TLP2160(V4,F) [TOSHIBA]

IC Output Optocoupler;
TLP2160(V4,F)
型号: TLP2160(V4,F)
厂家: TOSHIBA    TOSHIBA
描述:

IC Output Optocoupler

文件: 总18页 (文件大小:473K)
中文:  中文翻译
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TLP2160  
Photocouplers Infrared LED & Photo IC  
TLP2160  
1. Applications  
Factory Networking  
High-Speed Digital Interfacing for Instrumentation and Control Devices  
Plasma Display Panels (PDPs)  
2. General  
The Toshiba TLP2160 consists of a high-output infrared LED coupled with a high-speed photo IC chip. TLP2160  
guarantees operation at up to 125and on supplies from 2.7 V to 5.5 V. It is offered in the SO8 package. It has  
a totem-pole output that can both sink and source current. With two LED-photoreceptor pairs, the TLP2160 helps  
save board space. An internal noise shield provides a guaranteed common-mode transient immunity of 20 kV/µs.  
3. Features  
(1) Inverter logic type (totem pole output)  
(2) Package: SO8  
(3) Operating temperature range: -40 to 125   
(4) Supply voltage: 2.7 to 5.5 V  
(5) Data transfer rate: 20 MBd (typ.) (NRZ)  
(6) Threshold input current: 3.5 mA (max)  
(7) Supply current: 5 mA (max)  
(8) Common-mode transient immunity: ±20 kV/µs (min)  
(9) Isolation voltage: 2500 Vrms (min)  
(10) Safety standards  
UL-recognized: UL 1577, File No.E67349  
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349  
VDE-approved: EN 60747-5-5 (Note 1)  
Note 1: When a VDE approved type is needed, please designate the Option (V4).  
4. Packaging and Pin Assignment  
1: Anode1  
2: Cathode1  
3: Cathode2  
4: Anode2  
5: GND  
6: VO2 (Output2)  
7: VO1 (Output1)  
8: VCC  
11-5K1S  
Start of commercial production  
2011-03  
©2016-2019  
2019-11-21  
Rev.4.0  
1
Toshiba Electronic Devices & Storage Corporation  
TLP2160  
5. Internal Circuit (Note)  
Note: A 0.1-µF bypass capacitor must be connected between pin 8 and pin 5.  
6. Principle of Operation  
6.1. Truth Table  
Input  
LED1(2)  
M1(3)  
M2(4)  
Output1(2)  
H
L
ON  
OFF  
ON  
ON  
L
OFF  
OFF  
H
6.2. Mechanical Parameters  
Characteristics  
Min  
Unit  
mm  
Creepage distances  
4.2  
4.2  
Clearance distances  
Internal isolation thickness  
©2016-2019  
2019-11-21  
Rev.4.0  
2
Toshiba Electronic Devices & Storage Corporation  
TLP2160  
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )  
Characteristics  
Input forward current  
Symbol  
Note  
Rating  
Unit  
LED  
IF  
IF/Ta  
IFP  
(Note 1)  
(Note 1)  
25  
-0.67  
40  
mA  
mA/  
mA  
Input forward current derating  
Input forward current (pulsed)  
(Ta 110 )  
(Ta 110 )  
(Ta 110 )  
(Note 1),  
(Note 2)  
Input forward current derating  
(pulsed)  
IFP/Ta  
(Note 1)  
-1.0  
mA/  
Input power dissipation  
PD  
(Note 1)  
(Note 1)  
40  
mW  
Input power dissipation  
derating  
PD/Ta  
-1.0  
mW/  
Input reverse voltage  
VR  
IO  
(Note 1)  
(Note 1)  
(Note 1)  
5
10  
6
V
mA  
V
Detector Output current  
Output voltage  
VO  
Supply voltage  
VCC  
PO  
6
Output power dissipation  
(Note 1)  
(Note 1)  
60  
-1.5  
mW  
Output power dissipation  
derating  
(Ta 110 )  
PO/Ta  
mW/  
Common Operating temperature  
Storage temperature  
Topr  
Tstg  
Tsol  
BVS  
-40 to 125  
-55 to 150  
260  
Lead soldering temperature  
Isolation voltage  
(10 s)  
(AC, 60 s, R.H. 60 %)  
(Note 3)  
2500  
Vrms  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Each channel  
Note 2: Pulse width (PW) 1 ms, duty = 50 %  
Note 3: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7  
and 8 are shorted together.  
