TLP3061S [TOSHIBA]
OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TRIAC DRIVER SOLID STATE RELAY; 办公设备家庭使用的设备TRIAC驱动固态继电器型号: | TLP3061S |
厂家: | TOSHIBA |
描述: | OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TRIAC DRIVER SOLID STATE RELAY |
文件: | 总6页 (文件大小:157K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLP3061(S),TLP3062(S),TLP3063(S)
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC
TLP3061(S),TLP3062(S),TLP3063(S)
Unit: mm
OFFICE MACHINE
HOUSEHOLD USE EQUIPMENT
TRIAC DRIVER
SOLID STATE RELAY
The TOSHIBA TLP3061 (S), TLP3062 (S), TLP3063 (S) consist of a zero
voltage crossing turn-on photo-triac optically coupled to a gallium
arsenide infrared emitting diode in a six lead plastic DIP package.
•
•
Peak Off-State Voltage
Trigger LED Current
: 600 V (min)
: 15 mA (max) (TLP3061(S))
10 mA (max) (TLP3062(S))
5 mA (max) (TLP3063(S))
•
•
•
•
On-State Current
Isolation Voltage
UL Recognized
: 100 mA (max)
: 5000 Vrms (min)
JEDEC
EIAJ
―
―
: UL1577, File No. E67349
: SS EN60065
SEMKO Approved
TOSHIBA
weight: 0.39g
11-7A9
SS EN60950, File No.9841113
: BS EN60065, File No.8385
BS EN60950, File No.8386
•
•
BSI Approved
Option (D4) type
Pin Configuration
(top view)
VDE approved: DIN EN60747-5-2
Approved No. 40009302
1
2
3
6
Maximum operating insulation voltage: 890VPK
Highest permissible over voltage: 8000VPK
(Note):When a EN60747-5-2 approved type is needed,
please designate the "Option (D4)"
ZC
4
•
Construction mechanical rating
1: Anode
7.62 mm pich
Standard Type
10.16 mm pich
TLPxxxxF type
2: Cathode
3: N.C.
Creepage Distance
Clearance
Insulation Thickness
7.0 mm (Min)
7.0 mm (Min)
0.5 mm (Min)
8.0 mm (Min)
8.0 mm (Min)
0.5 mm (Min)
4:Terminal 1
6:Terminal 2
ZC:Zero-cross Circuit
1
2007-10-01
TLP3061(S),TLP3062(S),TLP3063(S)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
50
mA
F
Forward current derating (Ta ≥ 53°C)
ΔI / °C
F
−0.7
mA / °C
Peak forward current
(100 μs pulse, 100 pps)
I
1
A
FP
Power dissipation
P
100
−1.0
5
mW
D
Power dissipation derating (Ta ≥ 25°C)
Reverse voltage
ΔP / °C
mW / °C
D
V
V
°C
V
R
Junction temperature
T
125
600
100
50
j
Off−state output terminal voltage
V
DRM
Ta = 25°C
On−state RMS current
I
mA
T(RMS)
Ta = 70°C
On−state current derating (Ta ≥ 25°C)
ΔI / °C
−1.1
mA / °C
A
T
Peak on−state current
(100μs pulse, 120 pps)
I
2
TP
Peak nonrepetitive surge
I
1.2
A
TSM
current (P = 10 ms, DC = 10%)
w
Power dissipation
P
300
−4.0
mW
mW / °C
°C
D
Power dissipation derating (Ta ≥ 25°C)
Junction temperature
ΔP / °C
D
T
115
j
Storage temperature range
T
−55~150
−40~100
260
°C
stg
opr
Operating temperature range
Lead soldering temperature (10 s)
Total package power dissipation
T
°C
T
°C
sol
P
330
mW
T
Total package power dissipation derating
(Ta ≥ 25°C)
ΔP / °C
−4.4
mW / °C
Vrms
T
Isolation voltage
(AC, 1 min., R.H.≤ 60%)
BV
5000
S
(Note 1)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Forward current
V
―
15
―
20
―
―
240
25
1
Vac
mA
A
AC
I *
F
Peak on−state current
I
―
TP
Operating temperature
T
opr
−25
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
※ In the case of TLP3062
2
2007-10-01
TLP3061(S),TLP3062(S),TLP3063(S)
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
= 10 mA
F
Min.
