TLP291(TL,SE [TOSHIBA]
Transistor Output Optocoupler;型号: | TLP291(TL,SE |
厂家: | TOSHIBA |
描述: | Transistor Output Optocoupler |
文件: | 总15页 (文件大小:456K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLP291(SE
Photocouplers Infrared LED & Photo Transistor
TLP291(SE
1. Applications
•
•
•
Switching Power Supplies
Programmable Logic Controllers (PLCs)
I/O Interface Boards
2. General
TLP291(SE consists of photo transistor optically coupled to an infrared emitting diode.
TLP291(SE is housed in the SO4 package, very small and thin coupler.
Since TLP291(SE is guaranteed wide operating temperature (Ta = -55 to
110 ) and high isolation voltage (3750 Vrms), it's suitable for high-density
surface mounting applications such as small switching power supplies and
programmable controllers.
3. Features
(1) Collector-emitter voltage: 80 V (min)
(2) Current transfer ratio: 50 % (min)
GB Rank: 100 % (min)
(3) Isolation voltage: 3750 Vrms (min)
(4) Operating temperature: -55 to 110
(5) Safety standards
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)
CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory
Note 1: When a VDE approved type is needed, please designate the Option (V4).
4. Packaging and Pin Assignment
1: Anode
2: Cathode
3: Emitter
4: Collector
11-3C1
Start of commercial production
2012-02
©2016-2019
2019-07-08
Rev.2.0
1
Toshiba Electronic Devices & Storage Corporation
TLP291(SE
5. Mechanical Parameters
Characteristics
Min
Unit
mm
Creepage distances
Clearance
5.0
5.0
0.4
Internal isolation thickness
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Input forward current
Symbol
Note
Rating
Unit
LED
IF
∆IF/∆Ta
IFP
50
-1.5
1
mA
mA/
A
Input forward current derating
Input forward current (pulsed)
Input reverse voltage
(Ta ≥ 90 )
(Ta ≥ 90 )
(Note 1)
VR
5
V
Input power dissipation
PD
100
-3.0
125
80
mW
mW/
Input power dissipation derating
Junction temperature
∆PD/∆Ta
Tj
Detector Collector-emitter voltage
Emitter-collector voltage
Collector current
VCEO
VECO
IC
V
7
V
50
mA
Collector power dissipation
PC
150
-1.5
mW
mW/
Collector power dissipation
derating
(Ta ≥ 25 )
∆PC/∆Ta
Junction temperature
Common Operating temperature
Storage temperature
Tj
Topr
125
-55 to 110
-55 to 125
260
Tstg
Lead soldering temperature
Total power dissipation
(10 s)
Tsol
PT
200
mW
mW/
Vrms
Total power dissipation derating
Isolation voltage
(Ta ≥ 25 )
∆PT/∆Ta
BVS
-2.0
AC, 60 s, R.H. ≤ 60 %
(Note 2)
3750
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 0.1 ms, f = 100 Hz
Note 2: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
7. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Input forward voltage
Symbol
Note
Test Condition
IF = 10 mA
Min
Typ.
Max
Unit
LED
VF
IR
1.1
1.25
1.4
5
V
µA
pF
V
Input reverse current
Input capacitance
VR = 5 V
Ct
V = 0 V, f = 1 MHz
IC = 0.5 mA
30
Detector Collector-emitter breakdown
voltage
V(BR)CEO
80
Emitter-collector breakdown
voltage
V(BR)ECO
IDARK
IE = 0.1 mA
7
V
Dark Current
VCE = 48 V
0.001
2
0.08
50
µA
VCE = 48 V, Ta = 85
V = 0 V, f = 1 MHz
Collector-emitter capacitance
CCE
10
pF
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-07-08
Rev.2.0
2
TLP291(SE
8. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Current transfer ratio
Symbol
IC/IF
Note
Test Condition
Min
Typ.
