TLP350_07 [TOSHIBA]
GaAГAs IRED + Photo IC; GaAℓAs IRED +图片IC
| 型号： | TLP350_07 |
| 厂家： | 
TOSHIBA |
| 描述： | GaAГAs IRED + Photo IC |
| 文件： | 总9页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP350
TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP350
Industrial Inverter
Inverter for Air Conditioner
IGBT/Power MOSFET Gate Drive
IH(Induction Heating)
Unit: mm
The TOSHIBA TLP350 consists of a GaAℓAs light-emitting diode and an
integrated photodetector.
This unit is an 8-lead DIP package.
The TLP350 is suitable for gate driving IGBTs or power MOSFETs.
•
•
•
•
•
•
•
•
•
•
Peak output current : IO = ±2.5A (max)
Guaranteed performance over temperature : −40 to 100°C
Supply current : ICC = 2 mA (max)
Power supply voltage: VCC = 15 to 30 V
Threshold input current : I
= 5 mA (max)
FLH
Switching time (t
/t
) : 500 ns (max)
pLH pHL
Common mode transient immunity : 15 kV/μs
Isolation voltage : 3750 Vrms
UL Recognized : UL1577,File No.E67349
Option(D4)
TOSHIBA
11-10C4
VDE Approved : DIN EN 60747-5-2
Maximum Operating Insulation Voltage : 890VPK
Weight: 0.54 g (typ.)
Highest Permissible Over Voltage
: 6000VPK
(Note):When a EN 60747-5-2 approved type is needed,
Please designate “Option(D4)”
Truth Table
Pin Configuration (top view)
1: NC
1
2
3
4
8
7
6
5
Input
LED
Tr1
Tr2
Output
2: Anode
3: Cathode
4: NC
H
L
ON
ON
OFF
ON
H
L
OFF
OFF
5: GND
6: V (output)
O
7: NC
8: V
CC
Schematic
I
CC
8
V
CC
(Tr1)
(Tr2)
I
F
2+
I
V
O
F
6
V
3−
O
5
GND
A 0.1 μF bypass capacitor must be connected
between pins 8 and 5. (See Note 6)
1
2007-10-01
TLP350
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
20
−0.54
1
mA
mA/°C
A
F
Forward current derating (Ta ≥ 85°C)
ΔI /ΔTa
F
Peak transient forward current
Reverse voltage
(Note 1)
I
FP
V
5
V
R
Junction temperature
“H” peak output current
“L” peak output current
Supply voltage
T
125
°C
j
I
−2.5
2.5
A
OPH
Ta = −40 to 100°C
(Note 2)
I
A
OPL
Ta < 95 °C
V
35
V
CC
Supply voltage Derating
Junction temperature
Ta ≥ 95 °C
Δ
V
/Δ
Ta
-1.0
V /℃
°C
CC
T
125
j
Operating frequency
(Note 3)
f
50
kHz
°C
Storage temperature range
T
−55 to 125
−40 to 100
260
stg
Operating temperature range
Lead soldering temperature (10 s)
T
°C
opr
(Note 4)
T
°C
sol
Isolation voltage (AC, 1 minute, R.H. ≤ 60%)
(Note 5)
BV
3750
Vrms
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width P ≤ 1 μs, 300 pps
W
Note 2: Exponential waveform pulse width P ≤ 0.3μs, f ≤ 15kHz
W
Note 3: Exponential waveform I
≥ -2.0A (≤ 0.3μs), I
≤ 2.0A (≤ 0.3μs)
OPH
OPL
Note 4: At 2 mm or more from the lead root.
Note 5: This device is regarded as a two terminal device: pins 1, 2, 3 and 4 are shorted together, as are pins 5, 6, 7
and 8.
Note 6: A ceramic capacitor(0.1 μF) should be connected from pin 8 to pin 5 to stabilize the operation of the high
gain linear amplifier. Failure to provide the bypass may impair the switching property.
