TLP421(GB) [TOSHIBA]
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| 型号： | TLP421(GB) |
| 厂家： | 
TOSHIBA |
| 描述： | 暂无描述 晶体 光电 二极管 晶体管 |
| 文件： | 总9页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP421
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP421
Unit in mm
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage Circuits
The TOSHIBA TLP421 consists of a silicone photo−transistor optically
coupled to a gallium arsenide infrared emitting diode in a four lead
plastic DIP (DIP4) with having high isolation voltage
(AC: 5kV
RMS
(min)).
·
·
Collector-emitter voltage: 80V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
TOSHIBA
11−5B2
Weight: 0.26 g
·
·
·
Isolation voltage: 5000V
(min.)
rms
Pin Configurations
(top view)
UL recognized: UL1577
BSI approved: BS EN60065: 1994
Approved no.8411
BS EN60950: 1992
Approved no.8412
SEMKO approved: EN60065, EN60950, EN60335
Approved no.9910249/01
1
2
4
3
·
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
1
2002-09-25
TLP421
·
Option(D4)type
TÜV approved: DIN VDE0884
Approved no.R9950202
Maximum operating insulation voltage: 890V
PK
Maximu permissible overvoltage: 8000V
PK
(Note): When a VDE0884 approved type is needed,
please designate the “Option(D4)”
Making the VDE applocation: DIN VDE0884
Construction mechanical rating
·
7.62mm Pich
Typical Type
10.16mm Pich
TLPxxxF Type
Creepage distance
Clearance
7.0mm(min)
7.0mm(min)
0.4mm(min)
8.0mm(min)
8.0mm(min)
0.4mm(min)
Insulation thickness
Current Transfer Ratio
Current Transfer Ratio (%)
Classi-
(I / I )
C
F
fication
(*1)
Type
Marking Of Classification
I
= 5mA, V = 5V, Ta = 25°C
F
CE
Min
50
Max
600
(None)
Rank Y
Blank, Y, Y+, G, G+, B, B+, GB
50
150
300
600
600
Y, Y+
TLP421
Rank GR
Rank BL
Rank GB
100
200
100
G, G+
B, B+
G, G+, B, B+, GB
(*1): Ex. rank GB: TLP421 (GB)
(Note): Application type name for certification test, please use standard product type name, i. e.
TLP421 (GB): TLP421
2
2002-09-25
TLP421
Maximum Ratings (Ta = 25°C)
Characteristic
Stmbol
Rating
Unit
mA
Forward current
I
60
-0.7
1
F
Forward current derating(Ta ≥ 39°C)
Pulse forward current
Power dissipation
∆I / °C
F
mA / °C
(Note 2)
I
A
mW
mW / °C
V
FP
P
100
-1.0
5
D
Power dissipation derating
Reverse voltage
∆P / °C
D
V
R
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
Collector current
T
125
80
°C
j
V
V
CEO
ECO
V
7
V
I
50
mA
mW
C
Power dissipation(single circuit)
P
150
C
Power dissipation derating
∆P / °C
-1.5
mW / °C
C
(Ta ≥ 25°C)(single circuit)
Junction temperature
T
125
-55~100
-55~125
260
°C
°C
j
Operating temperature range
Storage temperature range
Lead soldering temperature (10s)
Total package power dissipation
T
opr
T
°C
stg
sol
T
°C
P
250
mW
T
Total package power dissipation derating
∆P / °C
-2.5
mW / °C
T
(Ta ≥ 25°C)
Isolation voltage
(Note 3)
BV
S
5000
V
rms
(Note 2): 100µs pulse, 100Hz frequency
(Note 3): AC, 1 min., R.H.≤ 60%. Apply voltage to LED pin and detector pin together.
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ.
Max
Unit
Supply voltage
Forward current
Collector current
V
―
―
5
16
1
24
25
10
85
V
CC
I
mA
mA
°C
F
I
―
C
Operating temperature
T
-25
―
opr
3
2002-09-25
TLP421
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
I = 10 mA
Min
Typ.
Max
Unit
V
1.0
―
1.2
―
1.3
10
―
V
F
F
Reverse current
Capacitance
I
V
= 5 V
R
µA
pF
R
C
T
V = 0, f = 1 MHz
―
30
Collector-emitter
V
V
I
I
= 0.5 mA
= 0.1 mA
80
7
―
―
―
―
V
V
(BR) CEO
(BR) ECO
C
E
breakdown voltage
Emitter-collector
breakdown voltage
V
= 24 V (ambient light
0.01
(0.1)
0.1
CE
CE
―
µA
below 1000 ℓx)
(10)
Collector dark current
I (I
D
)
CEO
V
= 24 V (ambient light
0.6
(1)
50
―
―
µA
pF
Ta = 85°C below 1000 ℓx)
(50)
Capacitance
C
CE
V = 0, f = 1 MHz
10
―
(collector to emitter)
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
/ I
Test Condition
= 5 mA, V = 5 V
MIn
Typ.