Max
Unit
%
(Note 1) IF = 5 mA, VCE = 5 V
IF = 5 mA, VCE = 5 V, Rank GB
50
100
600
600
Saturated current transfer ratio
IC/IF(sat)
IF = 1 mA, VCE = 0.4 V
60
IF = 1 mA, VCE = 0.4 V, Rank GB
IC = 2.4 mA, IF = 8 mA
30
Collector-emitter saturation voltage VCE(sat)
VCE(sat)
0.3
V
IC = 0.2 mA, IF = 1 mA
0.12
IC = 0.2 mA, IF = 1 mA, Rank GB
VF = 0.7 V, VCE = 48 V
0.3
10
OFF-state collector current
IC(off)
µA
Note 1: See Table 8.1 for current transfer ratio.
Table 8.1 Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, Ta = 25 )
Rank
short
code
Current transfer ratio Current transfer ratio
Marking of
classification
Rank
Blank
Note
Test Condition
IC/IF
IC/IF
Unit
%
(min)
(max)
IF = 5 mA, VCE = 5 V
50
600
Blank, YE, GR, GB,
BL, Y+, G, G+, B
Y
GL
GH
B
IF = 5 mA, VCE = 5 V
IF = 5 mA, VCE = 5 V
IF = 5 mA, VCE = 5 V
IF = 5 mA, VCE = 5 V
IF = 5 mA, VCE = 5 V
50
150
300
600
600
150
200
300
400
YE, Y+
GR
GB
100
100
200
75
GR, G, G+
GB, GR, G, G+, BL, B
BL
BL, B
Y+
G
YH
GRL
GRH
BLL
(Note 1) IF = 5 mA, VCE = 5 V
(Note 1) IF = 5 mA, VCE = 5 V
(Note 1) IF = 5 mA, VCE = 5 V
100
150
200
G+
B
Note: Specify both the part number and a rank in this format when ordering.
Example: TLP291(GB,SE
For safety standard certification, however, specify the part number alone.
Example: TLP291(GB,SE → TLP291
Note 1: A rank in the order name is sometimes omitted like above "Rank short code".
9. Isolation Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Test Condition
Min
Typ.
Max
Unit
Total capacitance (input to output)
Isolation resistance
CS
RS
(Note 1) VS = 0 V, f = 1 MHz
(Note 1) VS = 500 V, R.H. ≤ 60 %
(Note 1) AC, 60 s
0.8
1014
pF
Ω
1 × 1012
3750
Isolation voltage
BVS
Vrms
Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-07-08
Rev.2.0
3
TLP291(SE
10. Switching Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Test Condition
Min
Typ.
Max
Unit
Rise time
Fall time
tr
VCC = 10 V, IC = 2 mA,
RL = 100 Ω
2
3
µs
tf
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
ton
toff
ton
ts
3
3
See Fig. 10.1
RL = 1.9 kΩ, VCC = 5 V,
IF = 16 mA
0.5
25
40
toff
Fig. 10.1 Switching Time Test Circuit and Waveform
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-07-08
Rev.2.0
4
TLP291(SE
11. Characteristics Curves (Note)
Fig. 11.1 IF - Ta
Fig. 11.2 PC - Ta
Fig. 11.3 IFP - DR
Fig. 11.4 IF - VF
Fig. 11.5 ∆VF/∆Ta - IF
Fig. 11.6 IFP - VFP
©2016-2019
2019-07-08
Rev.2.0
5
Toshiba Electronic Devices & Storage Corporation
TLP291(SE
Fig. 11.7 IC - VCEO
Fig. 11.8 IC - VCEO
Fig. 11.9 IDARK - Ta
Fig. 11.10 VCE(sat) - Ta
Fig. 11.11 IC - IF
Fig. 11.12 IC/IF - IF
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-07-08
Rev.2.0
6
TLP291(SE
Fig. 11.13 IC - Ta
Fig. 11.14 Switching Time - RL
Fig. 11.15 Switching Time - Ta
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-07-08
Rev.2.0
7
TLP291(SE
12. Soldering and Storage
12.1. Precautions for Soldering
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective
of whether a soldering iron or a reflow soldering method is used.
