TLP504A-2(GB) [TOSHIBA]
Optocoupler - Transistor Output, 4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, 11-20A3, DIP-16;
| 型号： | TLP504A-2(GB) |
| 厂家： | 
TOSHIBA |
| 描述： | Optocoupler - Transistor Output, 4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, 11-20A3, DIP-16 晶体 光电 二极管 晶体管 光电晶体管 输出元件 |
| 文件： | 总8页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP504A,TLP504A−2
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP504A,TLP504A−2
Programmable Controllers
Unit in mm
AC / DC−Input Module
Solid State Relay
The TOSHIBA TLP504A and TLP504A−2 consists of a
photo−transistor optically coupled to a gallium arsenide
infrared emitting diode.
The TLP504A offers two isolated channels in an eight
lead plastic DIP package, while the TLP504A−2 provides
four isolated channels in a sixteen plastic DIP package.
•
•
Collector−emitter voltage: 55 V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
•
•
Isolation voltage: 2500 Vrms (min.)
UL recognized: UL1577,
TOSHIBA
11−10C4
File no. E67349
Weight: 0.54 g
Pin Configurations (top view)
TLP504A
TLP504A-2
1
2
3
4
8
7
6
5
1
2
3
16
15
14
13
12
11
10
4
5
1, 4 : Anode
2, 3 : Cathode
5, 8 : Emitter
6, 7 : Collector
6
7
8
TOSHIBA
11−20A3
Weight: 1.1 g
9
1, 4, 5, 8
2, 3, 6, 7
: Anode
: Cathode
9, 12, 13, 16 : Emitter
10, 11, 14, 15: Collector
1
2007-10-01
TLP504A,TLP504A−2
Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristic
Forward current
Symbol
Unit
TLP504A
60
TLP504A−2
I
50
mA
F
Forward current derating
Pulse forward current
Reverse voltage
ΔI / °C
−0.7 (Ta ≥ 39°C)
−0.5 (Ta ≥ 25°C)
mA /°C
F
I
1 (100μs pulse, 100pps)
A
V
FP
V
5
125
55
7
R
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Collector current
T
j
°C
V
V
V
CEO
ECO
V
I
50
mA
C
Collector power dissipation
(1 circuit)
P
150
100
mW
C
Collector power dissipation
derating (1 circuit Ta ≥ 25°C)
ΔP / °C
−1.5
−1.0
mW /°C
C
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
T
125
°C
°C
j
T
−55~150
−55~100
260 (10 s)
stg
opr
T
°C
T
°C
sol
R
250
150
mW
T
Total package power dissipation
derating (Ta ≥ 25°C)
ΔP / °C
−2.5
−1.5
mW / °C
Vrms
T
Isolation voltage
BV
2500 (AC, 1min., R.H.≤ 60%) (Note 1)
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristics
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Forward current
Collector current
V
―
―
5
16
1
24
20
10
85
V
CC
I
mA
mA
°C
F
I
―
C
Operating temperature
T
opr
−25
―
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01
TLP504A,TLP504A−2
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
= 10 mA
F
Min.
Typ.
Max.
