TLP187(TPL,E [TOSHIBA]
Darlington Output Optocoupler, 1-Element, 3750V Isolation;
| 型号： | TLP187(TPL,E |
| 厂家： | 
TOSHIBA |
| 描述： | Darlington Output Optocoupler, 1-Element, 3750V Isolation 输出元件 光电 |
| 文件： | 总9页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP187
Photocouplers InGaAs Infrared LED & Photo Transistor
TLP187
1. Applications
•
•
•
Programmable Logic Controllers (PLCs)
I/O Interface Boards
Home Electric Appliances
2. General
TLP187 is a photocoupler that consist of a InGaAs infrared light-emitting diode optically coupled to a darlington
transistor. HousedinaSO6package, ithas ahighnoiseimmunityandahighinsulation. Withthehighbreakdown
voltage between the collector and emitter, TLP187 is suitable in applications such as 100 VDC output modules
of programmable controllers.
3. Features
(1) Collector-emitter voltage: 300 V (min)
(2) Current transfer ratio: 1000 % (min)
(3) Isolation voltage: 3750 Vrms (min)
(4) Operation temperature range:-55 to 110
(5) Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)
: EN62368-1 (Pending) (Note 1)
CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory
Note 1: When a VDE approved type is needed, please designate the Option (V4).
4. Packaging and Pin Configuration
1: Anode
3: Cathode
4: Emitter
6: Collector
11-4M1S
Start of commercial production
2012-10
©2015-2018
Toshiba Electronic Devices & Storage Corporation
2018-01-30
Rev.4.0
1
TLP187
5. Principle of Operation
5.1. Mechanical Parameters
Characteristics
Min
Unit
mm
Creepage distances
Clearance
5.0
5.0
0.4
Internal isolation thickness
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Input forward current
Symbol
Note
Rating
Unit
LED
IF
∆IF/∆Ta
IFP
50
-1.43
1
mA
mA/
A
Input forward current derating
Input forward current (pulsed)
Input reverse voltage
(Ta ≥ 90 )
(Ta ≥ 90 )
(Note 1)
VR
5
V
Input power dissipation
PD
100
-2.86
mW
mW/
Input power dissipation
derating
∆PD/∆Ta
Junction temperature
Tj
VCEO
VECO
IC
125
300
0.3
Detector Collector-emitter voltage
Emitter-collector voltage
Collector current
V
150
150
-1.5
mA
mW
Collector power dissipation
PC
Collector power dissipation
derating
(Ta ≥ 25 )
∆PC/∆Ta
mW/
Junction temperature
Common Operating temperature
Storage temperature
Tj
125
-55 to 110
-55 to 125
260
Topr
Tstg
Tsol
PT
Lead soldering temperature
Total power dissipation
Isolation voltage
(10 s)
200
mW
AC, 60 s, R.H. ≤ 60 %
BVS
(Note 2)
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 100 µs, f = 1000 Hz
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
©2015-2018
Toshiba Electronic Devices & Storage Corporation
2018-01-30
Rev.4.0
2
TLP187
7. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Input forward voltage
Symbol
Note
Test Condition
IF = 10 mA
Min
Typ.
Max
Unit
LED
VF
IR
1.1
1.25
1.4
10
V
µA
pF
V
Input reverse current
Input capacitance
VR = 5 V
Ct
V = 0 V, f = 1 MHz
IC = 0.1 mA
30
Detector Collector-emitter breakdown
voltage
V(BR)CEO
300
Emitter-collector breakdown
voltage
V(BR)ECO
IDARK
IE = 0.1 mA
0.3
Dark Current
VCE = 200 V
0.01
0.2
20
µA
VCE = 200 V, Ta = 85
V = 0 V, f = 1 MHz
Collector-emitter capacitance
CCE
12
pF
8. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Test Condition
IF = 1 mA, VCE = 1 V
Min
Typ.
Max
Unit
%
Current transfer ratio
IC/IF
1000
500
4000
Saturated current transfer ratio
IC/IF(sat)
VCE(sat)
IF = 10 mA, VCE = 1 V
IC = 10 mA, IF = 1 mA
Collector-emitter saturation
voltage
1.0
V
IC = 100 mA, IF = 10 mA
VF = 0.7 V, VCE = 200 V
0.3
1.2
20
OFF-state collector current
IC(off)
µA
9. Isolation Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
CS
Note
Test Conditions
Min
Typ.
