TLP3064(S) [TOSHIBA]

Optocoupler - Trigger Device Output, 1 CHANNEL TRIAC OUTPUT WITH ZERO CRSVR OPTOCOUPLER, PLASTIC, 11-7A9, DIP-6;
TLP3064(S)
型号: TLP3064(S)
厂家: TOSHIBA    TOSHIBA
描述:

Optocoupler - Trigger Device Output, 1 CHANNEL TRIAC OUTPUT WITH ZERO CRSVR OPTOCOUPLER, PLASTIC, 11-7A9, DIP-6

可控硅 光电 二极管 三端双向交流开关 输出元件
文件: 总6页 (文件大小:170K)
中文:  中文翻译
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TLP3064  
TOSHIBA Photocoupler GaAs Ired & PhotoTriac  
TLP3064  
Office Machine  
Household Use Equipment  
Triac Driver  
Unit in mm  
Solid State Relay  
The TOSHIBA TLP3064 consists of a zero voltage crossing turnon  
phototriac optically coupled to a GaAAs infrared emitting diode in a  
six lead plastic DIP package.  
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Peak offstate voltage: 600V(min.)  
Trigger LED current: 3mA(max.)  
Onstate current: 100mA(max.)  
Isolation voltage: 5000Vrms(min.)  
UL recognized: UL1577, file no. E67349  
Option(D4) type  
VDE approved: DIN VDE0884 / 06.92,  
Certificate no.83649  
Maximum operating insulation voltage: 890V  
Highest permissible over voltage: 8000V  
PK  
PK  
TOSHIBA  
119A2  
Weight: 0.44 g  
(Note) When a VDE0884 approved type is needed,  
please designate the “Option(D4)”  
7.62mm pich  
standard type  
Creepage distance: 7.0mm(min.)  
Clearance: 7.0mm(min.)  
10.16mm pich  
(LF2)type  
8.0mm(min.)  
8.0mm(min.)  
0.5mm(min.)  
Pin Configurations(top view)  
·
1
2
3
6
Insulation thickness: 0.5mm(min.)  
4
ZC  
1: ANODE  
2: CATHODE  
3: N.C.  
4: TERMINAL 1  
6: TERMINAL 2  
(ZC : Zero-cross Circuit)  
1
2002-09-25  
TLP3064  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
30  
Unit  
mA  
Forward current  
I
F
Forward current derating  
I / °C  
F
-0.3  
mA / °C  
(Ta 25°C)  
Peak forward current  
(100µs pulse, 100pps)  
I
1
A
FP  
Reverse voltage  
V
5
V
R
Junction temperature  
T
125  
°C  
j
Off-state output terminal  
V
600  
V
DRM  
voltage  
Ta=25°C  
Ta=70°C  
100  
50  
On-state RMS  
I
mA  
T(RMS)  
current  
On-state current derating  
(Ta 25°C)  
I / °C  
-1.1  
2
mA / °C  
T
Peak on-state current  
I
A
A
TP  
(100µs pulse, 120pps)  
Peak nonrepetitive surge  
I
1.2  
TSM  
current (P =10ms, DC=10%)  
W
Junction temperature  
T
115  
°C  
°C  
°C  
°C  
j
Storage temperature range  
T
-55~150  
-40~100  
260  
stg  
opr  
Operating temperature range  
T
Lead soldering temperature (10s)  
T
sol  
Isolation voltage  
BV  
5000  
Vrms  
S
(AC, 1min., R.H. 60%)  
(Note 1)  
(Note 1) Device considered a two terminal device=Pins 1, 2 and 3 shorted together  
and pins 4 and 6 shorted together.  
Recommended Operating Conditions  
Characteristic  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Supply voltage  
Forward current  
V
4.5  
6
240  
7.5  
1
Vac  
mA  
A
AC  
I
F
Peak on-state current  
I
TP  
Operating temperature  
T
-10  
85  
°C  
opr  
2
2002-09-25  
TLP3064  
Individual Electrical Characteristics (Ta = 25°C)  
Characteristic  
Forward voltage  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
V
I =10mA  
1.2  
1.4  
1.7  
10  
V
µA  
pF  
nA  
V
F
F