8. Recommended Operating Conditions (Note)  
Characteristics  
Symbol  
Note  
Min  
4.5  
Typ.  
Max  
15  
Unit  
mA  
Input on-state current  
IF(ON)  
(Note 1),  
(Note 2)  
Input off-state voltage  
Supply voltage  
VF(OFF)  
VCC  
(Note 1)  
(Note 3)  
(Note 3)  
0
3.3 / 5  
0.8  
5.5  
125  
V
2.7  
-40  
Operating temperature  
Topr  
Note: The recommended operating conditions are given as a design guide necessary to obtain the intended  
performance of the device. Each parameter is an independent value. When creating a system design using  
this device, the electrical characteristics specified in this data sheet should also be considered.  
Note: A ceramic capacitor (0.1 µF) should be connected between pin 8 and pin 5 to stabilize the operation of a high-  
gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be  
placed within 1 cm of each pin.  
Note 1: Each channel  
Note 2: The rise and fall times of the input on-current should be less than 0.5 µs.  
Note 3: Denotes the operating range, not the recommended operating condition.  
©2016-2019  
Toshiba Electronic Devices & Storage Corporation  
2019-11-21  
Rev.4.0  
3
TLP2160  
9. Electrical Characteristics (Note)  
(Unless otherwise specified, Ta = -40 to 125 , VCC = 2.7 to 5.5 V)  
Test  
Circuit  
Characteristics  
Symbol  
Note  
Test Condition  
Min  
Typ.  
Max  
Unit  
Input forward voltage  
VF  
(Note 1)  
(Note 1)  
IF = 10 mA, Ta = 25   
1.45  
1.55  
-2.0  
1.7  
V
Input forward voltage  
temperature coefficient  
VF/Ta  
IF = 10 mA  
mV/  
Input reverse current  
Input capacitance  
IR  
Ct  
(Note 1)  
(Note 1)  
(Note 1)  
VR = 5 V, Ta = 25   
60  
10  
µA  
pF  
V
V = 0 V, f = 1 MHz , Ta = 25   
Low-level output voltage  
VOL  
Fig. IF = 14 mA, IO = 4 mA  
12.1.1  
0.4  
High-level output voltage  
VOH  
(Note 1)  
Fig. VF = 1.05 V, IO = -4 mA,  
12.1.2 VCC = 3.3 V  
2.3  
4
5
VF = 1.05 V, IO = -4 mA,  
VCC = 5 V  
Low-level supply current  
High-level supply current  
Threshold input current (H/L)  
ICCL  
ICCH  
IFHL  
Fig. IF1 = IF2 = 14 mA  
12.1.3  
mA  
Fig.  
IF1 = IF2 = 0 mA  
5
12.1.4  
(Note 1)  
IO = 1.6 mA, VO < 0.4 V  
3.5  
Note: All typical values are at VCC = 5.0 V, Ta = 25 .  
Note 1: Each channel  
10. Isolation Characteristics (Unless otherwise specified, Ta = 25 )  
Characteristics  
Symbol  
Note  
Test Condition  
Min  
Typ.  
Max  
Unit  
Total capacitance (input to output)  
Isolation resistance  
CS  
RS  
(Note 1) V = 0 V, f = 1 MHz  
(Note 1) V = 500 V, R.H. 60 %  
(Note 1) AC, 60 s  
0.8  
1014  
pF  
1012  
2500  
Isolation voltage  
BVS  
Vrms  
Note 1: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7  
and 8 are shorted together.  
©2016-2019  
Toshiba Electronic Devices & Storage Corporation  
2019-11-21  
Rev.4.0  
4
TLP2160  
11. Switching Characteristics (Note)  
11.1. Switching Characteristics (1)  
(Unless otherwise specified, Ta = -40 to 125 , VCC = 2.7 to 3.6 V)  
Test  
Circuit  
Characteristics  
Symbol  
Note  
Test Condition  
Min  
Typ.  
30  
Max  
40  
Unit  
ns  
Propagation delay time (H/L)  
tpHL  
(Note 1)  
Fig.  
