TLP763J [TOSHIBA]
TOSHIBA Photocoupler GaAs Ired+Photo−Triac; 东芝光电耦合的GaAs红外发光二极管+光电可控硅型号: | TLP763J |
厂家: | TOSHIBA |
描述: | TOSHIBA Photocoupler GaAs Ired+Photo−Triac |
文件: | 总5页 (文件大小:123K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLP763J
TOSHIBA Photocoupler GaAs Ired+Photo−Triac
TENTATIVE
TLP763J
Office Machine
Household Use Equipment
Triac Driver
Unit in mm
Solid State Relay
The TOSHIBA TLP763J consists of a GaAs infrared LED optically
coupled to a zero voltage crossing turn−on photo−triac in a 6 lead plastic
DIP.
·
·
·
·
·
·
Peak off−state voltage: 600 V (min.)
Trigger LED current: 10 mA (max.)
On−state current: 100 mA (max.)
Isolation voltage: 4000Vrms (min.)
UL recognized: UL1577, file No. E67349
BSI approved: BS EN60065: 1994,
Certificate No. 7831
BS EN60065: 1992,
Certificate No. 7832
TOSHIBA
11−7A10
·
SEMKO approved: SS−EN60065 (EN60065, 1993)
SS−EN60950 (EN60950, 1992)
SS−EN60335 (EN60335, 1988)
Certificate No. 9522145
Weight: 0.42g
Pin Configuration (top
view)
·
Option (D4) type
VDE approved: DIN VDE0884, 06.92
Certificate No. 91803
1
2
3
6
Maximum operating insulation voltage: 890 V
PK
Highest permissible over voltage: 6000 V
PK
4
ZC
(Note) When a VDE0884 approved type is needed,
please designate the “option (D4)”
1 : Anode
2 : Cathode
3 : Nc
4 : Triac 1
6 : Triac 2
7.62mm pich
TLP763J type
: 7.0mm (min.)
10.16mm pich
TLP763JF type
·
Creepage distance
Clearance
8.0mm (min.)
: 7.0mm (min.)
8.0mm (min.)
4.0mm (min.)
0.5mm (min.)
Internal creepage path : 4.0mm (min.)
Insulation thickness : 0.5mm (min.)
1
2002-09-25
TLP763J
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
50
-0.7
1
mA
mA/°C
A
F
Forward current derating (Ta ≥ 53°C)
Peak forward current (100 µs pulse, 100 pps)
Reverse voltage
∆I /°C
F
I
FP
V
5
V
R
Junction temperature
T
125
600
100
50
°C
j
Off-state output terminal voltage
V
V
DRM
Ta = 25°C
On-state RMS current
I
mA
T(RMS)
Ta = 70°C
On-state current derating (Ta ≥ 25°C)
∆I /°C
-1.1
2
mA/°C
A
T
Peak on-state current (100µs pulse, 120pps)
I
TP
Peak nonrepetitive surge current
(PW = 10 ms, DC = 10%)
I
1.2
A
TSM
Junction temperature
Storage temperature range
T
115
-55~125
-40~100
260
°C
°C
j
T
stg
opr
Operating temperature range
Lead soldering temperature (10s)
Isolation voltage (AC, 1 min., R.H.≤ 60%)
T
°C
T
°C
sol
BV
4000
Vrms
S
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Forward current
V
―
15
―
20
―
―
240
25
1
V
ac
AC
I
mA
A
F
Peak on-state current
I
―
TP
Operating temperature
T
-25
85
°C
opr
2
2002-09-25
TLP763J
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
= 10 mA
F
Min.
Typ.
Max.
Unit
V
I
1.0
―
―
―
―
―
1.15
―
1.3
10
V
µA
pF
nA
V
F
Reverse current
I
V = 5 V
R
R
Capacitance
C
T
V = 0, f = 1 MHz
= 600 V
30
―
Peak off-state current
Peak on-state voltage
Holding current
I
V
10
1000
3.0
―
DRM
DRM
V
I
= 100 mA
TM
1.7
0.6
TM
I
―
mA
H
Critical rate of rise of
dv / dt
Vin = 240 V, Ta = 85°C
I = 15 mA
T
―
―
500
0.2
―
―
V/µs
V/µs
off-state voltage
Critical rate of rise of
commutating voltage
dv / dt (c)
Vin = 60Vrms
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Symbol
Test Condition
Min.
Typ.
Max.
Unit
I
V
= 6 V
T
―
―
―
―
10
50
mA
V
FT
Inhibit voltage
V
I
I
= rated I
= rated I
IH
F
FT
FT
F
Leakage in inhibited state
I
―
200
600
µA
IH
V
V
V
= rated V
T
S
S
DRM
Capacitance (input to output)
Isolation resistance
C
R
= 0, f = 1 MHz
= 500 V
―
1×1012
4000
―
0.8
1014
―
―
―
―
―
pF
S
Ω
S
AC, 1 minute
―
Vrms
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
10000
10000
―
V
dc
3
2002-09-25
TLP763J
I
– Ta
I
– Ta
T (RMS)
F
100
80
60
40
20
0
200
160
120
80
40
0
-20
40
60
80
100
120
-20
40
60
80
100
120
0
20
0
20
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
– D
I
– V
F
FP
R
F
3000
1000
100
Pulse width ≤ 100µs
Ta = 25°C
Ta = 25°C
50
30
500
300
10
5
3
100
1
50
30
0.5
0.3
10
0.1
100
0.8
1.0
1.2
1.4
1.6
1.8
3
2
1
-
-
-
10
3
10
3
10
3
3
0.6
Duty cycle ratio
D
R
Forward voltage
V
(V)
F
ꢀV / ꢀTa – I
I
– V
FP FP
F
F
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
1000
500
300
100
50
30
10
Pulse width ≤ 10µs
Repetitive frequency
= 100Hz
5
3
Ta = 25°C
1
0.3 0.5
1
3
5
10
(mA)
30 50
1.0
1.4
1.8
2.2
2.6
0.1
0.6
Forward current
I
F
Pulse forward voltage
V
(V)
FP
4
2002-09-25
TLP763J
RESTRICTIONS ON PRODUCT USE
000707EBC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5
2002-09-25
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