TLP281-4 [TOSHIBA]

TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR; 东芝光耦合器砷化镓红外发光二极管和光电晶体管
TLP281-4
型号: TLP281-4
厂家: TOSHIBA    TOSHIBA
描述:

TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
东芝光耦合器砷化镓红外发光二极管和光电晶体管

晶体 光电 二极管 晶体管 光电晶体管 输出元件
文件: 总7页 (文件大小:201K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TLP281,TLP281-4  
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR  
TLP281,TLP281-4  
PROGRAMMABLE CONTROLLERS  
Unit in mm  
AC/DC-INPUT MODULE  
PC CARD MODEM(PCMCIA)  
TLP281 and TLP281-4 is a very small and thin coupler,suitable  
for surface mount assembly in applications such as PCMCIA Fax  
modem,programmable controllers.  
TLP281 and TLP281-4 consist of photo transistor,optically coupled  
to a gallium arsenide infrared emitting diode.  
l Collector-Emitter Voltage : 80 V (MIN)  
l Current Transfer Ratio  
: 50% (MIN)  
: 100% (MIN)  
Rank GB  
l Isolation Voltage  
l UL Recognized  
l BSI Approved  
: 2500 Vrms (MIN)  
: UL1577 , File No. E67349  
: BS EN 60065: 1994,  
: BS EN 41003: 1997  
Certificate No. 8143, 8144  
TOSHIBA  
Weight: 0.05 g  
Unit in mm  
PIN CONFIGURATION(Top view)  
TLP281  
TLP281-4  
1
2
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
4
3
1:ANODE  
2:CATHODE  
3:EMITTER  
4:COLLECTOR  
TOSHIBA  
10  
9
Weight: 0.19 g  
1,3,5,7  
2,4,6,8  
:ANODE  
:CATHODE  
9,11,13,15 :EMITTER  
10,12,14,16 :COLLECTOR  
1
2002-06-27  
TLP281,TLP281-4  
MAXIMUM RATINGS (Ta = 25)  
RATING  
50  
CHARACTERISTIC  
Forward Current  
SYMBOL  
UNIT  
TLP281  
TLP2814  
I
mA  
F
Forward Current Derating  
Pulse Forward Current  
Reverse Voltage  
I /°C  
0.7 (Ta53°C)  
0.5 (Ta25°C)  
mA /°C  
F
I
1
5
A
V
FP  
V
R
Junction Temperature  
Collector-Emitter Voltage  
Emitter-Collector Voltage  
T
125  
80  
7
°C  
V
j
V
CEO  
ECO  
V
V
Collector Current  
I
50  
mA  
C
Collector Power Dissipation  
(1 Circuit)  
P
150  
100  
mW  
C
Collector Power Dissipation  
Derating(Ta25°C) (1 Circuit)  
P /°C  
1.5  
1.0  
mW /°C  
C
Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Lead Soldering Temperature  
T
125  
°C  
°C  
°C  
°C  
j
T
55~100  
55~125  
260 (10s)  
opr  
T
stg  
sol  
T
Total Package Power Dissipation  
P
200  
170  
mW  
T
(1 Circuit)  
Total Package Power Dissipation  
Derating (Ta25°C) (1 Circuit)  
P /°C  
2.0  
1.7  
mW /°C  
Vrms  
T
Isolation Voltage  
(Note1)  
BV  
2500(AC,1min,R.H.60%)  
S
(Note1)Device considered a two terminal device : LED side pins shorted together and  
DETECTOR side pins shorted together.  
INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25)  
CHARACTERISTIC  
Forward Voltage  
SYMBOL  
TEST CONDITION  
= 10 mA  
F
MIN.  
TYP.  
MAX. UNIT  
V
I
I
1.0  
1.15  
1.3  
10  
V
F
Reverse Current  
Capacitance  
V
= 5 V  
R
µA  
pF  
R
C
T
V = 0, f = 1 MHz  
30  
Collector-Emitter  
Breakdown Voltage  
Emitter-Collector  
Breakdown Voltage  
V
V
I
I
= 0.5 mA  
= 0.1 mA  
80  
7
V
(BR) CEO  
(BR) ECO  
C
E
V
V
= 48 V,  
CE  
0.01  
(2)  
0.1  
Ambient Light Below  
µA  
(10)  
Collector Dark Current  
(100 x)  
I
CEO  
(Note2)  
V
= 48 V, Ta = 85°C  
CE  
2
50  
Ambient Light Below  
µA  
pF  
(4)  
(50)  
(100 x)  
Capacitance  
C
CE  
V = 0, f = 1 MHz  
10  
(Collector to Emitter)  
(Note 2) Because of the construction,leak current might be increased by ambient light.  
Please use photocoupler with less ambient light.  
2
2002-06-27  
TLP281,TLP281-4  
COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25)  
CHARACTERISTIC  
Current Transfer Ratio  
SYMBOL  
/ I  
TEST CONDITION  
= 5 mA, V = 5 V  
MIN.  
TYP.  
MAX. UNIT  
I
50  
100  
600  
%
60  
F
CE  
I
C
F
Rank GB  
600  
IF = 1 mA, VCE = 0.4 V  
%
Saturated CTR  
I
/ I  
C
V
F (sat)  
Rank GB  
30  
I
I
= 2.4 mA, I = 8 mA  
F
0.4  
C
C
Collector-Emitter  
V
= 0.2 mA, I = 1 mA  
F
0.2  
0.4  
10  
CE (sat)  
Saturation Voltage  
Rank GB  
Off-State Collector Current  
I
V
= 0.7 V, V = 48 V  
F CE  
µA  
C (off)  
ISOLATION CHARACTERISTICS (Ta = 25)  
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
= 0 V, f = 1 MHz  
MIN.  
TYP.  
0.8  
MAX. UNIT  
Capacitance  
C
S
V
V
pF  
S
S
(Input to Output)  
10  
14  
Isolation Resistance  
R
S
= 500 V, R.H.60%  
5×10  
2500  
10  
AC , 1 minute  
Vrms  
Vdc  
Isolation Voltage  
BV  
S
AC , 1 second,in OIL  
DC , 1 minute, in OIL  
5000  
5000  
SWITCHING CHARACTERISTICS (Ta = 25)  
CHARACTERISTIC  
Rise Time  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
µs  
t
r
2
3
Fall Time  
t
f
V
= 10 V, I = 2 mA  
C
CC  
R = 100Ω  
L
Turn-On Time  
Turn-Off Time  
Turn-On Time  
Storage Time  
Turn-Off Time  
t
3
on  
t
3
off  
t
2
ON  
R = 1.9 k(Fig.1)  
L
CC  
µs  
t
25  
40  
s
V
= 5 V, I = 16 mA  
F
t
OFF  
(Fig.1)SWITCHING TIME TEST CIRCUIT  
3
2002-06-27  
TLP281,TLP281-4  
TLP281  
TLP281-4  
TLP281  
TLP281-4  
4
2002-06-27  
TLP281,TLP281-4  
5
2002-06-27  
TLP281,TLP281-4  
6
2002-06-27  
TLP281,TLP281-4  
RESTRICTIONS ON PRODUCT USE  
000707EBC  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes  
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the  
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with  
domestic garbage.  
· The products described in this document are subject to the foreign exchange and foreign trade laws.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
7
2002-06-27  

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