The total lead length between capacitor and coupler should not exceed 1 cm.
Recommended Operating Conditions
Characteristic
Input current, ON
Symbol
Min
Typ.
Max
Unit
(Note 7)
I
7.5
0
⎯
⎯
⎯
⎯
⎯
10
0.8
30
mA
V
F (ON)
Input voltage, OFF
Supply voltage
V
F (OFF)
V
15
⎯
V
CC
/I
Peak output current
Operating temperature
I
±2.0
100
A
OPH OPL
T
opr
−40
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Note 7: Input signal rise time (fall time) < 0.5 μs.
Note 8: If the rising slope of the supply voltage (VCC) for the detector is steep, stable operation of the internal
circuits cannot be guaranteed.
Be sure to set 3.0V/μs or less for a rising slope of the VCC.
2
2007-10-01
TLP350
Electrical Characteristics (Ta = −40 to 100°C, unless otherwise specified)
Test
Circuit
Characteristic
Forward voltage
Symbol
Test Conditions
= 10 mA, Ta = 25°C
= 10 mA
Min
⎯
Typ.*
1.6
Max
1.8
⎯
Unit
V
V
⎯
I
I
F
F
F
Temperature coefficient of forward
voltage
∆V /∆Ta
⎯
⎯
−2.0
mV/°C
F
Input reverse current
Input capacitance
I
⎯
⎯
V
= 5 V, Ta = 25°C
R
⎯
⎯
⎯
10
μA
R
C
V = 0 , f = 1 MHz,Ta = 25°C
45
250
pF
T
V
V
V
V
V
V
V
V
= 30 V,I = 5 mA
CC
8-6
CC
8-6
CC
6-5
CC
6-5
F
⎯
−1.6
-1.0
-2.0
⎯
= -3.5 V
“H” Level
I
1
2
OPH
= 15 V,I = 5 mA
F
⎯
1.0
2.0
⎯
Output current
= -7.0 V
A
(Note 9)
= 30 V,I = 0 mA
F
1.6
= 2.5V
“L” Level
I
OPL
= 15 V,I = 0 mA
F
⎯
⎯
⎯
= 7.0V
V
V
= +15 V
= -15 V
CC 1
“H” Level
“L” Level
V
3
4
I
= 5 mA
F
11
13.7
OH
Output voltage
Supply current
V
EE 1
V
V
= 0.8 V
F
⎯
-14.9 -12.5
OL
R = 200 Ω
L
“H” Level
“L” Level
L → H
I
5
I
I
= 10 mA
= 0 mA
⎯
⎯
1.3
1.3
1.8
⎯
2.0
2.0
5
CCH
F
F
V
V
= 30 V
CC
open
mA
O
I
6
CCL
Threshold input current
Threshold input voltage
Supply voltage
I
⎯
⎯
⎯
⎯
⎯
―
⎯
mA
V
VCC = 15V , VO > 1V , Io = 0mA
VCC = 15V , VO < 1V , Io = 0mA
⎯
FLH
H → L
V
0.8
15
⎯
FHL
V
⎯
30
V
CC
V
11.0
9.5
―
13.5
12.0
―
12.5
11.0
1.5
V
UVLO+
UVLO threshhold
UVLO hysteresis
V
> 2.5 V , I = 5 mA
F
O
V
V
UVLO-
UVLO
―
V
HYS
*: All typical values are at Ta = 25°C
Note 9: Duration of I : ≤ 50 μs(1PULSE)
O
Note 10: This product is more sensitive to static electricity (ESD) than the conventional product because of its
minimal power consumption design.
General static electricity precautions are necessary for handling this component.
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
V = 0,f = 1MHz
= 500 V, Ta = 25°C,
Min.
Typ.
1.0
Max.