Unit
V
I
1.0
—
1.15
—
1.3
10
—
V
F
Reverse current
Capacitance
I
V
= 5 V
R
μA
pF
R
C
V = 0, f = 1 MHz
—
30
T
Collector−emitter
V
V
I
I
= 0.5 mA
= 0.1 mA
55
7
—
—
—
—
V
V
(BR) CEO
(BR) ECO
C
E
breakdown voltage
Emitter−collector
breakdown voltage
V
V
= 24 V
—
—
10
2
100
50
nA
CE
CE
Collector dark current
I
CEO
= 24 V, Ta = 85°C
μA
Capacitance
collector to emitter
C
CE
V = 0, f = 1 MHz
—
10
—
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
%
50
100
—
—
—
60
—
—
0.2
—
600
600
—
I
= 5 mA, V = 5 V
CE
F
Current transfer ratio
I / I
C F
Rank GB
IF = 1 mA, V = 0.4 V
CE
Saturated CTR
I
/ I
F (sat)
%
V
C
V
Rank GB
30
—
—
I
I
= 2.4 mA, I = 8 mA
F
0.4
—
C
C
Collector−emitter
saturation voltage
—
CE (sat)
= 0.2 mA, I = 1 mA
F
Rank GB
—
0.4
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Capacitance input to output
Isolation resistance
C
R
V
V
= 0, f = 1 MHz
= 500 V
—
5×1010
2500
—
0.8
1014
—
—
—
—
—
—
pF
S
S
S
S
Ω
AC, 1 minute
Vrms
Vdc
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
5000
5000
—
3
2007-10-01
TLP504A,TLP504A−2
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Rise time
t
—
—
—
—
—
—
—
2
3
—
—
—
—
—
—
—
r
Fall time
t
f
V
= 10 V, I = 2 mA
C
CC
R = 100Ω
μs
L
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
t
t
3
on
off
3
t
2
ON
R = 1.9 kΩ
V
(Fig.1)
L
CC
μs
t
15
25
s
= 5 V, I = 16 mA
F
t
OFF
Fig. 1 Switching time test circuit
IF
IF
VCC
VCE
tS
RL
VCC
4.5V
VCE
0.5V
tOFF
tON
4
2007-10-01
TLP504A,TLP504A−2
I – Ta
F
P
C
– Ta
120
240
200
160
100
80
TLP504A
TLP504A
60
120
80
40
0
TLP504A-2
TLP504A-2
40
20
0
-20
-20
0
20
40
100
120
0
20
40
100
120
60
80
60
80
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
I – V
I
– D
R
F
F
FP
5000
3000
100
Ta = 25℃
Pulse width ≤ 100μs
Ta = 25℃
50
30
1000
10
500
300
5
3
100
1
50
30
0.5
0.3
10
10-2
3
10-1
3
100
3
10-3
3
0.1
0.8
1.0
1.4
0.4
0.6
1.2
1.6
Duty cycle ratio
D
R
Forward voltage
V
F
(V)
I
– V
FP
FP
1000
ΔV /ΔTa
– I
F
F
Pulse width ≤ 10μs
500
300
Repetitive frequency=100Hz
-2.8
-2.4
-2.0
-1.6
-1.2
Ta = 25℃
100
50
30
10
5
3
-0.8
-0.4
1
0
0.1
0.3
1
3
30
10
0.4
0.8
1.0
1.2
1.4
1.6
Pulse forward voltage
V
(V)
Forward current
I
F
(mA)
FP
5
2007-10-01
TLP504A,TLP504A−2
I
– VCE
I
– Ta
C
CEO
80
60
Ta = 25℃
1
10
V
= 24V
CE
50mA
30mA
20mA
10V
0
10
5V
40
20
0
15mA
10mA
P
C(MAX.)
-1
10
I =5mA
F
0
2
8
10
4
6
-2
10
10
Collector-emitter voltage
V
(V)
CE
I
– VCE
C
-3
-4
Ta = 25℃
50mA
40mA
25
20
30mA
20mA
10
80
100
120
0
40
20
60
15
10
10mA
5mA
Ambient temperature Ta (℃)
I
– I
C
F
100
Ta = 25°C
VCE = 5V
VCE = 0.4V
5
0
I =2mA
50
30
F
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Collector-emitter voltage
V
(V)
CE
10
5
3
I
/ I – I
F F
C
500
300
SAMPLE
A
SAMPLE
B
SAMPLE
A
1
100
0.5
0.3
50
30
SAMPLE
B
Ta = 25°C
VCE = 5V
VCE = 0.4V
0.1
10
5
0.05
0.03
0.3
3
1
10
I
30
100
0.3
1
3
10
30
100
Forward current
(mA)
Forward current
I
(mA)
F
F
6
2007-10-01
TLP504A,TLP504A−2
I
– Ta
V
– Ta
C
CE (sat)
100
0.20
0.16
0.12
0.08
I
I
= 5mA
= 1mA
F
V
= 5V
CE
25mA
C
50
30
10mA
5mA
10
5
3
0.04
0
20
-20
0
40
60
80
100
1mA
1
Ambient temperature Ta (℃)
0.5
0.3
I
= 0.5mA
F
R – Switching Time
L
1000
Ta = 25°C
0.1
20
-20
0
40
60
80
100
I
= 16mA
= 5V
F
500
300
V
Ambient temperature Ta (℃)
CC
t
OFF
100
50
30
t
s
10
5
3
t
ON
1
1
3
10
30
100
300
Load resistance
R
L
(kΩ)
7
2007-10-01
TLP504A,TLP504A−2
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
8
2007-10-01
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