TLP631(GB) [TOSHIBA]
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, 11-7A8, DIP-6;
| 型号： | TLP631(GB) |
| 厂家： | 
TOSHIBA |
| 描述： | Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, 11-7A8, DIP-6 控制器 |
| 文件： | 总8页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP631,TLP632
TOSHIBA Photocoupler GaAs IRed & Photo−Transistor
TLP631,TLP632
Programmable Controllers
Unit in mm
AC / DC−Input Module
Solid State Relay
The TOSHIBA TLP631 and TLP632 consist of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode in a
six lead plastic DIP.
TLP632 is no−base internal connection for high−EMI environments.
•
•
Collector−emitter voltage: 55 V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
•
•
Isolation voltage: 5000V
(min.)
rms
UL recognized: UL1577, file no. E67349
TOSHIBA
11−7A8
Weight: 0.4 g
Pin Configurations (top view)
TLP631
TLP632
1
6
5
4
1
6
5
2
3
2
3
4
1: Anode
1: Anode
2: Cathode
3: N.C.
2: Cathode
3: N.C.
4: Emitter
5: Collector
6: Base
4: Emitter
5: Collector
6: N.C
1
2007-10-01
TLP631,TLP632
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
IF
Rating
Unit
Forward current
60
−0.7
1
mA
Forward current derating (Ta ≥ 39°C)
Peak forward current (100μs pulse, 100pps)
Reverse voltage
ΔI / °C
F
mA / °C
I
A
FP
V
5
V
°C
R
Junction temperature
T
j
125
55
Collector−emitter voltage
V
V
CEO
CBO
ECO
EBO
Collector−base voltage (TLP631)
Emitter−collector voltage
V
V
V
80
V
7
V
Emitter−base voltage (TLP631)
Collector current
7
V
I
50
mA
mW
mW / °C
°C
C
Power dissipation
P
150
−1.5
125
−55~125
−55~100
260
250
−2.5
5000
C
Power dissipation derating (Ta ≥ 25°C)
Junction temperature
ΔP / °C
C
T
j
Storage temperature range
Operating temperature range
Lead soldering temperature (10s)
Total package power dissipation
Total package power dissipation derating (Ta≥ 25°C)
Isolation voltage (AC, 1 min., R.H. ≤ 60%)
T
°C
stg
opr
T
°C
T
°C
sol
P
mW
mW / °C
T
ΔP / °C
T
BV
S
V
rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Forward current
Collector current
V
―
―
5
16
1
24
25
10
85
V
CC
I
mA
mA
°C
F
I
―
C
Operating temperature
T
opr
−25
―
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01
TLP631,TLP632
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V
I
= 10 mA
F
1.0
―
1.15
―
1.3
10
―
V
F
Reverse current
Capacitance
I
V
= 5V
R
μA
pF
R
C
V = 0, f = 1 MHz
―
30
T
Collector−emitter breakdown
V
V
V
V
I
I
I
I
= 0.5 mA
= 0.1 mA
= 0.1 mA
= 0.1 mA
55
7
―
―
―
―
―
―
―
―
V
V
V
V
(BR) CEO
(BR) ECO
(BR) CBO
(BR) EBO
C
E
C
E
voltage
Emitter−collector breakdown
voltage
Collector−base breakdown
80
7
voltage
(TLP631)
Emitter−base breakdown
voltage
(TLP631)
V
V
= 24 V
―
―
10
2
100
50
nA
CE
CE
Collector dark current
I
CEO
= 24 V, Ta = 85°C
μA
Capacitance collector to
emitter
C
CE
V = 0, f = 1 MHz
―
10
―
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
MIn.
Typ.
Max.
Unit
%
50
100
―
―
―
60
―
600
600
―
I
I
I
= 5 mA, V = 5 V
CE
F
F
Current transfer ratio
I / I
C F
Rank GB
= 1 mA, V = 0.4 V
CE
Saturated CTR
I
/ I
F (sat)
%
V
C
V
Rank GB
30
―
Collector−emitter saturation
= 2.4 mA, I = 8 mA
F
―
―
0.4
CE (sat)
C
voltage
3
2007-10-01
TLP631,TLP632
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= 0, f = 1 MHz
Min.
Typ.
Max.
