TLP651_07 [TOSHIBA]

Microprocessor System Interfaces; 微处理器系统接口


型号：	TLP651_07
厂家：	TOSHIBA
描述：	Microprocessor System Interfaces 微处理器系统接口微处理器
文件：	总7页 (文件大小：478K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TLP651

TOSHIBA Photocoupler GaAℓAs IRed & Photo−IC

TLP651

Digital Logic Ground Isolation

Unit in mm

Line Receiver

Microprocessor System Interfaces

Switching Power Supply Feedback Control

Analog Signal Isolation

The TOSHIBA TLP651 consists of a GaAℓAs high−output light emitting

diode and a high speed detector of one chip photo diode−transistor.

This unit is 8−lead DIP.

TLP651 has internal base connection. This base pin should be used for

analog application or enable operation. If base pin is open, output signal

will be noisy by environmental condition. For this case, TLP650 is

suitable.

•

Isolation voltage: 5000V

(min.)

rms

TOSHIBA

11−10C4

Switching speed: t

= 0.3μs (typ.)

pHL

Weight: 0.54g

= 0.5μs (typ.) (R = 1.9kΩ)

pLH

•

TTL compatible

UL recognized: UL1577, file no. E67349

BSI approved: BS EN60065: 2002

Certificate no. 7613

Pin Configuration (top view)

BS EN60950-1: 2002

Certificate no. 7614

Schematic

2007-10-01

TLP651

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Forward current

(Note 1)

(Note 2)

Pulse forward current

Peak transient forward

current

FPT

(Note 3)

(Note 4)

Reverse voltage

Diode power dissipation

Output current

Peak output current

Output voltage

−0.5~15

Supply voltage

Base current

Emitter−base reverse voltage

Output power dissipation

Operating temperature range

Storage temperature range

Lead solder temperature (10s)

(Note 5)

100

°C

−55~100

−55~125

260

opr

stg

sol

(Note 6)

(Note 7)

Isolation voltage

(AC, 1min., R.H.≤ 60%)

5000

rms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(Note 1) Derate 0.8mA above 70°C.

(Note 2) 50% duty cycle,1ms pulse width.

Derate 1.6mA / °C above 70°C.

(Note 3) Pulse width ≤ 1μs, 300pps.

(Note 4) Derate 0.9mW / °C above 70°C.

(Note 5) Derate 2mW / °C above 70°C.

(Note 6) Soldering portion of lead: Up to 2mm from the body of the device.

(Note 7) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted

together.

2007-10-01

TLP651

Electrical Characteristics (Ta = 25°C)

Characteristic

Forward voltage

Symbol

Test Condition

Min.

Typ.

1.65

Max.

Unit

= 16mA

―

1.85

Forward voltage

ΔV / ΔTa

―

−2

―

mV / °C

temperature coefficient

Reverse current

= 5V

―

μA

Capacitance between

terminal

= 0, f = 1MHz

―

= 0mA, V

= V = 5.5V

―

500

OH (1)

OH (2)

High level output

current

= V = 15V

―

μA

= V = 15V

―

250

μA

Ta = 70°C

High level supply

voltage

= 0mA, V

= 15V

0.01

CCH

Ta = 25°C

―

= 16mA

Rank: O

Ta = 0~70°C

Current transfer ratio

/ I

= 4.5V

= 0.4V

Rank: O

= 16mA, V

= 1.1mA

= 4.5V,

Low level output

voltage

―

0.4

(Rank 0: I = 2.4mA)

R.H.≤ 60%, V = 500V

5×10¹⁰

10¹⁴

0.8

―

Ω

(Note 7)

Isolation resistance

Capacitance between

input to output

= 0, f = 1MHz

(Note 7)

―

Switching Characteristics (Ta = 25°C, V = 5V)

Test

Cir−

Characteristic

Symbol

Test Condition

= 0→16mA, V = 5V,

Min.

Typ.

Max.

Unit

cuit

―

0.2

0.3

1.0

0.5

0.8

2.0

1.2

Propagation delay time

μs

pHL

pLH

(H→L)

R =4.1kΩ Rank O: R =1.9kΩ

= 16→ 0mA, V

= 5V,

Propagation delay time

μs

(L→H)

R =4.1kΩ Rank O: R =1.9kΩ

Common mode transient

immunity at logic high

output

= 0mA, V

R = 4.1kΩ

= 200V

CM p−p

―

400

―

V / μs

(Note 8)

(Rank O: R = 1.9kΩ)

Common mode transient

immunity at logic low

output

=16mA, V

R = 4.1kΩ

= 200V

CM p−p

−1000

(Rank O: R = 1.9kΩ)

2007-10-01

TLP651

(Note 8) CM is the maximum rate of fall of the common mode voltage that can be sustained with the output

voltage in the logic low state (V < 0.8V).

CM is the maximum rate of rise of the common mode voltage that can be sustained with the output

voltage in the logic high state (V > 2.0V).

(Note 9) Maximum electrostatic discharge voltage for any pins: 100V (C = 200pF, R = 0).

Test Circuit 1: Switching Time Test Circuit

Test Circuit 2: Common Mode Noise Immunity Test Circuit

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TLP651

2007-10-01

TLP651

2007-10-01

TLP651

RESTRICTIONS ON PRODUCT USE

20070701-EN

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his

document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which

manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

may result from its use. No license is granted by implication or otherwise under any patents or other rights of

TOSHIBA or the third parties.

• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,

cut, crush or dissolve chemically.

• Please contact your sales representative for product-by-product details in this document regarding RoHS

compatibility. Please use these products in this document in compliance with all applicable laws and regulations

that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses

occurring as a result of noncompliance with applicable laws and regulations.

2007-10-01

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