Max
Unit
%
50
100
―
―
―
60
―
―
0.2
―
600
600
―
I
F
CE
I
C
F
Rank GB
Rank GB
IF = 1 mA, V = 0.4 V
CE
Saturated CTR
I
/ I
%
V
C
V
F (sat)
30
―
―
I
I
= 2.4 mA, I = 8 mA
F
0.4
―
C
C
Collector-emitter saturation
―
CE (sat)
= 0.2 mA, I = 1 mA
F
voltage
Rank GB
―
0.4
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
0.8
Max
Unit
Capacitance
C
R
V
V
= 0, f = 1 MHz
= 500 V
―
―
pF
S
S
S
(input to output)
Isolation resistance
1×1012
5000
―
1014
―
―
―
―
―
Ω
S
AC, 1 minute
V
rms
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
10000
10000
―
Vdc
4
2002-09-25
TLP421
Switching Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
µs
Rise time
t
―
―
―
―
―
―
―
2
3
―
―
―
―
―
―
―
r
Fall time
t
f
V
= 10 V, I = 2 mA
C
CC
R = 100Ω
L
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
t
t
3
on
off
3
t
2
ON
R = 1.9 kΩ
(Fig.1)
L
CC
µs
t
25
50
s
V
= 5 V, I = 16 mA
F
t
OFF
I
F
I
F
V
V
CC
t
RL
V
CC
4.5V
CE
V
CE
0.5V
t
ON
t
OFF
Fig.1 Switching time test circuit
5
2002-09-25
TLP421
I – Ta
F
P – Ta
C
100
80
200
160
120
80
60
40
20
0
40
0
-20
0
20
40
100
120
60
80
-20
0
20
40
100
120
1.6
2.4
60
80
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
I
– D
R
FP
I – V
F
F
100
10
3000
1000
100
10
1
0.1
0.4
0.01
Duty cycle ratio
1
0.1
0.8
1.0
1.4
0.001
0.6
1.2
F
Forward voltage
V
(V)
D
R
I
– V
FP
∆VF / ∆Ta
IF
FP
1000
100
-3.0
-2.6
-2.2
-1.8
-1.4
Pulse width ≤ 10µs
Repetitive
frequency=100Hz
Ta = 25℃
10
1
-1.0
-0.6
0
0.4
0.8
1.2
1.6
2.0
0.1
1
10
100
Pulse forward voltage
V
(V)
FP
Forward current
I
6
2002-09-25
TLP421
I
– Ta
D
I
– VCE
C
10
80
60
1
30 20 15
V =24 V
CE
50
0.1
10
40
20
0
10
5
001
IF=5mA
0.001
0.0001
0
2
Collector-emitter voltage
8
10
80
4
6
0
20
40
60
100
V
(V)
CE
Ambient temperature Ta (℃)
I
– VCE
I
– I
F
C
C
30
20
100
10
1
30
50
20
10
5
40
Sample
A
10
0
Sample
B
IF= 2 mA
0
0.2
0.4
0.6
0.8
1.0
(V)
1.2
Collector-emitter voltage
V
CE
0.1
I
/I – I
F F
C
1000
100
Ta = 25°C
VCE = 5V
VCE = 0.4V
Sample
A
0.01
0.1
1
10
100
Forward current
I
F
(mA)
Sample
B
Ta = 25°C
VCE = 5V
VCE = 0.4V
10
3
0.1
1
10
100
Forward current
I
F
(mA)
7
2002-09-25
TLP421
I
– Ta
V
– Ta
C
CE(sat)
100
10
0.20
0.16
0.12
0.08
I
I
= 5 mA
= 1 mA
F
C
25
10
5
1
0.04
0
IF = 0.5 mA
V
= 5V
0
CE
0.1
20
-20
40
60
80
100
40
60
100
-20
80
20
0
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
Switching Time – RL
1000
Ta = 25°C
= 16mA
I
F
V
= 5V
CC
t
OFF
100
t
S
10
t
ON
1
1
10
100
Load resistance
R
(kΩ)
L
8
2002-09-25
TLP421
RESTRICTIONS ON PRODUCT USE
000707EBC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
9
2002-09-25
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