F
∆V / ∆Ta – I  
I
– V  
FP FP  
F
F
-3.2  
-2.8  
1000  
500  
300  
-2.4  
-2.0  
-1.6  
-1.2  
-0.8  
-0.4  
100  
50  
30  
10  
Pulse width ≤ 10µs  
Repetitive  
frequency = 100Hz  
Ta = 25°C  
5
3
1
0.1  
0.3 0.5  
1
3
5
10  
30 50  
0.6  
1.0  
1.4  
1.8  
2.2  
2.6  
3.0  
Forward current  
I
(mA)  
F
Pulse forward voltage  
V
(V)  
FP  
6
2002-09-25  
TLP181  
I
– V  
CE  
I
– V  
CE  
C
C
50  
40  
30  
20  
10  
Ta = 25°C  
Ta = 25°C  
50mA  
40mA  
30mA  
50mA  
30mA  
20mA  
15mA  
20mA  
30  
20  
10mA  
10mA  
5mA  
P
C
(MAX.)  
I
= 5mA  
F
10  
2mA  
0
0
0
0.2  
0.4  
0.6  
0.8  
CE  
0
2
4
6
8
10  
1.0  
Collector-emitter voltage  
V
(V)  
Collector-emitter voltage  
V
(V)  
CE  
I
– Ta  
I
– I  
F
CEO  
C
1
0
10  
Ta = 25°C  
100  
50  
30  
10  
10  
Sample A  
5
3
1
-
10  
V
CE  
= 48V  
Sample B  
1
24V  
10V  
5V  
0.5  
0.3  
V
= 10V  
= 5V  
= 0.4V  
CE  
2
-
10  
V
CE  
V
CE  
0.1  
0.1  
0.3 0.5  
1
3
5
10  
30 50  
Forward current  
I
F
(mA)  
3
4
-
10  
10  
-
0
20  
40  
60  
80  
100  
Ambient temperature Ta (°C)  
I
/ I – I  
F F  
C
1000  
Ta = 25°C  
Sample A  
500  
300  
100  
Sample B  
50  
30  
V
CE  
V
CE  
V
CE  
= 10V  
= 5V  
= 0.4V  
10  
0.1  
0.3 0.5  
1
3
5
10  
30 50  
Forward current  
I
F
(mA)  
7
2002-09-25  
TLP181  
V
– Ta  
I
– Ta  
CE(sat)  
C
0.24  
0.20  
100  
I
I
= 1mA  
= 0.2mA  
V
CE  
= 5V  
F
C
50  
30  
I
25mA  
10mA  
F =  
0.16  
0.12  
0.08  
5mA  
10  
5
3
0.04  
0
1mA  
1
-40  
-20  
0
20  
40  
60  
80  
100  
0.5  
0.3  
Ambient temperature Ta (°C)  
0.5mA  
0.1  
-20  
0
20  
40  
60  
80  
100  
Switching Time – R  
L
Ambient temperature Ta (°C)  
1000  
Ta = 25°C  
= 16mA  
I
F
V
CC  
= 5V  
500  
300  
Switching Time – Ta  
160  
t
OFF  
50  
30  
t
OFF  
100  
t
s
50  
30  
t
s
10  
5
3
t
ON  
10  
1
5
3
0.5  
0.3  
I
= 16mA  
= 5V  
F
t
ON  
V
CC  
RL = 1.9kΩ  
1
1
0.1  
-20  
0
20  
40  
60 80  
100  
3
5
10  
30  
50  
100  
Ambient temperature Ta (°C)  
Load resistance  
R
(kΩ)  
L
8
2002-09-25  
TLP181  
RESTRICTIONS ON PRODUCT USE  
000707EBC  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes  
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the  
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with  
domestic garbage.  
· The products described in this document are subject to the foreign exchange and foreign trade laws.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
9
2002-09-25  

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