TLP281-4 [TOSHIBA]
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR; 东芝光耦合器砷化镓红外发光二极管和光电晶体管型号: | TLP281-4 |
厂家: | TOSHIBA |
描述: | TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR |
文件: | 总7页 (文件大小:201K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLP281,TLP281-4
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
TLP281,TLP281-4
PROGRAMMABLE CONTROLLERS
Unit in mm
AC/DC-INPUT MODULE
PC CARD MODEM(PCMCIA)
TLP281 and TLP281-4 is a very small and thin coupler,suitable
for surface mount assembly in applications such as PCMCIA Fax
modem,programmable controllers.
TLP281 and TLP281-4 consist of photo transistor,optically coupled
to a gallium arsenide infrared emitting diode.
l Collector-Emitter Voltage : 80 V (MIN)
l Current Transfer Ratio
: 50% (MIN)
: 100% (MIN)
Rank GB
l Isolation Voltage
l UL Recognized
l BSI Approved
: 2500 Vrms (MIN)
: UL1577 , File No. E67349
: BS EN 60065: 1994,
: BS EN 41003: 1997
Certificate No. 8143, 8144
TOSHIBA
Weight: 0.05 g
―
Unit in mm
PIN CONFIGURATION(Top view)
TLP281
TLP281-4
1
2
1
2
3
4
5
6
7
8
16
15
14
13
12
11
4
3
1:ANODE
2:CATHODE
3:EMITTER
4:COLLECTOR
TOSHIBA
―
10
9
Weight: 0.19 g
1,3,5,7
2,4,6,8
:ANODE
:CATHODE
9,11,13,15 :EMITTER
10,12,14,16 :COLLECTOR
1
2002-06-27
TLP281,TLP281-4
MAXIMUM RATINGS (Ta = 25℃)
RATING
50
CHARACTERISTIC
Forward Current
SYMBOL
UNIT
TLP281
TLP281−4
I
mA
F
Forward Current Derating
Pulse Forward Current
Reverse Voltage
∆I /°C
−0.7 (Ta≥53°C)
−0.5 (Ta≥25°C)
mA /°C
F
I
1
5
A
V
FP
V
R
Junction Temperature
Collector-Emitter Voltage
Emitter-Collector Voltage
T
125
80
7
°C
V
j
V
CEO
ECO
V
V
Collector Current
I
50
mA
C
Collector Power Dissipation
(1 Circuit)
P
150
100
mW
C
Collector Power Dissipation
Derating(Ta≥25°C) (1 Circuit)
∆P /°C
−1.5
−1.0
mW /°C
C
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
T
125
°C
°C
°C
°C
j
T
−55~100
−55~125
260 (10s)
opr
T
stg
sol
T
Total Package Power Dissipation
P
200
170
mW
T
(1 Circuit)
Total Package Power Dissipation
Derating (Ta≥25°C) (1 Circuit)
∆P /°C
−2.0
−1.7
mW /°C
Vrms
T
Isolation Voltage
(Note1)
BV
2500(AC,1min,R.H.≤60%)
S
(Note1)Device considered a two terminal device : LED side pins shorted together and
DETECTOR side pins shorted together.
INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25℃)
CHARACTERISTIC
Forward Voltage
SYMBOL
TEST CONDITION
= 10 mA
F
MIN.
TYP.
MAX. UNIT
V
I
I
1.0
—
1.15
—
1.3
10
—
V
F
Reverse Current
Capacitance
V
= 5 V
R
µA
pF
R
C
T
V = 0, f = 1 MHz
30
—
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
V
V
I
I
= 0.5 mA
= 0.1 mA
80
7
V
—
—
—
—
(BR) CEO
(BR) ECO
C
E
V
V
= 48 V,
CE
0.01
(2)
0.1
Ambient Light Below
µA
—
(10)
Collector Dark Current
(100 ℓx)
I
CEO
(Note2)
V
= 48 V, Ta = 85°C
CE
2
50
Ambient Light Below
µA
pF
—
—
(4)
(50)
(100 ℓx)
Capacitance
C
CE
V = 0, f = 1 MHz
10
—
(Collector to Emitter)
(Note 2) Because of the construction,leak current might be increased by ambient light.
Please use photocoupler with less ambient light.
2
2002-06-27
TLP281,TLP281-4
COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25℃)
CHARACTERISTIC
Current Transfer Ratio
SYMBOL
/ I
TEST CONDITION
= 5 mA, V = 5 V
MIN.
TYP.
MAX. UNIT
I
50
100
—
600
%
—
—
60
F
CE
I
C
F
Rank GB
600
IF = 1 mA, VCE = 0.4 V
—
%
Saturated CTR
I
/ I
C
V
F (sat)
Rank GB
30
—
—
—
—
I
I
= 2.4 mA, I = 8 mA
F
0.4
C
C
Collector-Emitter
V
= 0.2 mA, I = 1 mA
F
0.2
—
0.4
10
—
CE (sat)
Saturation Voltage
Rank GB
—
—
—
Off-State Collector Current
I
V
= 0.7 V, V = 48 V
F CE
µA
—
C (off)
ISOLATION CHARACTERISTICS (Ta = 25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
= 0 V, f = 1 MHz
MIN.
—
TYP.
0.8
MAX. UNIT
Capacitance
C
S
V
V
pF
—
S
S
(Input to Output)
10
14
Isolation Resistance
R
S
= 500 V, R.H.≤60%
5×10
2500
—
10
Ω
—
—
—
—
AC , 1 minute
—
Vrms
Vdc
Isolation Voltage
BV
S
AC , 1 second,in OIL
DC , 1 minute, in OIL
5000
5000
—
SWITCHING CHARACTERISTICS (Ta = 25℃)
CHARACTERISTIC
Rise Time
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
µs
—
—
—
—
—
—
—
t
r
2
3
—
—
—
—
—
—
—
Fall Time
t
f
V
= 10 V, I = 2 mA
C
CC
R = 100Ω
L
Turn-On Time
Turn-Off Time
Turn-On Time
Storage Time
Turn-Off Time
t
3
on
t
3
off
t
2
ON
R = 1.9 kΩ (Fig.1)
L
CC
µs
t
25
40
s
V
= 5 V, I = 16 mA
F
t
OFF
(Fig.1)SWITCHING TIME TEST CIRCUIT
3
2002-06-27
TLP281,TLP281-4
TLP281
TLP281-4
TLP281
TLP281-4
4
2002-06-27
TLP281,TLP281-4
5
2002-06-27
TLP281,TLP281-4
6
2002-06-27
TLP281,TLP281-4
RESTRICTIONS ON PRODUCT USE
000707EBC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
7
2002-06-27
相关型号:
©2020 ICPDF网 联系我们和版权申明