•
When using soldering reflow.
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below, which is based on the package surface temperature.)
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
Fig. 12.1.1 An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used
•
•
When using soldering flow
Preheat the device at a temperature of 150 (package surface temperature) for 60 to 120 seconds.
Mounting condition of 260 within 10 seconds is recommended.
Flow soldering must be performed once.
When using soldering Iron
Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not
exceeding 350
Heating by soldering iron must be done only once per lead.
12.2. Precautions for General Storage
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•
•
Avoid storage locations where devices may be exposed to moisture or direct sunlight.
Follow the precautions printed on the packing label of the device for transportation and storage.
Keep the storage location temperature and humidity within a range of 5 to 35 and 45 % to 75 %,
respectively.
•
•
Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
•
•
•
When restoring devices after removal from their packing, use anti-static containers.
Do not allow loads to be applied directly to devices while they are in storage.
If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
©2016-2019
2019-07-08
Rev.2.0
8
Toshiba Electronic Devices & Storage Corporation
TLP291(SE
13. Land Pattern Dimensions (for reference only)
Unit: mm
14. Marking
©2016-2019
2019-07-08
Rev.2.0
9
Toshiba Electronic Devices & Storage Corporation
TLP291(SE
15. EN 60747-5-5 Option (V4) Specification
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Part number: TLP291 (Note 1)
•
The following part naming conventions are used for the devices that have been qualified according to
option (V4) of EN 60747.
Example: TLP291(V4GBTL,SE
V4: EN 60747 option
GB: CTR rank
TL: Tape type (L direction:TPL)
E: [[G]]/RoHS COMPATIBLE (Note 2)
Note 1: Use TOSHIBA standard type number for safety standard application.
e.g., TLP291(V4GBTL,SE → TLP291
Note 2: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Fig. 15.1 EN 60747 Insulation Characteristics
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-07-08
Rev.2.0
10
TLP291(SE
Table Insulation Related Specifications (Note)
Insulation Related Parameters
Symbol
TLP291
Minimum creepage distance
Minimum clearance
Cr
Cl
5.0 mm
5.0 mm
0.4 mm
175
Minimum insulation thickness
Comparative tracking index
ti
CTI
Note: This photocoupler is suitable for safe electrical isolation only within the safety limit data.
Maintenance of the safety data shall be ensured by means of protective circuits.
Fig. 15.2 Marking on packing for EN 60747
Fig. 15.3 Marking Example (Note)
Note: Theabovemarkingisappliedtothephotocouplersthathavebeenqualifiedaccordingtooption(V4)ofEN60747.
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-07-08
Rev.2.0
11
TLP291(SE
Fig. 15.4 Measurement Procedure
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-07-08
Rev.2.0
12
TLP291(SE
15.1. Ordering Information
When placing an order, please specify the part number, CTR rank, tape type and quantity as shown in the
following example.
Example) TLP291(GB-TP,SE 5000 pcs
Part number: TLP291
CTR rank: GB
Tape type: TP (L direction)
[[G]]/RoHS COMPATIBLE: E (Note 1)
Quantity (must be a multiple of 2500): 5000 pcs
Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-07-08
Rev.2.0
13
TLP291(SE
Package Dimensions
Unit: mm
Weight: 0.05 g (typ.)
Package Name(s)
TOSHIBA: 11-3C1
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2019-07-08
Rev.2.0
14
TLP291(SE
RESTRICTIONS ON PRODUCT USE
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Hardware, software and systems described in this document are collectively referred to as "Product".
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Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
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AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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©2016-2019
2019-07-08
Rev.2.0
15
Toshiba Electronic Devices & Storage Corporation
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