TNM1800-7 [TOSHIBA]
TRANSISTOR RF POWER, FET, 2-9D2A, 3 PIN, FET RF Power;
| 型号： | TNM1800-7 |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR RF POWER, FET, 2-9D2A, 3 PIN, FET RF Power 局域网 CD 晶体管 |
| 文件： | 总3页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TOSHIBA
MICROWAVE POWER GaAs FET
TNM1800-7
High Power GaAs FETs (L, S-Band)
Features
• High power
- P
= 39.5 dBm at 1.8 GHz
1dB
• High gain
- G = 10.0 dB at 1.8 GHz
1dB
• Hermetically sealed package
RF Performance Specifications (T = 25° C)
a
Characteristics
Output Power at 1dB
Symbol
Condition
Unit
Min.
Typ.
Max
P
dBm
38.5
39.5
–
–
1dB
Compression Point
Power Gain at 1dB
Compression Point
V
= 10V
DS
G
dB
9.0
10.0
1dB
f = 1.8 GHz
Drain Current
I
A
%
°C
–
–
–
2.0
40
–
2.5
–
DS
Power Added Efficiency
Channel-Temperature Rise
N
add
∆T
NOTE 1
80
ch
Electrical Characteristics (T = 25° C)
a
Characteristic
Trans-conductance
Symbol
Condition
Unit
Min.
Typ.
Max
V
=3V
DS
gm
mS
–
1600
–
I
=1.8A
DS
V
=3V
=35mA
DS
Pinch-off Voltage
V
I
V
-1.0
-3.0
-4.0
GSoff
DSS
I
DS
V
V
=3V
=0V
DS
GS
Saturated Drain Current
A
V
–
-5
–
5.0
–
6.5
–
Gate to Source Breakdown Voltage
Thermal Resistance
V
I
=-105 µA
GSO
GS
Channel
to case
R
°C/W
3.8
4.8
th (c-c)
NOTE 1:∆Tch = (V x I + Pin - P ) x R
DS
DS
1dB
th(c-c)
The information contained here is subject to change without notice.
The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic
equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip-
ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types
of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.
TOSHIBA CORPORATION
MW30010196
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TNM1800-7
Absolute Maximum Ratings (T = 25° C)
a
Characteristic
Drain Source Voltage
Symbol
Unit
Rating
V
V
V
15
-5
DS
Gate Source Voltage
Drain Current
V
GS
I
A
5.0
D
Total Power Dissipation (Tc = 25°C)
Channel Temperature
Storage Temperature
P
W
˚C
˚C
30
T
T
175
ch
stg
T
-65~175
Package Outline (2-9D2A)
Handling Precautions for Packaged Type
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.
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MW30010196
TOSHIBA CORPORATION
TNM1800-7
Power Dissipation vs. Case Temperature
RF Performances
TOSHIBA CORPORATION
MW30010196
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