TLP360J_07 [TOSHIBA]
GaAs Ired & Photo-Triac; 砷化镓红外发光二极管和光电可控硅
| 型号： | TLP360J_07 |
| 厂家： | 
TOSHIBA |
| 描述： | GaAs Ired & Photo-Triac |
| 文件： | 总6页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP360J
TOSHIBA Photocoupler GaAs Ired & Photo-Triac
TLP360J
Unit: mm
Triac Drivers
Programmable Controllers
AC-Output Modules
Solid State Relays
The TOSHIBA TLP360J consists of a photo-triac optically coupled to a
gallium arsenide infrared-emitting diode in a four-lead plastic DIP
package.
• Peak off-state voltage: 600 V (Min.)
• Trigger LED current: 10 mA (Max.)
• On-state current: 100 mA (Max.)
• Isolation voltage: 5000 Vrms (Max.)
• UL recognized: UL1577, file No. E67349
JEDEC
• Option (D4) type
TOSHIBA
11-5B2
TÜV approved: DIN EN60747-5-2
Certificate No. R50033433
Weight: 0.26 g (Typ.)
Maximum operating insulation voltage : 890 Vpk
Maximum permissible overvoltage
: 8000 Vpk
(Note) When an EN60747-5-2 approved type is needed, please designate “Option (D4).”
Pin Configuration (top view)
• Construction mechanical rating
10.16 mm pitch
TLPXXXF type
7.62 mm pitch
standard type
4
3
1
2
Creepage distance
Clearance
Insulation thickness
7.0 mm (min)
7.0 mm (min)
0.4 mm (min)
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
1: Anode
•Trigger LED Current
2: Cathode
3: Terminal1
4: Terminal2
Trigger LED current (mA)
Classi−
fication*
Marking of
classification
V
= 6 V, Ta = 25°C
T
Min.
Max.
(IFT7)
―
7
T7
Standard
―
10
T7, blank
*Example: “(IFT7)”; “TLP360J(IFT7)”
(Note) When specifying the application type name for certification testing, be sure to use the standard product
type name, e.g., TLP360J(IFT7): TLP360J.
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TLP360J
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
50
−0.7
1
mA
F
Forward current derating (Ta ≥ 53°C)
Peak forward current (100 μs pulse, 100 pps)
Reverse voltage
∆I /°C
F
mA /°C
I
A
V
FP
V
5
R
Junction temperature
T
125
600
°C
V
j
Off-state output terminal voltage
V
DRM
Ta = 25°C
Ta = 70°C
100
50
On-state RMS current
I
mA
T(RMS)
On-state current derating (Ta ≥ 25°C)
∆I /°C
-1.1
2
mA /°C
T
Peak on-state current (100 μs pulse, 120 pps)
I
A
A
TP
Peak nonrepetitive surge current (Pw = 10 ms, DC = 10%)
I
1.2
TSM
°C
Junction temperature
T
115
−55~125
−40~100
260
j
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
T
°C
°C
°C
stg
opr
T
T
sol
Isolation voltage (AC, 1 min., R.H.≤ 60%)
(Note 1)
BV
5000
Vrms
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pins 1 and 2 are shorted together and pins 3 and 4 are shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
—
15
—
20
—
—
Supply voltage
V
240
25
1
V
ac
AC
Forward current
I
mA
A
F
—
Peak on-state current
Operating temperature
I
TP
T
opr
−25
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01
TLP360J
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
Reverse current
Capacitance
V
I
= 10 mA
F
1.0
—
—
—
—
—
—
1.15
—
1.3
10
V
μA
pF
nA
V
F
I
V = 5 V
R
R
C
V = 0, f = 1 MHz
= 600 V
30
—
T
Peak off-state current
Peak on-state voltage
Holding current
I
V
10
1000
3.0
—
DRM
DRM
= 100 mA
TM
V
I
1.7
0.6
TM
I
—
mA
H
Critical rate of rise of
off-state voltage
Critical rate of rise of
dv/dt
Vin = 240 Vrms , Ta = 85°C
(Note 2)
(Note 2)
500
0.2
V/μs
V/μs
—
—
dv/dt(c) Vin = 60 Vrms , I = 15 mA
—
T
commutating voltage
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Turn-on time
Symbol
Test Condition
Min.
—
Typ.
—
Max.
10
Unit
mA
I
V
V
= 6 V
FT
T
= 6 → 4 V , R = 100 Ω
D
L
t
—
30
100
μs
ON
I
= Rated
I Χ1.5
FT
F
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= 0 , f = 1 MHz
Min.
Typ.
0.8
Max.
Unit
—
—
—
—
—
—
Capacitance (input to output)
Isolation resistance
C
R
V
V
pF
S
S
S
S
12
14
= 500 V, R.H. ≤ 60%
Ω
1×10
10
AC, 1 minute
5000
—
—
Vrms
Vdc
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
10000
10000
—
(Note 2): dv/dt test circuit
Rin
Vin
+5 V, Vcc
+
1
4
120 Ω
Vcc
R
L
0 V
—
3
2
4 kΩ
dv/dt (c)
dv/dt
3
2007-10-01
TLP360J
I
– Ta
I
– Ta
T(RMS)
F
60
50
120
100
40
30
80
60
40
20
0
20
10
0
−20
0
20
40
60
80
100
120
-20
0
20
40
60
80
100
120
1.8
3.0
Ambient temperature Ta (A)
Ambient temperature Ta (°C)
I
– D
R
I
– V
FP
F
F
100
3000
1000
Ta = 25°C
Pulse width ≤ 100μs
50
30
Ta = 25°C
500
300
10
5
3
100
50
30
1
0.5
0.3
10
3
10−3
3
10−2
3
10−1
3
10０
Duty cycle ratio
D
R
0.1
0.6
0.8
1.0
1.2
1.4
F
1.6
Forward voltage
V
(V)
ΔV / ΔTa – I
I
– V
FP
F
F
FP
−3.2
−2.8
−2.4
−2.0
−1.6
−1.2
1000
500
300
100
50
30
10
Pulse width ≤ 100μs
Repetitive frequency
= 100 Hz
5
3
−0.8
−0.4
Ta = 25°C
1
0.6
0.1
0.3 0.5
1
3
5
10
30 50
1.0
1.4
1.8
2.2
V
2.6
Forward current
I
(mA)
Pulse forward voltage
(V)
F
PF
*: The above graphs show typical characteristics.
4
2007-10-01
TLP360J
Normalized I – Ta
FT
Normalized I – Ta
H
3
2
3
2
V
= 6 V
T
1.2
1
1.2
1
0.5
0.3
0.5
0.3
0.1
−40
0.1
-40
-20
0
20
40
60
80
100
-20
0
20
40
60
80
100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Normalized I
– Ta
Normalized V
– Ta
DRM
DRM
103
1.4
1.2
1.0
0.8
V
= Rated
DRM
102
101
0.6
0.4
0.2
10０
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Normalized I / I – P
F
FT
w
10
5
3
2
1.8
1.6
1.4
1.2
1
10
30
50
100
300 500
1000
*: The above graphs show typical characteristics.
5
2007-10-01
TLP360J
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-10-01
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