TLP921(F) [TOSHIBA]
IC,REFLECTIVE DETECTOR,1-CHANNEL,GAP-1EVAR;
| 型号： | TLP921(F) |
| 厂家： | 
TOSHIBA |
| 描述： | IC,REFLECTIVE DETECTOR,1-CHANNEL,GAP-1EVAR 晶体 光电 传感器 换能器 线性位置传感器 晶体管 光电晶体管 |
| 文件： | 总8页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP921
Toshiba Photoreflective sensor Infrared LED + Phototransistor
TLP921
Inkjet printer’s ink-level monitoring
TLP921 is a reflective photosensor combining a GaAs infrared LED with
a Si phototransistor.
·
Flush-mount package on PCB: Applied PCB thickness = 1.6 mm or
thinner
·
·
·
·
Positioning pin and single-sided screw-mount type
Short lead type: Lead length = 2.8 ± 0.3 mm
Phototransistor impermeable to visible light
Package material: polybutylene-terephthalate (UL94V-0, black)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
50
Unit
mA
Forward current
I
F
Forward current derating
DI °C
F/
-0.33
mA/°C
(Ta > 25°C)
Reverse voltage
V
5
35
5
V
V
R
JEDEC
―
―
―
Collector-Emitter voltage
Emitter-Collector voltage
Collector power dissipation
Collector power dissipation
V
CEO
ECO
JEITA
V
V
TOSHIBA
P
75
mW
C
Weight: 0.35 g (typ.)
DP °C
-1
mW/°C
C/
derating
(Ta > 25°C)
Collector current
I
50
mA
°C
°C
°C
C
Operating temperature
Storage temperature
Soldering temperature
T
-30~85
-40~100
260
opr
T
stg
sol
(5 s) (Note 1)
T
Note 1: Soldering is performed 1.5 mm from the bottom of the package.
Marking
Monthly lot
number
January to December
are denoted by letters
A to L respectively
Month of
manufacture
Year of
Last decimal digit of
manufacture the year of
manufacture
1
2002-04-03
TLP921
Electrical and Optical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Symbol
Test Condition
= 20 mA
F
Min
Typ.
Max
Unit
V
I
¾
1.25
¾
1.4
10
V
F
Reverse current
I
V
= 5 V
R
¾
mA
nm
mA
nm
mA
mA
R
Peak emission wavelength
Dark current
l
P
I
= 20 mA
¾
940
¾
¾
F
I
(I
)
V
= 24 V, I = 0
¾
¾
0.1
¾
D
CEO
CE
F
Peak sensitivity wavelength
Collector current
l
¾
870
¾
P
C
I
V
V
= 5 V, I = 20 mA
(Note 2) 580
2600
120
CE
CE
F
Leakage current
I
= 5 V, I = 20 mA
(Note 3)
¾
¾
LEAK
F
Collector-Emitter saturation
voltage
V
I
= 20 mA, I = 0.3 mA
¾
0.1
0.4
V
CE (sat)
F
C
Rise time
Fall time
t
t
V
= 2 V, I = 0.5 mA
¾
¾
38
48
90
r
CE
C
ms
R
= 1 kW, d = 8 mm
(Note 4)
110
f
L
Note 2: The following drawings show condition and the layout of reflectors.
Right angle prism (material: BK7)
Thickness:7 mm
7 mm
7 mm
8 mm
Sensor
Note 3: Measurement layout drawing for leakage current
Evaporated surface
of aluminum
1 mm
Evaporated
aluminum glass
8 mm
Sensor
Note 4: Measurement circuit and waveforms for Switching time
Prism
I
F
I
V
V
F
CC
90%
10%
R
L
OUT
V
OUT
t
t
f
r
2
2002-04-03
TLP921
Handling Precautions
·
When removing flux with chemicals after soldering, clean only the soldered part of the leads. Do not
immerse the entire package in the cleaning solvent. Chemical residue on the LED emitter or the
photodetector inside the phototransistor case may adversely affect the optical characteristics of the device
and may drastically reduce the collector current.
·
The case is made of polybutylene-terephthalate. Oil or chemicals may cause the package to melt or crack.