0.8
Max
Unit
pF
Total capacitance (input to
output)
(Note 1) VS = 0 V, f = 1 MHz
Isolation resistance
Isolation voltage
RS
(Note 1) VS = 500 V, R.H. ≤ 60 %
(Note 1) AC, 60 s
AC, 1s in oil
1 × 1012
3750
1014
Ω
BVS
Vrms
10000
10000
DC, 60 s in oil
Vdc
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
10. Switching Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Test Condition
Min
Typ.
Max
Unit
Rise time
Fall time
tr
VCC = 10 V, IC = 10 mA,
RL = 100 Ω
40
15
50
15
5
µs
tf
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
ton
toff
ton
ts
See Figure 10.1
RL = 180 Ω, VCC = 10 V,
IF = 16 mA
40
80
toff
Fig. 10.1 Switching Time Test Circuit and Waveform
©2015-2018
Toshiba Electronic Devices & Storage Corporation
2018-01-30
Rev.4.0
3
TLP187
11. Characteristics Curves (Note)
Fig. 11.1 IF - Ta
Fig. 11.2 PC - Ta
Fig. 11.3 IFP - DR
Fig. 11.4 IF - VF
Fig. 11.5 ∆VF/∆Ta - IF
Fig. 11.6 IFP - VFP
©2015-2018
2018-01-30
Rev.4.0
4
Toshiba Electronic Devices & Storage Corporation
TLP187
Fig. 11.7 IC - VCEO
Fig. 11.8 IC - IF
Fig. 11.9 IDARK - Ta
Fig. 11.10 IC/IF - IF
Fig. 11.11 VCE(sat) - Ta
Fig. 11.12 IC - Ta
©2015-2018
Toshiba Electronic Devices & Storage Corporation
2018-01-30
Rev.4.0
5
TLP187
Fig. 11.13 Switching Time - RL
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2015-2018
Toshiba Electronic Devices & Storage Corporation
2018-01-30
Rev.4.0
6
TLP187
12. Soldering and Storage
12.1. Precautions for Soldering
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective
of whether a soldering iron or a reflow soldering method is used.
•
When using soldering reflow.
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below, which is based on the package surface temperature.)
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
Fig. 12.1.1 An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used
•
•
When using soldering flow
Preheat the device at a temperature of 150 (package surface temperature) for 60 to 120 seconds.
Mounting condition of 260 within 10 seconds is recommended.
Flow soldering must be performed once.
When using soldering Iron
Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not
exceeding 350
Heating by soldering iron must be done only once per lead.
12.2. Precautions for General Storage
•
•
•
Avoid storage locations where devices may be exposed to moisture or direct sunlight.
Follow the precautions printed on the packing label of the device for transportation and storage.
Keep the storage location temperature and humidity within a range of 5 to 35 and 45 % to 75 %,
respectively.
•
•
Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
•
•
•
When restoring devices after removal from their packing, use anti-static containers.
Do not allow loads to be applied directly to devices while they are in storage.
If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
©2015-2018
2018-01-30
Rev.4.0
7
Toshiba Electronic Devices & Storage Corporation
TLP187
Package Dimensions
Unit: mm
Weight: 0.08 g (typ.)
Package Name(s)
TOSHIBA: 11-4M1S
©2015-2018
Toshiba Electronic Devices & Storage Corporation
2018-01-30
Rev.4.0
8
TLP187
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA".
Hardware, software and systems described in this document are collectively referred to as "Product".
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TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's
written permission, reproduction is permissible only if reproduction is without alteration/omission.
•
ThoughTOSHIBAworkscontinuallytoimproveProduct'squalityandreliability,Productcanmalfunctionorfail.Customersareresponsible
for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
•
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDEDUSE").Exceptforspecificapplicationsasexpresslystatedinthisdocument, UnintendedUseincludes, withoutlimitation,
equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles,
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UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales
representative.
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Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
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The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
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intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
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FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER,
INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING
WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND
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OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
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GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor.
Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,
for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products
(mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and
regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration
Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all
applicable export laws and regulations.
•
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
©2015-2018
2018-01-30
Rev.4.0
9
Toshiba Electronic Devices & Storage Corporation
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