TLRME50T [TOSHIBA]
TOSHIBA InGaALP LED; 东芝的InGaAlP LED
| 型号： | TLRME50T |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA InGaALP LED |
| 文件： | 总12页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TOSHIBA InGaAℓP LED
TLRE50T,TLRME50T,TLSE50T,TLOE50T,TLYE50T,
TLPYE50T,TLGE50T,TLFGE50T,TLPGE50T
Panel Circuit Indicators
Unit: mm
·
·
·
·
·
φ3 mm package
InGaAℓP technology
All plastic mold type
Transparent lens
Line-up: 6 colors (red, orange, yellow, pure yellow, green and pure
green)
·
·
·
High intensity light emission
Excellent low current light output
Applications: message boards, security devices and dashboard
displays
Line-up
Product Name
Color
Material
TLRE50T
TLRME50T
TLSE50T
TLOE50T
TLYE50T
TLPYE50T
TLGE50T
TLFGE50T
TLPGE50T
Red
Red
JEDEC
―
―
Red
JEITA
Orange
Yellow
TOSHIBA
Weight: 0.14 g
4-3E1A
InGaAlP
Pure Yellow
Green
Green
Pure Green
1
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
Maximum Ratings (Ta = 25°C)
Operating
Storage
Forward Current
Product Name
Reverse Voltage
(V)
Power Dissipation
(mW)
Temperature
Temperature
I
(mA)
V
P
D
F
R
T
(°C)
T
(°C)
stg
opr
TLRE50T
TLRME50T
TLSE50T
TLOE50T
TLYE50T
TLPYE50T
TLGE50T
TLFGE50T
TLPGE50T
50
50
50
50
50
50
50
50
50
4
120
120
120
120
120
120
120
120
120
4
4
4
4
4
4
4
4
-40~100
-40~120
Electrical and Optical Characteristics (Ta = 25°C)
Luminous Intensity
Forward Voltage
Reverse Current
Typ. Emission Wavelength
Product Name
I
V
I
R
V
F
Min
850
Typ.
I
Typ.
1.9
Max
2.4
I
Max
50
V
R
l
l
P
Dl
I
F
F
F
d
TLRE50T
TLRME50T
TLSE50T
TLOE50T
TLYE50T
TLPYE50T
TLGE50T
TLFGE50T
TLPGE50T
Unit
630
626
613
605
587
580
571
565
558
(644)
(636)
(623)
(612)
(590)
(583)
(574)
(568)
(562)
nm
20
20
20
20
20
20
20
20
20
20
mA
1800
20
20
20
20
20
20
20
20
20
mA
20
20
20
20
20
20
20
20
20
mA
4
23
20
20
17
14
17
15
14
850
1530
1530
1530
850
2200
3500
4500
3500
2500
1500
1000
600
1.9
1.9
2.0
2.0
2.0
2.0
2.0
2.1
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
50
50
50
50
50
50
50
50
mA
4
4
4
4
4
4
4
4
V
476
272
153
mcd
V
Precautions
Please be careful of the following:
·
·
·
Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 2 mm from the body of the device)
If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to
the resin. Soldering should be performed after lead forming.
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLRE50T
I
– V
I
– I
F
F
V
F
100
10000
1000
100
Ta = 25°C
Ta = 25°C
50
30
10
5
3
1
10
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
1
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
– Tc
Relative luminous intensity – Wavelength
V
3
1
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
0.5
0.3
0.1
-20
0
60
80
580
600
620
640
660
680
700
20
40
Case temperature Tc (°C)
Wavelength
l
(nm)
Radiation pattern
I
– Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
3
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLRME50T
I
– V
I
– I
F
F
V
F
100
10000
1000
100
Ta = 25°C
Ta = 25°C
50
30
10
5
3
1
10
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
1
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
– Tc
Relative luminous intensity – Wavelength
V
10
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
5
3
1
0.5
0.3
0.1
-20
0
60
80
20
40
580
600
620
640
660
680
700
Case temperature Tc (°C)
Wavelength
l
(nm)
Radiation pattern
I
– Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
4
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLSE50T
I
– V
I
– I
F
F
V
F
100
10000
1000
100
Ta = 25°C
Ta = 25°C
50
30
10
5
3
1
10
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
1
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
– Tc
Relative luminous intensity – Wavelength
V
3
1
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
0.5
0.3
0.1
-20
0
60
80
560
580
600
620
640
660
680
20
40
Case temperature Tc (°C)
Wavelength
l
(nm)
Radiation pattern
I
– Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
5
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLOE50T
I
– V
I
– I
F
F
V
F
100
30000
10000
Ta = 25°C
Ta = 25°C
50
30
10
1000
100
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
1
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
– Tc
Relative luminous intensity – Wavelength
V
3
1
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
0.5
0.3
0.1
-20
0
60
80
540
560
580
600
620
640
660
20
40
Case temperature Tc (°C)
Wavelength
l
(nm)
Radiation pattern
I
– Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
6
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLYE50T
I
– V
I
– I
F
F
V
F
100
10000
1000
100
Ta = 25°C
Ta = 25°C
50
30
10
5
3
1
10
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
1
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
– Tc
Relative luminous intensity – Wavelength
V
3
1
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
0.5
0.3
0.1
-20
0
60
80
540
560
580
600
620
640
660
20
40
Case temperature Tc (°C)
Wavelength
l
(nm)
Radiation pattern
I
– Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
7
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLPYE50T
I
– V
I
– I
F
F
V
F
100
10000
1000
Ta = 25°C
Ta = 25°C
50
30
10
5
3
100
20
1
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
1
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
– Tc
Relative luminous intensity – Wavelength
V
10
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
5
3
1
0.5
0.3
0.1
-20
0
20
40
60
80
540
560
580
600
620
640
660
Case temperature Tc (°C)
Wavelength
l
(nm)
Radiation pattern
I
– Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
8
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLGE50T
I
– V
I
– I
F
F
V
F
100
5000
1000
Ta = 25°C
Ta = 25°C
50
30
10
100
5
3
1
10
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
1
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
– Tc
Relative luminous intensity – Wavelength
V
10
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
5
3
1
0.5
0.3
0.1
-20
0
60
80
520
540
560
580
600
620
640
20
40
Case temperature Tc (°C)
Wavelength
l
(nm)
Radiation pattern
I
– Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
9
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLFGE50T
I
– V
I
– I
F
F
V
F
100
5000
1000
Ta = 25°C
Ta = 25°C
50
30
10
100
5
3
1
10
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
1
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
– Tc
Relative luminous intensity – Wavelength
V
10
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
5
3
1
0.5
0.3
0.1
-20
0
20
40
60
80
520
540
560
580
600
620
640
Case temperature Tc (°C)
Wavelength
l
(nm)
Radiation pattern
I
– Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
10
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TLPGE50T
I
– V
I
– I
F
F
V
F
100
10000
1000
100
Ta = 25°C
Ta = 25°C
50
30
10
5
3
1
10
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
1
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
– Tc
Relative luminous intensity – Wavelength
V
10
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
5
3
1
0.5
0.3
0.1
-20
0
60
80
20
40
520
540
560
580
600
620
640
Case temperature Tc (°C)
Wavelength
l
(nm)
Radiation pattern
I
– Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
11
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
RESTRICTIONS ON PRODUCT USE
000707EAC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
12
2002-01-17
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