Unit
pF
Capacitance input to output
C
R
(Note5)
(Note5)
⎯
⎯
S
S
V
S
12
14
Isolation resistance
Isolation voltage
1×10
10
―
Ω
R.H. ≤ 60%
AC,1 minute
3750
―
―
―
―
―
V
rms
BV
AC,1 second,in oil
DC,1 minute,in oil
10000
10000
S
―
Vdc
3
2007-10-01
TLP350
Switching Characteristics (Ta = −40 to 100°C, unless otherwise specified)
Test
Circuit
Characteristic
Symbol
Test Conditions
Min
Typ.*
Max
Unit
V
= 30 V
L → H
H → L
t
I
I
= 0 → 5 mA
= 5 → 0 mA
50
50
260
260
500
500
CC
g
g
pLH
F
Propagation delay time
R = 20 Ω
C = 10 nF
t
pHL
F
V
R
C
= 30 V
= 20 Ω,
= 10 nF
CC
g
g
Switching Time Dispersion
between ON and OFF
7
ns
⎯
⎯
350
|t
-t
|
pHL pLH
V
= 30 V
Output rise time (10-90%)
Output fall time (90-10%)
t
r
I
= 0 → 5 mA
= 5 → 0 mA
= 5 mA
⎯
⎯
15
8
⎯
⎯
CC
g
g
F
R = 20 Ω
C = 10 nF
t
f
I
F
Common mode transient immunity
at high level output
I
F
CM
−15000
⎯
⎯
⎯
⎯
H
V
= 1000 Vp-p
V
=26V
CM
O (min)
8
Ta = 25°C
V/μs
Common mode transient immunity
at low level output
I
F
= 0 mA
V
= 30 V
CC
CM
15000
L
V
=1V
O (max)
*: All typical values are at Ta = 25°C
Test Circuit 1: I
Test Circuit 2: I
OPH
OPL
8
8
1
1
V8-6
I
OPL
A
I
A
OPH
I
F
V
CC
V
CC
V
4
6-5
4
5
5
8
Test Circuit 3: V
Test Circuit 4: V
OH
OL
8
1
1
V
V
V
CC1
CC1
I
R
L
R
L
F
V
F
V
V
4
V
EE1
V
V
EE1
OH
OL
4
5
5
Test Circuit 5: I
Test Circuit 6: I
CCH
CCL
I
I
CCH
A
CCL
A
8
8
1
1
I
F
V
CC
V
CC
4
4
5
5
4
2007-10-01
TLP350
Test Circuit 7: t
, t
, t , t , PDD
pLH pHL
r
f
8
1
Vo
I
F
I
F
VOH
t
t
r
VCC
f
Cg =10 nF
90%
50%
10%
Rg = 20 Ω
V
O
4
5
t
pHL
t
pLH
VOL
Test Circuit 8: CM , CM
H
L
1000 V
90%
10%
8
5
1
I
V
F
CM
SW
V
O
V
CC
A
B
t
t
f
r
4
SW A: I = 5 mA
F
CM
CM
H
L
26V
V
V
O
CM
1V
+
−
SW B: I = 0 mA
F
800(V)
800(V)
CM
=
CM
=
H
L
(μs)
t
f
(μs)
t
r
CM (CM ) is the maximum rate of rise (fall) of the common mode voltage that can be
L
H
sustained with the output voltage in the low (high) state.
