TLSE53TF [TOSHIBA]
Panel Circuit Indicators; 面板电路指标
| 型号： | TLSE53TF |
| 厂家： | 
TOSHIBA |
| 描述： | Panel Circuit Indicators |
| 文件： | 总12页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
TOSHIBA InGaAℓP LED
TLRE53T(F),TLRME53T(F),TLSE53T(F),TLOE53T(F),TLYE53T(F),
TLPYE53T(F),TLGE53T(F),TLFGE53T(F),TLPGE53T(F)
Panel Circuit Indicators
Unit: mm
•
•
•
•
•
•
Lead(Pb)-free products (lead: Sn-Ag-Cu)
3mm package
InGaAℓP technology
All plastic mold
Transparent lens
Lineup: 6 colors (red, orange, yellow, pure yellow, green and pure
green)
•
•
•
High intensity light emission
Excellent low current light output
Applications: message boards, security devices and dashboard
displays
Lineup
Product Name
Color
Material
TLRE53T(F)
TLRME53T(F)
TLSE53T(F)
TLOE53T(F)
TLYE53T(F)
TLPYE53T(F)
TLGE53T(F)
TLFGE53T(F)
TLPGE53T(F)
Red
Red
JEDEC
JEITA
―
―
Red
TOSHIBA
4-4E1A
Orange
Yellow
Weight: 0.14 g(Typ.)
InGaAlP
Pure Yellow
Green
Green
Pure Green
1
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
Absolute Maximum Ratings (Ta = 25°C)
Operating
Temperature
Storage
Temperature
Forward Current
Reverse Voltage
(V)
Power Dissipation
(mW)
Product Name
I
(mA)
V
P
D
F
R
T
opr
(°C)
T
stg
(°C)
TLRE53T(F)
TLRME53T(F)
TLSE53T(F)
TLOE53T(F)
TLYE53T(F)
TLPYE53T(F)
TLGE53T(F)
TLFGE53T(F)
TLPGE53T(F)
50
50
50
50
50
50
50
50
50
4
120
120
120
120
120
120
120
120
120
4
4
4
4
4
4
4
4
−40~100
−40~120
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical and Optical Characteristics (Ta = 25°C)
Luminous Intensity
Forward Voltage
Reverse Current
Typ. Emission Wavelength
I
V
V
I
R
F
Product Name
Min
153
272
272
272
272
153
153
85
Typ.
400
600
800
1000
800
450
400
200
130
I
Typ.
1.9
1.9
1.9
2.0
2.0
2.0
2.0
2.0
2.1
Max
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
I
Max
50
50
50
50
50
50
50
50
50
μA
V
R
λ
λ
Δλ
20
23
20
20
17
14
17
15
14
I
F
F
F
d
P
TLRE53T (F)
TLRME53T (F)
TLSE53T (F)
TLOE53T (F)
TLYE53T (F)
TLPYE53T (F)
TLGE53T (F)
TLFGE53T (F)
TLPGE53T (F)
Unit
630
626
613
605
587
580
571
565
558
(644)
(636)
(623)
(612)
(590)
(583)
(574)
(568)
(562)
nm
20
20
20
20
20
20
20
20
20
mA
20
20
20
20
20
20
20
20
20
mA
20
20
20
20
20
20
20
20
20
mA
4
4
4
4
4
4
4
4
4
V
47.6
mcd
V
Precautions
Please be careful of the following:
Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 1.6 mm from the body of the device)
•
•
•
If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming.