Care must be taken in relation to the environment in which the device is to be installed.
Mount the device on a level surface.
·
·
The collector current characteristic will deteriorate over time due to current flowing in the infrared LED.
The design of circuits which incorporate the device must take into account the change in collector current
over time.
·
When the 2-mm hole is used as screw fixation, please fastening torque 0.1 N or less.
3
2002-04-03
TLP921
Package Dimensions
Weight: 0.35g (typ.)
Pin connection
1: Anode
1
2
4
3
2: Cathode
3: Emitter
4: Collector
4
2002-04-03
TLP921
I
– Ta
P – Ta
C
F
80
60
40
20
0
80
60
40
20
0
0
20
40
60
80
100
0
20
40
60
80
100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
– V
(typ.)
I
– I
F
(typ.)
F
F
C
100
5000
1000
Ta = 25°C
V
V
= 2 V
= 5 V
CE
CE
50
30
100
10
1
10
5
3
Ta = 75°C
50
25
0
-25
1.2
1
0.8
0.9
1.0
1.1
1.3
1.4
0.1
0.3
1
3
10
30
100
(mA)
300 1000
Forward voltage
V
(V)
F
Forward current
I
F
Relative I – Ta
(typ.)
I
– V
CE
(typ.)
C
C
1.2
1
1200
1000
800
600
400
200
0
Ta = 25°C
20
0.8
0.6
0.4
0.2
15
10
V
= 5 V
CE
I
I
I
= 20 mA
= 10 mA
= 5 mA
F
F
F
I
= 5mA
F
-40
-20
0
20
40
60
80
100
0
2
4
6
8
10
12
Ambient temperature Ta (°C)
Collector-Emitter voltage
V
(V)
CE
5
2002-04-03
TLP921
V
– Ta
(typ.)
I
(I ) – Ta
CEO
(typ.)
CE (sat)
D
0.2
0.16
0.12
0.08
0.04
0
5
1
V
= 24 V
CE
10
1
-
10
5
2
-
3
-
4
-
10
10
10
IF = 20mA
I
I
= 0.3 mA
= 0.5 mA
C
C
-40
-20
0
20
40
60
80
100
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Switching characteristics
Switching characteristics
(saturated operation)
(non saturated operation) (typ.)
(typ.)
3000
1000
3000
1000
t
f
t
r
t
f
t
d
100
10
1
100
t
s
10
t
r
t
d
t
s
1
Ta = 25°C
Ta = 25°C
V
= 2 V
V
V
= 5 V
>
=
CE
CE
1
V
OUT
= 0.5 V
4.6 V
OUT
0.5
0.5
1
10
100
1
10
100
Load resistance
R
(kW)
L
Load resistance
R
(kW)
L
6
2002-04-03
TLP921
Spectral response characteristic
(typ.)
Wavelength characteristic (typ.)
1.0
0.8
0.6
0.4
0.2
0
100
80
60
40
20
0
Ta 25°C
I
= 20 mA
F
Ta = 25°C
820
860
900
940
(nm)
980
1020
0
200
400
600
800
1000
1200
Wavelength
l
Wavelength
l
(nm)
Detecting position characteristic I
Detecting position characteristic II
< Relative I – X direction > (typ.)
C
< Relative I – Y direction > (typ.)
C
1.2
1
1.2
1
Ta = 25°C
I
= 20 mA
F
V
CE
= 5 V
Prism
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
Ta = 25°C
I
= 20 mA
F
V
= 5 V
CE
-l
+l
Prism
-l
+l
-5
-4
-3
-2
-1
0
1
2
3
4
5
-5
-4
-3
-2
-1
0
1
2
3
4
5
Prism moving distance
I
(mm)
Prism moving distance
I
(mm)
Detecting distance characteristic
< Relative I – Z direction > (typ.)
C
1
0.3
0.1
Ta = 25°C
I
= 20 mA
F
V
= 5 V
CE
Prism
0.03
0.01
d
0
2
4
6
8
10
12
14
16
d
18
20
Distance between device and prism
(mm)
7
2002-04-03
TLP921
RESTRICTIONS ON PRODUCT USE
000707EAC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
8
2002-04-03
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