TLP513 [TOSHIBA]
Optocoupler - IC Output, 1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 11-7A8, DIP-6;
| 型号： | TLP513 |
| 厂家： | 
TOSHIBA |
| 描述： | Optocoupler - IC Output, 1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 11-7A8, DIP-6 输出元件 光电 |
| 文件： | 总9页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP521−1,TLP521−2,TLP521−4
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP521−1,TLP521−2,TLP521−4
Programmable Controllers
Unit in mm
AC/DC−Input Module
Solid State Relay
The TOSHIBA TLP521−1, −2 and −4 consist of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode.
The TLP521−2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP521−4 provides four isolated channels in a
sixteen plastic DIP package.
·
·
Collector−emitter voltage: 55 V (min)
Current transfer ratio: 50% (min)
Rank GB: 100% (min)
TOSHIBA
11−5B2
Weight: 0.26 g
·
·
Isolation voltage: 2500 Vrms (min)
UL recognized
made in Japan: UL1577, file No. E67349
made in Thailand: UL1577, file No. E152349
Pin Configurations (top view)
TLP521-1
TLP521-2
TLP521-4
1
2
3
4
8
7
6
5
1
2
4
3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
TOSHIBA
11−10C4
Weight: 0.54 g
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
1, 3 : Anode
2, 4 : Cathode
5, 7 : Emitter
6, 8 : Collector
9
1, 3, 5, 7
2, 4, 6, 8
: Anode
: Cathode
TOSHIBA
11−20A3
Weight: 1.1 g
9, 11, 13, 15 : Emitter
10, 12, 14, 16: Collector
1
2002-09-25
TLP521−1,TLP521−2,TLP521−4
Maximum Ratings (Ta = 25°C)
Rating
Characteristic
Symbol
Unit
TLP521-2
TLP521-4
TLP521-1
Forward current
I
70
50
mA
F
Forward current derating
Pulse forward current
Reverse voltage
∆I /°C
-0.93 (Ta ≥ 50°C)
-0.5 (Ta ≥ 25°C)
mA /°C
F
I
1 (100µ pulse, 100pps)
A
V
FP
V
5
125
55
7
R
Junction temperature
Collector-emitter voltage
Emitter-collector valtage
Collector current
T
°C
V
j
V
CEO
ECO
V
V
I
50
mA
C
Collector power dissipation
(1 circuit)
P
150
100
mW
C
Collector power dissipation
∆P /°C
-1.5
-1.0
mW /°C
C
derating (1 circuit Ta ≥ 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
T
125
°C
°C
j
T
-55~125
-55~100
260 (10 s)
stg
opr
T
°C
T
°C
sol
P
250
150
mW
T
Total package power dissipation
∆P /°C
-2.5
-1.5
mW /°C
Vrms
T
derating (Ta ≥ 25°C)
Isolation voltage
BV
2500 (AC, 1min., R.H.≤ 60%) (Note 1)
S
(Note 1): Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ.
Max
Unit
Supply voltage
Forward current
Collector current
V
―
―
5
16
1
24
25
10
85
V
CC
I
mA
mA
°C
F
I
―
C
Operating temperature
T
-25
―
opr
2
2002-09-25
TLP521−1,TLP521−2,TLP521−4
Current Transfer Ratio (%)
(I / I )
C
F
Classi-
fication (*1)
Marking Of
Classification
Type
I
= 5mA, V = 5V, Ta = 25°C
F
CE
Min
50
Max
600
150
300
600
600
600
600
■
■
■
A
Blank, Y, Y , G, G , B, B , GB
■
Rank Y
Rank GR
Rank BL
Rank GB
A
50
Y, Y
■
TLP521
100
200
100
50
G, G
■
B, B
■
■
G, G , B, B , GB
Blank, GR, BL, GB
GR, BL, GB
TLP521-2
TLP521-4
Rank GB
100
*1: Ex. rank GB: TLP521-1 (GB)
(Note): Application type name for certification test, please use standard product type name, i.e.
TLP521-1 (GB): TLP521-1, TLP521-2 (GB): TLP521-2
3
2002-09-25
TLP521−1,TLP521−2,TLP521−4
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
I = 10 mA
Min
Typ.
Max
Unit
V
1.0
—
1.15
—
1.3
10
—
V
F
F
Reverse current
Capacitance
I
V
= 5 V
R
µA
pF
R
C
T
V = 0, f = 1 MHz
—
30
Collector-emitter
V
V
I
I
= 0.5 mA
= 0.1 mA
55
7
—
—
—
—
V
V
(BR) CEO
(BR) ECO
C
E
breakdown voltage
Emitter-collector
breakdown voltage
V
V
= 24 V
—
—
10
2
100
50
nA
µA
CE
CE
Collector dark current
I
CEO
= 24 V, Ta = 85°C
Capacitance
C
CE
V = 0, f = 1 MHz
—
10
—
pF
(collector to emitter)
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
/ I
Test Condition
MIn
Typ.
Max
Unit
%
50
100
—
—
—
600
600
—
I
= 5 mA, V = 5 V
F
CE
I
C
F
Rank GB
60
—
IF = 1 mA, V = 0.4 V
CE
Saturated CTR
I
/ I
%
V
C
V
F (sat)
Rank GB
30
—
—
I
I
= 2.4 mA, I = 8 mA
F
—
0.4
—
C
C
Collector-emitter
—
0.2
—
CE (sat)
= 0.2 mA, I = 1 mA
F
saturation voltage
Rank GB
—
0.4
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
—
Typ.