Reverse current  
I
V =3 V  
R
R
Capacitance  
C
T
V=0, f=1MHz  
=600V  
30  
10  
Peak off-state current  
Peak on-state voltage  
Holding current  
I
V
1000  
3.0  
DRM  
DRM  
V
I
=100mA  
TM  
TM  
I
0.6  
mA  
H
Critical rate of rise of  
V =240rms  
in  
dv / dt  
200  
500  
0.2  
V / µs  
V / µs  
off-state voltage  
Ta=85°C  
Critical rate of rise of  
commutating voltage  
V =60Vrms  
in  
dv / dt(c)  
I =15mArms  
T
Coupled Electrical Characteristics (Ta = 25°C)  
Characteristics  
Trigger LED current  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
I
V =6V, resistive load  
3
mA  
V
FT  
T
Inhibit voltage  
V
I =rated I  
F
50  
IH  
FT  
I =rated I  
F
FT  
Leakage in inhibited state  
I
600  
µA  
IH  
V =rated V  
T
DRM  
Capacitance input to output  
Isolation resistance  
C
R
V =0, f=1MHz  
S
1×1012  
5000  
0.8  
1014  
pF  
S
V =500V, R.H. 60%  
S
S
AC, 1 minute  
Vrms  
Vdc  
Isolation voltage  
BV  
S
AC, 1 second, in oil  
DC, 1 minute, in oil  
10000  
10000  
3
2002-09-25  
TLP3064  
ΔV / ΔTa – I  
F
F
I
Ta  
F
4.0  
3.6  
3.2  
2.8  
100  
80  
60  
2.4  
2.0  
40  
1.6  
1.2  
0.8  
20  
0
0.1  
0.3 0.5  
1
3
5
10  
30  
20  
0
20  
40  
60  
80  
100  
Forward current  
I
(A)  
F
Ambient temperature Ta ()  
I
– V  
I
– D  
R
F
F
FP  
100  
5000  
3000  
Ta25℃  
Pulse width100µs  
Ta=25℃  
50  
30  
1000  
500  
300  
10  
100  
5
3
50  
30  
1
10  
100  
3
2
1
1.4  
1.6  
1.8  
2.0  
2.2  
1.0  
1.2  
3
10  
3
10  
3
10  
R
3
Rorward voltage V V)  
Duty cycle ratio  
D
F
I
Ta  
T(RMS)  
120  
100  
80  
60  
40  
20  
0
20  
0
20  
40  
60  
80  
100  
120  
Ambient temperature Ta ()  
4
2002-09-25  
TLP3064  
Normalized  
I
Ta  
Normalized  
I
Ta  
FT  
H
3
2
3
2
V
T
=6V  
1.2  
1
1.2  
1
0.5  
0.3  
0.5  
0.3  
0.1  
0.1  
40  
60  
100  
20  
0
20  
40  
80  
100  
40  
0
20  
40  
80  
20  
60  
Ambient temperature Ta ()  
Ambient temperature Ta ()  
Normalized  
I
Ta  
Normalized  
V
Ta  
DRM  
DRM  
103  
102  
1.4  
V
DRM  
=Rated  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
101  
100  
100  
100  
0
60  
Ambient temperature Ta ()  
80  
40  
40  
60  
80  
20  
40  
20  
0
20  
Ambient temperature Ta ()  
Normalized  
V
Ta  
Normalized  
I
Ta  
IH  
IH  
3
2
3
2
1.2  
1
1.2  
1
0.5  
0.3  
0.5  
0.3  
I
Rated I  
FT  
F
V
T
Rated V  
DRM  
I
Rated I  
F
FT  
0.1  
0.1  
40  
60  
100  
40  
60  
Ambient temperature Ta ()  
100  
20  
0
20  
40  
80  
20  
0
20  
40  
80  
Ambient temperature Ta ()  
5
2002-09-25  
TLP3064  
RESTRICTIONS ON PRODUCT USE  
000707EBC  
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
·
Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes  
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the  
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with  
domestic garbage.  
·
·
The products described in this document are subject to the foreign exchange and foreign trade laws.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
·
The information contained herein is subject to change without notice.  
6
2002-09-25  

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