TLP750_07 [TOSHIBA]
Digital Logic Ground Isolation; 数字逻辑接地隔离
| 型号： | TLP750_07 |
| 厂家： | 
TOSHIBA |
| 描述： | Digital Logic Ground Isolation |
| 文件： | 总7页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP750
TOSHIBA Photocoupler GaAℓAs Ired + Photo IC
TLP750
Digital Logic Ground Isolation
Unit in mm
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Analog Signal Isolation
The TOSHIBA TLP750 consists of GaAℓAs high−output light emitting
diode and a high speed detector of one chip photo diode−transistor.
This unit is 8−lead DIP.
TLP750 has no internal base connection, and is suitable for application in
noisy environmental conditions.
•
•
•
•
Switching speed: t
Switching speed: t
=0.3μs(typ.)
pHL
=0.5μs(typ.)(R =1.9kΩ)
pLH
L
UL recognized: UL1577, file No. E67349
BSI approved: BS EN60065: 2002,
Certificate No.8869
TOSHIBA
11−10C4
Weight: 0.54g
BS EN60950-1: 2002,
Certificate No.8870
Pin Configuration (top view)
•
•
Isolation voltage: 5000V (min.)
rms
1
2
3
4
5
6
7
8
: N.C.
Option(d4)type
1
2
8
7
: Anode
: Cathode
: N.C.
VDE approved: DIN EN 60747-5-2,
Certificate No. 40009302
Maximum operating insulation voltage: 890V
PK
3
4
6
5
: Emitter
: Collector
: N.C.
Highest permissible over voltage: 8000V
PK
(Note) When a EN 60747-5-2 approved type is needed,
please designate the “Option(D4)”
: Cathode
•
Creepage distance: 6.4mm(min.)
Clearance: 6.4mm(min.)
Insulation thickness: 0.4mm(min.)
Schematic
I
CC
V
V
CC
8
I
F
2
3
V
F
I
O
O
6
5
GND
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2007-10-01
TLP750
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
(Note 1)
(Note 2)
I
25
50
mA
mA
F
Pulse forward current
I
FP
Peak transient forward
current
I
1
5
A
V
FPT
(Note 3)
(Note 4)
Reverse voltage
V
P
R
D
Diode power dissipation
45
mW
Output current
I
8
mA
mA
V
O
Peak output current
Output voltage
I
16
OP
V
−0.5~15
−0.5~15
O
Supply voltage
V
V
CC
Output power dissipation
P
100
mW
O
(Note 5)
Operating temperature range
Storage temperature range
Lead solder temperature(10s)
T
−55~100
−55~125
°C
°C
opr
T
stg
sol
T
260
°C
(Note 6)
(Note 7)
Isolation voltage
(AC, 1min., R.H=60%)
BV
5000
V
rms
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Derate 0.8mA / °C above 70°C.
(Note 2) 50% duty cycle, 1ms pulse width.
Derate 1.6mA / °C above 70°C.
(Note 3) Pulse width ≤ 1μs, 300pps.
(Note 4) Derate 0.9mW / °C above 70°C.
(Note 5) Derate 2mW / °C above 70°C.
(Note 6) Soldering portion of lead: Up to 2mm from the body of the device.
(Note 7) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted
together.
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2007-10-01
TLP750
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
Min.
―
Typ.
1.65
−2
Max.
Unit
V
V
I =16mA
1.85
―
F
F
Forward voltage
temperature coefficient
ΔV / ΔTa
I =16mA
F
―
mV / °C
μA
F
Reverse current
I
V =5V
R
―
―
10
R
Capacitance between
terminal
C
T
V =0, f=1MHz
F
―
45
―
pF
I
I
I =0mA, V =V =5.5V
CC
―
―
3
500
5
nA
OH(1)
OH(2)
F
O
High level output
current
I =0mA, V =V =15V
CC
―
μA
F
O
I =0mA, V =V =15V
F
CC
O
I
―
―
―
50
1
μA
μA
OH
Ta=70°C
High level supply
voltage
I
I =0mA, V =15V
F CC
0.01
CCH
Ta=25°C
Rank: 0
Ta=0~70°C
10
19
5
30
30
―
―
―
―
―
―
I =16mA
F
Current transfer ratio
I /I
O F
V
=4.5V
CC
%
V
V =0.4V
O
Rank: 0
15
I =16mA, V =4.5V,
CC
F
Low level output
voltage
V
I =1.1mA
―
―
0.4
OL
O
(rank 0: I =2.4mA)
O
R.H.=60%, V=5000V
1×1012
1014
0.8
―
―
Ω
DC
Isolation resistance
R
S
S
(Note 7)
(Note 8)
Capacitance between
input to output
C
V =0, f=1MHz
S
―
pF
Switching Characteristics (Ta = 25°C, V = 5V)
CC
Test
Cir−
cuit
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
I =0→16mA, V =5V,
CC
―
―
―
―
0.2
0.3
1.0
0.5
0.8
0.8
2.0
1.2
F
Propagation delay time
(H→L)
t
μs
pHL
pLH
R =4.1kΩ Rank 0: R =1.9kΩ
L
L
1
2
I =16→0mA, V =5V,
F CC
Propagation delay time
(L→H)
t
μs
R =4.1kΩ Rank 0: R =1.9kΩ
L
L
Common mode transient
immunity at logic high
output
I =0mA, V =200V
CM
R =4.1kΩ
L
F
p−p
C
―
―
1500
―
―
V / μs
V / μs
MH
(Note 8)
(Note 8)
(Rank 0: R =1.9kΩ)
L
Common mode transient
immunity at logic low
output
I =16mA, V =200V
CM
R =4.1kΩ
L
F
p−p
C
−1500
ML
(Rank 0: R =1.9kΩ)
L
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2007-10-01
TLP750
(Note 8) CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage
in the logic low state(V < 0.8V).