0.8
Max
—
Unit
Capacitance
C
R
V
V
= 0, f = 1 MHz
pF
S
S
S
(input to output)
Isolation resistance
= 500 V, R.H.≤ 60%
—
2500
—
1011
—
—
—
—
—
Ω
S
AC, 1 minute
Vrms
Vdc
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
5000
5000
—
4
2002-09-25
TLP521−1,TLP521−2,TLP521−4
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
µs
Rise time
t
—
—
—
—
—
—
—
2
3
—
—
—
—
—
—
—
r
V
= 10 V
CC
Fall time
t
f
I
= 2 mA
C
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
t
t
3
R = 100Ω
on
off
L
3
t
2
ON
R = 1.9 kΩ (Fig.1)
L
CC
µs
t
15
25
s
V
= 5 V, I = 16 mA
F
t
OFF
Fig.1 : SWITCHING TIME TEST CIRCUIT
IF
IF
VCC
VCE
tS
RL
VCC
4.5V
0.5V
VCE
tOFF
tON
5
2002-09-25
TLP521−1,TLP521−2,TLP521−4
TLP521-2
TLP521-1
I – Ta
F
I – Ta
F
100 TLP521-4
100
80
80
60
40
60
40
20
0
20
0
-20
0
20
40
100
-20
0
20
Ambient temperature Ta (°C)
100
60
80
40
60
80
Ambient temperature Ta (°C)
TLP521-2
TLP521-1
P
C
– Ta
P
C
– Ta
120 TLP521-4
240
200
160
120
80
100
80
60
40
20
0
40
0
100
-20
0
20
40
60
80
-20
0
20
40
100
60
80
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
TLP521-2
TLP521-4
TLP521-1
I
– D
I
– D
FP R
FP
R
3000
1000
1000
Pulse width ≤ 100µs
Pulse width ≤ 100µs
Ta = 25°C
Ta = 25°C
500
300
500
300
100
100
50
30
50
30
10
10
10-2
3
10-1
3
100
3
10-3
3
10-2
3
10-1
3
100
3
10-3
3
Duty cycle ratio
D
R
Duty cycle ratio D
R
6
2002-09-25
TLP521−1,TLP521−2,TLP521−4
∆V /∆Ta
– I
F
F
I – V
F
F
100
Ta=25°C
-2.8
-2.4
-2.0
-1.6
-1.2
50
30
10
5
3
1
0.5
0.3
-0.8
-0.4
0.1
0.4
0.8
1.0
1.4
0.1
0.3
1
3
30
0.6
1.2
(V)
1.6
10
Forward voltage
V
F
Forward current
I
(mA)
F
I
– V
FP
FP
I
– Ta
CEO
1000
1
0
Pulse width ≤10µs
10
10
500
300
10V
5V
Repetitive frequency =100Hz
Ta = 25°C
V
CE
=24V
100
-1
-2
10
10
50
30
10
5
3
-3
-4
10
10
1
0
0.4
0.8
1.2
1.6
V
2.0
(V)
2.4
160
0
40
80
120
Pulse forward voltage
Ambient temperature Ta ℃
FP
I
– VCE
I
– VCE
C
C
80
60
Ta=25°C
Ta=25°C
50mA
40mA
25
30mA
20mA
20
15
10
50mA
30mA
20mA
10mA
5mA
40
20
0
15mA
10mA
PC(MAX.)
5
0
I =5mA
F
I =2mA
F
0
0
2
8
10
0.2
0.4
0.6
0.8
1.0
1.2
(V)
1.4
4
6
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
CE
CE
7
2002-09-25
TLP521−1,TLP521−2,TLP521−4
I
– I
I /I – I
C F F
C
F
500
300
100
Ta = 25°C
VCE=5V
VCE=0.4V
50
30
100
Sample
B
50
30
10
Sample
A
5
3
Ta = 25°C
10
VCE=5V
VCE=0.4V
Sample
B
10
5
1
0.3
1
3
30
100
Forward current
I
F
(mA)
0.5
0.3
V
– Ta
CE(sat)
0.20
0.16
0.12
0.08
I
I
= 5mA
= 1mA
F
C
0.1
0.05
0.03
0.3
1
3
10
30
100
Forward current
I
F
(mA)
0.04
0
20
-20
0
40
60
80
100
Ambient temperature Ta (℃)
I
– Ta
C
100
R – Switching Time
L
V
= 5V
CE
25mA
1000
50
30
Ta = 25°C
= 16mA
I
V
500
300
F
CC
10mA
5mA
= 5V
tOFF
10
100
5
3
50
30
tS
1mA
1
10
0.5
0.3
I
= 0.5mA
5
3
F
tON
1
0.1
1
3
10
Load resistance
30
100
20
300
-20
0
40
60
80
100
R
(kΩ)
Ambient temperature Ta (℃)
L
8
2002-09-25
TLP521−1,TLP521−2,TLP521−4
RESTRICTIONS ON PRODUCT USE
000707EBC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
9
2002-09-25
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