TLP627-2(T) [TOSHIBA]

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TLP627-2(T)
型号: TLP627-2(T)
厂家: TOSHIBA    TOSHIBA
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晶体 光电 二极管 晶体管 光电晶体管 输出元件
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中文:  中文翻译
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TLP627,TLP627-2,TLP627-4  
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR  
TLP627,TLP627-2,TLP627-4  
Unit in mm  
PROGRAMMABLE CONTROLLERS  
DC-OUTPUT MODULE  
TELECOMMUNICATION  
The TOSHIBA TLP627,-2 and -4 consists of a gallium arsenide infrared  
emitting diode optically coupled to a darlington connected phototransistor  
which has an integral base-emitter resistor to optimize switching speed and  
elevated temperature characteristics.  
The TLP627-2 offers two isolated channels in a eight lead plastic DIP,  
while the TLP627-4 provide four isolated channels per package.  
TOSHIBA  
115B2  
Weight: 0.26 g  
z
z
z
z
Collector-Emitter Voltage  
Current Transfer Ratio  
Isolation Voltage  
: 300V(Min)  
: 1000%(Min)  
: 5000Vrms(Min)  
: UL1577,File No.E67349  
UL Recognized  
MADE IN JAPAN  
MADE IN THAILAND  
UL Recognized  
E67349  
*1  
*2  
E152349  
*1  
*2  
BSI Approved  
7426, 7427  
7426, 7427  
*1 UL1577  
*2 BS EN60065: 2002, BS EN60950-1: 2002  
TOSHIBA  
1110C4  
PIN CONFIGURATION (TOP VIEW)  
Weight: 0.54 g  
TLP627-2  
TLP627-4  
TLP627  
8
1
1
2
4
3
1
16  
2
3
7
6
2
3
15  
14  
1: ANODE  
2: CATHODE  
3: EMITTER  
4:COLLECTOR  
4
5
4
5
13  
12  
1,3: ANODE  
2,4: CATHODE  
5,7: EMITTER  
6,8:COLLECTOR  
6
7
11  
10  
9
8
TOSHIBA  
1120A3  
1,3,5,7  
2,4,6,8  
: ANODE  
: CATHODE  
Weight: 1.1 g  
9,11,13,15 : EMITTER  
10,12,14,16 :COLLECTOR  
1
2007-10-01  
TLP627,TLP627-2,TLP627-4  
Absolute Maximum Ratings (Ta=25°C)  
RATING  
CHARACTERISTIC  
SYMBOL  
UNIT  
mA  
TLP627-2  
TLP627-4  
TLP627  
60  
Forward Current  
IF  
IF /°C  
IFP  
50  
Forward Current Derating  
Pulse Forward Current  
Power Dissipation  
0.7(Ta39°C) 0.5(Ta25°C) mA /°C  
1(100μs pulse,100pps)  
A
mW  
mW /°C  
V
(1 Circuit)  
PD  
100  
-1.0  
70  
Power Dissipation Derating (Ta25°C,1 Circuit)  
Reverse Voltage  
PD /°C  
VR  
-0.7  
5
Junction Temperature  
Tj  
125  
300  
°C  
Collector-Emitter Voltage  
VCEO  
V
Emitter -Collector Voltage  
Collector Current  
VECO  
IC  
0.3  
V
150  
mA  
Collector Power Dissipation  
(1 Circuit)  
PC  
150(*300)  
-1.5(*-3.5)  
100  
-1.0  
mW  
mW /°C  
°C  
Collector Power Dissipation Derating  
Junction Temperature  
(Ta25°C,1 Circuit) Pc /°C  
Tj  
125  
Operating Temperature Range  
Storage Temperature Range  
Topr  
Tstg  
Tsold  
PT  
55~100  
55~125  
°C  
°C  
Lead Soldering Temperature (10s)  
Total Package Power Dissipation  
Total Package Power Dissipation Derating  
260(10sec)  
°C  
250(*320)  
-2.5(*-3.2)  
150  
-1.5  
mW  
(Ta25°C,1 Circuit)  
PT/°C  
mW /°C  
Vrms  
Isolation Voltage  
(AC,1min. , R.H.60%)  
(Note1)  
BVS  
5000  
*IF=20mA Max  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
(Note1)Device considered a two terminal device : LED side pins Shorted together and DETECTOR side pins shorted  
together.  