IF = 0 14 mA, RIN = 100 ,  
12.1.5 CL = 15 pF  
Propagation delay time (L/H)  
Pulse width distortion  
tpLH  
(Note 1)  
IF = 14 0 mA, RIN = 100 , CL  
= 15 pF  
25  
5
40  
25  
30  
55  
55  
30  
30  
|tpHL- (Note 1)  
tpLH|  
IF = 14 mA, RL = 100 ,  
CL = 15 pF  
ns  
ns  
Propagation delay skew  
(device to device)  
tpsk  
tpHL  
tpLH  
(Note 1),  
(Note 2)  
IF = 14 mA, RIN = 100 ,  
CL = 15 pF  
-30  
Propagation delay time (H/L)  
Propagation delay time (L/H)  
Pulse width distortion  
(Note 1)  
Fig.  
IF = 0 6 mA RIN = 100 ,  
12.1.5 CL = 15 pF  
36  
26  
10  
(Note 1)  
IF = 6 0 mA, RIN = 100,  
CL = 15 pF  
ns  
ns  
|tpHL- (Note 1)  
tpLH|  
IF = 6 mA, RIN = 100 ,  
CL = 15 pF  
Propagation delay skew  
(device to device)  
tpsk  
(Note 1),  
(Note 2)  
IF = 6 mA, RIN = 100 ,  
CL = 15 pF  
-30  
ns  
Fall time  
tf  
(Note 1)  
Fig.  
IF = 0 14 mA, RIN = 100 ,  
12.1.5 CL = 15 pF  
15  
15  
±25  
ns  
Rise time  
tr  
(Note 1)  
IF = 14 0 mA, RIN = 100 ,  
CL = 15 pF  
ns  
High-level common-mode  
transient immunity  
CMH  
Fig.  
VCM = 1000 Vp-p, IF = 0 mA,  
12.1.6 VO(min) = 2 V, VCC = 3.3 V,  
±20  
kV/µs  
Ta = 25   
Low-level common-mode  
transient immunity  
CML  
VCM = 1000 Vp-p, IF = 14 mA,  
VO(max) = 0.4 V,VCC = 3.3 V,  
Ta = 25   
±20  
±25  
kV/µs  
Note: All typical values are at VCC = 3.3 V, Ta = 25 .  
Note: Each channel  
Note 1: f = 5 MHz, duty = 50 %, input current tr = tf = less than 5 ns, CL is less than 15 pF which includes probe and  
stray wiring capacitance.  
Note 2: The propagation delay skew, tpsk, is equal to the magnitude of the worst-case difference in tpHL and/or tpLH  
that will be seen between units at the same given conditions (supply voltage, input current, temperature, etc.).  
©2016-2019  
Toshiba Electronic Devices & Storage Corporation  
2019-11-21  
Rev.4.0  
5
TLP2160  
11.2. Switching Characteristics (2)  
(Unless otherwise specified,Ta = -40 to 125 , VCC = 4.5 to 5.5 V)  
Test  
Circuit  
Characteristics  
Symbol  
Note  
Test Condition  
Min  
Typ.  
33  
Max  
45  
Unit  
ns  
Propagation delay time (H/L) tpHL  
Propagation delay time (L/H) tpLH  
(Note 1)  
Fig. IF = 0 14 mA, RIN = 100 ,  
12.1.5 CL = 15 pF  
(Note 1)  
(Note 1)  
IF = 14 0 mA, RIN = 100 ,  
CL = 15 pF  
25  
8
45  
25  
30  
55  
55  
30  
30  
ns  
ns  
Pulse width distortion  
|tpHL-  
tpLH|  
IF = 14 mA, RIN = 100 ,  
CL = 15 pF  
Propagation delay skew  
(device to device)  
tpsk  
(Note 1), (Note 2)  
(Note 1)  
IF = 14 mA, RIN = 100 ,  
CL = 15 pF  
-30  
ns  
Propagation delay time (H/L) tpHL  
Fig.  
IF = 0 6 mA, RIN = 100 ,  
40  
28  
12  
ns  
12.1.5 CL = 15 pF  
Propagation delay time (L/H) tpLH  
(Note 1)  
IF = 6 0 mA, RIN = 100 ,  
CL = 15 pF  
ns  
Pulse width distortion  
|tpHL-  
tpLH|  
(Note 1)  
IF = 6 mA, RIN = 100 ,  
CL = 15 pF  
ns  
Propagation delay skew  
(device to device)  
tpsk  
(Note 1), (Note 2)  
(Note 1)  
IF = 6 mA, RIN = 100 ,  
CL = 15 pF  
-30  
ns  
Fall time  
tf  
Fig.  