Unit
Capacitance (input to output)
Isolation resistance
C
R
V
V
―
5×1010
5000
―
0.8
1014
―
―
―
―
―
pF
S
S
S
S
= 500 V, R.H. ≤ 60%
Ω
AC, 1 minute
―
V
rms
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
10000
10000
―
V
dc
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Rise time
t
―
―
―
―
―
―
―
―
―
―
2
3
―
―
―
―
―
―
―
―
―
―
r
Fall time
t
f
V
= 10 V, I = 2 mA
C
CC
R = 100Ω
μs
L
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
Turn−on time
Storage time
Turn−off time
t
t
3
on
off
3
t
2
ON
R = 1.9 kΩ
R
V
(Fig.1)
(Fig.1)
L
BE
CC
= OPEN
μs
μs
t
15
25
2
s
= 5 V, I = 16 mA
F
t
OFF
t
ON
R = 1.9 kΩ
R
V
L
BE
CC
= 220 kΩ(TLP631)
t
12
20
s
= 5 V, I = 16 mA
F
t
OFF
Fig. 1 Switching time test circuit
I
F
V
CC
I
F
t
S
V
CC
R
L
4.5V
0.5V
V
CE
V
CE
R
BE
t
t
OFF
ON
4
2007-10-01
TLP631,TLP632
I
– Ta
P – Ta
C
F
100
80
200
160
120
60
40
80
20
0
40
0
−20
0
20
40
60
80
100
120
-20
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
– D
R
I
– V
FP
F
F
100
5000
3000
Ta = 25°C
Pulse width ≤ 100μs
50
30
Ta = 25°C
1000
10
500
300
5
3
100
1
50
30
0.5
0.3
10
3
0.1
0.4
10−3
3
10−2
3
10−1
3
10０
0.6
0.8
1.0
1.2
F
1.4
1.6
Duty cycle ratio
D
R
Forward voltage
V
(V)
ΔV / ΔTa – I
I
– V
FP
F
F
FP
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
1000
500
300
100
50
30
10
Pulse width ≤ 100μs
Repetitive frequency
= 100 Hz
5
3
-0.8
-0.4
Ta = 25°C
1
0.4
0.1
0.3
1
3
10
30
0.8
1.2
1.6
2.0
2.4
Forward current
I
F
(mA)
Pulse forward voltage
V
(V)
F
5
2007-10-01
TLP631,TLP632
I
– V
I – V
C CE
C
CE
80
60
30
25
20
Ta = 25°C
Ta = 25°C
50 mA
40 mA
30 mA
50 mA
30 mA
20 mA
20 mA
40
15 mA
10 mA
15
10
5
10 mA
5 mA
P
MAX.
C
20
0
I
= 2 mA
F
I
= 5 mA
F
0
0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
I
C
– I
I /I – I
C F F
F
100
1000
50
30
Sample A
500
300
10
Sample B
5
3
Sample A
100
1
50
30
Sample B
05
0.3
Ta = 25°C
Ta = 25°C
V
V
= 5 V
CE
CE
V
V
= 5 V
CE
CE
0.1
= 0.4 V
= 0.4 V
0.05
0.03
0.3
10
0.3
1
3
10
30
100
300
1000
1
3
10
30
100
Forward current
I
F
(mA)
Forward current IF（mA）
TLP631
I
–I
R
TLP631
I
– I
PB F
F at BE
Ｃ
300
100
100
50
Ta = 25°C
Ta = 25°C
V
= 5 V
CE
30
V
V
= 0 V
= 5 V
CB
CB
50
30
50 kΩ
10
100 kΩ
500 kΩ
= ∞
10
5
3
5
3
V
CC
V
CB
I
R
BE
F
1
I
F
A
1
0.5
0.3
0.5
0.3
A
0.1
0.1
0.1
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
300
Forward current
I
F
(mA)
Forward current
I
F
(mA)
6
2007-10-01
TLP631,TLP632
I
– Ta
V
– Ta
CE(sat)
CEO
0.20
0.16
0.12
I
I
= 5 mA
= 1 mA
F
101
100
C
V
= 24 V
CE
10 V
5 V
10-1
0.08
0.04
0
10-2
-40
-20
0
20
40
60
80
100
10-3
Ambient temperature Ta (°C)
10-4
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
TLP631
Switching Time – R
L
50
30
t
OFF
ts
10
Ta = 25°C
I
= 16 mA
F
V
= 5 V
CC
5
3
R
= 220 kΩ
BE
t
ON
1
1
3
10
30
100
Load resistance
R
L
(kΩ)
I
– Ta
C
100
V
= 5 V
CE
I
= 25 mA
F
50
30
10 mA
TLP631 Switching Time – R
BE
50
30
5 mA
10
t
OFF
ts
5
3
10
Ta = 25°C
I
= 16 mA
= 5 V
1 mA
F
1
V
5
3
CC
R
= 1.9 kΩ
L
0.5
0.3
t
ON
0.5 mA
1
100k
0.1
-20
0
20
40
60
80
100
300k
1M
3M
∞
Ambient temperature Ta (°C)
Base-emitter resistance
R
BE
(Ω)
7
2007-10-01
TLP631,TLP632
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
8
2007-10-01
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