O
CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage
in the logic high state(V > 2.0V).
O
(Note 9) Maximum electrostatic discharge voltage for any pins: 100V(C=200pF, R=0)
Test Circuit 1: Switching Time Test Circuit
I
F
Pulse
Input
V
=5V
I
F
CC
1
2
3
4
8
7
6
5
0
PW=100μs
R
L
Duty ratio=1/10
5V
V
O
V
O
I
Monitor
F
Output
1.5V
1.5V
Monitor
V
OL
t HL
p
t LH
p
Test Circuit 2: Common Mode Noise Immunity Test Circuit
200V
V
=5V
CC
90%
10%
1
2
3
4
8
7
6
5
V
CM
I
F
R
L
0V
t
t
f
r
V
O
V
Output
O
5V
Monitor
(I
F=0mA)
2V
V
CM
0.8V
V
O
V
OL
Pulse generator
(I
F=16mA)
Z =50Ω
O
160(V)
160(V)
t (μs)
f
CM
=
,CM =
L
H
t (μs)
r
4
2007-10-01
TLP750
I
F
– V
F
ΔV /ΔTa – I
F
F
100
-2.6
-2.4
-2.2
-2.0
-1.8
Ta = 25 ℃
30
10
3
1
0.3
0.1
-1.6
-1.4
0.03
0.01
1.0
1.2
1.4
1.6
V
1.8
2.0
0.1
0.3 0.5
1
3
5
10
30
Forward voltage
(V)
Forward current
I
F
(mA)
F
I
– Ta
I
O
– I
F
OH(1)
10
300
100
V
= 5 V
CC
5
3
V
= 0.4 V
O
Ta = 25 ℃
50
30
1
0.5
0.3
10
5
3
0.1
0.05
0.03
1
0.01
0.1
0.6
0.3
1
3
10
I
30
100
300
0
40
80
120
160
Forward current
(mA)
Ambient temperature Ta (°C)
F
I /I – I
O F
I /I – Ta
O F
F
1.2
1.0
0.8
0.6
0.4
100
V
V
= 5 V
CC
= 0.4 V
O
50
30
Ta = -25℃
25℃
100℃
10
Normalized to:
= 16mA
5
3
I
F
V
V
= 4.5V
CC
= 0.4V
0.2
0
O
Ta = 25°C
1
0.3 0.5
1
3
5
10
30 50
-40
-20
0
20
40
60
80
100
Forward current
I
F
(mA)
Ambient temperature Ta (°C)
5
2007-10-01
TLP750
I
O
– V
O
V
– I
F
O
5
V
= 5 V
CC
30 mA
V
=5V
CC
I
F
10
8
Ta = 25 ℃
25 mA
20 mA
4
3
R
L
V
O
6
15 mA
10 mA
= 5 mA
Ta=25°C
R
L
= 2 KΩ
2
1
0
4
2
0
3.9 kΩ
10 kΩ
I
F
0
4
8
12
16
20
24
0
1
2
3
4
5
6
7
Forward current
I
F
(mA)
Output voltage
V
O
(V)
t HL, t LH – R
p
p
L
5
3
I
= 16 mA
F
V
= 5 V
CC
Ta = 25 ℃
t LH
p
1
0.5
0.3
t HL
p
0.1
1
3
5
10
30
50
100
Load resistance
R
L
(kΩ)
6
2007-10-01
TLP750
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
7
2007-10-01
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