IF = 0 14 mA, RIN = 100 ,  
15  
15  
±25  
ns  
12.1.5 CL = 15 pF  
Rise time  
tr  
(Note 1)  
IF = 14 0 mA, RIN = 100 ,  
CL = 15 pF  
ns  
High-level common-mode  
transient immunity  
CMH  
Fig. VCM = 1000 Vp-p, IF = 0 mA,  
12.1.6 VO(min) = 4 V, VCC = 5 V,  
Ta = 25   
±20  
kV/µs  
Low-level common-mode  
transient immunity  
CML  
VCM = 1000 Vp-p, IF = 14 mA,  
VO(max) = 0.4 V, VCC = 5 V,  
Ta = 25   
±20  
±25  
kV/µs  
Note: All typical values are at VCC = 5 V, Ta = 25 .  
Note: Each channel  
Note 1: f = 5 MHz, duty = 50 %, input current tr = tf = less than 5 ns, CL is less than 15 pF which includes probe and  
stray wiring capacitance.  
Note 2: The propagation delay skew, tpsk, is equal to the magnitude of the worst-case difference in tpHL and/or tpLH  
that will be seen between units at the same given conditions (supply voltage, input current, temperature, etc.).  
©2016-2019  
Toshiba Electronic Devices & Storage Corporation  
2019-11-21  
Rev.4.0  
6
TLP2160  
12. Test Circuits and Characteristics Curves  
12.1. Test Circuits  
Fig. 12.1.1 VOL Test Circuit  
Fig. 12.1.2 VOH Test Circuit  
Fig. 12.1.3 ICCL Test Circuit  
Fig. 12.1.4 ICCH Test Circuit  
Fig. 12.1.5 Switching Time Test Circuit and Waveform  
Fig. 12.1.6 Common-Mode Transient Immunity Test Circuit and Waveform  
©2016-2019  
Toshiba Electronic Devices & Storage Corporation  
2019-11-21  
Rev.4.0  
7
TLP2160  
12.2. Characteristics Curves (Note)  
Fig. 12.2.1 IF - VF  
Fig. 12.2.3 VOL - Ta  
Fig. 12.2.5 ICCL - Ta  
Fig. 12.2.2 IF - Ta  
Fig. 12.2.4 VOH - Ta  
Fig. 12.2.6 ICCH - Ta  
©2016-2019  
2019-11-21  
Rev.4.0  
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Toshiba Electronic Devices & Storage Corporation  
TLP2160  
Fig. 12.2.7 IFHL - Ta  
Fig. 12.2.8 IFHL - Ta  
Fig. 12.2.9 tpLH, tpHL - Ta  
Fig. 12.2.10 |tpHL - tpLH| - Ta  
Fig. 12.2.11 tpLH, tpHL -Ta  
Fig. 12.2.12 |tpHL - tpLH| - Ta  
©2016-2019  
Toshiba Electronic Devices & Storage Corporation  
2019-11-21  
Rev.4.0  
9
TLP2160  
Fig. 12.2.13 tpLH, tpHL - IF  
Fig. 12.2.14 |tpHL - tpLH| - IF  
Fig. 12.2.15 tpLH, tpHL, - IF  
Fig. 12.2.16 |tpHL - tpLH| - IF  
Fig. 12.2.17 tpLH, tpHL - VCC  
Fig. 12.2.18 |tpHL - tpLH| - VCC  
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,  
unless otherwise noted.  
©2016-2019  
Toshiba Electronic Devices & Storage Corporation  
2019-11-21  
Rev.4.0  
10  
TLP2160  
13. Soldering and Storage  
13.1. Precautions for Soldering  
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective  
of whether a soldering iron or a reflow soldering method is used.  
When using soldering reflow.  
The soldering temperature profile is based on the package surface temperature.  
(See the figure shown below, which is based on the package surface temperature.)  
Reflow soldering must be performed once or twice.  
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.  
Fig. 13.1.1 An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used  
When using soldering flow  
Preheat the device at a temperature of 150 (package surface temperature) for 60 to 120 seconds.  
Mounting condition of 260 within 10 seconds is recommended.  
Flow soldering must be performed once.  
When using soldering Iron (Applicable to both eutectic solder and Lead(Pb)-Free solder)  
Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not  
exceeding 350   
Heating by soldering iron must be done only once per lead.  
13.2. Precautions for General Storage  
Avoid storage locations where devices may be exposed to moisture or direct sunlight  
Follow the precautions printed on the packing label of the device for transportation and storage.  