5
2007-10-01
TLP350
I
─ V
F
⊿ V ⊿ Ta- I
F/
F
F
－2.6
－2.4
－2.2
－2.0
－1.8
100
Ta = 25 °C
50
30
10
5
3
1
0.5
0.3
0.1
－1.6
－1.4
0.05
0.03
0.01
1.0
1
0.1
0.3
3
5
30
10
0.5
1.4
1.8
2.0
1.2
1.6
Forward Voltage V (V)
Forward Current I (mA)
F
F
V
-Ta
I
-Ta
CC
F
40
40
30
20
10
0
30
20
10
0
-40 -20
0
20 40 60 80 100 120
-40 -20
0
20 40 60 80 100 120
Ambient Temperature Ta(°C)
Ambient Temperature Ta(°C)
V
-Ta
V
-Ta
OH
OL
-30
-25
-20
-15
-10
-5
30
V
= 0.8V
I
= 5mA
F
F
R
=20Ω
R
=20Ω
L
L
25
20
15
10
5
V
=15V,V
=-15V
EE1
CC1
V
V
=15V,V
=-15V
EE1
CC1
V
=7.5V,V
=-7.5V
EE1
CC1
=7.5V,V
=-7.5V
CC1
EE1
0
0
-40 -20
0
20 40 60 80 100
-40 -20
0
20 40 60 80 100
Ambient Temperature Ta(°C)
Ambient Temperature Ta(°C)
*: The above graphs show typical characteristics.
6
2007-10-01
TLP350
I
-Ta
I
-Ta
CCH
CCL
5
4
3
2
1
0
5
4
3
2
1
0
I
=5mA
F
V
=30V
CC
V
=30V
CC
-40 -20
0
20 40 60 80 100
-40 -20
0
20 40 60 80 100
Ambient Temperature Ta(°C)
Ambient Temperature Ta(°C)
tpHL,tpLH-Ta
tpHL,tpLH-V
CC
500
500
I
=5mA,V =30V,
F CC
I
=5mA,Rg=20Ω,Cg=10nF
F
Rg=20Ω,Cg=10nF
400
300
200
100
0
400
300
200
100
0
tpLH
tpLH
tpHL
tpHL
-40 -20
0
20 40 60 80 100
15
20
25
30
Ambient Temperature Ta(°C)
Supply Voltage VCC (V)
tpHL,tpLH-I
I
-Ta
FLH
F
500
400
300
200
100
0
5
4
3
2
1
0
V
=30V,
CC
V
=15V,V >1V,
CC
=0mA
O
Rg=20Ω,Cg=10nF
I
O
tpLH
tpHL
4
6
8
10
12
14
16
-40 -20
0
20 40 60 80 100
Forward current I (mA)
Ambient Temperature Ta(°C)
F
*: The above graphs show typical characteristics.
7
2007-10-01
TLP350
I
-Ta
OPL
I
-Ta
OPH
5
4
3
2
1
0
0
-1
-2
-3
-4
-5
I
=0mA,V =15V
CC
I
=5mA,V =15V
CC
F
F
(Note:8)
(Note:8)
V
=-3.5V
8-6
V
=7.0V
6-5
I
I
OPH
MAX
OPL
MAX
V
=7.0V
8-6
V
=2.5V
6-5
-40 -20
0
20
40
60
80 100
-40 -20
0
20
40
60
80 100
Ambient Temperature Ta(°C)
Ambient Temperature Ta(°C)
I
-V
OPL OL
I
-V
OPH OH
5.0
4.0
3.0
2.0
1.0
0.0
0.0
I
=5mA,V =15V
CC
F
I
=0mA,V =15V
CC
F
(Note:8)
(Note:8)
Ta=100°C
-1.0
-2.0
-3.0
-4.0
-5.0
-6.0
Ta=25°C
Ta=-40°C
Ta=-40°C
Ta=25°C
Ta=100°C
0
-0.5
-1
-1.5
-2
-2.5
0
0.5
1
1.5
2
2.5
Low Level Output Peak Current I
(A)
OPL
High Level Output Peak Current I
(A)
OPH
V
-V (V
O
)**
UVLO
CC
14
I
= 5mA , V > 2.5V
o
F
12
10
8
**Test Circuit : V -V (V
CC
)
O
UVLO
UVLO
HYS
8
1
I
F
+V
UVLO
V
O
6
V
CC
-V
UVLO
4
4
5
2
0
5
10
15
20
Supply Voltage VCC (V)
*: The above graphs show typical characteristics.
8
2007-10-01
TLP350
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
9
2007-10-01
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