Recommended Operating Conditions  
CHARACTERISTIC  
Supply Voltage  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
VCC  
IF  
16  
200  
25  
V
Forward Current  
mA  
mA  
°C  
Collector Current  
IC  
120  
85  
Operating Temperature  
Topr  
25  
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the  
device. Additionally, each item is an independent guideline respectively. In developing designs using this  
product, please confirm specified characteristics shown in this document.  
2
2007-10-01  
TLP627,TLP627-2,TLP627-4  
Individual Electrical Characteristics (Ta=25°C)  
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
Forward Voltage  
Reverse Current  
Capacitance  
VF  
IR  
IF = 10 mA  
VR = 5 V  
1.0  
1.15  
1.3  
10  
V
μA  
pF  
CT  
V = 0 , f=1MHz  
30  
Collector-Emitter  
V(BR)CEO IC = 0.1mA  
V(BR)ECO IE = 0.1mA  
300  
0.3  
V
V
Breakdown Voltage  
Emitter-Collector  
Breakdown Voltage  
VCE = 200V  
ICEO  
10  
200  
20  
nA  
Collector Dark Current  
V
CE = 200V , Ta = 85°C  
μA  
Capacitance Collector  
to Emitter  
CCE  
V=0 , f=1MHz  
10  
pF  
Coupled Electrical Characteristics (Ta=25°C)  
CHARACTERISTIC  
Current Transfer Ratio  
SYMBOL  
TEST CONDITION  
IF=1mA , VCE=1V  
MIN.  
TYP.  
MAX.  
UNIT  
IC/IF  
1000  
500  
4000  
%
%
Saturated CTR  
IC/IF(sat)  
IF=10mA , VCE=1V  
IC=10mA , IF=1mA  
IC=100mA , IF=10mA  
1.0  
1.2  
Collector-Emitter  
V
CE(sat)  
V
Saturation Voltage  
0.3  
Isolation Electrical Characteristics (Ta=25°C)  
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
VS=0 , f=1MHz  
MIN.  
TYP.  
MAX.  
UNIT  
Capacitance Input to Output  
Isolation Resistance  
CS  
RS  
5×1010  
5000  
0.8  
1014  
pF  
VS=500V , R.H.60%  
AC, 1minute  
Ω
Vrms  
Vdc  
Isolation Voltage  
BVs  
AC, 1second, in oil  
DC, 1 minute, in oil  
10000  
10000  
3
2007-10-01  
TLP627,TLP627-2,TLP627-4  
Switching Characteristics (Ta=25°C)  
CHARACTERISTIC  
Rise Time  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
tr  
tf  
40  
15  
50  
15  
5
V
CC=10V  
Fall Time  
IC=10mA  
Turn-on Time  
Turn-off Time  
Turn-on Time  
Strage Time  
Turn-off Time  
ton  
toff  
tON  
ts  
RL=100Ω  
μs  
RL=180Ω (Fig.1)  
40  
80  
VCC=10V , IF=16mA  
tOFF  
Fig.1 SWITCHING TIME TEST CIRCUIT  
VCC  
IF  
RL  
VCE  
IF  
VCC  
VCE  
9V  
ts  
1V  
tON  
tOFF  
4
2007-10-01  
TLP627,TLP627-2,TLP627-4  
5
2007-10-01  
TLP627,TLP627-2,TLP627-4  
6
2007-10-01  
TLP627,TLP627-2,TLP627-4  
7
2007-10-01  
TLP627,TLP627-2,TLP627-4  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,  
cut, crush or dissolve chemically.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
8
2007-10-01  

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