Keep the storage location temperature and humidity within a range of 5 to 35 and 45 % to 75 %,  
respectively.  
Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty  
conditions.  
Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during  
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the  
solderability of the leads.  
When restoring devices after removal from their packing, use anti-static containers.  
Do not allow loads to be applied directly to devices while they are in storage.  
If devices have been stored for more than two years under normal storage conditions, it is recommended  
that you check the leads for ease of soldering prior to use.  
©2016-2019  
2019-11-21  
Rev.4.0  
11  
Toshiba Electronic Devices & Storage Corporation  
TLP2160  
14. Land Pattern Dimensions (for reference only)  
Unit: mm  
15. Marking  
©2016-2019  
2019-11-21  
Rev.4.0  
12  
Toshiba Electronic Devices & Storage Corporation  
TLP2160  
16. EN 60747-5-5 Option (V4) Specification  
Part number: TLP2160 (Note 1)  
The following part naming conventions are used for the devices that have been qualified according to  
option (V4) of EN 60747.  
Example: TLP2160(V4-TP,F)  
V4: EN 60747 option  
TP: Tape type  
F: [[G]]/RoHS COMPATIBLE (Note 2)  
Note 1: Use TOSHIBA standard type number for safety standard application.  
e.g., TLP2160(V4-TP,F) TLP2160  
Note 2: Please contact your Toshiba sales representative for details on environmental information such as the product's  
RoHS compatibility.  
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the  
restriction of the use of certain hazardous substances in electrical and electronic equipment.  
Fig. 16.1 EN 60747 Isolation Characteristics  
©2016-2019  
Toshiba Electronic Devices & Storage Corporation  
2019-11-21  
Rev.4.0  
13  
TLP2160  
Fig. 16.2 Insulation Related Specifications (Note)  
Note: This photocoupler is suitable for safe electrical isolation only within the safety limit data.  
Maintenance of the safety data shall be ensured by means of protective circuits.  
Fig. 16.3 Marking on Packing  
Fig. 16.4 Marking Example (Note)  
Note: Theabovemarkingisappliedtothephotocouplersthathavebeenqualifiedaccordingtooption(V4)ofEN60747.  
©2016-2019  
Toshiba Electronic Devices & Storage Corporation  
2019-11-21  
Rev.4.0  
14  
TLP2160  
Fig. 16.5 Measurement Procedure  
©2016-2019  
Toshiba Electronic Devices & Storage Corporation  
2019-11-21  
Rev.4.0  
15  
TLP2160  
17. Ordering Information  
When placing an order, please specify the part number, tape type and quantity as shown in the following example.  
Example) TLP2160 (TP,F) 2500 pcs  
Part number: TLP2160  
Tape type: TP  
[[G]]/RoHS COMPATIBLE: F (Note)  
Quantity (must be a multiple of 2500)  
Note : Please contact your Toshiba sales representative for details on environmental information such as the product's  
RoHS compatibility.  
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the  
restriction of the use of certain hazardous substances in electrical and electronic equipment.  
©2016-2019  
Toshiba Electronic Devices & Storage Corporation  
2019-11-21  
Rev.4.0  
16  
TLP2160  
Package Dimensions  
Unit: mm  
Weight: 0.11 g (typ.)  
Package Name(s)  
TOSHIBA: 11-5K1S  
©2016-2019  
Toshiba Electronic Devices & Storage Corporation  
2019-11-21  
Rev.4.0  
17  
TLP2160  
RESTRICTIONS ON PRODUCT USE  
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Hardware, software and systems described in this document are collectively referred to as "Product".  
TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.  
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written permission, reproduction is permissible only if reproduction is without alteration/omission.  
ThoughTOSHIBAworkscontinuallytoimproveProduct'squalityandreliability,Productcanmalfunctionorfail.Customersareresponsible  
for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which  
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage  
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate  
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA  
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the  
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application  
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,  
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating  
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample  
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.  
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PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE  
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY  
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT  
("UNINTENDED USE").  
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For details, please contact your TOSHIBA sales representative or contact us via our website.  
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ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER,  
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OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR  
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GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor.  
Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,  
for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products  
(mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and  
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Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING  
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.  
https://toshiba.semicon-storage.com/  
©2016-2019  
2019-11-21  
Rev.4.0  
18  
Toshiba Electronic Devices & Storage Corporation  

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