Typ.
Max.
Unit
V
I
1.0
―
―
―
―
―
1.15
―
1.3
10
V
μA
pF
nA
V
F
Reverse current
I
V = 5 V
R
R
Capacitance
C
V = 0, f = 1 MHz
= 600 V
10
―
T
Peak off−state current
Peak on−state voltage
Holding current
I
V
10
1000
3.0
―
DRM
DRM
= 100 mA
TM
V
I
1.7
0.6
TM
I
―
mA
H
Critical rate of rise of
off−state voltage
V
V
= 240 Vrms, Ta = 85°C
in
in
dv / dt
200
500
0.2
―
―
V / μs
V / μs
(Fig.1)
(Fig.1)
Critical rate of rise of
commutating voltage
= 60 Vrms, I = 15mA
T
dv / dt (c)
―
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
TLP3061(S)
Symbol
Test Condition
Min.
Typ.
Max.
Unit
mA
―
―
―
―
―
5
15
10
5
Trigger LED current
I
FT
V = 6 V
T
TLP3062(S)
TLP3063(S)
―
―
Inhibit voltage
V
I
I
= rated I
= rated I
50
V
IH
F
FT
FT
F
Leakage in inhibited state
I
―
100
300
μA
IH
V
V
V
= rated V
T
S
S
DRM
Capacitance input to output
Isolation resistance
C
R
= 0, f = 1 MHz
―
5×1010
5000
―
0.8
1014
―
―
―
―
―
pF
S
S
= 500 V (R.H.≤ 60%)
Ω
AC, 1 minute
―
Vrms
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
10000
10000
―
V
dc
Fig. 1
dv / dt test circuit
+
+5V,V
R
CC
0V
dv / dt(c) dv / dt
in
V
in
6
4
1
2
3
V
CC
120Ω
~
R
L
−
4kΩ
3
2007-10-01
TLP3061(S),TLP3062(S),TLP3063(S)
I
– T
I
– T
a
F
a
T(RMS)
60
50
120
100
40
30
20
80
60
40
10
0
20
0
-20
0
20
40
60
80
100
120
-20
0
20
40
60
80
100
120
1.8
3.0
Ambient temperature Ta (℃)
– D
Ambient temperature Ta (℃)
I
I
– V
FP
R
F
F
100
3000
1000
Pulse width≦100μs
Ta=25℃
Ta=25℃
50
30
500
300
10
5
3
100
1
50
30
0.5
0.3
10
3
0.1
100
3
2
1
10-
3
10-
3
10-
R
3
1.0
1.2
1.4
1.6
0.6
0.8
Forward voltage V (V)
Duty cycle ration D
ΔV / ΔTa – I
F
I
– V
FP
F
F
FP
1000
-3.2
-2.8
500
300
-2.4
-2.0
-1.6
-1.2
100
50
30
10
Pulse width≦10μs
Repetitive frequency
=100Hz
5
3
-0.8
-0.4
Ta=25℃
1
0.6
0.1
0.3 0.5
1
3
5
10
30 50
1.0
1.4
2.2
2.6
1.8
Pulse forward voltage
V
(V)
Forward current I (mA)
FP
F
4
2007-10-01
TLP3061(S),TLP3062(S),TLP3063(S)
Normalized
I
FT
- Ta
Normalized
I
H
- Ta
3
2
3
2
V
=3V
T
1.2
1.2
1
1
0.5
0.3
0.5
0.3
0.1
-40
0.1
-40
60
100
-20
0
20
40
80
100
-20
0
20
40
80
60
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
Normalized
I
- Ta
Normalized
V
- Ta
DRM
DRM
103
102
1.4
V
=Rated
DRM
1.2
1.0
0.8
0.6
0.4
0.2
101
100
100
100
0
-40
60
20
40
60
80
-20
0
20
40
80
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
Normalized
V
- Ta
Normalized
I
IH
- Ta
IH
3
2
3
2
1.2
1
1.2
1
0.5
0.3
0.5
0.3
I
= Rated I
F
FT
V
= Rated V
I
= Rated I
T
DRM
F
FT
0.1
-40
0.1
-40
60
100
60
100
-20
0
20
40
80
-20
0
20
40
80
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
5
2007-10-01
TLP3061(S),TLP3062(S),TLP3063(S)
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-10-01
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