TLP525G-2 [TOSHIBA]
GaAs IRed & Photo−Triac; 砷化镓红外发光二极管和光电可控硅
| 型号： | TLP525G-2 |
| 厂家： | 
TOSHIBA |
| 描述： | GaAs IRed & Photo−Triac |
| 文件： | 总6页 (文件大小：566K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP525G,TLP525G−2,TLP525G−4
TOSHIBA Photocoupler GaAs IRed & Photo−Triac
TLP525G,TLP525G−2,TLP525G−4
Triac Drive
Unit in mm
Programmable Controllers
AC−Output Module
Solid State Relay
The TOSHIBA TLP525G, −2 and −4 consist of a photo−triac optically
coupled to a gallium arsenide infrared emitting diode.
The TLP525G−2 offers two isolated channels in an eight lead plastic
DIP package, while the TLP525G−4 provides four isolated channels in a
sixteen lead plastic DIP package.
•
•
•
•
•
Peak off−stage voltage: 400V (min.)
Trigger LED current: 10mA (max.)
Peak on−stage current: 2Apk (max.)
TOSHIBA
11−5B2
Weight: 0.26g
Isolation voltage: 2500V
(min.)
rms
UL recognized: File no.E67349
Pin Configurations (top view)
TOSHIBA
11−10C4
Weight: 0.54g
TOSHIBA
11−20A3
Weight: 1.1g
1
2007-10-01
TLP525G,TLP525G−2,TLP525G−4
Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristic
Symbol
Unit
TLP525G−2
TLP525G−4
TLP525G
Forward current
I
50
50
mA
F
Forward current derating
Pulse forward current
Reverse voltage
I
/ °C
FP
−0.7 (Ta ≥ 53°C)
−0.5 (Ta ≥ 25°C)
mA / °C
F
I
1 (100μs pulse, 100pps)
A
V
V
5
R
Junction temperature
T
j
125
°C
Off−state output terminal
voltage
V
400
V
DRM
Ta = 25°C
Ta = 70°C
100
50
80
40
On−state RMS
current
I
mA
T (RMS)
On−state current derating
(Ta≥25°C)
I
/ °C
−1.1
−0.9
mA / °C
T
Peak on state current
I
2 (100μs pulse, 120pps)
A
A
TP
Peak nonrepetitive surge
I
1.2
TSM
current (P = 10ms, DC = 10%)
W
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Isolation voltage
T
115
−55~125
°C
°C
°C
°C
j
T
stg
opr
T
−40~100
T
260 (10s)
sol
(Note)
BV
2500 (AC, 1min., R.H. ≤ 60%)
V
rms
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note:
Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristic
Supply voltage
Symbol
Min.
Typ.
Max.
Unit
V
―
15
―
20
―
―
120
25
1
Vac
mA
A
AC
Forward current
I
F
Peak on−state current
Operating temperature
I
―
TP
T
opr
−25
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01
TLP525G,TLP525G−2,TLP525G−4
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
= 10mA
F
Min.
Typ.
Max.
Unit
V
I
1.0
―
―
―
―
―
1.15
―
1.3
10
V
μA
pF
nA
V
F
Reverse current
Capacitance
I
V = 5V
R
R
C
V = 0, f = 1MHz
30
―
T
I
V
I
= 400V
10
100
3.0
―
Peak off−state current
Peak on−state voltage
Holding current
DRM
DRM
V
= 100mA
1.7
0.2
TM
TM
I
⎯
mA
H
Critical rate of rise
of off−state voltage
V
V
= 120V , Ta = 85°C
rms
―
in
in
dv / dt
200
500
0.2
V / μs
V / μs
(Figure 1)
Critical rate of rise
of commutating voltage
= 30V , I = 15mA
rms
T
dv / dt (c)
―
―
(Figure 1)
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Symbol
Test Condition
= 3V
Min.
Typ.
Max.
Unit
I
V
V
V
―
―
5
10
―
―
―
―
―
mA
pF
Ω
FT
T
S
S
Capacitance input to output
Isolation resistance
C
R
= 0, f = 1MHz
= 500V, R.H. ≤ 60%
0.8
S
S
5×1010
2500
―
1014
AC, 1 minute
―
Vrms
Vdc
BV
AC, 1 second, in oil
DC, 1 minute, in oil
5000
5000
Isolation voltage
S
―
Fig.1 dv / dt Test Circuit
3
2007-10-01
TLP525G,TLP525G−2,TLP525G−4
4
2007-10-01
TLP525G,TLP525G−2,TLP525G−4
5
2007-10-01
TLP525G,TLP525G−2,TLP525G−4
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-10-01
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