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
TLRE53T(F)
I
– V
I
V
– I
F
F
F
100
3000
1000
Ta = 25°C
Ta = 25°C
50
30
10
100
5
3
1
1.6
10
1
1.7
1.8
1.9
2.0
2.1
2.2
2.3
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
V
– Tc
Relative luminous intensity – Wavelength
3
1
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
0.5
0.3
0.1
−20
0
60
80
580
600
620
640
660
680
700
20
40
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation pattern
I – Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
3
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
TLRME53T(F)
I
– V
I
V
– I
F
F
F
100
3000
1000
Ta = 25°C
Ta = 25°C
50
30
10
100
5
3
1
1.6
10
1
1.7
1.8
1.9
2.0
2.1
2.2
2.3
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
V
– Tc
Relative luminous intensity – Wavelength
10
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
5
3
1
0.5
0.3
0.1
−20
0
60
80
20
40
580
600
620
640
660
680
700
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation pattern
I – Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
4
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
TLSE53T(F)
I
– V
I
V
– I
F
F
F
100
10000
1000
100
Ta = 25°C
Ta = 25°C
50
30
10
5
3
1
1.6
10
1
1.7
1.8
1.9
2.0
2.1
2.2
2.3
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
V
– Tc
Relative luminous intensity – Wavelength
3
1
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
0.5
0.3
0.1
−20
0
60
80
560
580
600
620
640
660
680
20
40
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation pattern
I – Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
5
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
TLOE53T(F)
I
– V
I
V
– I
F
F
F
100
10000
1000
100
Ta = 25°C
Ta = 25°C
50
30
10
5
3
1
1.6
10
1
1.7
1.8
1.9
2.0
2.1
2.2
2.3
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
V
– Tc
Relative luminous intensity – Wavelength
3
1
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
0.5
0.3
0.1
−20
0
60
80
540
560
580
600
620
640
660
20
40
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation pattern
I – Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
6
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
TLYE53T(F)
I
– V
I
V
– I
F
F
F
100
10000
1000
100
Ta = 25°C
Ta = 25°C
50
30
10
5
3
1
1.6
10
1
1.7
1.8
1.9
2.0
2.1
2.2
2.3
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
V
– Tc
Relative luminous intensity – Wavelength
3
1
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
0.5
0.3
0.1
−20
0
60
80
540
560
580
600
620
640
660
20
40
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation pattern
I – Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
7
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
TLPYE53T(F)
I
– V
I
V
– I
F
F
F
100
3000
1000
Ta = 25°C
Ta = 25°C
50
30
10
100
5
3
10
5
1
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
1
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
V
– Tc
Relative luminous intensity – Wavelength
10
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
5
3
1
0.5
0.3
0.1
−20
0
20
40
60
80
540
560
580
600
620
640
660
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation pattern
I – Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
8
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
TLGE53T(F)
I
– V
I
V
– I
F
F
F
100
5000
1000
Ta = 25°C
Ta = 25°C
50
30
10
100
5
3
1
1.6
10
1
1.7
1.8
1.9
2.0
2.1
2.2
2.3
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
V
– Tc
Relative luminous intensity – Wavelength
10
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
5
3
1
0.5
0.3
0.1
−20
0
60
80
520
540
560
580
600
620
640
20
40
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation pattern
I – Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
9
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
TLFGE53T(F)
I
– V
I
V
– I
F
F
F
100
1000
Ta = 25°C
Ta = 25°C
50
30
100
10
5
3
10
3
1
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
1
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
V
– Tc
Relative luminous intensity – Wavelength
10
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
5
3
1
0.5
0.3
0.1
−20
0
20
40
60
80
520
540
560
580
600
620
640
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation pattern
I – Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
10
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
TLPGE53T(F)
I
– V
I
V
– I
F
F
F
100
1000
100
10
Ta = 25°C
Ta = 25°C
50
30
10
5
3
1
1.6
1
1
1.7
1.8
1.9
2.0
2.1
2.2
2.3
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
V
– Tc
Relative luminous intensity – Wavelength
10
1.0
0.8
0.6
0.4
0.2
0
I
= 20 mA
F
Ta = 25°C
5
3
1
0.5
0.3
0.1
−20
0
60
80
20
40
520
540
560
580
600
620
640
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation pattern
I – Ta
F
80
60
40
20
0
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0.2 0.4 0.6 0.8 1.0
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
11
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
12
2007-10-01
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